高温超导体和巨磁阻薄膜激光感生热电电压的最佳膜厚研究

根据高温超导体(HTSC)和巨磁阻（CMR）薄膜中激光感生电压信号的时间关系公式，进一步导出产生最大激光感生电压所需的薄膜最佳厚度的方程式.结果表明，感生电压不是简单地与厚度的倒数成正比，而是存在一个最佳厚度 .该方程给出了影响器件响应设计的主要因素，讨论了决定最佳厚度的薄膜参数，并与实验结果进行比较. 关键词： 激光感生电压 最佳厚度 HTSC CMR 探测器     

YBCO半导体薄膜及Bolometer特性

就Si为衬底的钇钡铜氧(分子式：Y₁Ba₂Cu₃O_7-δ ,δ≥05,简称YBCO)薄膜的半导体性质,及用于红外测辐射热计(Bolometer)的探 测性能进行了研究.通过测定温度电阻系数(TCR)和霍尔(Hall)系数,并采用XRD、拉曼散射 光谱等手段分析了YBCO半导体薄膜的微观结构和光谱响应特性,认为该薄膜是非制冷红外焦 平面的新型探测元材料. 关键词： YBCO半导体薄膜 测辐射热计 温度电阻系数     

对靶溅射技术制备的La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜中Tc的降低

本文用对靶溅射技术制备了La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜.与YBCO单层薄膜相比,由于超导/铁磁系统中的磁性邻近效应,三层薄膜表现出较低的超导转变温度.薄膜的R～T测量曲线显示出超磁阻(CMR)效应和超导转变,预示着超导和铁磁特性共存于LCMO/YBCO/LCMO三文治结构.     

LaAlO3/SrTiO3异质界面磁场调控的反常金属态

自LaAlO₃/SrTiO₃异质界面发现高迁移率的二维电子气以来,其二维超导电性、界面磁性和自旋轨道耦合等诸多物理性质已经被广泛研究.对于二维超导体,零温下超导-反常金属相变的起源仍然是一个悬而未决的问题.传统理论认为在超导-绝缘量子相变中只存在2种基态,即库珀对的超导基态和绝缘基态.然而在研究超导颗粒膜中超导电性的演化与厚度和温度的关系时发现,存在一个中间金属态破坏了超导体和绝缘体之间的直接过渡.这种中间金属态的标志性特征是,在超导转变温度之下存在饱和的剩余电阻,与之对应的基态称作反常金属态.本文主要对在LaAlO₃/SrTiO₃(001)异质界面磁场诱导的超导-反常金属量子相变进行了系统的研究.在没有外加磁场的情况下,电阻-温度(R-T)曲线和电流-电压(I-V)特性曲线表明样品在超导转变温度之下处于超导态.外加磁场会导致样品在低温下出现饱和电阻、正的巨磁阻和低电流范围内的线性I-V曲线.另外,霍尔电阻在一定的磁场之下会出现零电阻平台,而此时纵向电阻不为零,表现出明显的玻色金属态的特征.研究结果...     

TbDyFe薄膜对三明治膜巨磁阻抗效应的影响

将600℃退火后的超磁致伸缩材料(Tb0.27Dy_0.73)_0.3Fe_0.7薄膜作为Ni_80.2Fe_14.1Si_0.2Mn_0.4Mo_5.1三明治膜的基底，制备出四层膜.结果表明：附加的磁致伸缩并没有减小材料的巨磁阻抗(GMI)效应，而由于磁场下磁致伸缩材料的应力效应影响了三明治膜中的各向异性场，使三明治膜的GMI效应增大了4倍.再将制备态的四层膜在280℃下真空退火，退火态四层膜也增大了三明治膜的GMI效应，但可能由于磁致伸缩向磁性层中的扩散，其GMI效应相对于制备态四层膜则有所降低. 关键词： 巨磁阻抗(GMI)效应 三明治膜 TbDyFe薄膜 各向异性场     

基于VO2薄膜非致冷红外探测器光电响应研究

VO₂薄膜是非致冷微测辐射热红外探测器热敏电阻材料.研究中应用微电子工艺制备了VO₂溅射薄膜红外探测器,在296K的环境中测试了该探测器在不同的直流偏置、光调制频率下对873K标准黑体源8—12μm红外辐射的光电响应以及器件的噪声电压,在10和30Hz的调制频率下其响应率分别大于17kV/W和接近10kV/W.该探测器实现了探测率D大于1.0×10⁸cm (Hz)^1/2/W,热时间常量为0.011s的8—12μm非致冷 关键词： 非致冷测辐射热探测器 红外探测器 二氧化钒 薄膜     

硅基VO2纳米薄膜光致绝缘体—金属相变的THz时域频谱研究

利用THz时域频谱技术(THz-TDS)研究了硅基二氧化钒(VO₂)纳米薄膜的光致绝缘体—金属相变特性.在连续光激发下前后,观察到了非常明显的THz透过率变化,并通过薄膜近似计算出了THz波段金属态VO₂薄膜的电导率.根据实验结果建立了金属态VO₂薄膜的等效Drude模型,得到了复电导率,复电容率以及复折射率等相关的基本参数,并通过基于时域有限积分法模拟了THz波穿透硅基金属态VO₂薄膜的过程,验证了所建立的模型的正确 关键词： 二氧化钒 光致相变 Drude模型 THz时域频谱技术     

双层锰氧化物薄膜的制备及其物理性质

用脉冲激光沉积(PLD)方法成功地制备了双层钙钛矿结构的La2-2xSr1+2xMn2O7(x=032)单相薄膜.这种薄膜生长在具有不同晶格参数的两种衬底上.测量发现，两种衬底上生长的La2-2xSr1+2xMn2O7(x=032)薄膜具有迥然不同的金属-绝缘体转变温度TM-I及其他物性.界面应力的研究表明这是衬底晶格常数不同引起膜内应变的结果.在衬底的压应力下，薄膜的电阻-温度曲线的峰值(TM-I)向高温移动且电阻率(ρ)下降；相反，对于衬底张应力下的薄膜，TM-I下降ρ上升.这些结果可以用双交换模型做很好的解释. 关键词： CMR 双层锰氧化物薄膜 PLD 应力     

用于TES测辐射热计的Al/Ti双层薄膜制备及其超导特性研究

本文报道了用于超导TES(Transition Edge Sensor)测辐射热计的Al/Ti双层薄膜制备及其超导特性研究.通过分析Al薄膜表面粗糙度和室温电阻率在不同溅射功率和氩气压力下的变化关系,优化了Al薄膜的制备工艺.使用磁控溅射技术生长了一系列不同厚度的Al/Ti双层薄膜,在氦三制冷机中测量了双层膜的超导特性.测试结果表明,Al/Ti双层薄膜具有良好的超导相变特性,在10μA测试电流下,其相变宽度保持在3mK~6mK范围内,在超导临界温度下电阻对温度的灵敏度参量α在300左右;由于超导邻近效应(Proximity effect),双层薄膜的临界温度可以通过控制Ti薄膜的厚度实现在470mK~800mK温区内的调节.Al/Ti双层薄膜的这些性能满足了制备超导TES测辐射热计的需要.     

Sr2CoO4-δ薄膜中的自旋玻璃态的磁性质研究

用脉冲激光沉积方法(PLD)在铝酸镧衬底上制备了c取向的高氧空位含量的锶钴氧薄膜.X射线衍射分析表明薄膜单一取向且没有明显杂相.原位的高气压反射式高能电子衍射仪(RHEED)监测显示,薄膜为层状生长.通过对薄膜磁化强度随温度、磁场及时间的变化曲线进行测量,发现零场冷曲线上可能存在两个特征温度:T_f和T_a.T_f为对应玻璃态的冻结温度而T_a对应少量的不缺 关键词： 自旋玻璃 超交换相互作用 双交换相互作用 脉冲激光沉积     

A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film

We have developed a high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic (SCE) thin film. SCE thin films, typically represented by high-temperature superconductor (HTS) cuprate and colossal magnetoresistance (CMR) manganite thin films, demonstrate tremendous anisotropic Seebeck effect. In this study, a La_2/3Ca_1/3MnO₃ thin film grown on a tilted LaAlO₃ substrate is tested with the fundamental, the second, the third, and the fourth harmonics (1064, 532, 355, 266 nm, respectively) of a Q-switched Nd:YAG laser over a wide range of temperatures from room temperature to 16 K. The peak-value of the laser-induced thermoelectric voltage signal shows a good linear relationship with the laser energy per pulse in the measured wavelength and temperature ranges. The combined advantages over other commercial laser detectors such as nanosecond-order response and spectrally broad and flat response over a wide range of temperatures, in situ real-time measurement, and energy savings, make the device an ideal candidate for next-generation laser detectors and laser power/energy meters.     

A novel time-integral type laser energy meter based on anisotropic Seebeck effect

We have posed the design of a time-integral type laser energy meter based on anisotropic Seebeck effect for the first time. Anisotropic Seebeck effect is responsible for the laser-induced thermoelectric voltage effect in high temperature superconductor (HTSC) cuprates and colossal magnetoresistance (CMR) manganites thin films grown on tilted single crystal substrates. In this study, for an example, an epitaxial La_2/3Ca_1/3MnO₃ thin film prepared on a tilted LaAlO₃ substrate by standard pulsed-laser deposition (PLD) method is tested with a 1064-nm Q-switched Nd:YAG laser and its 2nd (532 nm), 3rd (355 nm), and 4th (266 nm) harmonics from room temperature to 16 K. The integral of the voltage signal with time shows a good linear relation with the laser energy per pulse in the measured wavelength and temperature range, which confirms the theoretical analysis given in this letter and can be used to design a time-integral type laser energy meter. The sensitivity increases as the film thickness increases or as the thermal diffusion constant decreases, which makes the time-integral type laser energy meter low cost as compared with the peak-voltage type. It operates with fast (nanosecond range) and broad-spectrum (from infrared to ultraviolet) response in wide temperature range (from room temperature to 10s K), and can be useful replacements for pyroelectric power/energy meters.     

Direct injection of spin-polarized carriers across YBa2Cu3O7-δ-La0.3Ca0.7MnO3 interface at 77 K

We report here injection of spin-polarized carriers from a half-metallic La_0.3Ca_0.7MnO₃ (LCMO) colossal magnetoresistive (CMR) thin film into a high-temperature superconducting YBa₂Cu₃O_7-δ (YBCO) thin film studied using a micro-bridge. The LCMO and YBCO films were grown on 〈100〉 LaAlO₃ (LAO) substrate sequentially using pulsed laser deposition (PLD). I-V measurements carried out at 77 K show that while normal critical current, I _c ⁿ , of the micro-bridge is 80 mA, the critical current, I _c ^p , through the micro-bridge when injected from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.     

Ferromagnetism in carbon-doped In2O3 thin films

Carbon-doped In₂O₃ thin films exhibiting ferromagnetism at room temperature were prepared on Si (100) substrates by the rf-magnetron co-sputtering technique. The effects of carbon concentration as well as oxygen atmosphere on the ferromagnetic property of the thin films were investigated. The saturated magnetizations of thin films varied from 1.23 to 4.86 emu/cm³ with different carbon concentrations. The ferromagnetic signal was found stronger in samples with higher oxygen vacancy concentrations. In addition, deposition temperature and different types of substrates also affect the ferromagnetic properties of carbon-doped In₂O₃ thin films. This may be related to the oxygen vacancies in the thin film system. The experiment suggests that oxygen vacancies play an important role in introducing ferromagnetism in thin films.     

Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications

In this paper, boron-doped nanocrystalline Si_0.78Ge_0.22:H thin film is assessed for use as resistive sensing layer in uncooled infrared bolometer applications. The silicon germanium thin films were deposited by PECVD (plasma enhanced chemical vapor deposition) through decomposition of silane, germane and diborane diluted with argon at substrate temperature of 230 °C. Under optimum deposition parameters, the sensing films with modulate electrical resistivity (<10⁴ Ω cm) and high temperature coefficient of resistance (TCR) (>−3%/K) were obtained at room temperature. 1/f noise character in the form of the normalized Hooge parameter was measured in the frequency range of 1–64 Hz, resulting in a lower 1/f noise compared to other materials currently used for device application.     

The linear electro-optic effect in CdS0.75Se0.25

The electro-optic coefficient of CdS_0.75 Se_0.25 is measured at the frequency of the He-Ne laser light and the application of this crystal in light modulators is discussed. The figure of merit is found to be |³_or_c| = 7 × 10^-9 cm/V at room temperature. The voltage required to achieve one half wave retardation is 9 kV.     

Observation of the quasidiffusive propagation of phonons in Mg<Subscript>2</Subscript>SiO<Subscript>4</Subscript>:Ho<Superscript>3+</Superscript> using time-resolved photo-phonon spectroscopy

The energy flux of phonons produced due to the nonradiative laser-induced transitions of Ho³⁺ impurity ions in forsterite from the ⁵F₅ states has been measured using a superconductor bolometer at a temperature of 2 K. The dependence of the flux on the laser wavelength, the time elapsed after the action of a laser pulse, and the phonon propagation path length is analyzed. It is found that the excitation of Ho³⁺ to some states leads to the diffusive propagation of emitted phonons in the spontaneous frequency decay mode (quasidiffusive mode of propagation): the time of arrival of a phonon pulse is almost a linear function of the path length, but it is several times longer than the longest ballistic time of flight (for transverse phonons). The diffusion coefficient and the nonradiative relaxation time are determined from the best fit to the experiment.     

A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect

Strongly correlated electronic (SCE) materials including high-temperature superconducting cuprate and colossal magnetoresistance manganite thin films demonstrate tremendous anisotropic Seebeck effect which makes them very promising for developing high-performance laser detectors. In this work, laser-induced thermoelectric voltage (LITV) signals with nanosecond response time have been measured in SCE La_1?x Pb _x MnO₃ thin films based on anisotropic Seebeck effect at room temperature. The magnitude of the LITV signals increases linearly with laser energy/power density in a wide range of laser wavelengths from ultraviolet, visible to infrared based on which a novel SCE thin-film laser energy/power meter has been developed.     

Experimental study of a normal-metal hot electron bolometer with capacitive coupling

Normal-metal hot-electron bolometer with capacitive coupling (CCNHEB) is a further development of the concept of a normal-metal hot-electron bolometer with Andreev mirrors (ANHEB). It was proposed to eliminate the frequency and energy restrictions inherent in ANHEB, in which Andreev mirrors act efficiently only with relatively long absorbers and at energies below the superconducting gap. An important advantage of the CCNHEB is its simple topology, in which the same tunnel junctions provide thermal decoupling, noise protection, temperature measurement, and it can be used for electron cooling. The temperature response of the bolometer was measured at temperatures down to 260 mK. The observed response dV/dT=1.7mV/K corresponds to the sensitivity S=0.4×10⁹V/W. The measured noise at the amplifier output with this sample was found to be V _na =4nV/Hz^1/2, which corresponds to a noise-equivalent power of 10^?17W/Hz^1/2. To measure optical response, black-body radiation was used as a source of signal inside the cryostat. The source was a thin NiCr film sputtered on a thin sapphire substrate and suspended by nylon threads. Optical measurements proved to be in good agreement with the dc measurements.