锂离子电池Sn-Ti合金负极材料的制备及性能研究

采用磁控溅射沉积技术制备了纳米级Sn-Ti合金负极材料,并用X射线衍射和扫描电子显微镜进行表征,用高精度电池测试系统进行充放电和循环伏安测试.结果表明先镀Sn后镀Ti（Sn/Ti复合膜）和先镀Ti后镀Sn（Ti/Sn复合膜）具有很大的性能差异,其中Sn/Ti复合膜具有优异的循环稳定性和较高的可逆容量.首次放电容量和充电容量分别为9275 mAh/g和6954 mAh/g,首次库仑效率为75％,经30次循环后,该电极的放电容量保持为4152 mAh/g,这主要归因于活性物质Sn与电解液界面之间存在非活 关键词： 锂离子电池 磁控溅射 Sn-Ti合金 电化学性能     

没食子酸还原法制备金银合金纳米粒子及其吸收光谱研究

用没食子酸一步液相还原制备粒度均匀和性质稳定的Au-Ag合金纳米粒子,研究在不同反应温度和Au／Ag摩尔比下Au-Ag合金纳米粒子的吸收光谱特性。实验结果表明Au-Ag合金纳米粒子仅有1个吸收峰,介于纯Ag和纯Au纳米粒子的吸收峰之间,且随着反应温度的提高,合金纳米粒子的最大吸收峰位逐渐蓝移,吸光度增加,半峰宽变窄。随着Au/Ag摩尔比的增加,合金纳米粒子的最大吸收峰位红移,且与其所含Au摩尔百分数呈线性关系。HRTEM表征结果说明制备的Au/Ag合金纳米粒子近球形、粒度均匀、无包覆现象。EDX分析结果证实单个纳米粒子由Au和Ag组成,其元素组成比与参加反应的Au/Ag摩尔比接近。     

二元合金表面偏析的Monte Carlo方法模拟

详细介绍了二元合金表面偏析的Monte Carlo模拟方法,并应用改进的分析型嵌入原子模型结合Monte Carlo方法模拟研究了Pd-Au合金表面成分及其剖面成分分布,发现Au在表面偏析,并同已有实验结果进行了比较.     

空心微球结构Au/Ag合金泡沫块体的制备

将平均晶粒尺寸为4.6 nm的金粒子通过静电作用粘附于聚苯乙烯（PS）微球表面用于化学镀,化学镀金后PS表面的金沉积层几乎达到完全包覆,厚度70~90 nm;在Au/PS表面进行化学镀银,沉积的银颗粒堆积紧密,颗粒大小较先前沉积的金颗粒大,镀覆层厚度增厚至200~400 nm;模板去除后,获得了完全自支撑的Au40Ag60空心微球结构的圆柱状泡沫材料。制备的金银合金泡沫由直径约10 m的空心球壳组成,圆柱体直径约5 mm,密度约1.2 g/cm3。     

太阳盲MgZnO光电探测器

利用射频磁控溅射技术在石英衬底上制备了MgZnO合金薄膜,并采用传统湿法刻蚀的方法在薄膜上制备了梳妆叉指Au电极,构成金属-半导体-金属(MSM)结构.在室温下,实现了太阳盲MgZnO光电探测器,器件的探测峰值位于225nm,截止边为230nm.     

基于遗传算法的Au-Cu-Pt三元合金纳米粒子的稳定结构研究

合金纳米粒子展示出单金属粒子所不具有的多功能性能, 而其稳定结构的研究对于进一步了解其催化性能具有重要的意义. 本文采用改进的遗传算法和量子修正Sutton-Chen型多体势对二十四面体Au-Cu-Pt三元合金纳米粒子的稳态结构进行了系统的研究. 针对不同尺寸、不同组成比例的合金纳米粒子, 探讨了遗传算法的收敛性及初始构型对稳态结构的影响. 计算的结果表明: 初始结构的选取并不影响最终的稳定结构, 并且改进的遗传算法具有较好的稳定性; Au和Cu形成表面偏聚, 而Pt则倾向于分布在内层; 当Au或Cu比例较小时, Au和Cu表现出表面最大偏聚; 当Au与Cu原子数之和大于表面原子数时, 二者表现出竞争偏聚, 且Cu的偏聚效应较强; 随着Au, Cu原子数继续增长至大于表面和次表面原子数之和时, Au的偏聚性能增强. 此外, Cu在占据表面后, 会越过次外层, 与Pt在内层形成混合相结构.     

等离子体喷涂Sn和ZrO2涂层／U-Nb合金摩擦副的摩擦性能

探讨用等离子体喷涂方法制备降低较高强度材料与U-Nb合金之间的摩擦性能的减磨层的可行性以及这些减磨层的摩擦特性。选用Sn为软涂层，ZrO2为硬涂层。采用Sulzer METCO9M等离子体喷涂机制备了Sn单层、ZrO2单层、Sn／ZrO2双层、Sn ZrO2混合层等4种涂层。利用CSEM型销盘型摩擦磨损试验机分析了半径为3mm的U-Nb合金对偶销在涂层上滑动时的干摩擦特性，滑动速度分别为0．42，6．4，26．16cm／s。涂层为典型的等离子体喷涂涂层形貌。表面为Sn的涂层颗粒熔合状况和致密性比ZrO2单层好，其粗糙度低，Sn ZrO2混合涂层表面形貌与ZrO2单层相近。Sn和ZrO2分别以bcc结构的Sn和四方结构ZrO2结构存在。     

自支撑纳米多孔金薄膜制备研究

采用磁控溅射镀金银膜,长时间热处理合金化制备前驱体合金,以渐进浓度的硝酸自由腐蚀去合金化成功制备出具有自支撑结构的纳米多孔金薄膜。采用扫描电镜和X射线能谱仪对去合金腐蚀前后样品的形貌和成分进行了分析,结果表明:400℃,36h的热处理使得薄膜样品完全合金化,获得了结晶致密的Au42Ag58合金膜;渐进浓度的自由腐蚀避免了薄膜的完全开裂,获得了样品尺寸大于15mm×15mm、厚度400~500nm、孔隙率约56%、具有自支撑结构的纳米多孔金薄膜,其微观结构为连续的三维多孔结构,系带尺寸40~140nm,80~100nm的系带达58%。     

Rh（100）表面Mn的生长与结构：AES,UPS和LEED研究

在超高真空（ＵＨＶ）条件下，向Ｒｈ（１００）表面积蒸积Ｍｎ，利用ＡＥＳ，ＵＰＳ和ＬＥＥＤ等表面分析技术，研究了该Ｒｈ（１００）表面的两种生长模式，制备了一种未见报道的表面合金Ｒｈ（１００）ｃ（２×２）－Ｍｎ。     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

金锡共晶互连对HP-LED光热性能的改善

随着功率型LED(HP-LED)对散热的要求越来越高,传统导电银胶越来越难以满足LED的高散热要求。虽然共晶互连工艺是微电子领域中的一种有效的散热互连方法,但是由于LED的特殊性,该工艺在LED互连封装中的性能改善研究还比较少。本文对金锡共晶互连、锡膏互连和银胶互连的3种LED器件分别进行了光学、热学以及剪切力等方面的测试分析研究,结果表明:底部与顶部同时加热的金锡共晶工艺互连的LED器件可以有效地改善仅底部加热共晶互连层中的空洞缺陷,在1 000 mA电流条件下,相对于锡膏、银胶互连的LED器件具有较低的热阻、较稳定的峰值波长偏移、较强的互连层剪切力等性能。金锡共晶互连工艺是一种可以有效改善大功率LED散热及互连强度的方法。     

Correlation study of structural,electrical and mechanical properties of quenched tin–zinc–cadmium solder alloys

It is important, for electronic application, to decrease the melting point of SnZn₉ solder alloy because it is too high as compared with the most popular eutectic Pb–Sn solder alloy. Adding Cd causes structural changes such as phase transformations, dissolution of atoms and formation of Cd crystals in the quenched SnZn₉ alloy, and its physical properties are affected by this change. For example, the melting point is decreased towards the melting point of the Pb–Sn eutectic alloy, or even much less. The structure, electrical and mechanical properties of quenched Sn_{91? x} Zn₉Cd _x (x?=?0 or x?≥?5) alloys have been investigated. Adding Cd to a quenched SnZn₉ alloy increases its electrical resistivity and decreases its elastic modulus and internal friction. The Sn₇₁Zn₉Cd₂₀ alloy has the lowest melting point (162 °C) and electrical and internal frictions as compared with commercial Pb–Sn solder alloys.     

Effect of lead on microstructure and some physical properties of Sn–Zn–Cd alloy

The effect of lead on the structure, electrical resistivity, internal friction, elastic modulus and thermal properties of Sn₈₁Zn₉Cd₁₀ ternary alloys have been investigated using different experimental techniques with their analysis. In addition, properties of this alloy were compared with other Sn–Zn or Sn–Zn–Cd alloys and commercial solder alloys. It has a higher electrical resistivity, internal friction and lower elastic modulus when compared with Sn–Zn or Sn–Zn alloys with other additions such as Cd, Bi or In. The Sn₆₁Zn₉Cd₁₀Pb₂₀ alloy has a lower melting point, electrical resistivity and internal friction when compared with the commercial Pb–Sn solder alloy, but it has a similar elastic modulus.     

Effects of soft beam energy on the microstructure of Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu solder joints in lensed-SM-fiber to laser-diode-affixing application

This paper reports on the effectiveness of soft beam energy as a heat source to form an optimum solder joint to fix a lensed fiber permanently on a Ni/Au-plated substrate. Solders, i.e., Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu (SAC) [wt%] were evaluated for this fluxless application. The microstructures of the solder joints have been examined using scanning electron microscopy (SEM), in order to understand the response of these solder materials to the focussed white light. Obviously, the exposure time has a greater effect on the soldering temperature before reaching the peak temperature, which is determined by the power. A power setting of 40 W can reach approximately 340 °C, 30 W can reach about 310 °C while 25 W can easily reach 260 °C. In general, a higher soldering temperature than the melting temperature is required to form good wetting solder joints for fluxless applications. However, too high an input thermal energy may result in premature aging for the cases of Pb37Sn and SAC, and lateral cracks for the case of Au20Sn. The thermal cracks and voids observed in Au20Sn solder joint were attributed to the fact that the soft beam heating profile does not suit the AuSn preform. Out of these three solder types, SAC demonstrated just the right response to the soft beam, i.e., good wetting, fine and homogeneous structure, and no cracks or other visible failures.     

New lead-free solder alloy

As the electronics industry is moving towards lead-free manufacturing processes, a new lead-free solder alloy based on Sn–9Zn–1Bi–2Cu–In is described. The quaternary alloy with indium additions exhibits melting, wetting, and mechanical properties superior to those in binary, ternary, and quaternary alloys. Indium as a penternary addition decreases the melting point of this alloy to 181 ^°C which it is a lower value when compared with the eutectic Sn–Pb solder (183 ^°C), it decreases the contact angle to 23^° which is very close to that for Sn–Pb solder alloy, it increases the Young’s modulus to higher values, and it increases its hardness to 19 kgf/mm² when compared with 12.9 kgf/mm² for the Sn–Pb solder alloy.     

Quantitative auger electron analysis of homogeneous binary alloys: Chromium in gold

Quantitative Auger electron analysis of Cr/Au alloys with up to 20% Cr has been accomplished. The surface composition of scribed areas were compared to bulk compositions and it was shown that corrections for variation of density, escape depth, and electron backscattering must be included; these corrections change the measured surface Cr concentrations by approximately 15%. Alloy sputter yield ratios have been calculated from surface concentrations after sputtering with Ar or Ne (0.5, 1.0, 1.5, and 2.0 keV). The sputter yield ratio of Cr to Au was 0.5 at 1% Cr (significant preferred sputtering) but was near unity at 20% Cr (no preferred sputtering). The sputter yield ratio was nearly independent of ion species and ion energy. The 2 keV argon ion sputter yields for pure Cr and Au were determined to be 2.0 and 7.9 atoms/ion, respectively. However, the 2 keV argon ion sputter yield for Au in the alloys drops rapidly from 7.9 atoms/ion for pure Au, to 5 atoms/ion at 10–20% Cr. The sputter yield for Cr in alloys (5 atoms/ion) is relatively independent of composition and is 2.5 times higher than the yield of pure Cr. No simple model is known by which pure elements sputter yields could be used to predict alloy sputtering behavior.     

Electrodeposition of Pb-free Sn alloys in pulsed current

A pulsed electrodeposition method is applied to the preparation of Pb-free Sn alloys solder bumps for flip-chip bonding with the aid of a photolithography. Sn-Ag alloy films with near eutectic compositions (Sn-3.5% Ag) were obtained using a pyrophosphate-iodide plating baths regardless under direct or pulsed current. The composition and the morphology of electrodeposits were examinated by SEM and X-ray photoelectron spectroscopy (XPS). The main results revealed that the organic additives affect the electrochemical reduction of tin-silver and the direct consequence on making Sn-Ag alloy is a decreased deposition rate. However, the addition of additives in the plating bath suppressed the dendritic tin-silver growth by adsorption on the deposited surface. Pulsed electrodeposition is shown to be an interesting approach to elaborate bumps with smooth and homogeneous surfaces.     

Backscattering correction for quantitative Auger analysis: II. Verifications of the backscattering factors through quantification by AES

The validity and utility of the backscattering correction factors obtained from Monte Carlo calculations for quantitative analysis by Auger electron spectroscopy (AES) were examined through practical quantification of surface concentrations of binary alloys. Quantifications were attempted, first, to access the surface composition of a sputter-deposited NiPt layer, which is probably the most appropriate test-sample with known surface composition for surface analysis. The quantification by AES has led to the result that the surface composition of the layer agrees well with the bulk composition of the sputtered NiPt alloy, as expected. The composition of a sputtered AuCu alloy surface was, then, examined according to the same correction procedure as for the NiPt layer, leading to the confirmation that no preferential sputtering is observed for AuCu alloys by AES as Färber et al. reported.     

紫外成像器件光电阴极封接焊料熔层缺陷对气密性的影响

为解决紫外成像器件光电阴极与管体封接漏气问题,对管体InSn合金熔化过程中出现的质量问题进行了深入分析,找出焊料熔层缺陷主要来源于对焊料除气不彻底和基底表面氧化及设备油污染。通过优化工艺参数,改进工艺质量和把化铟设备管体搁置焊料熔化改为浇铸熔化,使管体焊料熔化合格率达到了100%,光电阴极与管体封接气密性成品率达到98%。     

The surface composition of the gold-palladium binary alloy system

The surface composition of the AuPd alloy system has been determined by Auger electron spectroscopy. Measurements were performed on polished polycrystalline alloy foils. After cleaning, the intensities of the 71 eV and 2024 eV gold Auger transitions, and the intensity of the 330 eV palladium transition were measured, and then converted to atom concentrations in the surface layer. The surfaces of the annealed samples were found to be significantly enriched in gold with respect to the bulk. This result disagrees with the regular solution theory prediction. After extensive sputtering of the AuPd alloys with 1.5 keV Ar⁺ ions, a slight surface enrichment with palladium was found, as predicted by the simple theoretical model for sputtering.