共查询到20条相似文献,搜索用时 218 毫秒
1.
2.
3.
4.
5.
6.
7.
垂直腔面发射半导体微腔激光器 总被引:19,自引:0,他引:19
评述了垂直腔面发射半导体激光器研究的最新进展,就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述,探讨了进一步降低半导体激光器阈值的途径,介绍了新型的氧化约束型垂直腔面发射半导体激光器,并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述,同时展望了该器件的应用及发展前景。 相似文献
8.
9.
10.
对40K-87Rb原子冷却的半导体激光系统提出了一种实验方案,并进行了初步实验.采用三台外腔光栅反馈半导体激光器(ECDL)、四台注入锁定从激光器和一台半导体激光放大器组成激光系统.三台ECDL通过声光调制器产生四束光,分别作为40K和87Rb原子的冷却光和再抽运光,四束不同频率成分的激光分别注入锁定四台从激光器,然后Rb 冷却光、K冷却光和K再抽运光再同时注入半导体激光放大器进行放大.该装置可同时产生冷却40K和87Rb原子的冷却光和再抽运光,结构紧凑、工作稳定.
关键词:
简并费米气体
激光器系统
外腔光栅反馈半导体激光器
半导体激光放大器 相似文献
11.
12.
分析了单量子阱(SQW)、多量子阱(MQW)和分别限制异质结构量子阱(SCH-SQW)半导体激光器的阈值.求出了表示光增益随注入载流子密度变化的方程.利用这个结果,得到了上述三种量子阱半导体激光器的阈值电流密度的表达式. 相似文献
13.
半导体带间级联量子阱是实现3~5μm波段中红外激光器的重要前沿,其在半导体光电器件技术、气体检测、医学医疗以及自由空间光通信等诸多领域具有重要科学意义和应用价值。半导体带间级联量子阱发光机理是以二类量子阱中的电子与空穴的带间辐射复合发光为主导,再通过电子注入区与空穴注入区形成级联放大,实现多个量子阱周期内电子与空穴的重复利用。本文综述了半导体带间级联激光器从提出能带结构、外延材料到器件制备技术的发展历程,剖析了器件结构各功能区基本概念和工作原理,介绍了器件结构设计与制备工艺技术难点的里程碑突破,详细解释了载流子再平衡、分别限制层等设计,最后展望了半导体带间级联激光器的发展方向和趋势。 相似文献
14.
The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 × 104 is fabricated with photolithographic techniques. Reactive ion beam etching (RIBE) is used to get the silica disks with photoresist masks on SiO2/Si made by standard ultraviolet (UV) photolithography,and spontaneous silicon etching by XeF2 is used to fabricate the silicon micropillars. This fabrication process can control the microcavity geometry, leading to high experiment repeatability and controllable cavity modes. These characteristics are important for many applications in which the microcavity is necessary, such as the quantum gate. 相似文献
15.
半导体量子器件物理讲座 第六讲 半导体量子阱激光器 总被引:1,自引:0,他引:1
量子阱结构是半导体光电子器件的核心组成部分,它是半导体光电子集成的重要基础,文章在描述了量子结构的态密度,量子尺寸效应,粒子数反转的基础上,介绍了量子阱导质结构激光器的工作原理,器件结构,器件性能,并对其在可见光激光器和大功率激光器件中显现出来的优越性作了进一步的说明。 相似文献
16.
量子线,量子点和它们的激光器 总被引:2,自引:0,他引:2
介绍了半导体量子线、量子点的自组织生长法和掩膜表面选择局部生长法,讨论了量子线、量子点激光器的优点以及遇到的问题,指出了大小均匀性是实现量子线、量子点激光器的主要障碍. 相似文献
17.
具有高功率及高亮度激光特性的锥形半导体激光器在激光加工、自由空间通信、医疗等领域具有广泛的应用前景。本文基于广角差分光束传播法(WA-FD-BPM),对980 nm锥形半导体激光器进行了仿真模拟,详细分析了不同结构参数(脊形区刻蚀深度、锥形角度、不同脊形区/锥形区长度比、锥形区刻蚀深度、前腔面反射率)对器件光束质量和P-I-V特性的影响。分析认为,锥形区波导的几何损耗是导致器件斜率效率降低的主要因素,光泵浦效应是影响锥形激光器光束质量变差的重要因素,可通过降低器件的前腔面反射率来改善光束质量。研究结果可为锥形激光器的性能优化提供参考。 相似文献
18.
L.J. Van Ruyven 《Journal of luminescence》1984,29(2):123-161
The improved technology of compound semiconductor heterojunction preparation has resulted in very reliable CW, room temperature diode lasers for optical information read-out grown on p-type substrates on the one hand and very abrupt double heterojunction diode lasers based on quantum effects on the other hand. The influence of quantization effects on the emission wavelength, the threshold current and its temperature dependence are discussed. A distinction has been made between quantization due to strong magnetic fields giving rise to a one-dimensional electron gas (quantum wire) and quantization resulting from electrostatic and/or compositional changes (quantum well). The double heterojunction as a test structure to study carrier scattering into quantum wells, the phonon participation in the hot carrier relaxation process and optical flux guiding in graded heterojunctions have been emphasized. 相似文献
19.
《Comptes Rendus Physique》2003,4(6):639-648
The quantum cascade laser is a new light source based on resonant tunnelling and optical transitions between quantised conduction band states. In these semiconductor devices the principles of operation arise from the quantum engineering of electronic energy levels and tailoring of their wavefunctions. In recent years the performance of these devices has improved markedly and this semiconductor technology is now an attractive choice for the fabrication of mid-far infrared lasers in a very wide spectral range (3–80 μm). At present, quantum cascade lasers are capable of continuous-wave room temperature operation and can deliver 200–300 mW of average power (at λ∼9 μm) operating on a Peltier cooler. To cite this article: C. Sirtori, J. Nagle, C. R. Physique 4 (2003). 相似文献
20.
Amire Seyedfaraji Vahid Ahmadi Mahyar Noshiravani 《Optical and Quantum Electronics》2013,45(5):401-410
A comprehensive model is presented to study quantum well tapered lasers and quantum well stripe lasers with profiled reflectivity output facets and to obtain lateral stability in high power semiconductor laser. Simulation of semiconductor lasers is performed by numerically solving space-dependent coupled partial differential equations for the complex optical forward and backward waves, carrier density distribution and temperature distribution. The coupled equations are solved by finite difference beam propagation method. The effect of nonlinear parameters like Kerr and linewidth enhancement factors, and precise dependence of linewidth enhancement factor and gain factor on the carrier density and temperature are considered in this paper. We use modal reflector in stripe lasers to confine the lateral mode to the stripe centre and provide the stable operation. We also use unpumped window to reduce the facet temperature and improve the catastrophic optical mirror damage level of tapered lasers. 相似文献