Infrared luminescence from spark-processed silicon

The infrared (IR) photoluminescence (PL) emission of spark-processed silicon (sp-Si) was investigated. A broad and strong room temperature PL peak in the 945 nm (1.31 eV) spectral range was observed when sp-Si was excited with an argon laser. This peak is different from the PL commonly reported for anodically etched porous silicon and other silicon-based materials. The PL intensity increases substantially after annealing sp-Si between 350 and 500 °C in air after which it decreases again. The PL wavelength is observed to peak at 1010 nm by annealing sp-Si near 450 °C. It was further found that the most efficient PL occurs for a Si/O ratio of 0.3, for a small spark gap of about 1 mm, and for spark-processing times in the 15-60 min range.A model for the IR PL is proposed which mirrors that for visible PL. Specifically, it is proposed that the electrons which have been pumped by the laser from the ground state into a broad quasi-absorption band (or closely spaced absorption lines between 1.7 and 2.3 eV) revert back to lower IR levels at 1.31 eV by a non-radiative transition from where they revert radiatively to the ground state by emitting the observed 945 nm light.     

Synthesis and optical characterization of PVP and SHMP-encapsulated Mn-doped ZnS nanocrystals

Zinc sulfide semiconductor nanocrystals doped Mn²⁺ have been synthesized via a solution-based method utilizing optimum dopant concentration (4%) and employing polyvinyl pyrrolidone (PVP) and sodium hexametapolyphosphate (SHMP) as capping agents. UV-vis absorbance spectra for all of the synthesized nanocrystals show an exitonic peak at around 310 nm. The particle size and morphology were characterized by scanning electron microscopy (SEM), FT-IR, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence spectrum (PL). Diffraction data confirmed that the crystallite size is around 3-5 nm. Room temperature photoluminescence (PL) spectrum for the bare ZnS sample shows a strong band at ∼445 nm. The uncapped and capped(SHMP, PVP) ZnS:Mn²⁺ samples show a strong and broad band in the ∼580-585 nm range.     

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiN_x film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiN_x can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.     

Synthesis and characterization of zinc oxide nanoparticles by laser ablation of zinc in liquid

We report formation of colloidal suspension of zinc oxide nanoparticles by pulsed laser ablation of a zinc metal target at room temperature in different liquid environment. We have used photoluminescence, atomic force microscopy and X-ray diffraction to characterize the nanoparticles. The sample ablated in deionized water showed the photoluminescence peak at 384 nm (3.23 eV), whereas peaks at 370 nm (3.35 eV) were observed for sample prepared in isopropanol. The use of water and isopropanol as a solvent yielded spherical nanoparticles of 14-20 nm while in acetone we found two types of particles, one spherical nanoparticles with sizes around 100 nm and another platelet-like structure of 1 μm in diameter and 40 nm in width. The absorption peak of samples prepared in deionized water and isopropanol are seen to be substantially blue shifted relative to that of the bulk zinc oxide due to the strong confinement effect. The technique offers an alternative for preparing the nanoparticles of active metal.     

Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires

Zinc oxide/zinc germanium oxide (ZnO/Zn₂GeO₄) porous-like thin film and wires has been fabricated by simple thermal evaporation method at temperature about 1120 °C for 2.5 h. The structural and optical properties of the porous-like-thin film and wires have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Metal semiconductor metal (MSM) photodetector structure was used to evaluate the electrical characteristics by using current-voltage (I-V) measurements. Room temperature photoluminescence spectrum of the sample shows one prominent ultraviolet peak at 378 nm and a shoulder at 370 nm. In addition, broad visible blue emission peak at wavelength 480 nm and green emission peak at 500 nm are also observed. Strong photoelectric properties of the MSM in the UV demonstrated that the porous-like-thin film and wires contribute to its photosensitivity and therefore making ZnO/Zn₂GeO₄ wires potential photodetector in the shorter wavelength applications.     

Analysis of the effect of annealing on the photoluminescence spectra of Cu ion implanted ZnS nanoparticles

In the present study, we report the photoluminescence (PL) study of nanoparticles of ZnS implanted with Cu⁺ ions at the doses of 5×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm² and annealed at 200 and 300 °C. The photoluminescence spectra of the samples implanted at lower doses of 5×10¹⁴ and 1×10¹⁵ ions/cm² and annealed at 200 and 300 °C showed peaks at around 406, 418 and 485 nm. The PL emission peak at 485 nm was attributed to the transition of electrons from conduction band of ZnS to the impurity level formed by the implanted Cu⁺ ions. In the PL spectrum of the sample implanted at the highest dose of 5×10¹⁵ ions/cm², in addition to the emission peaks observed in the PL spectra of the samples implanted at lower doses, a peak at around 525 nm, the intensity of which decreased with increase in the annealing temperature, was observed. The emission peak at 525 nm was attributed to the transitions between sulfur and zinc vacancy levels. The full width at half maximum (FWHM) of the emission peak at 406 nm was observed to decrease with increase in annealing temperature, indicating lattice reconstruction. The observation of copper ion impurity related peak at 485 nm in the PL spectra of samples of the present study indicated that the doping of copper ions into the ZnS lattice is achievable by implanting Cu⁺ ions followed by annealing.     

Effect of Ag doping on the photoluminescence properties of ZnO films

ZnO:Ag films were grown on Si (1 0 0) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT-PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550 °C, the intensity of the near-band edge (NBE) emission at 378 nm decreased and a new emission peak at 399 nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399 nm emission should be attributed to the electron transition from the conduction band to Ag_Zn-related complexes defects radiative centers above the valence band.     

Excitation wavelength dependent photoluminescence intensity of six faceted prismatic ZnO microrods

This article presents the investigation on the large-scale synthesis of ZnO microrods with a simple low temperature hydrothermal method without using surfactants, organic solvents, or catalytic reagents. The synthesized ZnO powder is characterized with different techniques. The X-ray diffraction study reveals the excellent crystal quality of the ZnO product possessing the hexagonal (wurtzite-type) crystal structure. The scanning electron microscope observation confirms the formation of six faceted prismatic hexagonal ZnO microrods with the aspect ratio of 10. It also reveals that the ZnO microrods grow along the (0 0 0 1) direction and finally emerge with a sharp tip because of the existence of polar faces. The UV–vis spectrum shows a sharp absorption peak centered at 370 nm, which is in a good agreement with the equivalent bulk band gap value. The strong UV absorption peak implies the excellent crystal quality of the synthesized ZnO microrods. Room temperature photoluminescence spectroscopic study of the ZnO microrods with different excitation wavelengths reveals a strong band edge emission peak centered at 398 nm and a defect related visible blue emission peak at 460 nm. The decrease in photoluminescence intensity with negligible red shift in peak position is observed with increasing excitation wavelength.     

CdTe aggregates in KBr crystalline matrix

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E_g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 °C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.     

非晶碳氮纳米尖端的微结构和发光机理

利用等离子体增强热丝化学气相沉积系统,用CH₄、H₂和N₂为反应气体,在Si衬底上制备了碳氮纳米尖端。用扫描电子显微镜和显微Raman光谱仪对其进行了表征。在室温下测试了它的发光性能,发光谱由中心约为406 nm和506 nm的两条发光带组成。根据Raman散射谱,对其微结构进行了分析。结合非晶碳氮薄膜的结构和发光机理,分析了它的发光性能。