Si(111)分子束外延生长时RHEED强度振荡的观察

本文报道用反射式高能电子衍射的强度振荡测量来观察Si(111)衬底上分子束外延的生长行为,观察到了双原子层的振荡模式。振荡的衰减和恢复特性不同于Si(100)衬底上的生长行为,而同GaAs分子束外延时的特性非常相似。 关键词：     

GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长

研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2ML GaSb/1ML GaAs复合应力缓冲层上获得了高密度的、沿［100］方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同，量子点的密度可以在1.2×10¹⁰cm^-2和8×10¹⁰cm^-2进行调控.适当增加GaAs层的厚度至5ML，量子点的发光波长红移了约25nm，室温下PL光谱波长接近1300nm. 关键词： 自组装量子点 分子束外延 Ⅲ-Ⅴ族化合物半导体     

超声分子束注入密度和宽度对托克马克装置加料深度的影响

基于HL-2A托卡马克装置的真实磁场位形,应用大型边缘等离子体湍流模拟程序BOUT++中的子程序模块trans-neut对不同的超声分子束注入(SMBI)密度和宽度进行模拟.在SMBI过程中,保持单位时间内分子注入个数和注入速度恒定,在恒定通量情况下,通过调整注入分子束密度和宽度来研究SMBI注入深度的变化.研究结果表明:在注入密度较小、注入宽度较大时,SMBI的注入深度更深,分子和原子的分解率和电离率的时空区域较宽.分子分解局域化会抑制全局分解率的增长,而分解局域化又会引发局域分解率的加速增长,进而促进全局分解率的增长,促进效果占优导致在注入速度一定的情况下,恒定通量的分子注入发散角越小,分子注入深度越浅.     

Al/GaAs表面量子阱界面层的原位光调制反射光谱研究

用分子束外延（MBE）方法在GaAs表面量子阱上外延生长不同厚度的Al层，以超高真空下的原位光调制光谱（PR）作为测量手段，研究Al扩散形成的表面势垒层对于GaAs表面量子阱中带间跃迁峰位和峰形的影响.根据跃迁峰的变化，采用有效质量近似理论计算出了Al和GaAs 的互扩散长度为0.5nm，这是半导体工艺中的一个重要常数. 关键词： Al GaAs 原位光调制反射光谱（PR） 分子束外延（MBE）     

超薄层AlGaAs样品的光调制反射谱研究

用调制光谱的方法对分子束外延（MBE）生长在GaAs（100）衬底上的一组超薄层本征型Al_xGa_1-xAs层进行了原位的研究．对厚度在35nm以下的一组样品观察到了若干个跃迁峰，而对厚度在100nm的样品只观察到了一个跃迁峰．观察到的各峰随厚度的改变而变化．用台阶势模型很好地解释了实验结果 关键词：     

生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响

采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.     

量子限制受主的光致发光研究

对一系列δ掺杂浅受主铍（Be）原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光（PL）研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品，并在每量子阱中央进行了Be原子的δ掺杂，量子阱宽度为30 到200 ?.在4.2 K温度下测量了上述系列样品的光致发光谱，清楚地观察到了束缚激子的受主从基态1s_3/2（Γ₆）到第一激发态 关键词： 量子限制受主 光致发光 多量子阱 δ掺杂     

生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响

采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.     

生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响

采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.     

半导体超晶格的电子迁移率增强

分子束外延能够生长原子平滑的层、精确控制层厚度及掺杂的灵活性使其较容易地合成多组分、多层的异质结.然而,在较高的掺杂浓度下,获得高迁移率(如　　　　　　　　　　　　)普遍认为是困难的,这就大大地限制了这些材料的应用. 1978年,Dingle等首先报道了在分子束外延中采用调     

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs（311） A Substrate by molecular eam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.     

Surface structure of GaAs(211)

The atomic structures of the two inequivalent (211) surfaces of GaAs have been investigated by LEED. Both surfaces, prepared by etching and heat-cleaning or ion-sputtering and annealing, are unstable and develop large (110) facets which exhibit the atomic geometry of the (110) GaAs surface. These facets entirely cover the surface. Three sets of facets, making 30°, 30° and 54° angles with the (211) plane, are detected on one surface. Only two sets, making 30° angles with the (211) plane, are detected on the other. The reasons for this difference are not understood at this time. The LEED study of Si(211) and Ge(211) shows that the Si surface is flat whereas the Ge surface exhibits reconstructed (311) facets. The structural difference between the (211) surfaces of GaAs and Ge and the facetting of the compound are invoked to explain the problems encountered in the MBE growth of GaAs on Ge(211).     

Anharmonicity in Al vicinal surfaces of (1 0 0) with (1 1 1) step

Molecular dynamics simulations incorporating an analytic embedded atom potential have been used to investigate the atomic structure and surface order of the Al vicinal surfaces for the temperature up to 900 K. The relaxation, mean square vibrational amplitude, and structure factor as a function of temperature, and of the terrace width for the p(1 0 0) × (1 1 1) surfaces (2 ≤ p ≤ 10) are discussed. The obtained structure factor indicates that the anharmonic effect reduces with increasing terrace widths. The decrease of surface energy with increasing terrace width also supports this conclusion.     

Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS

ZnSe epilayers were grown on GaAs (1 0 0) substrates using MBE. The native contamination (oxide and carbon) was removed in situ from the substrate surfaces by conventional thermal cleaning and by exposure to atomic hydrogen. A maximum substrate temperature of 600 °C was required for the thermal cleaning process, while a substrate temperature of 450 °C was sufficient to clean the substrate using hydrogen. ZnSe epilayers were also grown on As capped GaAs epilayers, which were decapped at a maximum temperature of 350 °C. SIMS profiles showed the existence of oxygen at the interface for all of the substrate preparation methods. The oxygen surface coverage at the interface was found to be 0.03% for the atomic hydrogen cleaned substrate and 0.7% for the thermally cleaned substrate.     

Comparison of reactivity on step and terrace sites of Pd (3 3 2) surface for the dissociative adsorption of hydrogen: A quantum chemical molecular dynamics study

The notion of “active sites” is fundamental to heterogeneous catalysis. However, the exact nature of the active sites, and hence the mechanism by which they act, are still largely a matter of speculation. In this study, we have presented a systematic quantum chemical molecular dynamics (QCMD) calculations for the interaction of hydrogen on different step and terrace sites of the Pd (3 3 2) surface. Finally the dissociative adsorption of hydrogen on step and terrace as well as the influence of surface hydrogen vacancy for the dissociative adsorption of hydrogen has been investigated through QCMD. This is a state-of-the-art method for calculating the interaction of atoms and molecules with metal surfaces. It is found that fully hydrogen covered (saturated) step sites can dissociate hydrogen moderately and that a monovacancy surface is suitable for significant dissociative adsorption of hydrogen. However in terrace site of the surface we have found that dissociation of hydrogen takes place only on Pd sites where the metal atom is not bound to any pre-adsorbed hydrogen atoms. Furthermore, from the molecular dynamics and electronic structure calculations, we identify a number of consequences for the interpretation and modeling of diffusion experiments demonstrating the coverage and directional dependence of atomic hydrogen diffusion on stepped palladium surface.     

Al_(0.17)Ga_(0.83)As/GaAs(001)薄膜退火过程的热力学分析

在As_4束流等效压强为1.2×10~(-3)Pa、退火60 min条件下改变退火温度,对Al_(0.17)Ga_(0.83)As/GaAs薄膜表面平坦化的条件进行了探讨.定量分析了薄膜表面坑、岛与平台的覆盖率和台阶-平台间薄膜粗糙度随退火温度变化的规律,得到最合适的退火温度为545℃(±1℃);根据退火模型发现退火温度的改变会影响参与熟化的原子的数量,熟化原子比θ正比于退火温度,即θ∝Τ.退火温度540℃条件下退火约60 min,薄膜表面达到基本平坦,推测此时0.20θ0.25;退火温度为545℃时,推测退火时间约为55-60 min.本实验得到的结论可以为生长平坦的Al_(0.17)Ga_(0.83)As/GaAs薄膜提供理论与实验指导.     

New Ga-enriched reconstructions on the GaAs(001) surface

To prepare structure-ordered GaAs(001) surfaces at low temperatures, GaAs(001) surfaces coated with native oxides were exposed in an atomic hydrogen flow in the temperature range 280–450 °C. The new Ga-enriched GaAs(001) surfaces with the (4 × 4) and (2 × 4)/c(2 × 8) reconstructions were prepared and studied by the methods of X-ray photoelectron spectroscopy, low-energy electron diffraction, and high-resolution characteristic electron energy loss spectroscopy. For the GaAs(001)-(2 × 4) surface, the structure of the Ga-stabilized surface has been proposed and ab initio computed within the (2 × 4) Ga-trimer unit cell model.     

Stereochemistry on Si(001): angular dependence of H2 dissociation

The angular dependence of the dissociative adsorption of molecular hydrogen at terrace and step sites of vicinal single-domain Si(001) surfaces was investigated by means of molecular beam techniques and optical second-harmonic generation. A strongly anisotropic behavior was observed for terrace adsorption with polar distributions of cos3theta and cos12theta parallel and perpendicular to the dimer, respectively. The D(B)-steps show enhanced reactivity under glancing incidence in the upwards direction. The results are traced back to the directionality of the covalent surface bonds.     

Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)

A concave-shaped surface has been prepared in a 6H–SiC(0 0 0 1) substrate by mechanical grinding. As a consequence, the different crystallographic planes building up the 6H–SiC polytype are cut under continuously changing polar angles in all azimuthal directions. Through hydrogen etching, this curved surface breaks up into a whole set of surfaces vicinal to the initial 6H(0 0 0 1) orientation. The local structural reorganisation after hydrogen etching has been studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Two types of local bond environments are present at the step edges leading to a strong anisotropy in the surface etching with hydrogen. As a result, the distribution of the terrace width and the step heights varies with the azimuthal angle and reflects the sixfold symmetry of the bulk crystal. For most azimuthal directions, an alternation of large and small terraces, separated by steps of 0.75 nm heights (height of half the 6H polytype, three bilayers) is observed and only for well defined azimuthal directions, equally spaced terraces separated by steps of 1.5 nm height (one unit cell of 6H–SiC, six bilayers) are found. In addition, the polar variations have been studied by taking various line-scans along the concave-shaped surface with AFM. It seems that for polar angles above 3°, step bunching of several SiC steps occurs whereas below 3° the bimodal terrace width distribution is observed.     

Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs

The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE.