Zeta functions and transfer operators for piecewise monotone transformations

Given a piecewise monotone transformationT of the interval and a piecewise continuous complex weight functiong of bounded variation, we prove that the Ruelle zeta function (z) of (T, g) extends meromorphically to {z<^-1} (where =lim g^°T^n-1...g^°Tg ^1/n ) and thatz is a pole of if and only ifz ^–1 is an eigenvalue of the corresponding transfer operator L. We do not assume that L leaves a reference measure invariant.Research partially supported by the Fonds National Suisse     

Wetting transition on grain boundaries in Al contacting with a Sn-rich melt

The contact angle at the intersection of a grain boundary in Al bicrystals with the solid Al/liquid Al–Sn interphase boundary has been measured for two symmetric tilt <011> {001} grain boundaries with tilt angles of 32° and 38.5°. The temperature dependencies (T) present the evidence of the grain boundary wetting phase transition at T_w. The observed hysteresis is consistent with the assumption that the wetting transition is of first order. The determined discontinuity in the temperature derivative of the grain boundary energy is–5.6 J/m²K (T w1=617°C) for the boundary with a low energy (=38.5°) and –17 J/m²K (T w2=604°C) for the grain boundary with a high energy (=32°).     

H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems

H₂-induced changes of electrical conductivity in polycrystalline, undoped -Ga₂O₃ thin films in the temperature range of 400–650° C are described. The sheet conductance of these films depends reversibly, according to a power law p ^1/3, on the partial pressure of hydrogen in the ambient atmosphere of the Ga₂O₃ film. A bulk vacancy mechanism is excluded by experiments and it is shown that the interaction is based on a surface effect. Changes in conductance are discussed to result from the formation of an accumulation layer due to chemisorption on the grain surfaces. Typical coverages are determined to be approximately 10^–4 ML for pH₂=0.05 bar and T=600° C. A possible explanation of the p ^1/3 power law is provided.     

Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons

A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the natural conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°CT_irr500°C of high-temperature P traps, presumably defect clusters.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 57–60, October, 1992.     

Infrared photoemission of holes from ultrathin (3–20 nm) Pt/Ir-compound silicide films into silicon

The infrared responsivity is measured at low temperature on Schottky barrier detectors having ultrathin (3–20 nm) PtSi, IrSi, and compound silicide films as a metal electrode on p-type silicon. The total yield for internal hole photoemission is 1% per incident photon for PtSi and 0.1% for IrSi at a wavelength of =4 m. The cut-of wavelengths are =5.4 m and =8.2 m for PtSi and IrSi, respectively. The compound silicides fabricated by sequential evaporation of Pt and Ir and subsequent annealing at T=450° C show characteristics identical to that of PtSi.A Monte Carlo computer modelling is performed to simulate the scattering mechanisms in the thin silicide film leading to hole photoemission across the Schottky barrier into silicon. The optimum emission yield is observed for ultrathin films of the order of a few nanometers. The optimum film thickness is close to the escape depth d _esc2–3×L _el5 nm which scales with the mean free path L _el for quasi elastic scattering. The enhancement of the internal photoemission in ultrathin silicide films is predominantly due to the increase of the optical photoexcitation density rather than to an increase of the electrical emission yield in thin films.     

Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

A study is made of the electrophysical properties (N_s, _eff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·10¹³–10¹⁶ ions/cm²; the alloys were subsequently annealed for 10 min in an H₂ atmosphere with temperatures in the range 500–1000°C. The optimal parameters of the ionic alloys are obtained for T_i=300°C and T_a=700°C. Thermal acceptance of the GaAs under a SiO₂ film (d0.2–0.3 m) is observed for T_a>700°C. The limiting concentration of thermal acceptors N_s(TA)3·10¹³ cm^–2) for T=1000°C and t=10 min.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 22–26, March, 1979.     

Influence of Hydrothermal Temperature on Structures and Photovoltaic Properties of SnO2 Nanoparticles

Two SnO₂ nanoparticles were synthesized by hydrothermal method at 170°C and 180°C, respectively. Transmission electron microscope observations reveal that the diameters of both the nanoparticles are around 6nm. At the same time, surface photovoltage spectroscopy measurements show that the nanoparticle synthesized at 180°C has more surface electronic states at 0.3eV below the conduction band than the one synthesized at 170°C. This means that the temperatures chosen in hydrothermal synthesis have significant influence on the surface electronic characteristics of resultant SnO² nanoparticles but the effect on their sizes is not obvious. However, after being calcined at 500°C for 2h, the diameter of the nanoparticle synthesized at 180°C increased to 23nm and that of the nanoparticle synthesized at 170°C increased to 32nm as calculated from X-ray diffraction pattern.     

Measurement of the refractive index and optical absorption spectra of epitaxial bismuth substituted yttrium iron garnet films at uv to near-ir wavelengths

Refractive-index and optical-absorption spectra of Bi-substituted yttrium iron garnet films, epitaxially grown by liquid-phase epitaxy, have been measured in the spectral regime 0.26 m1.9 m by thin-film interference for 0.52 m and by ellipsometry for0.52 m. The Y_3–x–y Bi _x Pb _y Fe_5–z Pt _z O₁₂ films contain bismuth in the range Ox 1.42, lead in the range 0.01 y0.08 and platinum in the range 0.005<=z0.03. There is satisfactory coincidence between the results from ellipsometry and thin-film interference in the overlapping wavelength region. The materials investigated are the same as reported earlier from this laboratory in ter mof their magnetic and magnetooptic properties.     

Amorphous semiconducting AsSeI

It is shown on the basis of differential thermal analysis (DTA) of AsSeI samples that a reliable technique ensuring reproducible preparation of vitreous AsSeI has been found. The values of the softening and melting points are 50 °C and 220 °C, respectively.Transmittance study has been done on glasses of general compositionxAs₂Se₃+(1–x). AsSeI (forx=1.0; 0.8; 0.4; 0.0). Samples in the form of slabs of different thickness (d=0.2; 0.5; 1.0; 2.0 mm) were used to determine the wavelength dependence of the absorption coefficientK. On the basis of the results of the quoted measurements performed on thin As₂Se₃ layers in the high absorption region, the optical gap width of vitreous semiconducting AsSeI has been extrapolated, using certain simplified conceptions mentioned in the paper. The value ofE _g at 293 °K and its temperature dependence coefficient=(E _g/T)_p for AsSeI were found to be 1.91 eV and –6.7×10^–4eV/grad, respectively.     

The Yang-Lee edge singularity in spherical models

The density of Yang-Lee zeros in the thermodynamic limit is discussed for ferromagnetic spherical models of general dimensionalities and arbitrary range of interaction. In all cases the zeros lie on the imaginary axis in the complex magnetic field planeH=H+iH with a density (H) that exhibits a square root singularity(H) (H-H ₀), with=1/2, as the edge of the gap atH=H ₀(T) is approached forT>T _c. WhenTT _c one hasH ₀(T)(TT _c ) with critical exponent=+.Supported by the National Science Foundation in part through the Materials Science Center at Cornell University.