加压水介质耐μs级高电压击穿实验研究

 采用水介质同轴电极实验装置，开展了μs级充电加压水介质击穿实验研究，并对实验结果进行了分析和讨论，结果表明：在水介质正电极击穿类型的实验中，常压下水介质击穿场强与Martin公式吻合。加压水介质击穿场强随静压的增加而增加，其场强增幅与Mirza定性理论场强增幅的相对差别在5%以内。根据实验结果推导出了更为准确的水介质击穿场强随静压变化的关系式。对水介质加压，将压缩电极表面气泡，减少气泡数目，从而可以提高水介质耐高电压击穿能力。     

加压乙二醇/水混合液耐μs级高电压击穿实验研究

 采用同轴电极实验装置，在μs级充电时进行了加压乙二醇/水混合液正电极击穿实验，并对实验结果进行了分析和解释，得出结论如下：击穿场强随静压以1/8次幂的关系而增加；击穿场强系数随乙二醇浓度的增加而增加；加压和添加乙二醇对于提高水介质耐高电压击穿的能力具有可叠加性，加压比添加乙二醇更有效；在静压12×10⁵ Pa下乙二醇浓度80%的混合液击穿场强比常压下纯水击穿场强高112.2%。加压提高乙二醇/水混合液击穿场强的主要机制是加压增加了击穿延迟时间。     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法，对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上，采用有限元法计算阴极杆表面电场随二极管电压的变化规律，设计了实验系统，并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时，钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜，实验结果表明，镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约20.6%；在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜，实验结果表明，镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约28.1%。因此，在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。     

快前沿直线脉冲变压器多间隙气体开关直流自击穿特性

针对一种用于快前沿直线脉冲变压器(FLTD)的堆栈式多间隙气体开关,研究了电极表面粗糙度、电场不均匀系数、放电电流、气体压强等因素对开关自击穿电压分散性的影响.电极表面粗糙度0.1-0.8μm时,击穿电压平均值没有明显变化,击穿电压分散性小于1.5%;电场不均匀系数为1.20和1.30时,电极烧蚀均匀,开关自击穿电压分...     

不同电流下气体开关电极烧蚀特性实验研究

在不同短路电流条件下,进行了不锈钢(1Cr18Ni9Ti)电极气体火花开关连续多次自击穿放电实验,通过测量电极质量损失、表面粗糙度和自击穿电压的变化,研究电极烧蚀特性及其对自击穿性能的影响。实验结果表明:随着放电电流峰值和周期增大,电极材料烧损速率与电容电荷量呈线性增加,而电极表面烧蚀粗糙度与电流峰值呈线性增大,自击穿电压变化达到峰值和稳定区的放电次数减少,但稳定阶段的自击穿电压值及其相对标准偏差同时减少,五种放电电流情况下,自击穿电压概率密度分布均遵循高斯函数。     

电极表面特性对甘油介质击穿特性的影响

基于几种常见的电极表面处理工艺,制作了外形一致、表面不同的砂纸打磨、羊毛抛光、金属电镀和非金属电镀四种同轴电极,对比了电极在微观下的形貌特点,通过实验研究了不同电极表面特性与甘油介质耐压的关系。搭建了基于晶闸管控制的空心脉冲变压器升压实验平台,最大输出电压500 kV,上升时间26 s。实验结果表明:四种电极的微观形貌存在较大差异,并引起了甘油击穿特性的不同,在相同充电电压条件下,甘油的平均击穿场强为210~260 kV/cm;与使用常规的砂纸打磨电极相比,使用羊毛抛光、金属电镀、非金属电镀电极可分别使击穿场强提高14.51%,11.60%,19.67%,其中非金属电镀电极表面均匀程度远高于其他电极,最高击穿场强可达288 kV/cm,比对照组平均击穿场强提高33.09%。     

甘油介质在同轴形成线中的击穿特性研究

针对甘油介质在形成线中的应用,总结了甘油作为储能介质已开展的相关研究工作,并在缩比的同轴电极试件中进行了电极表面、磁场、耐压极性、含气量等条件对甘油介质击穿特性影响的实验研究。搭建了基于晶闸管控制的空心脉冲变压器升压实验平台,设计了浸没于脉冲磁场中的同轴电极击穿试件,实验平台最大输出电压500 kV,上升时间26 s,最大磁场1 T,可通过控制晶闸管的先后触发使击穿过程发生于准稳衡磁场中,并制作了外形一致、表面不同的砂纸打磨、羊毛抛光、金属电镀和非金属电镀四种电极。实验结果表明:甘油的击穿是没有极性的;1 T量级磁场对甘油介质的击穿特性无影响;不同电极表面微观形貌差异较大,使甘油介质具有不同的击穿特性,说明甘油击穿在电极表面的过程具有较大影响;充分的排气能减少甘油中直径较大的气泡,减少概率性的低击穿场强,击穿后产生的大量微小气泡会整体降低甘油的击穿阈值,使甘油的平均击穿场强降低。     

化学气相沉积SiC材料超光滑表面纳米加工

 利用传统光学加工方法，采用陶瓷磨盘和金刚石微粉对国产化学气相沉积(CVD) SiC进行了粗磨、细磨加工；然后，利用颗粒直径从4 μm到1 μm的金刚石研磨膏逐级进行抛光，发现SiC表面存在纳米级划痕；最后，改用颗粒直径为20 nm氧化铝纳米颗粒的碱性水溶液进行抛光，表面粗糙度达到0.6 nm(RMS)，表面纳米级划痕得到很好改善，获得了较高表面质量的超光滑表面。     

加压去离子水短脉冲击穿特性的初步研究

 液体的介质气泡击穿理论作为研究基础，开展了两种短脉冲下高压强水介质开关的击穿实验，获得了水介质击穿场强及耐压时间与水中压强关系的数据，通过分析比较得出：在脉宽300 ns和1 μs两种脉冲电压作用下，当水中压强逐渐提高时水介质击穿电压和耐压时间均呈上升趋势，压强越高趋势越明显，而且作用脉冲越宽水中压强对于水介质击穿特性的影响越显著。     

同轴-三平板型水介质自击穿开关设计

 在1 MV水介质自击穿开关降压实验的基础上，设计了用于脉冲功率装置的水介质输出开关，设计的最高运行电压为4 MV，放电电流600 kA。4 MW水介质自击穿开关为同轴-三平板结构，由输入输出电极、预脉冲屏蔽板和连接部件组成。在结构设计中拟使用电流线圈测量每个通道的放电电流，用开关前后传输线上靠近开关端的D-dot测量开关的输入输出电压。对开关间隙进行了2维和3维静电场分析，结果发现二者差别较大，3维静电场分析应该更接近实际电场分布。     

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results.     

Geometrical optimization of a surface DBD powered by a nanosecond pulsed high voltage

In this study, surface Dielectric Barrier Discharge (DBD) actuators powered by nanosecond pulsed high voltage are investigated. The goal is to experimentally characterize the surface DBD actuators in terms of electrical and geometrical parameters.The actuators are made of two conducting electrodes separated by a thin dielectric (Kapton films) and arranged asymmetrically. The active electrode is connected to a pulsed high voltage power supply (voltage up to ±10 kV, rise and fall times of 50 ns and pulse width of 250 ns) and the second electrode is grounded.The experimental results show that the energy per pulse (normalized by the length of the active electrode) is smaller when one increases the inter-electrode spacing between 1 and 3 mm, the thickness of the dielectric barrier between 120 and 360 μm or the length of the electrodes between 10 and 50 cm, for both applied voltage polarities.Optical characterization of the plasma layer for different electrode gaps has been investigated by using an ICCD camera. Results indicate that the plasma produced by positive and negative rising voltage propagates in a streamer-like regime with numerous and well-distributed channels, for any electrode gap distance. However, the positive and negative falling voltage produces similar discharges only for large electrode gaps. In this case, the plasma layer starts from a corona spot in contact with the active electrode and expands in the direction of the grounded electrode in a plume shape.     

Use of a liquid-metal cathode in high-vacuum studies of electric breakdown

Studies of electric breakdown in a high vacuum involving liquid-metal (mercury and gallium) cathodes, whose surfaces are stabilized by centrifugal forces, have shown that an increase in the angular velocity at which the experimental apparatus rotates causes an increase in the breakdown field; the mechanism for the vacuum breakdown is found to be independent of the voltage across the electrodes. According to the Frenkel theory, vacuum breakdown results from a disruption of the steady state on the liquid-cathode surface in an electric field. Drops of liquid metal on the anode degrade the dielectric properties of the vacuum gap. Under these conditions, the breakdown mechanism becomes dependent on the voltage across the electrodes. Oxide films on the cathode surface also degrade the dielectric properties of the vacuum gap. It is suggested that the dielectric may be charged by positive ions emitted from the cathode.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 4, pp. 44–49, April, 1969.     

Temperature dependence of characteristics of water-vapor electric discharge

The experimental results on breakdown characteristics of a discharge gap containing water vapor are presented. The results obtained show that the breakdown voltage between metal electrodes placed above water and when one electrode is immersed in water significantly increases at a saturated vapor temperature of 90°C and above. This effect can be an explanation of the features of the electric discharge development above the water surface.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

Effect of atmospheric pressure dielectric barrier discharge air plasma on electrode surface

In order to study the influence of plasma on electrode, atmospheric pressure dielectric barrier discharge (DBD) air plasma is employed here to treat copper electrode surface. Plasma is generated between the parallel plate electrodes by means of high voltage produced by a high-frequency power supply with transformer. Electrode surface alterations induced by air plasma are investigated by using field emission scanning electron microscope (FE-SEM), X-ray energy dispersion spectroscopy (EDS) and contact angle measurement. The results show that DBD air plasma removes the organic contaminant on surface and causes electrode surface roughness, oxidization and nitridation. In addition, surface wettability is also improved, as concluded from contact angle measurements.     

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.