Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K₂S₂O₈ solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K₂S₂O₈ solution has been proposed.     

The changes in morphology of Si(1 0 0) surface upon dipping in ultrapure water

The changes in morphology and chemical states of Si(1 0 0) surface upon dipping in ultrapure water were investigated by using atomic force microscope and X-ray photoelectron spectroscopy. The oxidation and the etching competitively progressed at the HF-treated Si(1 0 0) surface in ultrapure water, which made the smooth surface rough. However, the surface covered with a thick native oxide film was not etched at all. During the repetition of the oxidation and the etching, the SiO₂-nuclei was, by chance, able to grow up to some size of islands and worked as the protective barrier against the water etching. Thus, the SiO₂-islands would remain without being etched off, whereas rest parts of the surface could be etched off. This selective etching leads the surface morphology to become rough. Both the oxidation and the etching progressed violently as the water temperature and the dipping time increased.     

The effect of fluorine-based plasma treatment on morphology and chemical surface composition of biocompatible silicone elastomer

X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) have been used to investigate the effect of reactive ion etching (RIE) on poly(methylhydrogensiloxane-co-dimethylsiloxane) surface in fluorine-based plasmas. Polysiloxane layers supported on the standard silicon wafers were etched using SF₆ + O₂ or CF₄ + O₂ plasmas. SEM studies show that the polysiloxane morphology depends on plasma chemical composition strongly. Presence of a columnar layer likely covered with a fluorine rich compound was found on the elastomer surface after the CF₄ + O₂ plasma exposure. After the SF₆ + O₂ or CF₄ + O₂ plasma treatment the polysiloxane surface enriches with fluorine or with fluorine and aluminum, respectively. Different morphologies and surface chemical compositions of the silicone elastomer etched in both plasmas indicate different etching mechanisms.     

Crystallinity and dielectric relaxations in semi-crystalline poly(ether ether ketone)

The Maxwell-Wagner-Sillars (MWS) relaxation is studied for semi-crystalline polymers poly (ether ether ketone) (PEEK), in the range 20 Hz-1 MHz and temperature varying from 80 to 330 °C. The parameter is the crystallization condition in the case of PEEK, which is a semi-crystalline polymer considered as a particulate composite. The relaxation found in the semi-crystalline polymers above the α relaxation of the PEEK is ascribed to the trapping of conductive carriers at the interface between crystalline lamellae and the amorphous matrix. The study of PEEK microstructure is based on differential calorimetry and X-rays diffraction. Two lamellae populations have been detected, that depends on the crystallization temperature and its duration. The crystallinity rate is increasing with crystallization temperature and duration. In dielectric studies, the use of the electric modulus instead of permittivity allows us to minimize the ionic conduction and then leads to the appearance of the interfacial relaxation. According to our measurements, the crystallinity rate is not the main factor of the interfacial relaxation intensity, which also depends on the nature and degree of perfection of the lamellae.     

Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na2O2 solutions

In this work, an experimental study on the chemical etching reaction of polycrystalline p-type 6H-SiC was carried out in HF/Na₂O₂ solutions. The morphology of the etched surface was examined with varying Na₂O₂ concentration, etching time, agitation speed and temperature. The surfaces of the etched samples were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) Fourier transform infrared spectroscopy (FT-IR) and photoluminescence. The surface morphology of samples etched in HF/Na₂O₂ is shown to depend on the solution composition and bath temperature. The investigation of the HF/Na₂O₂ solutions on 6H-SiC surface shows that as Na₂O₂ concentration increases, the etch rate increases to reach a maximum value at about 0.5 M and then decreases. A similar behaviour has been observed when temperature of the solution is increased. The maximum etch rate is found for 80 °C. In addition, a new polishing etching solution of 6H-SiC has been developed. This result is very interesting since to date no chemical polishing solution has been developed on the material.     

Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H₂O₂ solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO₃ solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).     

Electron-assisted chemical etching of oxidized chromium

Electron-assisted chemical etching of oxidized chromium, CrO_x, has been studied by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). Two model substrates were used—10 nm CrO_x deposited on Si(1 0 0) that was covered with either native oxide or a 20 nm Au/Pd alloy film. Using chlorine and/or oxygen as etching gases, the experiments were conducted in a customized high vacuum system, equipped with a high density electron source and a low pressure reaction cell. On both substrates, electron-assisted chemical etching of CiO_x was detected by SEM, EDS and AFM. Making the method questionable for etching applications, there is substantial substrate damage associated with the etching. The SEM images indicate strongly inhomogeneous material removal, apparently initiated and propagated from specific but unidentified sites. In the experiments involving the Au/Pd film, there was phase separation of Au and Pd, and dewetting to form metallic islands. AFM data show that the etched holes were as deep as 200 nm, confirming relatively rapid etching of the Si substrate after the top layer of Cr oxide was removed.     

Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC

Ni, Ni₂Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature range of 750-1150 °C. The annealed contacts were analyzed before and after acid etching, and different features were found in unetched and etched contacts. Carbon left on the SiC surface after the acid etching of Ni₂Si contacts annealed at 960 °C was highly graphitized. In nickel contacts, the graphitization of interface carbon began at 960 °C and increased after annealing at higher temperatures. In palladium contacts, the onset of the interface carbon graphitization was observed after annealing at 1150 °C. For all three types of metallization, the minimal values of contact resistivity were achieved only when the sharp first-order peak at 1585 cm⁻¹ and distinct second-order peak at ∼2700 cm⁻¹ related to the presence of graphitized carbon were detected by Raman spectroscopy after the acid etching of contacts. The properties of unannealed secondary contacts deposited onto etched primary contacts were similar to the properties of the primary contacts unless carbon was selectively etched. The results show that ohmic behavior of Ni-based and Pd contacts on n-type SiC originates from the formation of graphitic carbon at the interface with SiC.     

Synthesis and properties of side-chain-type ion exchange membrane PEEK-g-StSO3Na for bipolar membranes

Side-chain-type ion exchange membranes (PEEK-g-StSO₃Na) were prepared by grafting poly (ether ether ketone) (PEEK) containing propenyl groups with sodium sulfonic styrene (StSO₃Na) and KH570. PEEK was synthesized by the aromatic nucleophilic polycondensation reaction of 4,4′-difluorobenzophenone, bisphenol A and diallylbisphenol A. The synthesized copolymers with the -SO₃Na group on the side chain of polymers possessed high molecular weights. The cross-linking reaction was carried out through a sol-gel reaction of the trimethoxysilane group. The copolymer membranes exhibited excellent mechanical properties due to their aromatic structure extending through the backbone and flexible StSO₃Na aliphatic chains. The ion exchange capacities (IECs) of the membranes ranged from 2.27 to 2.50 mmol g⁻¹ and the water content ranged from 107.2 to 126.1%, with both parameters increasing with StSO₃Na grafting degree. The H⁺ permeability of copolymer membranes increased with increasing IEC, reaching value above 0.3056 mol/L at 2 h, which is higher than that of Nafion^® 117 at the same measurement condition. They displayed reasonably high H⁺ permeability due to the higher acidity of benzoyl sulfonic acid group, the larger interchain spacing, which is available for water occupation, and the lower AC impedance of the bipolar membrane.     

Spherulitic Growth of Poly (Ether Ether Ketone) Crystallized at High Pressure

High-pressure crystallized poly (ether ether ketone) (PEEK) samples were prepared with a piston-cylinder apparatus by varying temperature, pressure, crystallization time, and molecular weight, and were investigated using wide-angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), and scanning electron microscopy (SEM). The applied etching experiments showed that the chemical resistance of the polymer was significantly improved through the high-pressure treatment. The results also revealed that PEEK spherulites with folded-chain lamellae as substructures and with different characteristics were formed at high pressure. Crystalline elliptical micro-spheres consisting of flake-like lamellae with rugged surfaces were observed on the etched samples with SEM, which may diversify niche applications in functional fillers, carriers, adsorbents, etc. Morphological observations suggested that such micro-spheres might possibly have evolved from a novel dendritic crystal. Furthermore, a granular substructure of the lamellae was observed in these single-phase polymer systems with rigid molecular backbones, which further confirmed the model developed by Strobl for polymer crystallization.     

The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface

The effect of hydrogen on the reactive ion etching (RIE) of GaAs in the CF₂Cl₂ plasma is discussed. The addition of hydrogen into the reaction mixture improves the sharpness of etch borders; the etched surface is smooth for etching depth > 1 μm, etching rate is time-constant.     

Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere

Single crystal ferrite has been etched by focused Ar⁺ laser irradiation in a CCl₄ gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl₄ atmosphere, such cracks were not observed. An etching rate of 68 /s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.     

Formation of aligned silicon nanowire on silicon by electroless etching in HF solution

It was demonstrated that the etching in HF-based aqueous solution containing AgNO₃ and Na₂S₂O₈ as oxidizing agents or by Au-assisted electroless etching in HF/H₂O₂ solution at 50 °C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters ∼10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.     

The effects of dimethyl ether and ethanol on benzene and soot formation in ethylene nonpremixed flames

Soot volume fractions, C1-C12 hydrocarbon concentrations, and gas temperature were measured in ethylene/air nonpremixed flames with up to 10% dimethyl ether (CH₃OCH₃) or ethanol (CH₃CH₂OH) added to the fuel. The measurement techniques were laser-induced incandescence, photoionization mass spectroscopy, and thermocouples. Oxygenated hydrocarbons have been proposed as soot-reducing fuel additives, and nonpremixed flames are good laboratory-scale models of the fuel-rich reaction zones where soot forms in many full-scale combustion devices. However, addition of both dimethyl ether and ethanol increased the maximum soot volume fractions in the ethylene flames studied here, even though ethylene is a much sootier fuel than either oxygenate. Furthermore, dimethyl ether produced a larger increase in soot even though neat dimethyl ether flames produce less soot than neat ethanol flames. The detailed species measurements suggest that the oxygenates increase soot concentrations because they decompose to methyl radical, which promotes the formation of propargyl radical (C₃H₃) through C1 + C2 addition reactions and consequently the formation of benzene through propargyl self-reaction. Dimethyl ether has a stronger effect than ethanol because it decomposes more completely to methyl radical. Ethylene does not decompose to methyl, so its flames are particularly sensitive to this mechanism; the alkane-based fuels used in most practical fuels do decompose to methyl radical, so the mechanism will be much less important for practical devices.     

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.     

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

This paper studies the wet etching behavior of AZO (ZnO:Al) transparent conducting film with tetramethylammonium hydroxide (TMAH). The optimum optoelectronic film is prepared first using designated RF power, film thickness and controlled annealing heat treatment parameters. The AZO film is then etched using TMAH etchant and AZ4620 photoresist with controlled etchant concentration and temperature to examine the etching process effect on the AZO film optoelectronic properties. The experimental results show TMAH:H₂O = 2.38:97.62 under 45 °C at the average etch rate of 22 nm/min as the preferred parameters. The activation energy drops as the TMAH concentration rises, while the etch rate increases along with the increase in TMAH concentration and temperature. After lithography, etching and photoresist removal, the conductivity of AZO film dramatically drops from 2.4 × 10⁻³ Ω cm to 3.0 × 10⁻³ Ω cm, while its transmittance decreases from 89% to 83%. This is due to the poor chemical stability of AZO film against AZ4620 photoresist, leading to an increase in surface roughness. In the photoresist postbaking process, carbon atoms diffused within the AZO film produce poor crystallinity. The slight decreases in zinc and aluminum in the thin film causes a carrier concentration change, which affect the AZO film optoelectronic properties.     

Study of water uptake in poly(ether ether ketone) irradiated by MeV O+ and Au+ ions

Poly(ether ether ketone) (PEEK) was irradiated with 4?MeV O⁺ and 5 and 10?MeV Au⁺ ions to the fluences from 10¹² to 10^14?cm^?2 and then treated in 5 M/l water solution of LiCl for one month at room temperature. After drying and removal of LiCl surface contamination, the depth distribution of LiCl embeded in PEEK was measured by the neutron depth profilig method (NDP) sensitive to ⁶Li isotope. Embeded LiCl is believed to map distribution of water diffusing into PEEK interior. The results show that the PEEK irradiated to the fluences above 1.10¹³cm^?2 is prone to water penetration to the depths of few microns. On the pristine PEEK and that irradiated to lower ion fluences only a surface Li contamination is observed.     

New perspectives about molecular arrangement of primary and permanent dentin

The dentin quality of primary and permanent teeth was inspected by Fourier transformed Raman spectroscopy (FT-Raman); scanning electron microscopy/energy-dispersive spectroscopy (SEM/EDS) and hardness test. Middle dentin of crowns were reached by carbide bur abrading providing a uniform smear layer. Phosphoric acid was applied in order to simulate the etching of total etching adhesive systems. The groups were (n = 10): G1 (primary dentin smear layer); G2 (35% phosphoric acid etched primary dentin); G3 (permanent dentin smear layer); G4 (35% phosphoric acid etched permanent dentin). FT-Raman results were subjected to cluster analysis. SEM/EDS were made in order to add the data obtained by FT-Raman. The hardness data were subjected to ANOVA and Tukey test. FT-Raman showed differences among groups, either to organic or inorganic content. For the organic content, primary and permanent dentin became similar after the etching; conversely, the inorganic content showed differences for the two substrates. Hardness test showed no significant differences between primary and permanent dentin, before or after etching, but the etching decreased these values. The mineral content arrangement of primary dentin is different from permanent dentin, independently of the etching. The substrate type did no influence the hardness, but the etching decreased it.     

XeCl laser controlled chemical etching of aluminum in chlorine gas

The 308 nm XeCl laser assisted etching process of thin Al metal films on Si substrate in Cl₂ gas was investigated. Etch rates were measured versus the laser fluence on the sample, the laser repetition rate, the Cl₂ pressure and the sample temperature. Irradiation experiments under vacuum of films which were previously exposed to Cl₂, and laser assisted etching in rare gases, nitrogen and air mixtures with Cl₂ were also performed to elucidate the mechanism of the etching process. The surface morphology was investigated by scanning electron microscopy. The results show that a) Etch rates of up to about 1.5 m per pulse are obtained which are strongly dependent on the Cl₂ pressure and sample temperature. b) The etching mechanism is essentially a chemical chlorination of the Al in between the laser pulses which is followed by photo-ablation of the reaction products, c) AlCl₃ evaporation and redeposition processes can explain the observed results. d) The Al films can be etched fully and cleanly without damage to the smooth Si substrate. e) Etching through adjacent or imaged mask on the Al film yielded relatively smooth and well defined Al walls with structures of the order of 1 m.     

CH4 dissociation on Ni surfaces: Density functional theory study

CH₄ dissociation on Ni surfaces, which is important in CH₄ reforming reactions, was discussed by using density functional theory. It was found that the CH_x species were changed to anions after chemisorption. The site preference of CH_x (x = 0-3) species on Ni(1 1 1), Ni(1 0 0) and Ni(1 1 0) was located on the basis of the computed chemisorption energies. Ni(1 0 0) is the most preferred surface for CH₄ dissociation, compared to Ni(1 1 0) and the widely investigated Ni(1 1 1).