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1.
通过脉冲电沉积,外延生长出小单元长度的Bi2Te3/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi2Te3/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.  相似文献   

2.
(Na0.85K0.15)0.5Bi0.5TiO3 thin films were deposited on LaNiO3(LNO)/SiO2/Si(1 0 0) and Pt/Ti/SiO2/Si(1 0 0) substrates by metal-organic decomposition, and the effects of bottom electrodes LNO and Pt on the ferroelectric, dielectric and piezoelectric properties were investigated by ferroelectric tester, impedance analyzer and scanning probe microscopy, respectively. For the thin films deposited on LNO and Pt electrodes, the remnant polarization 2Pr are about 22.6 and 8.8 μC/cm2 under 375 kV/cm, the dielectric constants 238 and 579 at 10 kHz, the dielectric losses 0.06 and 0.30 at 10 kHz, the statistic d33eff values 95 and 81 pm/V. The improved piezoelectric properties could make (Na1−xKx)0.5Bi0.5TiO3 thin film as a promising candidate for piezoelectric thin film devices.  相似文献   

3.
In this study, SnO2/TiO2 thin films are fabricated on SiO2/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO2/Si substrates. Therefore, the results suggest that SiO2/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO2/TiO2 films.  相似文献   

4.
La掺杂对Bi4Ti3O12薄膜铁电性能的影响   总被引:4,自引:0,他引:4       下载免费PDF全文
郭冬云  王耘波  于军  高俊雄  李美亚 《物理学报》2006,55(10):5551-5554
利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论. 关键词: 铁电性能 4Ti3O12薄膜')" href="#">Bi4Ti3O12薄膜 3.25La0.75Ti3O12薄膜')" href="#">Bi3.25La0.75Ti3O12薄膜 sol-gel法 La掺杂  相似文献   

5.
Y.J. Guo  X.T. Zu  B.Y. Wang  X.D. Jiang  X.D. Yuan  H.B. Lv  S.Z. Xu 《Optik》2009,120(18):1012-1015
Two-layer ZrO2/SiO2 and SiO2/ZrO2 films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO2/SiO2 and SiO2/ZrO2 films. To explain the difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films, porous ratio and surface morphology of monolayer SiO2 and ZrO2 films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO2/SiO2 films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO2/ZrO2 films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO2 layer had diffused through the entire SiO2 layer. The difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films was influenced by the microstructure of SiO2 and ZrO2.  相似文献   

6.
A novel flower-shaped Bi2O3 superstructure has been successfully synthesized by calcination of the precursor, which was prepared via a citric acid assisted hydrothermal process. The precursor and Bi2O3 were characterized with respect to morphology, crystal structure and elemental chemical state by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It was shown that both the precursor and Bi2O3 flower-shaped superstructure were constructed of numerous nanosheets while the nanosheets consisted of a great deal of nanoparticles. Furthermore, key factors for the formation of the superstructures have been proposed; a mechanism for the growth of the superstructure has been presented based on the FESEM investigation of different growth stages.  相似文献   

7.
When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO2 thin film at high substrate temperature. By means of the two reactions, SiC/SiO2 composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO2, especially, SiO2 phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO2 composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO2 composite thin film.  相似文献   

8.
Bi2O2CO3 nanosheet with a thickness of less than 20 nm was synthesized via hydrothermal and solvothermal process. The properties of the as-prepared nanosheet were characterized by X-ray diffraction, scanning electron microscopy, and diffuse reflectance spectra. The electronic structure was investigated using first-principle calculations. Application of the as-prepared Bi2O2CO3 nanosheet in photocatalysis was also studied.  相似文献   

9.
Aligned SiOx nanowire arrays standing on a Si substrate were successfully synthesized using a simple method by heating a single-crystalline Si slice covered with SiO2 nanoparticles at 1000 °C in a flowing Ar atmosphere. The SiOx nanowire arrays were characterized by scanning electron microscopy and transmission electron microscopy. The SiOx nanowires become progressively thinner from bottom to top. The formation process of the SiOx nanowire arrays is closely related to a vapor–solid mechanism. Room-temperature photoluminescence measurements under excitation at 260 nm showed that the SiOx nanowire arrays had a strong blue–green emission at 500 nm (about 2.5 eV), which may be related to oxygen defects. Received: 29 April 2002 / Accepted: 30 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551-559-1434, E-mail: gwmeng@mail.issp.ac.cn  相似文献   

10.
Multilayer nanowire arrays of a new heterogeneous thermoelectric material, Bi2Te2Se/Te, were successfully fabricated by a template-assisted pulsed electrodeposition method. The nanowires were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, respectively. The diameter of the nanowires is in the range of 60–85 nm. By adjusting the concentration of Te precursor, the length of the Te segment can be modulated. At sufficient low concentration of Te precursor, the phase composition of the other segment can even be changed from Bi2Te2Se to Bi2Se2Te. The formation and growth mechanisms of the nanowires were proposed.  相似文献   

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