NO-methanol interaction on the surface of Pt(3 3 2)

The interaction between NO and CH₃OH on the surface of stepped Pt(3 3 2) was investigated using Fourier transform infra red reflection-absorption spectroscopy (FTIR-RAS) and thermal desorption spectroscopy (TDS). At 90 K, pre-dosed CH₃OH molecules preferentially adsorb on step sites, suppressing the adsorption of NO molecules on the same sites. However, due to a much stronger interaction with Pt, at 150 K and higher, the adsorption of NO molecules on step sites is restored, giving rise to peaks closely resembling those of NO molecules adsorbed on clean Pt(3 3 2) surface. Adsorbed CH₃OH is very reactive on this surface, and is readily oxidized to formate in the presence of O₂, even at 150 K. In contrast, reactions between CH₃OH and co-adsorbed NO are slight to non-existent. There are no new peaks in association with intermediates resulting from CH₃OH-NO interactions. It is concluded that the reduction of NO with CH₃OH on Pt(3 3 2) does not proceed through a mechanism of forming intermediates.     

Molecular dynamics simulation of CH3 interaction with Si(1 0 0) surface

Molecular dynamics simulations of the CH₃ interaction with Si(1 0 0) were performed using the Tersoff-Brenner potential. The H/C ratio obtained from the simulations is in agreement with available experimental data. The results show that H atoms preferentially react with Si. SiH is the dominant form of SiH_x generated. The amount of hydrogen that reacts with silicon is essentially energy-independent. H atoms do not react with adsorbed carbon atoms. The presence of C-H bonds on the surface is due to molecular adsorption.     

The dehydrogenation of CH4 on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces: A density functional theory study

CH₄ dehydrogenation on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces has been investigated by using density functional theory (DFT) slab calculations. On the basis of energy analysis, the preferred adsorption sites of CH_x (x = 0-4) and H species on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces are located, respectively. Then, the stable co-adsorption configurations of CH_x (x = 0-3) and H are obtained. Further, the kinetic results of CH₄ dehydrogenation show that on Rh(1 1 1) and Rh(1 0 0) surfaces, CH is the most abundant species for CH₄ dissociation; on Rh(1 1 0) surface, CH₂ is the most abundant species, our results suggest that Rh catalyst can resist the carbon deposition in the CH₄ dehydrogenation. Finally, results of thermodynamic and kinetic show that CH₄ dehydrogenation on Rh(1 0 0) surface is the most preferable reaction pathway in comparison with that on Rh(1 1 1) and Rh(1 1 0) surfaces.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Density functional theory study into the adsorption of CO2, H and CHx (x = 0-3) as well as C2H4 on α-Mo2C(0 0 0 1)

The structures and energetics of the chemisorbed CO₂, CH_x species and H as well as C₂H₄ on the α-Mo₂C(0 0 0 1) surface have been computed at the GGA-RPBE level of density functional theory. It is found that CO₂ adsorbs dissociately into CO and O, in agreement with the experimental finding. The adsorbed O, CH_x and H species prefer the site of three surface molybdenum atoms over a second layer carbon atom (V_C site). On the basis of the calculated adsorption energies of CH_x and H, the sequential dehydrogenation of CH₄ and the C/C coupling reaction of CH_x have been discussed.     

Thermal reactions of 2-iodoethanol on Cu(1 0 0)

Temperature-programmed reaction/desorption, X-ray photoelectron spectroscopy, and reflection-absorption infrared spectroscopy have been employed to investigate the reactions of ICH₂CH₂OH on Cu(1 0 0) under ultrahigh-vacuum conditions. ICH₂CH₂OH can dissociate on Cu(1 0 0) at 100 K, forming a -CH₂CH₂OH surface intermediate. Density functional theory calculations predict that the -CH₂CH₂OH is most probably adsorbed on atop site. -CH₂CH₂OH on Cu(1 0 0) further decomposes to yield C₂H₄ below 270 K. No evidence shows the formation of -CH₂CH₂O- intermediate in the reactions of ICH₂CH₂OH on Cu(1 0 0) in contrast to the decomposition of BrCH₂CH₂OH on Cu(1 0 0) and ICH₂CH₂OH on Ag(1 1 1) and Ag(1 1 0), exhibiting the effects of carbon-halogen bonds and metal surfaces.     

Kinetic aspect of CO2 reforming of CH4 on Ni(1 1 1): A density functional theory calculation

Reaction pathways of CO₂ reforming of CH₄ on Ni(1 1 1) were investigated by using density functional theory calculation. The computed kinetic parameters agree with the available experimental data, and a new and simplified mechanism was proposed on the basis of computed energy barriers. The first step is CO₂ dissociation into surface CO and O (CO₂ → CO + O) and CH₄ sequentially dissociation into surface CH and H (CH₄ → CH₃ → CH₂ → CH). The second step is CH oxygenation into CHO (CH + O → CHO), which is more favored than its dissociation into C and hydrogen (CH → C + H). The third step is the dissociation of CHO into surface CO and H (CHO → CO + H). Finally, H₂ and CO desorb from Ni(1 1 1) and form free H₂ and CO. The rate-determining step is the CH₄ dissociative adsorption, and the key intermediate is surface adsorbed CHO. Parameters, which might modify the proposed mechanism, have been analyzed. In addition, the formation, deposition and elimination of surface carbon have been discussed accordingly.     

In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(1 0 0) surface

The intermediates of thermal decomposition of 1,3-disilabutane (SiH₃CH₂SiH₂CH₃, DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH₄Si₂, which is the first observation on Si(1 0 0) surface, and further decomposed to CH₄Si between 150 and 900 K. CH₄Si lost hydrogen and formed SiC over 900 K.     

Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 × 4 surface

Adsorption process of methylchloride (CH₃Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH₃Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH₃Cl exposed surface. They were largely observed at the “B-type” step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH₃Cl molecules without any dissociation. The adsorption mechanism of CH₃Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.     

Adsorption of CO, CO2 and NO molecules on a BaTiO3 (0 0 1) surface

Since the development of Scanning Tunnelling Microscopy (STM) technique, considerable attention has been devoted to various molecules adsorbed on various surfaces. Also, a new concept emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale are thus particularly invaluable. The present work describes the first Density Functional Theory (DFT) study of adsorption of CO, CO₂ and NO molecules on a BaTiO₃ surface following a first preliminary calculation of O and O₂ adsorption on the same surface. In the previously considered work, we found that a (0 0 1) surface with BaO termination is more stable than the one with TiO₂-termination. Consequently, we extended our study to CO, CO₂ and NO molecules adsorbed on a (0 0 1) surface with BaO termination. The present calculation was performed on a (1 × 1) cell with one monolayer of adsorbed molecules. Especially, a series of cases implying CO molecules adsorbed in various geometrical configurations has been examined. The corresponding adsorption energy varies in the range of −0.17 to −0.10 eV. The adsorption energy of a CO₂ molecule directly located above an O surface atom (called O_s) is of the order of −0.18 eV. The O-C distance length is then 1.24 Å and the O-C-O and O-C-O_s angles are 134.0° and 113.0°, respectively. For NO adsorption, the most important induced structural changes are the followings: (i) the N-O bond is broken when a NO molecule is absorbed on a Ba-O_s bridge site. In that case, N and O atoms are located above an O and a Ba surface atom, respectively, whereas the O-Ba-O_s and N-O_s-Ba angles are 106.5° and 63.0°, respectively. The N-O distance is as large as 2.58 Å and the adsorption energy is as much as −2.28 eV. (ii) In the second stable position, the NO molecule has its N atom adsorbed above an O_s atom, the N-O axis being tilted toward the Ba atom. The N-O_s-Ba angle is then 41.1° while the adsorption energy is only −0.10 eV. At last, the local densities of states around C, O as well as N atoms of the considered adsorbed molecules have also been discussed.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

A density-functional study on the atomic geometry and adsorption of the Cu(1 0 0) c(2 × 2)/N Surface

In this work we have performed total-energy calculations on the geometric structure and adsorption properties of Cu(1 0 0) c(2 × 2)/N surface by using the density-functional theory and the projector-augmented wave method. It is concluded that nitrogen atom was adsorbed on a FFH site with a vertical distance of 0.2 Å towards from surface Cu layer. The bond length of the shortest Cu-N bonding is calculated to be 1.83 Å. Geometry optimization calculations exclude out the possibilities of adsorbate induced reconstruction mode suggested by Driver and Woodruff and the atop structural model. The calculated workfunction for this absorbate-adsorbent system is 4.63 eV which is quite close to that of a clean Cu(1 0 0) surface. The total-energy calculations showed that the average adsorption energy per nitrogen in the case of Cu(1 0 0) c(2 × 2)-N is about 4.88 eV with respect to an isolated N atom. The absorption of nitrogen on Cu(1 0 0) surface yields the hybridization between surface Cu atoms and N, and generates the localized surface states at −1.0 eV relative to Fermi energy E_F. The stretch mode of the adsorbed nitrogen at FFH site is about 30.8 meV. The present study provides a strong criterion to account for the local surface geometry in Cu(1 0 0) c(2 × 2)/N surface.     

A theoretical study of CH4 dissociation on Pt(1 0 0) surface

Density functional theory calculations have been performed on the adsorption of H and CH₃, and the dissociation of CH₄ on Pt(1 0 0) surface. It was found that H was adsorbed on the top and bridge sites, while CH₃ was adsorbed only on the top site. The coadsorption of methyl and hydrogen which has also been investigated shows that the interaction between the two adsorbates is stabilising. In addition, two distinct pathways were explored, differing by the initial adsorbed state of CH₄. They converge readily to the same transition state corresponding to an activation energy value of 0.53 eV. These results compare favourably with existing data in the literature for Pt(1 1 1) and Pt(1 1 0).     

Formation of vinylidene and vinylene by selective reactivity of Si(1 0 0)2 × 1 towards iso, cis and trans isomers of dichloroethylene

The room temperature (RT) chemisorption of three (iso, cis and trans) isomers of dichloroethylene (DCE) on Si(1 0 0)2 × 1 have been investigated by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Unlike ethylene, the lack of molecular desorption features in the TPD data effectively rules out the cycloaddition adsorption mechanism for all three isomers. XPS spectra show that cis- and trans-DCE adsorb dissociatively on the 2 × 1 surface in equal proportion as mono-σ bonded 2-chlorovinyl and di-σ bonded vinylene adspecies, which could be produced by dechlorination mechanisms involving the proposed tri-atom π-complex and diradical intermediates, respectively. Acetylene (m/z 26) evolution from 2-chlorovinyl adspecies at 590 K and vinylene at 750 K are also observed for both cis- and trans-DCE, further confirming the common adsorption mechanisms for these geometrical isomers and the relative stabilities of the adspecies. In contrast, only vinylidene adspecies is found for iso-DCE, which indicates that the high ionicity of the CCl₂ group favours the diradical dechlorination mechanism. The single m/z 26 desorption peak for iso-DCE adspecies observed at a higher temperature (780 K) than cis and trans isomers is consistent with the higher adsorption energy of vinylidene than vinylene on Si(1 0 0) obtained in our ab initio calculations. The different relative locations of the Cl atoms in these isomers therefore play a crucial role in controlling the adsorption and thermal evolution on Si(1 0 0)2 × 1. The selective reactivity of the 2 × 1 surface towards these isomers can be used to generate vinylene or vinylidene templates from their corresponding adspecies.     

High resolution analysis of the rotational levels of the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states of SO2

A high resolution (0.0018 cm⁻¹) Fourier transform instrument has been used to record the spectrum of an enriched ³⁴S (95.3%) sample of sulfur dioxide. A thorough analysis of the ν₂, 2ν₂ − ν₂, ν₁, ν₁ + ν₂ − ν₂, ν₃, ν₂ + ν₃ − ν₂, ν₁ + ν₂ and ν₂ + ν₃ bands has been carried out leading to a large set of assigned lines. From these lines ground state combination differences were obtained and fit together with the existing microwave, millimeter, and terahertz rotational lines. An improved set of ground state rotational constants were obtained. Next, the upper state rotational levels were fit. For the (0 1 0), (1 1 0) and (0 1 1) states, a simple Watson-type Hamiltonian sufficed. However, it was necessary to include explicitly interacting terms in the Hamiltonian matrix in order to fit the rotational levels of the (0 2 0), (1 0 0) and (1 0 1) states to within their experimental accuracy. More explicitly, it was necessary to use a ΔK = 2 term to model the Fermi interaction between the (0 2 0) and (1 0 0) levels and a ΔK = 3 term to model the Coriolis interaction between the (1 0 0) and (0 0 1) levels. Precise Hamiltonian constants were derived for the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states.     

The preparation of c-axis epitaxial Bi-2212 films on STO(1 0 0) by sol-gel method

Bi₂Sr₂Ca₁Cu₂O_8+δ (Bi-2212) films were grown on (1 0 0) oriented SrTiO₃ (STO) substrate using sol-gel spin-coating method. The effects of heat treatment conditions and coating times on the phase formation and surface morphology were investigated using thermal analysis, optical microscope, X-ray diffraction, and scanning electronic microscopy. Mixed phases were formed from 820 to 840 °C, and Bi-2212 single phase was obtained at 830 °C for 3 h. c-axis epitaxial films with smooth surfaces were obtained by drying at 600 °C and coating for 5 times.     

A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces

The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investigated on the basis of first-principles surface phase diagrams, in which adsorption-desorption behavior is described by comparing the calculated adsorption energy obtained by total-energy electronic-structure calculations with vapor-phase chemical potential estimated by quantum statistical mechanics. The calculated surface phase diagram as functions of temperature and As₂ pressure demonstrates that both Ga and As atoms are adsorbed on the Ga-vacancy site of GaAs(1 1 1)A-(2×2) surface under low As-pressure conditions, resulting in the formation of (2×2) surface with an As adatom. The surface phase diagrams as functions of temperature and Si pressure also reveal that an Si atom can be adsorbed on the (2×2) surface with an As adatom for temperatures less than ∼1160 K and this Si atom can occupy one of As-lattice sites after the incorporation of another As atom, leading to p-type conductivity. In contrast, the (2×2) surface with an As trimer is found to be stabilized under high As-pressure conditions. The surface phase diagram for Si incorporation clarify that an Si atom can be adsorbed at one of Ga-lattice sites of the (2×2) surface with an As trimer for temperatures less than ∼870 K. These calculated results provide one of possible explanations for the formation of p-type and n-type GaAs on GaAs(1 1 1)A surfaces under low and high As-pressure conditions, respectively.     

Formation of strontium template on Si(1 0 0) by atomic layer deposition

The formation of ordered Sr overlayers on Si(1 0 0) by Atomic Layer Deposition (ALD) from bis(triisopropylcyclopentadienyl) Strontium (Sr(C₅ⁱPr₃H₂)₂) and H₂O has been investigated. SrO overlayers were deposited on a 1-2 nm SiO₂/Si(1 0 0) substrate, followed by a deoxidation process to remove the SiO₂ layer at high temperatures. Auger electron spectroscopy, Rutherford backscattering spectrometry, spectroscopic ellipsometry, and low-energy electron diffraction were used to investigate the progress of both ALD and deoxidation processes. Results show that an ordered Sr/Si(1 0 0) surface with 2 × 1 pattern can be obtained after depositing several monolayers of SrO on Si using ALD followed by an anneal at 800-850 °C. The (2 × 1) ordered Sr/Si(1 0 0) surface is known to be an excellent template for the epitaxial growth of SrTiO₃ (STO) oxide. The present results demonstrate that ALD is a potential alternative to molecular beam epitaxy methods for the fabrication of epitaxial oxides on semiconductor substrates.     

High-resolution photoemission studies of the interfacial reactivity and interfacial energetics of Au and Cu Schottky barriers on methyl-terminated Si(1 1 1) surfaces

The Schottky junction formation by the stepwise evaporation of gold and copper, respectively, onto methyl-terminated silicon, CH₃-Si(1 1 1), was investigated by synchrotron X-ray photoelectron spectroscopy. During the junction formation process, interface reactions occurred as revealed by the appearance of chemically shifted Si 2p components. Upon deposition of Au, the formation of about one monolayer of gold silicide, SiAu₃, with a Si 2p chemical shift of +0.75(2) eV, was observed. The SiAu₃ floated on top of the growing gold layer. Similarly, for the deposition of Cu, the methyl termination layer was partially disrupted, as indicated by the appearance of a −0.28(2) eV chemically shifted Si 2p component attributable to an interfacial copper silicide phase, SiCu₃. Hence, the termination of the Si(1 1 1) surface by methyl groups did not completely prevent interfacial reactions, but did reduce the amount interfacial reaction products as compared to bare Si(1 1 1)-(7 × 7) surfaces.Electron Schottky barrier heights of 0.78(8) eV (Au) and 0.61(8) eV (Cu) were measured. Within the experimental uncertainty the observed Schottky barriers were identical to those ones obtained on non-passivated, (7 × 7)-reconstructed Si(1 1 1) surfaces. Thus, the modification of the electronic properties of the silicon-metal contact requires the complete absence of interfacial reactions.     

Site-blocking effects of preadsorbed H on Pt(1 1 1) probed by 1,3-butadiene adsorption and reaction

The influence of hydrogen coadsorption on hydrocarbon chemistry on transition metal surfaces is a key aspect to an improved understanding of catalytic selective hydrogenation. We have investigated the effects of H preadsorption on adsorption and reaction of 1,3-butadiene (H₂CCHCHCH₂, C₄H₆) on Pt(1 1 1) surfaces by using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). Preadsorbed hydrogen adatoms decrease the amount of 1,3-butadiene chemisorbed on the surface and chemisorption is completely blocked by the hydrogen monolayer (saturation) coverage (θ_H = 0.92 ML). No hydrogenation products of reactions between coadsorbed H adatoms and 1,3-butadiene were observed to desorb in TPD experiments over the range of θ_H investigated (θ_H = 0.6-0.9 ML). This is in strong contrast to the copious evolution of ethane (CH₃CH₃, C₂H₆) from coadsorbed hydrogen and ethylene (CH₂CH₂, C₂H₄) on Pt(1 1 1). Hydrogen adatoms effectively (in a 1:1 stoichiometry) remove sites from interaction with chemisorbed 1,3-butadiene, but do not affect adjacent sites. The adsorption energy of coadsorbed 1,3-butadiene is not affected by the presence of hydrogen on Pt(1 1 1). The chemisorbed 1,3-butadiene on hydrogen preadsorbed Pt(1 1 1) completely dehydrogenates to H₂ and surface carbon upon heating without any molecular desorption detected, which is identical to that observed on clean Pt(1 1 1). In addition to revealing aspects of site blocking that should have broad implications for hydrogen coadsorption with hydrocarbon molecules on transition metal surfaces in general, these results also provide additional basic information on the surface science of selective catalytic hydrogenation of butadiene in butadiene-butene mixtures.