Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Vibrational spectroscopy of Cm-C/Cb-Cb stretching vibrations of copper tetramesityl porphyrin: An algebraic approach

Using Lie algebraic techniques and simpler expressions of the matrix elements of Majorana and Casimir operators given by us, we obtain an effective Hamiltonian operator which conveniently describes stretching vibrations of biomolecules. For a copper tetramesityl porphyrin molecule, the higher excited vibrational levels are calculated by applying the U(2) algebraic approach.     

Magnetic properties of Fe1−xCoxO

Measurements are reported for the magnetic susceptibility of solid solutions Fe_1-xCo_xO for compositions with x =0.10 to 0.95 and for the temperature range 4.2 to 600 K. It is found that the Curie-Weiss law is obeyed at high temperatures while the dependence of the susceptibility and transition temperature on composition appear to be in good agreement with the “virtual crystal” approximation.     

Rotational analysis of a red A′ 2Σ+-X 2Πi system of CuO

High dispersion rotational analysis of a red CuO band system has led to the identification of an $\text{A′}{}^2\text{Σ}{}^{\mathrm{+}}\text{-X}{}^2\text{Π}{}_{\mathrm{i}}$ transition. The anomalous appearance of the branches is due to a very large spin splitting of the ²Σ upper state. The influence of centrifugal distortion effects on this spin splitting (γ_D and γ_H parameters) is essential for explaining the band structure. A reassignment of electronic symmetries of all the ²Σ states of CuO is proposed.     

Elastic properties of the RIV-RIII rotator phases of alkanes

A model free energy has been constructed to describe the R_IV-R_III rotator phase transition in alkanes in terms of the elastic strains and order parameter. The conditions for the R_IV-R_III phase transition are discussed. From the free energy, the order parameter and the elastic strains are determined. The model free energy describes the first or second order character of the R_IV-R_III transition depending on the strength of the coupling. The elastic properties in the vicinity of the R_IV-R_III transition are discussed on the basis of a free energy expansion. The temperature dependence of the elastic constants is calculated on both sides of the transition. The coupling between the order parameter and elastic stains is shown to have a crucial influence on the phase behavior and the order of the transition.     

Reststrahlen spectra of CdxSr1−xO

Measurements of the reflection spectra of polycrystalline Cd_xSr_1−xO alloys (0 ? x ? 0.9) at 85 and 300 K in the spectral range of lattice vibrations (200–600 cm⁻¹) are reported. By Kramers-Kronig analysis the optical constants and the LO-mode frequencies were evaluated. The samples showed essentially one-mode behaviour with marked fine structure of the low-temperature absorption for intermediate values of x. Up to now, applying the cluster model of Verleur and Barker has not yielded a tentative explanation.     

Extension of Rydberg absorption series of N2, A 2Πu ← X 1Σg+

Rydberg absorption series of N₂ converging to the $\text{A}{}^2\text{Π}{}_{\mathrm{u}}$ state of N₂⁺ have been reinvestigated with a 6.65-m normal incidence vacuum spectrograph in the second order. Previously known A ← X series (I) and (II) have been extended to higher members with m ～ 40 and up to v′ = 7.     

Surface states and tunneling spectroscopy of high-Tcsuperconductors

Recent studies of high- T_csuperconductors have clarified new aspects of tunneling spectroscopy. The unconventional pairing states, i.e. d-wave symmetry in these materials have been established through various measurements. Differently from isotropic s-wave superconductors, d-wave pairing states have an internal phase of the pair potential. The internal phase modifies the surface states due to the interference effect of the quasiparticles. Along these lines, a novel formula of tunneling spectroscopy has been presented that fully takes into account of the anisotropy of the pair potential. The most essential difference of this formula from conventional ones is that it suggests the phase-sensitive capability of tunneling spectroscopy. The formula suggests that the symmetry of the pair potential is determined by the orientational dependence measurements of tunneling spectroscopy. Along these lines, several experiments have been performed on high-T_c superconductors. The observation of the zero-bias conductance peaks (ZBCP) on Y Ba₂Cu₃O_{7 − δ}strongly suggests the d_{x² − y²}-wave pairing states of hole-doped high-T_c superconductors. On the other hand, the absence of ZBCP on (electron-doped)Nd_1.85Ce_0.15CuO_{4 − δ}indicates that the pair potential of this material is a nodeless state. In this paper, recent developments of tunneling spectroscopy for anisotropic superconductors are reviewed both on theoretical and experimental aspects.     

含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究

应用磁控溅射法以Ni-Al同时作为Cu与SiO₂/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO₂/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO₃(SRO)/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr_0.4Ti_0.6)O₃(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm²,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10^-4 A/cm²,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理. 关键词： Cu PZT 铁电电容器 Ni-Al     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Crystal structures of stage-n iodine-intercalated compounds IBi2nSr2nCanCu2nOx

The crystal structure of stage-3 iodine-intercalated superconducting IBi₆Sr₆Ca₃Cu₆O_x has been determined by transmission electron microscopy to belong to the space group Pma2 with lattice parameters a=5.4Å, B=5.4Å and C=49.4Å. Ioidine atoms intercalated between every three Bi---O bilayers expand the distance between the Bi---O layers by 3.6Å and alter the atomic stacking across Bi---O layers from the staggered configuration characteristic of host superconducting Bi₂Sr₂CaCu₂O_x to an aligned configuration characteristic of stage-1 iodine-intercalated superconducting IBi₂Sr₂CaCu₂O_x. Higher-stage intercalation has also been observed as stacking faults which predominantly contain both stage-2 and stage-3 phases. The space groups and c-axis dimensions of the higher-stage phases have been deduced to be Pma2 with c=3.6+15.3n Å when stage number n is odd, and Bbmb with c=2(3.6+15.3n) Å when n is even.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Fluorination of perovskite-related phases of composition La1−xSrxFe1−yCoyO3−δ

We report here on the fluorination of the perovskite-related phases La_1−xSr_xFe_1−yCo_yO_3−δ. The introduction of fluorine in place of oxygen is achieved through a low-temperature (400 °C) reaction with poly(vinylidene fluoride). X-ray powder diffraction data show that in all cases the fluorination leads to an expansion in the unit cell, which is consistent with partial replacement of oxygen by fluorine and consequent reduction in the oxidation state of iron and/or cobalt. This reduction in oxidation state is confirmed by X-ray absorption- and Mössbauer-spectroscopy. The Mössbauer spectra show complex magnetically split hyperfine patterns for the fluorinated samples, reflecting the interactions between Fe³⁺ ions, which are not possible in oxides containing Fe⁴⁺.     

X-ray diffraction of the smectic phases of N-(p-n-heptyloxybenzylidene)-p′-n-pentylaniline

Using X-ray diffraction the various smectic phases of N-($\text{p}$-$\text{n}$-heptyloxybenzylidene)-$\text{p}$′-$\text{n}$-pentylaniline can be classified (with increasing temperature) as S_H, S_B, S_C and S_A, respectively. The long molecular axes are probably tilted with respect to the normal to the layers in the S_A, S_C and S_H phases, and perpendicular to the layers in the S_B phase.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Analysis of the B′3Σu− → B3Πg (0,0) emission band of molecular nitrogen

The (0,0) band of the $\text{B′}\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{?}}\text{→ B}{}^3\text{Π}{}_{\mathrm{g}}$ emission (Infrared Afterglow) system of molecular nitrogen has been recorded with a resolution of 0.046 cm^?1 and a line position accuracy of 0.007 cm^?1. Six hundred and seventy-two lines are tabulated into a line list for the 1.53 μm (low-resolution) emission feature. Of these, 482 are assigned as members of the 27 branches of the B′ → B transition, while 150 are identified with the 1PG (3,6) band. Molecular constants for the v = 0 levels of the $\text{B′}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{?}}$ and B³Π_g states have been computed and tabulated.     

Formulas for An- and Bn-solutions of WDVV equations

The simplest non-trivial solutions of WDVV equations are A_n-and B_n-potentials, which describe metrics of Saito on spaces of versal deformation of A_n-and B_n-singularities. These are some polynomials, which were known for n≤4. In this paper, we find the potentials for all A_n-and B_n-singularities. We give a recurrence formula for coefficients of KP and n-KdV hierarchy.     

Velopharyngeal aerodynamics of /m/ and /p/ in tracheoesophageal speech

The purpose of this study was to compare oral pressure (P_o), nasal airflow (V_n), and velopharyngeal (VP) orifice area estimates from 12 tracheoesophageal (TE) and 12 laryngeal speakers as they produced /p/ and /m/ in syllable series. The findings were as follows: (1) TE speakers produced greater P_o than the laryngeal speakers; (2) for /p/, TE speakers generated V_n, and VP orifice area estimates comparable with, or less than, the laryngeal speakers; and (3) for /m/, TE speakers had V_n and VP orifice area estimates greater than the laryngeal speakers. The elevated P_o could be the result of several factors such as high source driving pressures and vocal tract volume changes postlaryngectomy. Attempts at more precise articulation, and subsequently less coarticulation, by the TE speakers may explain the V_n and VP orifice area estimates for /p/ and /m/. TE speakers may be limiting the oral-nasal cavity coupling for /p/ (smaller VP gap, less V_n) in an attempt to produce a very precise oral /p/. For /m/, TE speakers may be attempting to overtly mark the consonant as a nasal (greater V_n, larger VP gap). Further studies are needed to confirm/refute the explanations postulated here regarding the VP aerodynamic differences that were identified.