Forward light reflection from a moving inhomogeneity

The reflection of monochromatic and quasi-monochromatic pulsed light incident on a moving inhomogeneity in the optical characteristics of a medium having plasma-type dispersion has been analyzed. The velocity V of the inhomogeneity, induced in the medium by an intense laser pulse, has been changed by varying its carrier frequency. It has been shown that the usual back-reflection mode, when the reflected radiation pulse moves in the direction opposite the direction of incident radiation, is implemented only if the velocity V is less than the critical value V _min, which depends on the carrier frequency of the incident radiation pulse. It has been found that reflected radiation moves in the same direction as the incident radiation in a certain range of the velocity V _min < V < V _max (forward reflection). In this case, the reflected radiation pulse begins to lag behind a fast-moving inhomogeneity. When V _max < V < c, where c is the speed of light in vacuum, the group velocity of the incident radiation pulse is less than the speed of inhomogeneity, and there is no reflection. Analytical treatment is supported by numerical simulation.     

Changes produced in etching parameters of CR-39 by high-dose pre- and post-γ irradiation

The effect of post- and pre-high doses of γ–radiation in CR-39 plastic detectors has been studied in the dose range of 3×10¹?10⁶ Gy. Some properties like bulk-etch rate (V _B), track-etch rate (V _T), sensitivity (V _T/V _B) and efficiency have been found out for different gamma doses from a ⁶⁰Co source in CR-39. It is found that V _B and V _T remain almost invariant up to gamma doses of 10⁴ Gy. Then they start increasing slowly till 10⁵ Gy. Between 10⁵ Gy and 10⁶ Gy there is a sharp increase of V _B and V _T values for pre- and post-gamma exposed samples. The present data are compared with the previous literature.     

Positivity of energy in Abelian principal bundles over spacetime

Five-dimensional classical unified field theories may be described in terms of the geometry of a five-dimensional Lorentz space V ₅.This space may be considered as a principal bundle over spacetime V ₄with metric g _ij and gauge group U(1). It has been shown that when V ₄is asymptotically flat, the total energy momentum vector of V ₅is nonspacelike, and that the gravitational mass of V ₄has a lower bound. These results obtain when V ₅is replaced by a Lorentzian space V _N ,a principal bundle over an asymptotically flat V ₄with an Abelian group G as its gauge group.     

Relationship between torsional frequency and potential barrier height forAB n type molecular system

A relationship between the torsional frequency (v ₁₀) and the potential barrier (V _n) has been determined forAB _n type molecular system havingn-fold symmetry axis. It is found thatv ₁₀ varies prominently asV _n ^1/2 ,V _n andV _n ² in certain ranges. TheV _n value computed fromv ₁₀ andI* _r has been compared with that obtained from other experimental data for someAB _n units in different molecular-crystalline systems. Although there is in general a good agreement, in some cases the values differ significantly, perhaps due to the erroneous assignment of torsional mode and/or the large errors in theV _n value obtained from other experimental data.     

Cover Picture: Contrib. Plasma Phys. 9/2015

Effect of DC bias on the spatio‐temporal distribution of the electron density for L = 25 mm, V_pp = 150 V at p = 10 Pa with V_DC = 0 V. The color scales are given in units of 10⁹ cm^–3. (Figure 2b of the paper by N.Kh. Bastykova et al.)     

Vibrational studies of cyclopentane : Effect of 10-fold barrier to pseudorotation

A computer program has been used to determine the effects of 10-fold potential energy (V₁₀) and kinetic energy (B₁₀) terms on the pseudorotational energy levels of cyclopentane. The magnitudes of the calculated perturbations on the spectra have been evaluated, and the values of V₁₀ and B₁₀ are shown to be less than 20 and 0.2 cm⁻¹, respectively.     

Field Effect in the Linear and Nonlinear Conductivity of the Layered Quasi-One-Dimensional Semiconductor TiS3

Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS₃ have been fabricated. The dependences of the conductivity σ on the gate voltage V_g, as well as the current-voltage characteristics of whiskers (“source-drain”) at different V_g values, have been measured in the temperature range of 4.2-300 K. As the temperature decreases, the sensitivity of the conductivity to the gate voltage, α ≡ 1/σdσ/dV_g, increases in the range from 300 to 80 K and decreases sharply below 80 K, where the nonlinear conductivity begins to depend on V_g. The results can be explained by the formation of an electronic crystal at low temperatures.

     

Activation volumes of hydrolyses of maltose and maltotriose over an immobilized glucoamylase catalyst

Abstract

Initial rates of hydrolysis of maltose and maltotriose over an immobilized glucoamylase have been measured up to 127 MPa at 25±0.1°C. The observed rates have been analyzed showing the reaction pathways of both hydrolyses to be E+S?ES*?ES7ast;E+P, where E, S, P, ES*, and ES denote the enzyme, the substrate, the product, a substrate-subsite complex, and a substrate-active site complex, respectively. The apparent maximum rate r^mand the apparent Michaelis constant K^m as well as their respective pressure dependences in terms of the apparent activation volume Δ V_app ^# and the apparent volume of reaction Δ V_app have been evaluated. Small absolute values of Δ V_app ^num; and Δ V_app for both reactions have been discussed on the basis of the reaction mechanism.     

超薄栅超短沟LDD nMOSFET中栅电压对栅致漏极泄漏电流影响研究

本文研究了90nm CMOS工艺下栅氧化层厚度为1.4 nm沟道长度为100 nm的轻掺杂漏(LDD)nMOSFET栅电压V_G对栅致漏极泄漏 (GIDL)电流I_d的影响,发现不同V_G下ln (I_d/(V_DG-1.2))-1/(V_DG-1.2)曲线相比大尺寸厚栅器件时发生了分裂现象. 通过比较V_G变化下ln(I_d/(V_DG-1.2))的差值,得出V_G与这种分裂现象之间的作用机理,分裂现象的产生归因于V_G的改变影响了GIDL电流横向空穴隧穿部分所致. 随着|V_G|的变小,ln(I_d/(V_DG-1.2))曲线的斜率的绝对值变小.进一步发现不同V_G对应的ln (I_d/(V_DG-1.2))曲线的斜率c及截距d与V_G呈线性关系,c,d曲线的斜率分别为3.09和-0.77. c与d定量的体现了超薄栅超短沟器件中V_G对GIDL电流的影响,基于此,提出了一个引入V_G 影响的新GIDL电流关系式.     

Raman spectrum of vanadium pentoxide from density‐functional perturbation theory

We present ab initio calculation within the framework of the density‐functional theory (DFT) on band structure and vibrational properties of bulk V₂O₅. The structure of V₂O₅ comes from optimization of the experimental data with lattice parameters fixed. The band structure of the optimized structure has been calculated, and the result fits the experimental data very well and also gives similar results as those calculated by other methods. The phonon eigenwavenumbers of the Γ‐ point of V₂O₅ bulk have been calculated ab initio in density‐functional perturbation theory (DFPT). The calculated vibrational wavenumbers are in good agreement with observed infrared and Raman wavenumbers, and the predictive full phonon dispersion of bulk V₂O₅ has also been obtained. Further we calculated the Raman spectrum of vanadium pentoxide (V₂O₅) powder sample using the obtained Raman susceptibility. Calculated and measured intensities show overall good agreement. Copyright © 2008 John Wiley & Sons, Ltd.     

High-temperature heat capacity of oxides of the CuO–V2O5 system

CuV₂O₆ and Cu₂V₂O₇ compounds have been produced from initial components CuO and V₂O₅ by solid-phase synthesis. The high-temperature heat capacity of the oxide compounds has been measured using differential scanning calorimetry. The thermodynamic properties (the enthalpy change, the entropy change, and the reduced Gibbs energy) have been calculated using experimental dependences C _P = f(T). It is found that there is a correlation between the specific heat capacity and the composition of oxides of the CuO–V₂O₅ system.

     

Integral equation theory of the exchange potential,HOMO–LUMO properties,and sum rules for the exchange-correlation force

Recently, a formally exact integral equation for the exchange potential V _x(r) has been presented by the authors. In the admittedly simplistic limit in which Slater–Kohn–Sham and Hartree–Fock determinants become equal, this integral equation reduces to that given by Della Sala and Görling. Here, a proposal is made to relate, but now approximately, the formally exact equation for V _x(r) to HOMO–LUMO properties. The addition of a correlation contribution V _c(r) to V _x(r), the sum being the exchange-correlation potential V _xc(r), is finally considered, some exact properties and especially sum rules for the force ??V _xc/?r being the focus.     

Calibration of different plastic track detectors using accelerated heavy ions

Measurements of the dependence of track etch rate on the energy-loss of different ions have been presented. In this method, ₁₈ ⁴⁰ Ar, ₁₀ ²² Ne, ₈ ¹⁶ O and ₆ ¹² C-ions of different energies are used as energetic heavy ions for track formation in the detectors. The bulk etch rate and track etch rate are measured for different temperatures and hence the activation energies are determined. The variation ofV =V _t /V _b along the trajectory of the track has been shown for different temperatures. The maximum etched track length is compared with the theoretical range as well as with the range reported earlier. The experimental results indicate the absence of a well-defined threshold in the plastics studied.     

Oxygen vacancy induced ferromagnetism in rutile TiO2–x

First‐principles LDA + U calculations have been performed to study the effects of oxygen vacancies (V_O) on the electronic structure and magnetism in undoped rutile TiO_2–x . Instead of treated as an adjustive parameter, the value of U was determined by constrained‐density‐functional calculations. The calculated electronic structure reveals that the valence electrons released by V_O would occupy mainly the neighboring Ti:3d orbital which then becomes spin‐polarized due to intra‐atomic exchange interaction, thereby giving rise to the half‐metallic ferromagnetism. The magnetization induced by V_O in rutile TiO_2–x is almost proportional to the V_O concentration (x) for x > 0.0625, and becomes 0 for x ≤ 0.0417. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study

Two-Dimensional Angular Correlation of positron Annihilation Radiation (2D-ACAR) experiments have been performed on n-type GaAs. By combining these results with those from positron lifetime experiments, the momentum distribution of the arsenic vacancy in its neutral (V _aAs ⁰ ) and negative (V _As ^– ) charge states have been extracted. These distributions were all normalized to the respective positron lifetime that characterizes them. The first thing to be noticed is that the momentum distributions of the vacancies, as seen by the positron, are fairly isotropic and structureless. The distribution forV _As ⁰ is more peaked than that ofV _As ^– while the latter is more intense in the large momentum regions of the spectra. From this, it can be inferred that VA. has a smaller open volume thanV _As ⁰ A closer look at the momentum distribution of the vacancies reveals that they are not entirely isotropic, but, in fact, have a bulk-like component. Finally, the experimental results for bulk GaAs andV _As ^– compare well in a qualitative manner with the momentum distributions that result from an ab-initio molecular dynamics calculation.     

High-temperature heat capacity of CdO–V2O5 oxides

Vanadates Cd₂V₂O₇ and CdV₂O₆ have been prepared from CdO и V₂O₅ by three-phase synthesis with subsequent burning at 823–1073 K and 823–853 K, respectively. The molar heat capacity of these oxide compounds has been measured by differential scanning calorimetry. The enthalpy change, the entropy change, and the reduced Gibbs energy are calculated using the experimental dependences C _p = f(T). It is shown that there is a correlation between the specific heat capacity and the composition of CdO–V₂O₅ oxide system.

     

Extraction of the CKM matrix element V<Subscript>us</Subscript> from the hyperon semileptonic decays

The chiral constituent quark model with configuration mixing ( c \chi CQM _config , which is successful in explaining the weak vector and axial-vector form factors for the strangeness-changing as well as strangeness-nonchanging hyperon semileptonic decays at Q ² = 0 , has been extended to determine the CKM matrix element V _us for the strangeness-changing decays. The implications of the effect of the SU(3) symmetry breaking, Q²-dependence and radiative corrections on the form factors and V _us have also been investigated. It is found that the results with SU(3) symmetry breaking show considerable improvement over the SU(3) symmetric results when compared with the existing experimental data. The inclusion of the Q²-dependence and radiative corrections in form factors have only a small effect on the prediction of V _us as is expected from the theory.     

p型K:ZnO导电机理的第一性原理研究

基于密度泛函理论,利用局域密度近似的第一性原理平面波赝势方法,对掺K以及含有氢填隙(H_i)、氧空位(V_O)、锌填隙(Zn_i)和锌空位(V_Zn)的K:ZnO电子结构分别进行了研究.结果表明,1) 单独掺K可引入浅受主,但系统总能增高;2) K与H共掺可降低系统总能,提升稳定性;3) V_O在K+H:ZnO中的形成比Zn_i困难得多,二者都是 关键词： 氧化锌 p型 第一性原理 电子结构     

Fermilab top mass and modified Fritzsch mass matrices

Fritzsch like mass matrices with non-zero 22-elements both in U sector and D sector have been investigated in the context of latest data regardingm _t ^phys , |V _ub|, |V _cb|, |V _td| and |V _ts|. Unlike several other phenomenological models, the present model not only accommodates the value ofm _t ^phys in the range 150–240 GeV, encompassing the CDF and D0 values, but is also able to reproduce |V _cb| ≊0.040 and |V _ub/V_cb| = 0.08±0.02 and |V _td| is predicted to lie in the range 0.005–0.014. Further, the angles of the unitarity triangle, related to the CP-violating asymmetries, are calculated to be in the ranges −1.0⩽sin2α⩽−0.1, 0.6 ⩽sin2α⩽1.0 and 0.48⩽sin2β⩽0.56, which are in agreement with other recent calculations.     

AlGaN/GaN场板结构高电子迁移率晶体管的场板尺寸优化分析

对不同场板尺寸的AlGaN/GaN 场板结构高电子迁移率晶体管进行了研究,建立简化模型分析场板长度对沟道电场分布的影响.结果表明,调整钝化层厚度和场板长度都可以调制沟道电场的分布形状,当场板长度较小时,随着长度的增大器件击穿电压随之增加,而当长度增大到一定程度后器件击穿电压不再增加.通过优化场板长度,器件击穿电压提高了64%,且实验结果与模拟结果相符. 关键词： AlGaN/GaN 击穿电压 场板长度