去除铝基板的大功率LED热分析

提出一种大功率LED免铝基板封装方式,采用ANSYS有限元热分析软件对传统的铝基板封装和免铝基板封装的LED进行模拟对比分析。模拟结果表明:两种封装结构的LED,其最高温度均出现在LED芯片处;对于单颗功率1 W、3颗功率1 W和单颗功率3 W的器件,由于有效地简化了散热通道、大幅度降低了总热阻,采用免铝基板结构的最高温度分别降低了6.436,9.468,19.309 ℃。传统的铝基板封装即使选用热导率高达200 W/(m·K)的基板,其散热效果依旧略逊于免铝基板封装结构,且随着LED功率的增大,免铝基板的新型封装结构散热优势更加明显。本文的研究为解决大功率LED的散热问题和光色稳定性问题提供了一种新途径。     

High-power laser diodes of the spectral region of 808 nm and 980 nm

A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the C-mount. The maximum achievable power of laser diodes with a stripe contact width of 150 µm in the cw lasing mode was 25 W at a temperature of 20 °C.     

小型平板蒸汽腔的实验研究

平板蒸汽腔的加工工艺一直都有待改进,其工艺的质量直接影响着工作性能.本文基于平板蒸汽腔的工作原理,设计、加工了一种小型平板蒸汽腔,并进行了实验研究.文中介绍了其工作原理,加工工艺以及实验结果.结果表明:该小型平板蒸汽腔具有较好的工作性能,其厚度为5 mm,当输入热流为22.1 W时,平板蒸汽腔的热阻低至0.01°C/W...     

Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐κ dielectric aluminum oxide (Al₂O₃) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermal Resistance Measurement across a Wick Structure Using a Novel Thermosyphon Test Chamber

A novel system is developed for measuring the thermal resistance across thin layers of sintered copper wicks of varying porosity. Wicks to be tested are integrated into a passive vertical thermosyphon system, and the resistance is measured for a series of input power levels. The wicks are sintered to a thermally conducting pedestal above a pool of deionized water and heated from below. The apparent thermal resistance across the wick (from the pedestal/wick interface to the vapor space) under the evaporative operating conditions encountered in heat pipes is measured using thermocouples. The apparent thermal resistance across the wick is measured to be as low as 0.01°C/W, corresponding to an evaporative heat transfer coefficient of greater than 128,000 W/m²K.     

大功率GaN基发光二极管的电流扩展效应及电极结构优化研究

定性分析了GaN基LED的电流扩展效应,发现电流密度和电流横向扩展的有效长度对电流均匀扩展有很大影响.基于此,对GaN基大功率LED提出了优化的电极结构,以减缓电流拥挤效应,降低器件串联电阻.通过用红外热像仪测量器件表面的温度分布,发现具有优化的环形插指电极结构的GaN基大功率LED表面温度分布比较均匀,证明芯片接触处电流扩展均匀,局部电流密度降低,减小了焦耳热的产生,增强了器件的可靠性. 关键词： 氮化镓 发光二极管 电流扩展 电极结构优化     

GaN基大功率白光LED的高温老化特性

对大功率GaN基白光LED在85℃下进行了高温加速老化实验.经6500 h的老化,样品光通量退化幅度为28％ ～33％.样品的Ⅰ-V特性变化表明其串联电阻和反向漏电流不断增大,原因可归结为芯片欧姆接触的退化及芯片材料中缺陷密度的提高.样品的热特性变化显示出各结构层热阻均明显增大,这是由散热通道上各层材料的老化及焊料层出...     

大功率GaN基发光二极管的电流扩展效应及电极结构优化研究

定性分析了GaN基LED的电流扩展效应，发现电流密度和电流横向扩展的有效长度对电流均匀扩展有很大影响.基于此，对GaN基大功率LED提出了优化的电极结构，以减缓电流拥挤效应，降低器件串联电阻.通过用红外热像仪测量器件表面的温度分布，发现具有优化的环形插指电极结构的GaN基大功率LED表面温度分布比较均匀，证明芯片接触处电流扩展均匀，局部电流密度降低，减小了焦耳热的产生，增强了器件的可靠性.     

大功率LED灯珠与散热器直焊结构散热效果分析

散热是制约大功率LED发展的瓶颈,为了更好地解决散热问题,采用新型冷喷涂技术,在铝合金散热器表面喷涂铜层,实现了LED灯珠与散热器的直焊,取代了目前使用导热硅胶等热界面材料压接的方式,有效地消除了压接产生的接触热阻,显著改善了散热效果。通过建立LED灯具的三维模型,采用CAE软件模拟和实验两种方法验证了LED灯具直焊结构的散热效果明显优于压接结构,并且随着LED输入功率的增大,直焊结构的散热优势更加显著。     

平板蒸汽腔与微热管阵列组合式传热装置

本文对一种平板式蒸汽腔(均温板)与微热管阵列组合式换热装置进行了传热特性的研究,并将其用于大功率LED的散热.这种组合式换热装置既具有均温板的超高临界热流密度与全向传热的特性,同时具备微热管阵列远距离热输运的优良特性,是解决诸多高热流及其它极端条件下的散热,尤其是被动散热问题的有效方式.     

替代100W白炽灯的新型12W LED球泡灯的散热性能研究

基于冷喷涂技术,提出了一种替代传统100 W白炽灯的新型12 W LED球泡灯,其散热器由纯铝板裁剪和弯折而成。在分析铜基板内部结构基础上,借助ANSYS软件模拟不同覆铜层厚度和不同形状散热器的球泡灯温度场,获得了具有最低芯片结温的LED球泡灯。研究结果表明,铜基板厚度一定时,芯片结温随覆铜层厚度的增加而降低。选择纯铝质散热器和增加覆铜层厚度可使LED球泡灯的结温降低为71.25 ℃,低于芯片安全温度85 ℃,满足散热和照明习惯要求。     

InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy

Low coherence multiple-quantum well edge-emitting light-emitting diodes were obtained using selective-area metalorganic vapor-phase epitaxial growth, which utilized growth rate enhancement on an open stripe region between mask stripes. An optical absorption region, which was controlled by selective-area growth, was introduced to suppress optical feedback. At a driving current of 100 mA and an ambient temperature of 25°C, a power of 55 μW was coupled into a single-mode fiber, and a broad spectrum without spectral ripple was observed. Low coherence characteristics and very small temperature dependence were obtained in the temperature range from -40°C to 85°C. The modulation bandwidth was 210 MHz at a bias current of 100 mA.     

大功率LED的电流老化特性分析

基于一体化封装技术,先将铝基板进行硬质阳极氧化处理使其绝缘,后将蓝光LED芯片直接封装到铝基板上,分别制成大功率白光和蓝光LED,其中白光LED由蓝光芯片涂覆YAG∶Ce荧光粉制成。将白光和蓝光LED分别用500 mA和700 mA电流加速老化1 000 h,平均每间隔24 h测试其各种光学参数,对比蓝光LED与白光LED的衰减情况。白光LED的光通量衰减比蓝光严重,但白光光功率的衰减比蓝光慢。LED的衰减分为两个阶段:第一阶段芯片与荧光粉同时衰减;第二阶段主要是芯片的衰减,荧光粉衰减较慢。     

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes(LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide(InGaAlP)-based thin-film surface-mounted device(SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum(Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster(thermal transient tester) and TeraL ED(thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.     

Thermal Performance of a Capillary Pumped Loop for Automotive Cooling

The design and test results for a capillary pumped loop (CPL) for thermal management of up to 210 W at the source and heat transfer over a distance of 1 m are discussed. The design configuration of the CPL evaporator consists of an internally grooved aluminum evaporator, 31.70-mm outer diameter and 500-mm long, fitted with a porous ultra-high molecular weight polyethylene wick, 8- to 15-μm pore radius, and 38% porous volume. Heat was transferred using a stainless steel tube of 4.5-mm internal diameter for vapor and liquid lines. High-grade acetone (99.99% pure) was used as the heat transfer fluid inside the loop. In the tests, thermal characteristics of the CPL were specifically studied with respect to the temperature control capability using an active thermal device on the reservoir and to the start-up process through pressure priming of the capillary evaporator. The loop was able to start-up successfully at both low and high heat loads, although proper priming of the wick structure before start-up was necessary to attain low evaporator temperatures during steady-state operation. While maintaining constant reservoir temperature through active means, the loop was able to control evaporator temperature within 55 ± 3°C, even with changing input heat from 30 to 210 W. Total thermal resistance from the evaporator surface to the surroundings was 0.19° to 1.15° C/W with the minimum value achieved at the maximum heat load of 210 W. This study is intended to illustrate the thermal potential of the CPL as an effective temperature control device in automotive applications.     

Two new designs of lamp-type piezoelectric metamaterials for active wave propagation control

A major limitation of current metamaterials is that they control the wave propagation depending on their structure. Active metamaterials in this paper are designed whose physical structure is fixed, yet the position where they control the wave propagation can be changed by piezoelectric conditions. Two kinds of lamp-type piezoelectric metamaterials were assembled from an aluminum base, rubber plate and steel column, the piezoelectric patches were attached on both sides of the steel column, which can change the equivalent elastic modulus of the whole structure when the pair of patches are accessed by an LC circuit. The equivalent elastic modulus becomes zero or negative when the frequency of the circuit varies between 29,000 Hz and 30,000 Hz, in this case the two kinds of lamp-type piezoelectric metamaterials behave as a wave localization and a wave guide, respectively. The advantage of the lamp-type piezoelectric metamaterials is that we can control the wave propagation actively, as long as we change the position of the piezoelectric patches or choose the kind of lamp-type piezoelectric metamaterial. This is more flexible than a traditional passive metamaterial and provides a new way for us to design some acoustic equipment, such as acoustic cloaking, an acoustic black hole, filter or wave guide.     

Temperature dependence of the optical absorption in a bismuth titanium oxide crystal doped by aluminum

Results of experimental investigations into the temperature dependences of the absorption of optical narrow-band quasi-monochromatic radiation of semiconductor light-emitting diodes in the visible range of the spectrum in a bismuth titanium oxide crystal doped by aluminum are presented. It is demonstrated that experimental dependences for temperatures 27–70 °C can be described by the model of defects formed by donor-trap pairs that admit tunnel electron transitions between donor and trapping centers in each pair. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 12–16, June, 2008.     

MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence

The technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ～2.2 eV.     

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm². Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22–40) mA and (0.2–0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90°C under power of 5 mW. After operating under 90°C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25°C and the operation currents at 5 mW (at 25°C) are (2–3) mA and (3–5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50°C and 2.5 mW. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998.     

Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into <Emphasis Type="Italic">n</Emphasis>-Si

The effect of the temperature of postimplantation annealing on the electroluminescence and the electrophysical and structural properties of light-emitting diodes fabricated by the implantation of boron ions into n-Si with a resistivity of 0.5 and 500 Ω cm is studied. All spectra contain strong electroluminescence (EL) peaks associated with band-to-band radiative transitions. An increase in the annealing temperature from 700 to 1100°C is accompanied by a monotonic increase in the quantum efficiency for the dominating EL peak and in the effective minority-carrier lifetime in the base of the light-emitting diodes and by the transformation of extended structural defects. Analysis of the experimental data shows that the extended structural defects formed are most likely to affect the EL properties via the formation or gettering of the radiative or nonradiative recombination centers rather than via preventing the removal of charge carriers to nonradiative recombination centers. The maximum internal quantum efficiency is reached after annealing at 1100°C (where extended structural defects are absent) and is estimated to be 0.4% at 300 K.