Growth and transport properties of CaFeAsF_(1-x) single crystals

Using self-flux method,we have successfully grown the parent phase of the single crystals of CaFeAsF1-x.The X-ray di?raction indicates good crystallinity.In-plane resistivity shows a bad metallic behavior with a sharp drop of resistivity at about T SDW=119K.This anomaly is associated with the possible spin density wave(SDW)order.Interestingly near T SDW,the resistivity exhibits a cusp-like feature,which may be understood as the strong coupling effect between the electrons and the antiferromagnetic(AF)spin fluctuations.A reduction of fluorine or application of a high pressure will suppress the SDW feature and induce superconductivity.Hall effect measurements reveal a positive Hall coefficient below T SDW indicating a dominant role of the hole-like charge carriers in the parent phase.Strong magnetoresistance has been observed below T SDW suggesting multiple conduction channels of the charge carriers.     

Magnetism and Hall effect of the Heusler alloy Co2ZrSn synthesized by melt-spinning process

Magnetization and Hall resistivity have been measured for the Heusler alloy Co₂ZrSn synthesized by the melt-spinning process. The temperature dependence of magnetization follows the spin-wave theory at a low temperature. Abnormal behaviors are observed both in resistance and Hall effect below 8 K. The present Hall resistivity measurement shows that the anomalous Hall effects coexist with normal Hall effects. The negative value of normal Hall coefficient over the whole temperature range reveals that the major charge carriers are electrons. The anomalous Hall coefficient is proportional to the zero-field resistivity, suggesting that magnetic skew scattering is the dominant mechanism in the ferromagnetic regime. The reason for the abnormity below 8 K during transport is discussed.     

Thermal collapse of spin polarization in half-metallic ferromagnets

We propose two novel approaches to study the temperature dependence of the magnetization and the spin polarization at the Fermi level in magnetic compounds, and apply them to half-metallic ferromagnets. We reveal a new mechanism, where the hybridization of states forming the half-metallic gap depends on thermal spin fluctuations and the polarization can drop abruptly at temperatures much lower than the Curie point. We verify this for NiMnSb by ab initio calculations. The thermal properties are studied by mapping ab initio results to an extended Heisenberg model which includes longitudinal fluctuations and is solved by a Monte Carlo method.     

Sb系half-Heusler合金磁性及电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算了Sb系half-Heusler合金XYSb(X=Ni,Pd,Pt;Y=Mn,Cr)的晶体结构、磁性及电子结构.计算结果表明,在平衡晶格常数下,合金NiMnSb为半金属,其他为金属.合金的总磁矩主要由Y元素自旋磁距贡献,随着元素X原子序数减小,费米能级移向自旋向下能带导带底;压缩使费米能级上移,远离Sb原子p能带,PtMnSb,PdMnSb与NiCrSb在压应力下可实现金属—磁性半金属转变. 关键词： 第一性原理 磁性 电子结构 金属—磁性半金属转变     

Magnetic properties of nanosized diluted magnetic semiconductors with band splitting

A continual model of nonuniform magnetism in thin films and wires made of a diluted magnetic semiconductor is considered with regard to the finite spin polarization and band splitting of carriers responsible for the indirect Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities. Spatial distributions (across the film thickness or along the wire radius) of magnetization and the concentrations of carriers with different spin orientations for different temperatures, as well as the temperature dependence of the average magnetization, are obtained as a solution to a nonlinear integral equation.     

Shubnikov-de Haas oscillations in SrTiO3/LaAlO3 interface

Quantum magnetic oscillations in SrTiO3/LaAlO3 interface are observed in the magnetoresistance. We study their frequency as a function of gate voltage and the evolution of their amplitude with temperature. The data are consistent with the Shubnikov-de Haas theory. The Hall resistivity ρ(xy) is nonlinear at low magnetic fields. ρ(xy) is fitted assuming multiple carrier contributions. We infer the density of the mobile charge carriers from the oscillations frequency and from Hall measurements. The comparison between these densities suggests multiple valley and spin degeneracy. The small amplitude of the oscillation is discussed in the framework of the multiple band scenario.     

Spin polarization induced by an electric field in the presence of weak localization effects

We evaluate the spin polarization (Edelstein or inverse spin galvanic effect) and the spin Hall current induced by an applied electric field by including the weak localization corrections for a two-dimensional electron gas. We show that the weak localization effects yield logarithmic corrections to both the spin polarization conductivity relating the spin polarization and the electric field and to the spin Hall angle relating the spin and charge currents. The renormalization of both the spin polarization conductivity and the spin Hall angle combine to produce a zero correction to the total spin Hall conductivity as required by an exact identity. Suggestions for the experimental observation of the effect are given.     

Reprint of : Spin polarization induced by an electric field in the presence of weak localization effects

We evaluate the spin polarization (Edelstein or inverse spin galvanic effect) and the spin Hall current induced by an applied electric field by including the weak localization corrections for a two-dimensional electron gas. We show that the weak localization effects yield logarithmic corrections to both the spin polarization conductivity relating the spin polarization and the electric field and to the spin Hall angle relating the spin and charge currents. The renormalization of both the spin polarization conductivity and the spin Hall angle combine to produce a zero correction to the total spin Hall conductivity as required by an exact identity. Suggestions for the experimental observation of the effect are given.     

Tunable anomalous Hall effect in a nonferromagnetic system

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.     

Impurity spin magnetization of thin Fe doped Au films

In order to probe the influence of the surface-induced anisotropy on the impurity spin magnetization, we measure the anomalous Hall effect in thin AuFe films at magnetic fields up to 15 T. The observed suppression of the anomalous Hall resistivity at low fields as well as the appearance of a minimum in the differential Hall resistivity at higher fields can be explained by our theoretical model, which takes into account the influence of a polycrystalline film structure on the surface-induced anisotropy. Our results imply that the apparent discrepancy between different experimental results for the size effects in dilute magnetic alloys can be linked to a different microstructure of the samples.     

Optically engineering the topological properties of a spin Hall insulator

Time-periodic perturbations can be used to engineer topological properties of matter by altering the Floquet band structure. This is demonstrated for the helical edge state of a spin Hall insulator in the presence of monochromatic circularly polarized light. The inherent spin structure of the edge state is influenced by the Zeeman coupling and not by the orbital effect. The photocurrent (and the magnetization along the edge) develops a finite, helicity-dependent expectation value and turns from dissipationless to dissipative with increasing radiation frequency, signalling a change in the topological properties. The connection with Thouless' charge pumping and nonequilibrium zitterbewegung is discussed, together with possible experiments.     

Transport effects in single-crystal La0.82Ca0.18MnO3

This paper reports experimental data on the temperature dependences of the electrical resistivity, magnetoresistance, thermopower, magnetothermopower, and normal and spontaneous Hall coefficients of the La_0.82Ca_0.18MnO₃ single crystal with a Curie temperature of 180 K. It is shown that, at low temperatures, electrons are the majority carriers. For T < 110 K, the electrical resistivity depends substantially on the position of the magnetization vector with respect to the crystallographic axes, which implies a significant role played by the spin-orbit interaction. For T > 137 K, holes are dominant. In the vicinity of the Curie temperature, electrical conduction is effected primarily by holes activated to the mobility edge. The local activation energy of the resistivity exhibits a critical behavior. The temperature dependence of the local activation energy is determined by spin correlation functions. For T > 240 K, the activation energy does not depend on temperature.     

Topological Hubbard model and its high-temperature quantum Hall effect

The quintessential two-dimensional lattice model that describes the competition between the kinetic energy of electrons and their short-range repulsive interactions is the repulsive Hubbard model. We study a time-reversal symmetric variant of the repulsive Hubbard model defined on a planar lattice: Whereas the interaction is unchanged, any fully occupied band supports a quantized spin Hall effect. We show that at 1/2 filling of this band, the ground state develops spontaneously and simultaneously Ising ferromagnetic long-range order and a quantized charge Hall effect when the interaction is sufficiently strong. We ponder on the possible practical applications, beyond metrology, that the quantized charge Hall effect might have if it could be realized at high temperatures and without external magnetic fields in strongly correlated materials.     

Theory of spin Hall effect: extension of the Drude model

An extension of the Drude model is proposed that accounts for the spin and spin-orbit interaction of charge carriers. Spin currents appear due to the combined action of the external electric field, crystal field, and scattering of charge carriers. The expression for the spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, the spin Hall conductivity sigma s and charge conductivity sigma c are related through sigma s=[2pi variant /(3mc2)]sigma2c with m being the bare electron mass. The theoretically computed value is in agreement with experiment.     

Spin-dependent electronic states of the ferromagnetic semimetal EuB6

The spin polarization of EuB6 has been measured by using Andreev reflection spectroscopy. Analyses of the conductance spectra of the EuB6/Pb junctions yield a spin polarization of about 56%. The results demonstrate that the ferromagnetic EuB6 is not half-metallic. Combined with the Hall effect and magnetoresistivity data, the results indicate a semimetallic band structure with a fully spin-polarized hole band and an unpolarized electron band. The values and the spread of the measured spin polarization are quantitatively consistent with the experimentally determined Fermi surface and carrier densities.     

Large topological Hall effect in a short-period helimagnet MnGe

We have observed an unconventional, likely topological, Hall effect over a wide temperature region in the magnetization process of a chiral-lattice helimagnet MnGe. The magnitude of the topological Hall resistivity is nearly temperature-independent below 70 K, which reflects the real-space fictitious magnetic field proportional to a geometric quantity (scalar spin chirality) of the underlying spin texture. From the neutron diffraction study, it is anticipated that a relatively short-period (3-6 nm) noncoplanar spin structure is stabilized from the proper screw state in a magnetic field to produce the largest topological Hall response among the B20-type (FeSi-type) chiral magnets.     

Spin Hall Magnetoresistance and Spin Nernst Magnetothermopower in a Rashba System: Role of the Inverse Spin Galvanic Effect

In ferromagnet/normal‐metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current‐induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two‐dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current‐induced spin polarization on the boundary conditions, and the spin Hall magnetoresistance is shown to acquire a non‐trivial and asymmetric dependence on the magnetization direction of the ferromagnet.     

Z2 topological order and the quantum spin Hall effect

The quantum spin Hall (QSH) phase is a time reversal invariant electronic state with a bulk electronic band gap that supports the transport of charge and spin in gapless edge states. We show that this phase is associated with a novel Z2 topological invariant, which distinguishes it from an ordinary insulator. The Z2 classification, which is defined for time reversal invariant Hamiltonians, is analogous to the Chern number classification of the quantum Hall effect. We establish the Z2 order of the QSH phase in the two band model of graphene and propose a generalization of the formalism applicable to multiband and interacting systems.     

Spin glass behaviour and extrinsic origin of magnetodielectric effect in non-multiferroic La(2)NiMnO(6) nanoparticles

We report magnetization, dielectric and dc transport properties of La(2)NiMnO(6) nanoparticles. Both dc and ac magnetization measurements indicated a metastable magnetic behaviour with random ferromagnetic and antiferromagnetic interactions below 110 K; critical slow-down, memory and rejuvenation properties signify the spin glass nature. The dc resistivity shows a semiconducting nature but the temperature dependent magnetoresistance (MR) shows a peak at the spin glass transition. The colossal dielectric property and its frequency dependence were interpreted using the Maxwell-Wagner (MW) interfacial polarization model. Impedance analysis along with magnetodielectric (MD) and magnetoresistance (MR) indicates that the observed MD originates from the combined effect of MR and MW interfacial polarization.     

Coherent photogalvanic valley Hall effect

The theory of the coherent photogalvanic valley Hall effect in two-dimensional systems with the Dirac spectrum of charge carriers is formulated. The study deals with a two-dimensional sample irradiated by two electromagnetic waves, at the fundamental and doubled frequencies. Both frequencies exceed the band gap of the material, whereas the wave with the fundamental frequency having circular polarization and a high intensity is taken into account in a nonperturbative manner. The wave at the doubled frequency is linearly polarized and the electrical conductivity of the two-dimensional system is calculated with respect to it. The effect under study manifests itself as the dc Hall current in the direction orthogonal to the electric field of the weak electromagnetic wave. It is assumed that, in equilibrium, the sample is in the insulating state with the completely occupied valence band and empty conduction band. The strong electromagnetic wave induces a nonequilibrium filling of the bands and the system passes to a strongly nonequilibrium steady state. The behavior of the Hall current in the case of nonequilibrium distribution functions is analyzed both including and disregarding the intraband relaxation and interband recombination.