Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Estimation of applicability of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in isotropic polycrystalline <Emphasis Type="Italic">p-</Emphasis>silicon

A condition is formulated for application of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in an isotropic silicon polycrystal, where holes are scattered both by a disordered system of potential barriers formed on crystallite surfaces and by a disordered lattice of silicon atoms characterized by local ordering. The total specific resistance of p-type isotropic polycrystalline silicon is estimated for the grain size d = 230 ?, temperature T = 300 K, and hole concentration p = (5.0 – 10.0) ⋅ 10¹⁹ cm⁻³. The calculated specific resistances of p-type polycrystalline silicon are compared with the experimental data.     

High-brightness terawatt KrF* (248 nm) system

19 W/cm² range with improved shot-to-shot energy stability. This system gives a resulting brightness of ∼3.3×10²¹ W cm^-2 sr^-1. Received: 5 November 1996/Revised version: 29 November 1996     

High-sensitivity detection of NO2 using a 740 nm semiconductor diode laser

 An AlGaAs diode laser was used to detect NO₂ absorption lines belonging to the (0 0 0)–(2 13 1) vibrational band, within the X˜² A ₁ electronic ground state, at 739 nm. A simple absorption spectrometer based on wavelength-modulation spectroscopy with second-harmonic detection was developed. The minimum detectable pressure of pure NO₂ was 0.1 μbar with 2 m absorption path-length, corresponding to an absorbance of 10^-6. High-sensitivity detection of NO₂ was also performed in the presence of N₂ and air at different total pressures: The effects on the detection limit of our apparatus were accurately investigated. The minimum NO₂ concentration at 500 mbar of air was measured to be 2 ppm. Received: 11 June 1996 / Revised version: 11 October 1996     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Estimation of the deformation-potential constant for <Emphasis Type="Italic">p</Emphasis>-type isotropic polycrystalline silicon through the deformation potential of a <Emphasis Type="Italic">p</Emphasis>-type silicon single crystal

A method of calculating the effective deformation-potential constant E ₁ for holes and longitudinal acoustic phonons in isotropic polycrystalline silicon is suggested. The deformation-potential constant E ₁ is estimated through the deformation potentials a, b, and d of the silicon single crystal. The procedure of averaging of the squared modulus of the hole and acoustic phonon interaction Hamiltonian written in the plane wave basis over the polycrystal ensemble provides the basis for calculation of the constant E ₁ . It is demonstrated that for T = 200–600 K, hole concentration p = (5.0–10.0)∙10¹⁹ cm^–3, and crystallite size d = 300–3000 ?, the deformationpotential constant E ₁ is independent of the hole concentration p, temperature T, and crystallite size d.     

Vacuum ultraviolet gain measurements in optically pumped LiYF4:Nd3+

 We present measurements of the net-induced gain on the 5d–4f transition at 186 nm in LiYF₄ : Nd³⁺ optically pumped by radiation from a molecular fluorine laser. It is found that for LiYF₄ : Nd³⁺, one of a series of potential continuously tunable VUV lasers, relatively strong excited-state absorption results in net-induced loss. The prospects for VUV laser operation being realised in other rare-earth-doped fluorides is discussed. Received: 4 March 1996/Revised version: 10 July 1996     

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdScO₃ films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I _on/I _off ratios of 10⁶–10⁸, and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm²/Vs for the conventional and 366 cm²/Vs for the strained silicon substrates were determined.     

Disorders produced during high-current and high-dose phosphorus ion implantation in silicon

Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×10¹⁶ions/cm²) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.