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1.
键合界面阻抗对VCSEL的电、热学特性的影响   总被引:1,自引:1,他引:0  
采用一电阻层来表征键合界面处的阻抗.通过求泊松方程、电流密度方程、载流子扩散方程以及有源层结压降方程自洽解的方法,计算了VCSEL的电势分布,进而求解热传导方程,得到VCSEL的温度分布.详细分析了键合界面阻抗对晶片键合结构垂直腔面发射激光器内部的电势分布、温度分布以及有源层中的注入电流密度、载流子浓度、结压降和温度沿径向分布的影响.  相似文献   

2.
亚毫安阈值的1.3μm垂直腔面发射激光器   总被引:1,自引:0,他引:1       下载免费PDF全文
劳燕锋  曹春芳  吴惠桢  曹萌  龚谦 《物理学报》2009,58(3):1954-1958
设计并研制了室温连续工作的单模13 μm垂直腔面发射激光器(VCSEL),阈值电流为051 mA,最高连续工作温度达到82℃,斜率效率为029 W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成13 μm VCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响. 关键词: 垂直腔面发射激光器 晶片直接键合 应变补偿多量子阱  相似文献   

3.
808nm大孔径垂直腔面发射激光器研究   总被引:2,自引:1,他引:1       下载免费PDF全文
垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词: 半导体激光器 垂直腔面发射激光器 高功率 大孔径  相似文献   

4.
吸收对垂直腔面发射激光器光学特性的影响   总被引:2,自引:2,他引:0  
采用光学传输矩阵方法,详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响. 结果表明,反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响,而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小. 随着反射镜以及键合界面的吸收增大,反射镜中心波长处的反射率逐渐减小,垂直腔面发射激光器的模式反射率变化则是先急剧减小,达到一个极小值,然后再逐渐增大,而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的. 此外,将有吸收的键合界面离有源区的距离远一些,有利于提高垂直腔面发射激光器模式处的光输出效率.  相似文献   

5.
高功率垂直腔面发射半导体激光器优化设计研究   总被引:3,自引:0,他引:3       下载免费PDF全文
与传统的端发射半导体激光器相比,垂直腔面发射半导体激光器(VCSEL)具有可单模输出,光束对称性好,可被高度聚焦,进入光纤的耦合效率极高和有利于大规模二维列阵等优 点.为了得到高功率的激光输出,除了要增大VCSEL的发射面积之外,关键的是要选择适 当的量子阱层数、有源区电流密度的均匀分布和良好的热管理等.本文详细研究和分析了高功率VCSEL有源区量子阱层数,有源区直径,材料的热导和电阻,电极间距等对VCSEL 器件性能的影响.通过优化参数,进行最佳设计,研制出了980 nm In0.2Ga0.8As/Ga 关键词: 垂直腔面发射激光器(VCSEL) 量子阱 高功率  相似文献   

6.
采用光学传输矩阵方法分析了厚度偏差对VCSEL的反射谱和反射相移产生的影响。结果表明,反射镜和VCSEL中各层厚度的偏大,将使反射镜的中心波长以及VCSEL的模式波长向长波方向移动,而反射镜和VCSEL中各层厚度的偏小,将使反射镜的中心波长以及VCSEL的模式波长向短波方向移动。将键合界面离有源区稍微远一些,有利于减小其厚度偏差对VCSEL的模式波长的影响。  相似文献   

7.
通过对影响垂直腔面发射激光器(vertical cavity surface emitting laser, VCSEL)的功率转换效率的因素进行理论分析,得出斜率效率是影响功率转换效率的主要因素的结论.为获得高功率转换效率,通过对有源区量子阱、P型和N型分布布拉格反射镜(DBR)等进行优化,设计出了905 nm VCSEL的外延结构并进行了高质量外延生长.成功制备出了不同氧化孔径的905 nm VCSEL器件,获得的最大斜率效率为1.12 W/A,最大转换效率为44.8%.此外,探究了氧化孔径对VCSEL的远场和光谱特性的影响.这种具有高功率转换效率的905 nm VCSEL器件为激光雷达的小型化、低成本化提供了良好的基础数据.  相似文献   

8.
垂直腔面发射激光器(VCSEL)已成为短距离数据通信传输系统的首选光源。热限制是VCSEL器件调制带宽进一步增加的一个主要的制约因素。本文基于有限元分析的方法对影响980 nm-VCSEL器件有源区温度的参数,如驱动电流、氧化孔径尺寸、氧化层材料等做了比较分析,还数值分析了二元系Ga As/Al As材料DBR用于高速低能耗VCSEL器件的优势,为绿色光子器件设计提供优化思路。  相似文献   

9.
利用金属有机物气相沉积技术(MOCVD)在(0001)蓝宝石衬底上生长了Ga N基垂直腔面发射激光器(VCSEL)的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成VCSEL,顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜(DBR)。在室温、紫外脉冲激光的泵浦条件下,观察到了VCSEL明显的激射现象,峰值波长位于447.7 nm,半高宽为0.11 nm,自发辐射因子约为6.0×10-2,阈值能量密度约为8.8 m J/cm2。在大幅度降低制作难度的情况下,得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性,有利于器件的产品化。  相似文献   

10.
结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构. 关键词: 量子点 垂直腔面发射激光器 微分增益 3 dB带宽  相似文献   

11.
为了研究复合结构掠入射板条放大器的热效应,采用在Nd:YVO4晶体抽运面上键合具有高热导率性能的蓝宝石的复合结构,并建立了相应的热力学模型,对激光介质的温度场分布、光程差(OPD)和热透镜效应进行了详细的理论分析,利用有限元分析软件COMSOL模拟了晶体内部的温度、应变、光程差(OPD)及热焦距的分布情况。结果表明,板条厚度为2 mm、键合层厚度1 mm、抽运功率60 W时,复合结构相对于单一结构最高温度下降了约50 K,晶体中的最大形变量降低超过了1/3,极大地降低了介质中的热效应。  相似文献   

12.
D. Buttard  C. Krieg 《Surface science》2006,600(22):4923-4930
X-ray reflectivity and atomic force microscopy are used to investigate silicon oxide ultra-thin films. Quantitative results are shown using a reflectivity simulation model based on kinematical X-ray theory. Changes in film thickness are discussed in relation to current density, voltage, charge and anodization time. The density and resistivity of silicon oxide are calculated and compared to that of thermal oxide. The electrical field existing in the layer during anodization is estimated. Surface roughness is also measured locally and averaged over the entire surface, producing a low value that meets microelectronic requirements. Thickness is carefully controlled. We show that ultra-thin silicon oxide films are of very high quality. Similar investigations are made on a twisted bonded silicon substrate obtained by the molecular bonding of two silicon wafers. It is shown that the silicon oxide is also of very good quality and can be used as a sacrificial silicon oxide in thinning down the upper silicon film. Controlled, accurate thinning is achieved down to a thickness of 10 nm, the level which is required for etching the dislocation network present at the bonding interface.  相似文献   

13.
在87Sr光晶格钟实验系统中,通过将自由运转的698 nm激光频率锁定在由超低膨胀系数的玻璃材料构成的超稳光学参考腔上,从而获得短期频率稳定性较好的超稳窄线宽激光.超稳光学参考腔的腔长稳定性决定了最终激光频率的稳定度.为了降低腔长对温度的敏感性,使激光频率具有更好的稳定度和更小的频率漂移,利用锶原子光晶格钟的钟跃迁谱线,测量了698 nm超稳窄线宽激光系统中超稳光学参考腔的零温漂点.通过对钟跃迁谱线中心频率随温度的变化曲线进行二阶多项式拟合,得到698 nm超稳窄线宽激光系统的零温漂点为30.63℃.利用锶原子光晶格钟的闭环锁定,测得零温漂点处698 nm超稳窄线宽激光系统的线性频率漂移率为0.15 Hz/s,频率不稳定度为1.6×10–15@3.744 s.  相似文献   

14.
We present an axisymmetric computational model to study the heating processes of gold nanoparticles, specifically nanorods, in aqueous medium by femtosecond laser pulses. We use a two-temperature model for the particle, a heat diffusion equation for the surrounding water to describe the heat transfer processes occurring in the system, and a thermal interface conductance to describe the coupling efficiency at the particle/water interface. We investigate the characteristic time scales of various fundamental processes, including lattice heating and thermal equilibration at the particle/surroundings interface, the effects of multiple laser pulses, and the influence of nanorod orientation relative to the beam polarization on energy absorption. Our results indicate that the thermal equilibration at the particle/water interface takes approximately 500 ps, while the electron-lattice coupling is achieved at approximately 50 ps when a 48×14 nm gold nanorod is heated to a maximum temperature of 1270 K with the application of a laser pulse having 4.70 J/m(2) average fluence. Irradiation by multiple pulses arriving at 12.5 ns time intervals (80 MHz repetition rate) causes a temperature increase of no more than 3 degrees during the first few pulses with no substantial changes during the subsequent pulses. We also analyze the degree of the nanorods' heating as a function of their orientation with respect to the polarization of the incident light. Lastly, it is shown that the temperature change of a nanorod can be modeled using its volume equivalent sphere for femtosecond laser heating within 5-15% accuracy.  相似文献   

15.
基于KTP键合晶体采用Hansch-Couillaud频率锁定技术实现了双波长外腔同时共振,理论和实验上分别研究了基于键合KTP晶体的HC频率锁定方案. 研究表明,与采用单KTP晶体的结果相比,采用键合KTP晶体进行HC锁频时,能将激光频率分别锁定到e1光或e2光的共振峰值. 实验中将环形腔腔模频率锁定到938nm激光器的输出频率上,1583nm激光器的输出频率锁定到环形腔腔模频率上,从而实现了三者之间的相位关联锁定. 关键词: 键合KTP晶体 Hansch-Couillaud锁频 双波长外腔共振  相似文献   

16.
Generation of a cavity-enhanced nondegenerate narrow-band photon pair source is a potential way to realize a perfect photonic quantum interface for a hybrid quantum network. However, to ensure the high quality of the photon source, the pump laser for the narrow-band photon source should be generated in a special way. Here, we experimentally generate the blue 453 nm laser with a sum frequency generation process in a periodically poled lithium niobate waveguide. A 13 mW laser at 453 nm can be achieved with a low-power 880 nm laser and 935 nm laser input, and the internal conversion efficiency is 21.6% after calculation. The frequency of a 453 nm laser is stabilized by locking two pump lasers on one ultrastable optical cavity. The single pass process without employing cavity enhancement can ensure a good robustness of the whole system.  相似文献   

17.
吴坚  H.D.Summers 《中国物理 B》2009,18(11):4912-4918
The intrinsic features involving a circularly symmetric beam profile with low divergence,planar geometry as well as the increasingly enhanced power of vertical-cavity surface-emitting lasers (VCSELs) have made the VCSEL a promising pump source in direct end bonding to a solid-state laser medium to form the minimized,on-wafer integrated laser system.This scheme will generate a surface contact pump configuration and thus additional end thermal coupling to the laser medium through the joint interface of both materials,apart from pump beam heating.This paper analytically models temperature distributions in both VCSEL and the laser medium from the end thermal coupling regarding surface contact pump configuration using a top-emitting VCSEL as the pump source for the first time.The analytical solutions are derived by introducing relative temperature and mean temperature expressions.The results show that the end contact heating by the VCSEL could lead to considerable temperature variations associated with thermal phase shift and thermal lensing in the laser medium.However,if the central temperature of the interface is increased by less than 20 K,the end contact heating does not have a significant thermal influence on the laser medium.In this case,the thermal effect should be dominated by pump beam heating.This work provides useful analytical results for further analysis of hybrid thermal effects on those lasers pumped by a direct VCSEL bond.  相似文献   

18.
徐洲龙  郑煜 《光子学报》2014,39(4):643-647
基于有限元理论对阵列光纤和波导芯片粘接情况进行了建模与仿真,分析了在温度变化下不同粘接区域厚度的热应力和微位移的产生和分布,结果表明粘接界面的边缘区域对温度变化最敏感.根据光弹效应定性分析了粘接区域的应力双折射,并利用光束传播法计算了由此微位移所导致的光功率损耗,结果表明若以附加损耗小于0.15 dB的标准考察,则必须要求粘胶厚度的理论值在16 μm以内.总结了温度变化和在相同条件下不同粘胶厚度对平面光波导封装性能的影响规律.  相似文献   

19.
$1\overline{1} 02$ ) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal expansion coefficients of GaAs and sapphire are close to each other, the bonded wafer pair is stable against thermal treatment and quenching in liquid nitrogen. During heating in different gas atmospheres, macroscopic interface bubbles and microscopic imperfections were formed within the bonding interface, which were analysed by transmission electron microscopy (TEM). These interface bubbles can be prevented by hydrophobic bonding in a hydrogen atmosphere. Received: 10 February 1997/Accepted: 17 February 1997  相似文献   

20.
《Composite Interfaces》2013,20(2):107-117
In this work, oxidation of silicon carbide particles (SiCp) at elevated temperature and its influence on the interface layer and thermal conductivity of SiCp/ZL101 composites prepared using pressure infiltration process were investigated respectively. It is found that initial temperature for the oxidation of SiCp is about 850?°C, and that the oxidation increment of SiCp and the thickness of SiO2 layer increase with the increase in pre-oxidation temperature and time, when the oxidized temperature exceeds 1100?°C, or the duration time exceeds 2?h at 1100?°C, a small amount of ablation will take place on the SiCp, as well as the oxidized layer has some loss. The formation of SiO2 layer can provide certain interface reactions with interface layers (3.1–6.36?μm), and the higher the thickness of SiO2 layer, the thicker the interface layer in SiCp/Al composites. However, the thickness of SiO2 layer is more than 5.9?μm, which is not benefit for the formation of interface layer. With the increase in the thickness of interface layer, thermal conductivity declines, but is not linear.  相似文献   

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