Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Neutron diffraction and IR spectroscopy on mechanically alloyed La-substituted PbWO4

Defect structures of the lanthanum-substituted PbWO₄ prepared by mechanical alloying (MA) were investigated by means of powder neutron diffraction and FT-IR, to compare with that of the oxide ion conductive sintered samples. Neutron diffraction revealed that Pb_1−xLa_xWO_4+x/2 prepared by MA possessed the lead site deficiency in the lattice. In addition, it was also found that occupation factors of the lead site were still smaller than the nominal value even for the mechanically alloyed Pb_1−xLa_2x/3WO₄. The vacancy formation at the lead site of the mechanically alloyed Pb_1−xLa_xWO_4+x/2 was also corroborated from the splitting of the absorption band around 800 cm⁻¹ ascribed to the W–O stretching vibration of WO₄ tetrahedron. At the end of this paper, the formation process of the lead site vacancy was discussed in the sintered Pb_1−xLa_xWO_4+x/2 during milling.     

Erbium in silicon–germanium quantum wells

Strained Si_1−xGe_x/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si_1−xGe_x/Si quantum wells and relaxed Si_1−xGe_x, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×10¹⁸ and 5×10¹⁸ cm⁻³ throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si_1−xGe_x/Si layers, but erbium-implanted samples containing Si_1−xGe_x exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si_1−xGe_x/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si_0.87Ge_0.13/Si structure at a drive current density of only 1.8 mA/cm².     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Infrared spectra and transport properties of Li-doped La214 system

The microstructure, charge transport and phonon vibration of polycrystalline samples of Li-doped La214 system have been studied by X-ray diffraction, resistivity and transmission infrared (IR) spectra. It is found that the doping of Li in La₂Cu_1−xLi_xO_y (0x0.5) and La_1.85+xSr_0.15−xCu_1−xLi_xO_y shows different effects on the crystal structure and resistivity. The change of resistivity with Li doping can be interpreted based on the variation of carrier concentration and impurity scattering. The shift of two IR vibration modes around 512 and 683 cm⁻¹, which are referred to the vibrations of apical oxygen and planar oxygen, is analyzed in detail. The change of the intensity for the mode around 683 cm⁻¹ is interpreted in terms of the screened effect of charge carrier in CuO₂ plane. The relation among crystal microstructure, carrier concentration, transport properties and phonon vibration is analyzed and discussed based on the experiment results.     

Niobium based tetragonal tungsten bronzes as potential anodes for solid oxide fuel cells: synthesis and electrical characterisation

In this paper we report studies on a range of niobate based tungsten bronzes, with a view to analysing their potential as anode materials in SOFCs. Six systems were studied, (Sr_1−xBa_x)_0.6Ti_0.2Nb_0.8O₃, Sr_0.6−xLa_xTi_0.2+xNb_0.8−xO₃, (Sr_0.4−xBa_x)Na_0.2NbO₃, (Ba_1−xCa_x)_0.6Ti_0.2Nb_0.8O₃, Ba_0.5−xA_xNbO₃ (A=Ca, Sr), and Ba_0.3NbO_2.8, and the electrical conductivities were examined over a range of oxygen partial pressures (10⁻²⁰–1 bar). All the systems showed good conductivity in low oxygen partial pressures, with values as high as 8 S cm⁻¹ at 930°C (P(O₂)=10⁻²⁰ bar). As the oxygen partial pressure was raised the conductivity dropped showing in most cases an approximate [P(O₂)]^−1/4 dependence and good re-oxidation kinetics. Of all the samples studied the (Sr_1−xBa_x)_0.6Ti_0.2Nb_0.8O₃ and (Ba_1−xCa_x)_0.6Ti_0.2Nb_0.8O₃ systems appear most promising for potential use as anode materials in SOFCs.     

Interplay of structure and magnetism in ruthenocuprates: a Raman scattering and dilatometry study

We present a Raman scattering and dilatometry study of polycrystalline samples of the magnetic superconducting ruthenocuprates RuSr₂Gd_2−xCe_xCu₂O_10+δ (RuGd₁₂₂₂) and RuSr₂GdCu₂O₈ (RuGd₁₂₁₂). In the Raman spectra a high-temperature diffusive-like laser-tail develops below the magnetic ordering temperature (T_M) into an underdamped peak which shifts up to 130 cm⁻¹. A line assigned to O(Ru) phonons hardens, narrows and strengthens strongly below T_M. Finally, a phonon peak appears below T_M at 590 cm⁻¹. These three magnetic-order-dependent features are observed for RuGd₁₂₁₂ and for RuGd₁₂₂₂ with x=1.0, but do not appear for x=0.5. Dilatometry measurements, on the other hand, evidence a change of the expansion coefficient at T_M. These results point to a structural effect accompanying the magnetic order, and suggest a complex interplay of spin and lattice degrees of freedom in these ruthenocuprates.     

Spectroscopic study of BixEu1−xVO4 and BiyGd1−yVO4 mixed oxides

The mixed oxides Bi_xEu_1−xVO₄ and Bi_yGd_1−yVO₄ crystallize in a zircon-type structure, for 0 <x < 0.6 and 0 < y < 0.64, and in a fergusonite-type structure, for 0.94 < x < 1 and 0.93 < y < 1. A process of competition between the dominant and the constrained effects of the lone-pair 6s² of Bi³⁺ is discussed. The diffuse reflectance spectroscopic studies of these mixed oxides are presented. The observed broad bands are attributed to charge transfer processes and the sharp peaks in the Bi_xEu_1−xVO₄ spectra are ascribed to intra-configurational 4f – 4ftransitions of the Eu³⁺ ion. The broad absorption shift in BiLnVO₄ (Ln : Eu and Gd) compounds to the longer wavelengths range, when Bi is introduced in the LnVO₄ lattice, is ascribed to charge transfer processes in a Bi-VO₄ center and are interpreted assuming a Jahn-Teller effect in the excited state of Bi³⁺. The concept of an internal pressure of Bi³⁺ ions is also used to explain the broad A-band shifts.     

Preparation, characterization and oxide ion conductivity in U-substituted Bi4V2O11

A Bi₂V_{1 − x − y}U_xBi_yO_{5.5 + 0.5x − y} solid solution derived from Bi₄V₂O₁₁ has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U⁶⁺ for V⁵⁺ in Bi₄V₂O₁₁ leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M⁶⁺ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi₂UO₆.     

Effects of cation- or oxide ion-defect on conductivities of apatite-type La–Ge–O system ceramics

A series of apatite-type La–Ge–O ceramics were prepared and their cation-defect at the 4f+6h sites and oxide ion-defect at 2a site were investigated. In La_xGe₆O_12+1.5x ceramics of x=6–12, the higher conductivities were obtained in the region of apatite composition, La_x(GeO₄)₆O_1.5x−12 (x=8–9.33), and the highest conductivity was achieved for La₉(GeO₄)₆O_1.5 (x=9), where the number of cation (La³⁺) occupying the 4f+6h sites is 9 and the number of oxide ion occupying the 2a site is 1.5. The ceramics with cation- and oxide ion-defects were La_9−0.66xSr_x(GeO₄)₆O_1.5 (x=0–1), La_9−1.33xZr_x(GeO₄)₆O_1.5 (x=0–1), La_9−xSr_x(GeO₄)₆O_1.5−0.5x (x=0–3), La_9−xZr_x(GeO₄)₆O_1.5+0.5x (x=0–1), La_x(GeO₄)_3x−21(AsO₄)_27−3xO_1.5 (x=0–3), La_x(GeO₄)_33−3x(AlO₄)_3x−27O_1.5 (x=0–3), La₉(GeO₄)_6−x (AlO₄)_xO_1.5−0.5x (x=0–3), La₉(GeO₄)_6−x(AsO₄)_xO_1.5+0.5x (x=0–1), La_9.33−xSr_x(GeO₄)₆O_2−0.5x (x=0–1.2) and La_x(GeO₄)_4.5(AlO₄)_1.5O_1.5x−12.75 (x=8.8–9.83), which were prepared by the partial substitution of La³⁺and GeO₄⁴⁻of the basic apatite La₉(GeO₄)₆O_1.5 with Sr²⁺ or Zr⁴⁺ and AlO₄⁵⁻ or AsO₄³⁻. Such substitutions lowered the conductivity of La₉(GeO₄)₆O_1.5. These results were discussed by the electrostatic interaction between Sr²⁺, Zr⁴⁺, AlO₄⁵⁻ or AsO₄³⁻ and oxide ion as a conductive species.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

A theoretical study of CHx chemisorption on the Ni(100) and Ni(111) surfaces

Cluster model calculations have been performed for CH_x, x = 0−3, chemisorbed on Ni(100) and Ni(111). The predicted chemisorption energies, at the present level of theory, based on bond-prepared clusters for Ni(100) are for carbon 150 kcal/mol, for CH 136 kcal/mol, for CH₂ 91 kcal/mol and for CH₃ 46 kcal/mol. The corresponding energies for Ni(111) are for CH 120 kcal/mol, for CH₂ 88 cal/mol and for CH₃ 49 kcal/mol. These chemisorption energies lead to similar stabilities for all CH_x fragments on both Ni(100) and Ni(111). Large basis sets and multi-reference correlation treatments are found to be very important in particular for the multiply bonded species. The vibrational C-H stretching frequencies predicted for CH_x on Ni(111) are for CH 3054 cm⁻¹ (2980 cm⁻¹), for CH₂ 3204 cm⁻¹ and for CH₃ 2709 cm⁻¹ (2680 cm⁻¹), where the available experimental values are given in parent The predicted ionization spectra of adsorbed CH_x are also in general agreement with experimental findings.     

Structure, oxygen stoichiometry and electrical conductivity in the system Sr-Ce-Co-O

Mixed oxides in the system S-Ce-Co-O were prepared by solid state reaction and by freeze-drying of precursor compounds followed by thermal treatment. Two types of perovskite oxides exist in the system: Solid solutions of the type Sr_{1 − y}Ce_yCoO_{3 − x} and mixed oxides of the type (1 − y)SrCeO₃ − ySrCoO_{3 − x}. Microstructures and phase compositions were determined by electron microscopy and X-ray diffraction. SrCoO_{3 − x} forms a solid solution of ceria on the A-site in the strontium cobaltite lattice up to 0.15 mol Ce. This solid solution corresponds to the high-temperature structure of pure SrCoO_{3 − x} and is characterized by high oxygen exchange and electrical conductivity. The oxygen deficiency x was measured by solid electrolyte coulometry. The oxygen deficiency of solid solutions Sr_{1 − y}Ce_yCoO_{3 − x} increases with temperature and decreases with pO₂ in the ambient atmosphere and with increasing Ce dopant concentration. The pO₂-T-x diagram of the solid solution was determined. The T, pO₂ and dopant concentration dependencies of electrical conductivity were measured by a four-point d.c. technique. By Ce doping strontium cobaltite becomes a stabilized high-conductive material (maximum conductivity: 500 S cm⁻¹ at 400 °C, E_a = 0.025 eV, p-type). Above this temperature the T-coefficient of the conductivity changes from positive (semiconducting) to negative values.     

Study of superconducting state parameters of alkali–alkali binary alloys by a pseudopotential

A detailed study of the superconducting state parameters (SSP) viz. electron–phonon coupling strength λ, Coulomb pseudopotential μ^*, transition temperature T_C, isotope effect exponent and effective interaction strength N_OV of ten alkali–alkali binary alloys i.e. Li_1−xNa_x, Li_1−xK_x, Li_1−xRb_x, Li_1−xCs_x, Na_1−xK_x, Na_1−xRb_x, Na_1−xCs_x, K_1−xRb_x, K_1−xCs_x and Rb_1−xCs_x are made within the framework of the model potential formalism and employing the pseudo-alloy-atom (PAA) model for the first time. We use the Ashcroft’s empty core (EMC) model potential for evaluating the superconducting properties of alkali alloys. Five different forms of local field correction functions viz. Hartree (H), Taylor (T), Ichimaru–Utsumi (IU), Farid et al. (F) and Sarkar et al. (S) are used to incorporate the exchange and correlation effects. A considerable influence of various exchange and correlation functions on λ and μ^* is found from the present study. Reasonable agreement with the theoretical values of the SSP of pure components is found (corresponding to the concentration x = 0 or 1). It is also concluded that nature of the SSP strongly depends on the value of the atomic volume Ω₀ of alkali–alkali binary alloys.     

Magneto-optical and magnetic properties of some solid solutions of C1b-Heusler compounds

The large Kerr effect in PtMnSb has been ascribed to details of its unusual band structure. Substitution of atoms will modify the band structure and consequently alter the Kerr effect. In the present investigation we have determined the magneto-optical properties at room temperature in the energy range 0.5–5 eV of several solid solutions of C1_b−Heusler compounds, comprising the solid solution series Pt_1−xNi_xMnSb, Pt_1−xRh_xMnSb, Ni_1−xCr_xMnSb, Ni_1−xFe_xMnSb and PtMnSb_0.9Sn_0.1. The magnetic and crystallographic properties were determined for the solid solution series Pt_1−xNi_xMnSb, Pt_1−xRh_xMnSb and Ni_1−xCr_xMnSb. Neither of the substitutions leads to a larger Kerr effect than that present in the pure compound. Moreover, it is found that the shape of the spectra does not change significantly. For one case, Ni substituted in PtMnSb, band structure calculations were made for hypothetically ordered compounds. The results agree with the experimental findings that near 1.7 eV magneto-optically active transitions persist on substituting Ni in PtMnSb.     

Short-range order and F ion diffusion inside the Pb1 − xAlxF2 + x solid solution Part I: F-NMR investigation

A ¹⁹F-NMR investigation of the Pb_{1 − x}Al_xF_{2 + x} (0 ≤ x ≤ 0.12) solid solution and of the ordered Pb₉Al₂F₂₄ phase is undertaken as a function of temperature. Several F⁻ ion groups become progressively mobile at the NMR time scale at increasing temperature, the first, (F_i)_pb and (F_n)_pb, are located in the surroundings of Pb²⁺ cations, the second ones, (F_rd)_AI and (F_ra)_Al, in that of Al³⁺ cations. Four types of fluoride ions are distinguished in the ¹⁹F-NMR spectra of rigid lattice at low temperature (T = 175 K) and the distribution of fluoride ions among the four sites is determined by deconvolution of the spectra registered. The sites occupied by the (F_n)_pb anions are identified with the normal anionic sites of the fluorite network, the others with different interstitial sites.     

Doping effects in the Sr14Cu24O41-type structure: a Raman scattering study

Polarized micro-Raman spectra of different compounds belonging to the Sr₁₄Cu₂₄O₄₁-type structure were studied. In the spectra with parallel polarization along the plane crystal axes of the insulating samples Sr₉R₅Cu₂₄O₄₁ (R = La, Y) a broad peak near 3000 cm⁻¹, similar to the well-known two-magnon peak in the layered cuprates, was observed. In addition to the Raman lines characteristic for this structure, we observed only in the spectra with parallel to the chains numerous lines between 100 and 1200 cm⁻¹, probably originating from Raman-forbidden infrared-active only LO phonons and their combinations. In the spectra of the conducting compounds Sr_14−xCa_xCu₂₄O₄₁ (x = 0,7) these features were very weak or disappeared. We interpret these results as Raman evidence for hole doping of the Cu₂O₃ “spin-ladder” planes and for a redistribution of holes between chains and planes through Ca substitution in the case of the rare-earth-free samples.     

The solubility of phosphorus in GaN

IIIV_xN_1−x ternary alloys are promising materials for their applications in light-emitting devices in the range of wavelength from ultra violet to the infrared ray due to the large bowing of band gap energy. In this paper, molecular dynamical method was used to calculate the solubility of phosphorus in GaN by using the Gibbs free energy and the dielectric theory. The calculation results show that the content of P in GaN varies with the growth temperature, which may be larger than 25% in the N-rich GaP_xN_1−x or less than 90% in the P-rich GaP_xN_1−x, at the growth temperature of about 1500 K. We compared our theoretical results with those reported in references. By using light-radiation heating together with low-pressure metal-organic chemical vapor deposition, and ion implantation techniques, we have successfully synthesized N-rich (x < 0.17) and P-rich GaP_xN_1−x (x > 0.90) compounds.     

Positive linear magnetoresistance in Fex–C1−x composites

A large positive magnetoresistance (MR) has been found in micro-sized Fe_x–C_1−x composites. At a magnetic field of 5 T, the Fe_0.2–C_0.8 composite has the largest MR, 53.8% and 190% at room temperature and at 5 K, respectively. The magnetic field dependence of the MR can be described approximately as MR∝Bⁿ, and the value of exponent n is determined by the Fe weight concentration and temperature, ranging from 1/4 to 6/4. It appears that Fe_x–C_1−x has a linear field dependence of the positive MR at different temperatures. The possible mechanism for the positive MR is discussed.