Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Preparation, structure and oxide ion conductivity in Ce6−xYxMoO15−δ (x=0.1-1.4) solid solutions

The Ce_6−xY_xMoO_15−δ solid solution with fluorite-related structure have been characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), IR, Raman, scanning electric microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) methods. The electric conductivity of samples is investigated by Ac impedance spectroscopy. An essentially pure oxide-ion conductivity of the oxygen-deficiency was observed in pure argon, oxygen and air. The highest oxygen-ion conductivity was found in Ce_5.5Y_0.5MoO_15−δ ranging from 5.9×10⁻⁵ (S cm⁻¹) at 300 °C to 1.3×10⁻² (S cm⁻¹) at 650 °C, respectively. The oxide-ion conductivities remained stable over 80 h-long test at 800 °C. These properties suggested that significant oxide-ionic conductivity exists in these materials at moderately elevated temperatures.     

Synthesis of goethite from Fe(OH)2 precipitates: Influence of Fe(II) concentration and stirring speed

Magnetic methods are efficient tools in soil and environmental science. But in such natural environments, several magnetic minerals are generally present. So, synthetic standard samples are necessary for calibration of laboratory techniques. The aim of this study was to synthesise goethite free of magnetic impurities (concentration <∼1 μg kg⁻¹) with different crystal sizes. Goethite was prepared by oxidation of aqueous suspensions of Fe(OH)₂ precipitates. Final products were characterised by X-ray diffraction, infrared spectroscopy, scanning and transmission electron microscopy and magnetic methods. Goethite could be obtained in the absence of any trace of strong magnetic minerals using FeSO₄·7H₂O and NaOH as reactants with the following experimental conditions: temperature=45 °C, [FeSO₄·7H₂O]=0.50 mol L⁻¹, [NaOH]=0.20 mol L⁻¹, stirring speed=760 rpm. The Fe(II) concentration and the stirring speed were varied. It proved possible to modify the size of the goethite crystals by varying the Fe(II) concentration and the stirring speed, but important changes of these parameters induced the formation of other phases, lepidocrocite when the oxidation reaction was drastically accelerated and Fe₃O₄ when the reaction was slowed down. In any case, for weak magnetic fields, a low-coercivity magnetic mineral saturating at weak magnetic fields was observed. It may correspond to traces of δ-FeOOH or to domains structurally similar to δ-FeOOH inside the multidomainic crystals of δ-FeOOH.     

Preparation of activated carbon from a renewable bio-plant of Euphorbia rigida by H2SO4 activation and its adsorption behavior in aqueous solutions

The use of activated carbon obtained from Euphorbia rigida for the removal of a basic textile dye, which is methylene blue, from aqueous solutions at various contact times, pHs and temperatures was investigated. The plant material was chemically modified with H₂SO₄. The surface area of chemically modified activated carbon was 741.2 m² g⁻¹. The surface characterization of both plant- and activated carbon was undertaken using FTIR spectroscopic technique. The adsorption process attains equilibrium within 60 min. The experimental data indicated that the adsorption isotherms are well described by the Langmuir equilibrium isotherm equation and the calculated adsorption capacity of activated carbon was 114.45 mg g⁻¹ at 40° C. The adsorption kinetics of methylene blue obeys the pseudo-second-order kinetic model and also followed by the intraparticle diffusion model up to 60 min. The thermodynamic parameters such as ΔG°, ΔH° and ΔS° were calculated to estimate the nature of adsorption. The activation energy of the system was calculated as 55.51 kJ mol⁻¹. According to these results, prepared activated carbon could be used as a low-cost adsorbent to compare with the commercial activated carbon for the removal textile dyes from textile wastewater processes.     

MgB2 fabrication by diffusion-controlled three layered (B-Mg-B) technique

MgB₂ was successfully fabricated through diffusion-controlled three-layered (B-Mg-B) technique under high pressure. Due to melting temperature of Mg, the material was pre-heat treated at 600 °C between 1 and 48 h. Optimum pre-heat treatment condition was found to be 600 °C for 48 h. Then, the compacted material was grinded and pelletized under pressure of 2 ton. The pellets were heat treated at 600-900 °C for 1-48 h. Optimum heat treatment condition was determined to be 800 °C for 1 h for formation of almost pure MgB₂. Diffusion coefficient was determined with Fick's law and EDX data. Diffusion coefficient value for B in Mg matrix and Mg in B matrix was determined to be 1.66×10⁻⁷ and 3.14×10⁻⁸ cm²/sn, respectively. Best T_c value (39.4 K) was obtained for material heat treated at 800 °C for 1 h. A symmetric hysteresis was obtained for the best MgB₂ material and magnetization decreased with increase in the temperature and the applied magnetic field.     

Structural evolution of electroless Ni-P coating on Al-12 wt.% Si alloy during heat treatment at high temperatures

The work is concerned with the high-temperature heat treatment of an Al-12 wt.% Si alloy coated by an electroless Ni-P layer. The electroless deposition took place on a pre-treated substrate in a bath containing nickel hypophosphite, nickel lactate and lactic acid. Resulting Ni-P deposit showed a thickness of about 8 μm. The coated samples were heat-treated at 200-550 °C/1-24 h. LM, SEM, EDS and XRD were used to investigate phase transformations. Adherence to the substrate was estimated from the scratch test and microhardness of the heat-treated layers was also measured. It is found that various phase transformations occur, as both temperature and annealing time increase. These include (1) amorphous Ni-P → Ni + Ni₃P, (2) Al + Ni → Al₃Ni, (3) Ni₃P → Ni₁₂P₅ + Ni, (4) Ni₁₂P₅ → Ni₂P + Ni, and (5) Al₃Ni + Ni → Al₃Ni₂. The formation of intermetallic phases, particularly Al₃Ni₂, leads to significant surface hardening, however, too thick layers of intermetallics reduce the adherence to the substrate. Based on the growth kinetics of the intermetallic phases, diffusion coefficients of Ni in Al₃Ni and Al₃Ni₂ at 450-550 °C are estimated as follows: D(Al₃Ni, 450 °C) ≈ 6 × 10⁻¹² cm² s⁻¹, D(Al₃Ni, 550 °C) ≈ 4 × 10⁻¹¹ cm² s⁻¹, D(Al₃Ni₂, 450 °C) ≈ 1 × 10⁻¹² cm² s⁻¹ and D(Al₃Ni₂, 550 °C) ≈ 1 × 10⁻¹¹ cm² s⁻¹. Mechanisms of phase transformations are discussed in relation to the elemental diffusion.     

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Ion beam sputtering process was used to deposit n-type fine-grained Bi₂Te₃ thin films on BK7 glass substrates at room temperature. In order to enhance the thermoelectric properties, thin films are annealed at the temperatures ranging from 100 to 400 °C. X-ray diffraction (XRD) shows that the films have preferred orientations in the c-axis direction. It is confirmed that grain growth and crystallization along the c-axis are enhanced as the annealing temperature increased. However, broad impurity peaks related to some oxygen traces increase when the annealing temperature reached 400 °C. Thermoelectric properties of Bi₂Te₃ thin films were investigated at room temperature. The Bi₂Te₃ thin films, including as-deposited, exhibit the Seebeck coefficients of −90 to −168 μV K⁻¹ and the electrical conductivities of 3.92×10²-7.20×10² S cm⁻¹ after annealing. The Bi₂Te₃ film with a maximum power factor of 1.10×10⁻³ Wm⁻¹ K⁻² is achieved when annealed at 300 °C. As a result, both structural and transport properties have been found to be strongly affected by annealing treatment. It was considered that the annealing conditions reduce the number of potential scattering sites at grain boundaries and defects, thus improving the thermoelectric properties.     

Influence of B2O3 to the inhomogeneous broadening and spectroscopic properties of Er/Yb codoped fluorophosphate glasses

In a three-components fluorophosphate glass system, the introduction of H₃BO₃ brings some valuable influence to the spectroscopic and thermal properties of the glasses. With H₃BO₃ increases from 2 to 20 mol%, Ω₆, S_ed4I13/2, FWHM, T_g and fluorescence lifetime change from 3.21×10⁻²⁰ cm², 1.77×10⁻²⁰ cm², 45 nm, 480 °C and 8.8 ms to 4.66×10⁻²⁰ cm², 2.11×10⁻²⁰ cm², 50 nm, 541 °C and 7.4 ms, respectively. σ_abs, σ_emi, FWHM×τ_f×σ_emi has a maximum when H₃BO₃ is 11 mol%. T_g and T_x−T_g increases with H₃BO₃ introduction. Results showed that in fluorophosphate glasses, proper amount of B₂O₃ can be used as a modifier to suppress upconversion and improve spectroscopic properties, broadband property and crystallization stability of the glasses while keeps the fluorescence lifetime relatively high.     

Preparation and characterization of carbons for the retention of halogens in the condenser vacuum system of a thermonuclear plant

Activated carbons were prepared by air and carbon dioxide activation, from almond tree pruning, with the aim of obtaining carbons that reproduce the textural and mechanical properties of the carbons currently used in the filtering system of the condenser vacuum installation of a Thermonuclear Plant (CNA; Central Nuclear de Almaraz in Caceres, Spain), produced from coconut shell. The variables studied in non-catalytic gasification series with air were the temperature (215-270 °C) and the time (1-16 h) and the influence of the addition of one catalyst (Co) and the time (1-2 h) in catalytic gasification. In the case of activation with CO₂, the influence of the temperature (700-950 °C) and the time (1-8 h) was studied. The resulting carbons were characterized in terms of their BET surface, porosity, and pore size distribution. The N₂ adsorption isotherms at 77 K for both series showed a type I behaviour, typical of microporous materials. The isotherms showed that with both gasificant agents the temperature rise produced an increase in the carbon porosity. With regards to the activation time, a positive effect on the N₂ adsorbed volume on the carbons was observed. The best carbons of each series, as well as the CNA (carbon currently used in the CNA), were characterized by mercury porosimetry and iodine solution adsorption isotherms. The results obtained allowed to state that several of the carbons produced had characteristics similar to the carbon that is target of reproduction (which has S_BET of 741 m² g⁻¹, V_mi of 0.39 cm³ g⁻¹ and a iodine retention capacity of 429.3 mg g⁻¹): carbon C (gasification with CO₂ at 850 °C during 1 h), with S_BET of 523 m² g⁻¹, V_mi of 0.33 cm³ g⁻¹ and a iodine retention capacity of 402.5 mg g⁻¹, and carbon D (gasification with CO₂ at 900 °C during 1 h), whose S_BET is 672 m² g⁻¹, V_mi is 0.28 cm³ g⁻¹ and has a iodine retention capacity of 345.2 mg g⁻¹.     

Chitin-humic acid hybrid as adsorbent for Cr(III) in effluent of tannery wastewater treatment

Adsorption of Cr(III) from both synthetic and real samples of tannery wastewater treatment's effluent on chitin-humic acid (chitin-HA) hybrid has been carried out. Rate constant and capacity of adsorption of Cr(III) from the synthetic sample were investigated and removal of Cr(III) from the real sample was tested at optimum medium acidity equivalent to pH 3.5. Characterization using Fourier transform infra red (FT-IR) spectroscopy revealed that both COO⁻ and N-acetyl originated from respectively humic acid (HA) and chitin were involved on the adsorption of Cr(III), and hence the Freundlich's multilayer and multi-energy adsorption model was more applicable to treat the adsorption data than the Langmuir's monolayer and mono-energy model. The quantification of adsorption capacity and rate constant using Freundlich isotherm model and first order adsorption reaching equilibrium yielded values of 6.84 × 10⁻⁴ mol g⁻¹ (35.57 mg g⁻¹) and 1.70 × 10⁻² min⁻¹, respectively. Removal test for the real wastewater treatment's effluent showed that the maximum amount of Cr(III) could be removed by 1 g of chitin-HA hybrid was 2.08 × 10⁻⁴ mol or equivalent to 10.82 mg.     

The luminescence and optoelectrical properties of ITO films prepared by a sputter type negative metal ion deposition

Transparent conducting indium tin oxide (ITO) thin films were prepared on glass substrates by a magnetron sputter type negative ion source which requires cesium (Cs) vapor injection for surface negative ionization on the ITO target surface. Although the film was prepared at 70 °C, it attained high optical transmittance, 88% and low resistivity, 2.03 × 10⁻⁴ Ω cm, at an optimized Cs partial pressure of P_Cs = 1.7 × 10⁻³ Pa. The as-deposited ITO films have a poly-crystalline structure with (2 1 1), (2 2 2), (4 0 0), (4 1 1) and (4 4 0) reflections.Also, ITO films prepared at P_Cs = 1.7 × 10⁻³ Pa were post-deposition vacuum annealed at 300 °C for 30 min. The films had a resistivity of 1.8 × 10⁻⁴ Ω cm and a transparency of 89.2%. The post-deposition vacuum annealed ITO film was used as an anode for a transparent organic light emitting diode (TOLED). A maximum luminance of 19,000 cd/m² was obtained.     

Annealing induced microstructural evolution of electrodeposited electrochromic tungsten oxide films

A significant influence of microstructure on the electrochromic and electrochemical performance characteristics of tungsten oxide (WO₃) films potentiostatically electrodeposited from a peroxopolytungstic acid (PPTA) sol has been evaluated as a function of annealing temperature. Powerful probes like X-ray diffractometry (XRD), transmission electron microscopy (TEM), UV-vis spectrophotometry, multiple step chronoamperometry and cyclic voltammetry have been employed for the thin film characterization. The as-deposited and the film annealed at 60 °C are composed of nanosized grains with a dominant amorphous phase, as well as open structure which ensues from a nanoporous matrix. This ensures a greater number of electroactive sites and a higher reaction area thereby manifesting in electrochromic responses superior to that of the films annealed at higher temperatures. The films annealed at temperatures ≥250 °C are characterized by a prominent triclinic crystalline structure and a hexagonal phase co-exists at temperatures ≥400 °C. The deleterious effect on the electrochromic properties of the film with annealing is ascribed to the loss of porosity, densification and the increasing crystallinity and grain size. Amongst all films under investigation, the film annealed at 60 °C exhibits a high transmission modulation (ΔT ∼ 68%) and coloration efficiency (η ∼ 77.6 cm² C⁻¹) at λ = 632.8 nm, charge storage capacity (Q_ins ∼ 21 mC cm⁻²), diffusion coefficient (6.08 × 10⁻¹⁰ cm² s⁻¹), fast color-bleach kinetics (t_c ∼ 275 s and t_b ∼ 12.5 s) and good electrochemical activity, as well as reversibility for the lithium insertion-extraction process upon cycling. The remarkable potential, which the film annealed at 60 °C has, for practical “smart window” applications has been demonstrated.     

Hydrogen peroxide biosensor based on gold nanoparticles/thionine/gold nanoparticles/multi-walled carbon nanotubes-chitosans composite film-modified electrode

In this paper, an amperometric electrochemical biosensor for the detection of hydrogen peroxide (H₂O₂), based on gold nanoparticles (GNPs)/thionine (Thi)/GNPs/multi-walled carbon nanotubes (MWCNTs)-chitosans (Chits) composite film was developed. MWCNTs-Chits homogeneous composite was first dispersed in acetic acid solution and then the GNPs were in situ synthesized at the composite. The mixture was dripped on the glassy carbon electrode (GCE) and then the Thi was deposited by electropolymerization by Au-S or Au-N covalent bond effect and electrostatic adsorption effect as an electron transfer mediator. Finally, the mixture of GNPs and horseradish peroxidase (HRP) was assembled onto the modified electrode by covalent bond. The electrochemical behavior of the modified electrode was investigated by scanning electron microscope, cyclic voltammetry and chronoamperometry. This study introduces the in situ-synthesized GNPs on the other surface of the modified materials in H₂O₂ detection. The linear response range of the biosensor to H₂O₂ concentration was from 5 × 10⁻⁷ mol L⁻¹ to 1.5 × 10⁻³ mol L⁻¹ with a detection limit of 3.75 × 10⁻⁸ mol L⁻¹ (based on S/N = 3).     

Identification of optical nonlinearities of dye-doped nematic and polymer-dispersed liquid crystals using Z-scan technique

This study investigates the nonlinear optical properties of azo-dye-doped nematic and polymer-dispersed liquid crystal (ADDPDLC) films with nano-sized LC droplets using the Z-scan technique, which is a simple but powerful technique for measuring the optical Kerr constants of materials. The results indicate that the optical Kerr constant (n₂) of the azo-dye-doped nematic LC (ADDLC) film is large because of the photoisomerization effect and the thermal effect. Therefore, the optical Kerr constant of this material can be modulated by varying the temperature of the sample and the direction of polarization of incident laser. The range of n₂ modulated is from −5.26 × 10⁻³ to 1.62 × 10⁻³ cm²/W. The optical Kerr constants of ADDPDLC films at various temperatures are also measured. The experimental results reveal that liquid crystals in the ADDPDLC film strengthen the nonlinearity. The n₂ of the ADDPDLC film is maximal at ∼35 °C, because of the decrease in the clearing temperature of the ADDPDLC films. The clearing temperatures of the liquid crystals (E7), and the ADDPDLC film used in this work were found to be 61 °C and 43 °C, respectively.     

Molecular dynamics and phase transitions in paramagnetic [Mn(H2O)6][SiF6] investigated by H NMR

The temperature dependences of ²H NMR spectra and spin-lattice relaxation time T₁ have been measured for paramagnetic [Mn(H₂O)₆][SiF₆]. The obtained ²H NMR spectra were simulated by considering the quadrupole interaction and paramagnetic shift. The variation of the spectra measured in phase III was explained by the 180° flip of water molecules. The activation energy E_a and the jumping rate at infinite temperature k₀ for the 180° flip of H₂O were obtained as 35 kJ mol⁻¹ and 4×10¹⁴ s⁻¹, respectively. The spectral change in phases I and II was ascribed to the reorientation of [Mn(H₂O)₆]²⁺ around the C₃ axis where the E_a and k₀ values were estimated as 45 kJ mol⁻¹ and 1×10¹³ s⁻¹, respectively. From the almost temperature independent and short T₁ value, the correlation time for electron-spin flip-flops, τ_e, and the exchange coupling constant J were obtained as 3.0×10⁻¹⁰ s and 2.9×10⁻³ cm⁻¹, respectively. The II-III phase transition can be caused by the onset of the jumping motion of [Mn(H₂O)₆]²⁺ around the C₃ axis.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Effects of protons and acceptor substitution on the electrical conductivity of La6WO12

Transport properties and non-stoichiometry of La_1−xCa_xW_1/6O₂ and La_1−yW_1/6O₂ (x=0, 0.005, 0.05; y=0.05, 0.1) have been characterized by means of impedance spectroscopy, the EMF-technique, H⁺/D⁺ isotope exchange, and thermogravimetry in the temperature range 300-1200 °C as a function of oxygen partial pressure and water vapor partial pressure. The materials exhibit mixed ionic and electronic conductivities; n- and p-type electronic conduction predominate at high temperatures under reducing and oxidizing conditions, respectively. Protons are the major ionic charge carrier under wet conditions and predominates the conductivity below ∼750 °C. The maximum in proton conductivity is observed for LaW_1/6O₂ with values reaching 3×10⁻³ S/cm at approximately 800 °C. The high proton conductivity for the undoped material is explained by assuming interaction between water vapor and intrinsic (anti-Frenkel) oxygen vacancies.     

Variable-temperature FT-IR studies on the thermodynamics of carbon dioxide adsorption on a faujasite-type H-Y zeolite

Adsorption of carbon dioxide on a faujasite-type H-Y zeolite (Si:Al = 2.6:1) was studied by variable-temperature (200-290 K range) infrared spectroscopy. Adsorbed CO₂ molecules interact with the Brønsted acid Si(OH)Al groups located inside the zeolite supercage, bringing about a characteristic bathochromic shift of the O-H stretching mode from 3645 cm⁻¹ (free OH group) to 3540 cm⁻¹ (hydrogen-bonded CO₂ adsorption complex). Simultaneously, the asymmetric (ν₃) mode of adsorbed CO₂ is observed at 2353 cm⁻¹. From the observed variation of the integrated intensity of the 3645 and 2353 cm⁻¹ IR absorption bands upon changing temperature, corresponding values of standard adsorption enthalpy and entropy were found to be ΔH° = −28.5(±1) kJ mol⁻¹ and ΔS° = −129(±10) J mol⁻¹ K⁻¹. Comparison with the reported values of ΔH° for CO₂ adsorption on other zeolites is briefly discussed.     

Combinatorial approach to new glasses

An 18-sample glass-melting furnace was newly developed and glass-forming compositional regions were found in lead-free B₂O₃-TeO₂-[xBaF₂/(100−x)BaO] ternary systems. The softening temperatures were measured in the systems to screen out low-melting compositions. The softening temperature ranges from 450 to 470 °C and the thermal expansion coefficient ranges (115-140)× 10⁻⁷ °C⁻¹. These values were comparable to those of typical lead-containing glasses. It was also found that substitution of BaF₂ for BaO effectively lowers the melting temperatures without changing the thermal expansion coefficient.     

InSb quantum dots and quantum rings on InAs-rich surface

We report a study of InSb nanoobjects (quantum dots and quantum rings) grown on InAs-rich surface by liquid phase epitaxy. Characterization of the sample surface was performed using atomic force microscopy (AFM). The bimodal formation of the uncapped InSb quantum dots (QDs) was observed for the growing on a binary InAs substrate. Uniform high-density (1 × 10¹⁰ cm⁻²) quantum dots with a height of 3 nm were obtained at T = 420-430 °C, whereas low-density (5 × 10⁸ cm⁻²) big quantum dots were 9 nm in height. As a buffer layer, lattice-matched InAsSb_0.12P_0.25 solid solution was deposed on InAs substrate using metal-organic vapour phase epitaxy. Deposition from the InSb melt on the buffer layer resulted in the formation of InSb nanoobjects with density as high as 3 × 10¹⁰ cm⁻².