分子束外延制备的垂直易磁化MnAl薄膜结构和磁性

系统地研究了利用分子束外延方法在GaAs(001) 衬底上外延生长的MnAl_x薄膜的结构和垂直易磁化特性随组分及生长温度的依赖关系. 磁性测试表明, 可在较大组分范围内 (0.4≤x≤1.2) 获得大矫顽力的垂直易磁化MnAl_x薄膜, 然而同步辐射X射线衍射和磁性测试发现当x≤0.6时MnAl薄膜出现较多的软磁相, 当x >0.9时, MnAl薄膜晶体质量和化学有序度逐渐降低, 组分为MnAl_0.9时制备的薄膜有最好的[001]取向. 随着生长温度的增加, MnAl_0.9薄膜的有序度、垂直磁各向异性常数、矫顽力和剩磁比均增加, 350℃时制备的MnAl_0.9薄膜化学有序度高达0.9, 其磁化强度、剩磁比、矫顽力和垂直磁各向异性常数分别为265emu/cm³、93.3%、8.3kOe (1 Oe=79.5775A/m)和7.74Merg/cm³ (1 erg=10^-7J). 不含贵金属及稀土元素、良好的垂直易磁化性质、 与半导体材料结构良好的兼容性以及磁性能随不同生长条件的可调控 性使得MnAl薄膜有潜力应用于多种自旋电子学器件. 关键词： 分子束外延 大矫顽力材料 磁各向异性     

Field induced spin reorientation transition in epitaxial La0.5Sr0.5CoO3 films

Strained epitaxial La_0.5Sr_0.5CoO₃ films are grown on LaAlO₃ substrate. Structural, electrical, and magnetic measurements were carried out. Out of plane lattice parameter of the film undergoes compressive strain and the coercivity is enhanced. The zero field cooled (ZFC) magnetization curve for a field applied parallel to the film plane shows a jump, which suggests a spin reorientation transition (SRT), while ZFC magnetization for a field applied perpendicular to the film plane is featureless. This jump in magnetization is shifted to higher temperatures when the magnetic field is reduced. The SRT is attributed to the strain in the film.     

Effect of carbon mixing on the perpendicular magnetization of [FePt/C]n=4/FePt multilayer nanocomposite films

The effect of carbon mixing on the perpendicular magnetization of magnetron sputtered FePt thin films was studied using magnetic property measurement, X-ray diffraction, and TEM microscopy. Micromagnetic simulation was carried out to study the effect of texture on the perpendicular coercivity. Unlike general conviction, the mixing of FePt with carbon led to a significant enhancement in the perpendicular magnetization. The maximum enhancement of perpendicular magnetization was observed at about 20 vol% of carbon, where carbon amorphous film started to completely enclose the individual FePt grains. This reason was explained that the epitaxial growth and thus perpendicular texture of ordered FePt grains were maximized due to the relaxation of coherency for epitaxial growth which was maximized in the isolated grains. The perpendicular coercivity reached 8500 Oe, while the in-plane coercivity (120 Oe) remained negligible. The simulation showed that the enhancement of perpendicular texture can largely increase the perpendicular coercivity of FePt:C thin film.     

Growth-induced perpendicular anisotropy of grains in Co-Al-O nanogranular ferromagnetic films

This paper reports on the results of the magnetostatic measurements for Co-Al-O nanogranular films over a wide range of concentrations of the ferromagnetic component x. It has been revealed that grains in the films are characterized by the growth-induced anisotropy with easy axes directed perpendicular to the film plane. The maximum field of the single-grain perpendicular anisotropy reaches ∼2.5 kOe for samples in the vicinity of the percolation threshold (x ≈ 61 at % Co). It has been established that the characteristic features of the superparamagnetic behavior of an ensemble of oriented Stoner-Wohlfarth particles are retained for the sample with x ≈ 61 at % Co in the presence of the demagnetization field associated with the net magnetization of the film. The influence of the demagnetization field of the film on the shape of the magnetization reversal curves, the coercivity, and the blocking temperature has been investigated and simulated. The results of the simulation are consistent with the experimental data.     

Effect of thermal annealing on the magnetic properties of thin films of Co-Pd alloys

The results of studies of the effect of thermal annealing on the magnetic properties of thin films of Co-Pd alloys are described, along with a method for obtaining easy-axis perpendicular anisotropy in these materials. The method consists of depositing layers of the alloy on a substrate whose thermal expansion coefficient is considerably smaller than that of the film, and then annealing it in a vacuum. This method is used to prepare samples with rectangular hysteresis loops for magnetization perpendicular to the plane of the film, coercive forces of 750 Oe, and Kerr rotation angles of 0.21°. Also presented are the results of experiments on thermomagnetic recording on the samples. Zh. Tekh. Fiz. 68, 66–70 (April 1998)     

MFM and AFM study of thin cobalt films modified by fluorosilane

Polycrystalline cobalt films 100 nm thick were thermally evaporated on oxidized Si(100) substrates. Then 1H, 1H, 2H, 2H perfluorodecyltrichlorosilane (FDTS) films of various thicknesses, in the range of about 2 nm to 30 nm, were grown on cobalt surfaces by vapor phase deposition (VPD). The cobalt films modified by FDTS were investigated using magnetic force microscopy (MFM) and atomic force microscopy (AFM). MFM observation showed that the magnetic structure of the cobalt films modified by FDTS is composed of domains with a considerable component of magnetization perpendicular to the film surface. This in turn indicates that the cobalt films on oxidized Si(100) substrates crystallize in the hexagonal close-packed (HCP) phase and exhibit a texture with the hexagonal axis perpendicular to the film surface. The magnetic domains formed a maze structure. The domain width increased from typically 80–120 nm to 400–500 nm with increasing the thickness of FDTS films from about 2 nm to 30 nm. AFM imaging of the surfaces of FDTS films revealed the presence of an agglomerate morphology. The agglomerates varied in size from typically 30–70 nm to 150–300 nm as the film thickness was increased from about 2 nm to 30 nm.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

High quality La_2/3Ca_1/3MnO₄(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T _c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.     

Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates

Zn0.95Co0.05 O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method.The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11 ˉ 20) sapphire substrate.Based on the results of high-resolution transmission electron microscopy and x-ray diffraction,C-plane films show larger lattice mismatch.The films exhibit magnetic and semiconductor properties at room temperature.The coercivity of the film is about 8000 A/m at room temperature.They are soft magnetic materials with small remanent squareness S for both crystal orientations.There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.     

Magnetization processes in CoNiW films

The torque curves of hard magnetic CoNiW films with perpendicular magnetic anisotropy are analysed. Using the dependence of the rotational hysteresis energy losses on the field, both in the film plane and perpendicular to it, a conclusion is drawn about the magnetic structure of the films and the mechanism of magnetization reversal consisting of an inhomogeneous rotation of the magnetization vector.     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.     

Al掺杂ZnO薄膜的厚度对其结构及磁学性能的影响

采用直流磁控共溅的方法在玻璃基底上制备了不同厚度的Al掺杂ZnO薄膜,并在真空和空气中分别退火.利用X射线衍射仪(XRD)和物理性能测量仪(PPMS)对系列薄膜的结构和磁性进行了表征.XRD结果显示:随着膜厚的增加,晶粒尺寸逐渐增大,薄膜的内应力逐渐减小.在空气退火的薄膜样品中观察到了室温的铁磁性,薄膜的饱和磁化强度M_s 随着膜厚的增加而增大,而矫顽力H_c却随着膜厚的增加而减小. 关键词： Al掺杂ZnO薄膜 薄膜厚度 应力 铁磁性     

Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Sc-doped YIG films were grown on (1 1 1) oriented GGG crystalline substrate with disorientation angle within the range 0-25′. Sc³⁺ ion substitution was varied within the range 0.25-0.3 per formula unit. The films demonstrate different types of surface morphology versus film growth rate and substrate disorientation. Conditions for existence of these types of the surface morphology were defined. The field dependence of magnetic susceptibility at magnetization reversal in film plane and Faraday rotation at wavelength 633 nm for a magnetic field applied in perpendicular direction were measured to characterize the films grown. Films with “mirror-like” surface demonstrate a planar magnetization at room temperature.     

Structural and magnetic properties of ion-beam deposited NiFe/Co-oxide bilayers

The structural and magnetic properties of NiFe/Co-oxide bilayers were studied. XRD investigation indicates the NiFe (Permalloy) layers (a= 3.53 Å) grow with a (111) preferred orientation. The Co-oxide layers were fabricated with oxygen content in the deposition assist beam ranging from 8% (rock-salt CoO, a= 4.27 Å) to 34% (spinel Co3O4, a= 8.21 Å). Both the coercivity Hc and exchange bias field Hex closely follow an inverse NiFe thickness relationship. A strong temperature dependence of Hc and Hex is found in these NiFe/Co-oxide bilayers. At T= 289 K, the NiFe/CoO film exhibits an enhanced Hc relative to pure NiFe/Co or NiFe/Co3O4 bilayers, an indication of exchange coupling between the NiFe and CoO phases. At T= 10 K, the NiFe/Co3O4 film exhibits an exchange-bias loop shift of Hex∼- 200 Oe that persists to temperatures greater than 30 K (the Néel temperature of bulk Co3O4). The transition temperature of the Co3O4 film component has increased above the bulk value via exchange coupling with the permalloy. Results indicate that the exchange coupling interaction between FM and AFM layers are responsible for both enhanced coercivity and cross-tie domains.     

As-grown preparation of FePt-ordered alloy thin films from Pt/Fe bi-layered structure

A novel method to fabricate FePt-ordered alloy thin films with (0 0 1) preferential orientation from Pt/Fe bi-layered films has been developed. It is able to omit post-annealing with a furnace, and the whole process can be conducted in a chamber without exposing samples to air. In this method, the inter-diffusion and the hetero-epitaxial relation between Fe and Pt are key factors to attain an FePt-ordered alloy thin film with (0 0 1) preferential orientation. An FePt-ordered alloy thin film with (0 0 1) preferential orientation fabricated from Pt[3 nm]/Fe[3 nm] bi-layer employing this method exhibited a relatively large coercivity of 5.6 kOe and high squareness ratio of 0.94 on perpendicular magnetization property. This novel method has a potential to fabricate FePt-based perpendicular magnetic recording media more easily than several conventional methods.     

Perpendicular magnetic anisotropy in Co50Pt50 and Co50Pt50 ? x Pd x films

Atomic ordering and its effect on the perpendicular magnetic anisotropy and coercive force in Co₅₀Pt₅₀ and Co₅₀Pt_{50 − x} Pd _x (x = 3–10 at %) alloy films are investigated. The dependence of the coercive force on the film thickness is studied. It is shown that thin films of the ordered alloys become magnetically uniaxial with the easy magnetic axis normal to the plane of the film. Such films can be used for magnetic and thermomagnetic data recording and storage.     

Influence of induced uniaxial anisotropy on the domain structure and phase transitions of yttrium-iron garnet films

The effect of induced uniaxial anisotropy on the properties and parameters of the domain structure and phase transitions in yttrium-iron garnet (YIG) films is investigated. Based on the measurements and the derived formulas we determine the difference between the magnetization and the uniaxial anisotropy field for each of the films. We have also measured the parameters of the domain structures and phase transitions of the films for the magnetization parallel and perpendicular to the projections of the [111] crystallographic axes onto the plane of the film. We find that films of pure YIG films grown in (111) are characterized by the existence of some critical value of the uniaxial anisotropy field. It is found that for films in which the uniaxial anisotropy field is larger than this critical value and films in which it is less than this critical value, such parameters of the domain structures as the ratio of the width of the domains to the film thickness, the orientation of the magnetization of the domains, the orientation of the domain boundaries, and the magnitudes of the phase transition fields differ substantially. Fiz. Tverd. Tela (St. Petersburg) 41, 2034–2041 (November 1999)     

Unusual characteristics of the spin-wave mechanism of domain-wall motion in iron-garnet films with orthorhombic magnetic anisotropy

The extraordinary dynamic properties of single-crystal iron garnet films with magnetic anisotropy in the plane of the film, specifically unidirectional anisotropy of the domain-wall velocity, are explained on the basis of a mechanism of domain-wall motion that incorporates local rotation of the magnetization vector ahead of the moving domain wall, induced by spin waves radiated from the wall and by anisotropy of the dissipative properties of the single-crystal iron garnet film in its plane. Fiz. Tverd. Tela (St. Petersburg) 39, 1421–1427 (August 1997)     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

Magnetization anisotropy of Ni dots with several tens of nanometer diameter

We have studied the magnetization of Ni dot with 50 to 70 nanometer diameter and 12 nanometer thickness using a magnetic force microscopy with an in-plane magnetic field. The Ni dots were prepared using self-assembled dot patterns with poly (styrene-b-methyl mathacrylate) diblock copolymers on Ni film and ion etching. It was found that the remanent magnetization direction of the dot was perpendicular to the plane as prepared. From the vibrating sample magnetometer measurement, a hysteresis loop was found in the perpendicular magnetization. When an in-plane external magnetic field was applied, the magnetization was rotated into a horizontal direction with low coercivity along the field direction.