An All-Thin-Film Electrochromic Device Composed of MoO3--LiBSO--NiOx Multilayer Structure

An all-thin-tilm （ATF） electrochromic device for modulating the optical transmittance is manufactured using magnetron sputtering. The devices consists of MoO3 as the main electrochromic layer, LiBO2 ＋Li2SO4 （LiBSO） as the ion conductor layer, and NiOx as the complementary electrochromic layer. Glass covered with indium tin oxide （ITO） is used as the substrate and the ITO film is used as the bottom electrode. The ITO film deposited on the top of the devices is used as the other electrode. The structure and morphology of the films are characterized by x-ray diffraction （XRD） and scanning electron microscopy （SEM）. The devices exhibit good optical properties with low transmittance values in the coloured state, and the optical modulation is measured by spectrophotometer in the wavelength range from 400 to 800nm. The average visible light transmittance reaches 50.2% and 3.7% in bleached and coloured state, respectively. The results indicate that such a monolithic system has great potential to be applied in smart windows.     

Study of top and bottom contact resistance in one organic field-effect transistor

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated,in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor.With the facility of the novel structure,the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied.The hybrid contact devices showed similar characteristics with the top contact configuration devices,which provide helpful evidence on the lower contact resistance of the top contact configuration device.The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.     

Top contact organic field effect transistors fabricated using a photolithographic process

This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho-tolithographic process.The semiconductor layer is protected by a passivation layer.Through photolithographic and etching processes,parts of the passivation layer are etched off to form source/drain electrode patterns.Combined with conventional evaporation and lift-off techniques,organic field effect transistors with a top contact are fabricated suc-cessfully,whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.     

Experimental and theoretical analyses of package-on-package structure under three-point bending loading

<正>High density packaging is developing toward miniaturization and integration,which causes many difficulties in designing,manufacturing,and reliability testing.Package-on-Package(PoP) is a promising three-dimensional highdensity packaging method that integrates a chip scale package(CSP) in the top package and a fine-pitch ball grid array (FBGA) in the bottom package.In this paper,in-situ scanning electron microscopy(SEM) observation is carried out to detect the deformation and damage of the PoP structure under three-point bending loading.The results indicate that the cracks occur in the die of the top package,then cause the crack deflection and bridging in the die attaching layer.Furthermore,the mechanical principles are used to analyse the cracking process of the PoP structure based on the multi-layer laminating hypothesis and the theoretical analysis results are found to be in good agreement with the experimental results.     

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator （Ge-on-SOI） PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition （UHV-CVD）. The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.     

Schottky barrier MOSFET structure with silicide source/drain on buried metal

In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal （SSDOM）. The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel ease. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V （for ErSi） and the bottom barrier is 0.6 eV （for CoSi2）. Compared with the corresponding conventional Schottky barrier MOSFET structures （CSB）, the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability （1.2 mA/μm at Vds = 1 V, Vgs = 2 V） and the high Ion/Imin ratio （10^6） are both achieved by applying the SSDOM structure.     

Photon tunneling and transmittance resonance through a multi-layer structure with a left-handed material

This paper investigates the photon tunneling and transmittance resonance through a multi-layer structure including a left-handed material(LHM).An analytical expression for the transmittance in a five-layer structure is given by the analytical transfer matrix method.The transmittance is studied as a function of the refractive index and the width of the LHM layer.The perfect photon tunneling results from the multi-layer structure,especially from the relation between the magnitude of the refractive index and the width of the LHM layer and those of the adjoining layers.Photons may tunnel through a much greater distance in this structure.Transmittance resonance happens,the peaks and valleys appear periodically at the resonance thickness.For an LHM with inherent losses,the perfect transmittance is suppressed.     

Scaling properties of phase-change line memory

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.     

ab initio Studies on Molecular Conductor (BEDSe-TTF)2[Fe(CN)5NO]

In this paper the ab initio study using pseudopotential plane wave method with the local spin density functional approximation is presented for the molecular conductor (BEDSe-TTF)2[Fe(CN)5NO]. The mean electronic density distributions are obtained, and we find that the extended π orbital of the selenium does not affect the properties of material as assumed in other papers and the “side-by-side“ type S...S interaction is the primary interaction between donors. From band structure calculations we analyze the influence of the NO groups on the electronic structure and magnetic properties of molecule. It is shown that the itinerant electrons important to electronic properties in these types of hybrids are delocalized electrons contributed by NO groups, instead of by the 3d electrons of Fe. Additionally, we have found that the localized magnetic moment is also contributed by the NO groups in this molecular conductor. From total energy calculations the molecular structure with the lowest energy is found due to the interaction between split spins, and the particular positions of the NO groups are obtained.     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

Aspects of the dielectric upstream region barrier discharge in a plasma jet with configurations

A plasma column with a length of about 65 cm is generated in the upstream region of a plasma jet using dielectric barrier discharge configurations. The effects of experimental parameters such as the amplitude of the applied voltage and the driving frequency are investigated in aspects of the plasma column by the optical method. Results show that both the plasma length and the propagating velocity, as well as the discharge current, increase with the increase in the applied voltage or its frequency. The discharge mechanism is analysed qualitatively based on streamer theory, where photo-ionization is important. Furthermore, optical emission spectroscopy is used to investigate the electric field intensity of the upstream region.     

Analytical investigation velocity fields on mean and turbulent of a plane jet

This paper analyses the downstream developments of the mean and the turbulent velocity fields of a plane jet. Based on the conservation of mass and the conservation of momentum, the mean-velocity half width （reflecting the jet spread rate） and the relative mass flow rate （jet entrainment） are related to the decay rate of the centreline mean velocity. These relations are not subject to self-preservation. Both analytical and experimental results suggest that the jet spread rate （K1） and the entrainment rate （K3） （and thus the decay rate K2） can be well estimated from the centreline velocity, i.e., K1 ≈ 0.6K2 and K3 ∝K2. The effect of initial mean velocity and RMS velocity profiles on the downstream mean velocity field appears to be embodied in the constants K1 K2 and K3. The analytical relationship for the self-preserving Reynolds shear stress, obtained for the first time, works well.     

Large eddy simulations of a circular orifice jet with and without a cross-sectional exit plate

The effect of a cross-sectional exit plane on the downstream mixing characteristics of a circular turbulent jet is in- vestigated using large eddy simulation （LES）. The turbulent jet is issued from an orifice-type nozzle at an exit Reynolds number of 5 ×104. Both instantaneous and statistical velocity fields of the jet are provided. Results show that the rates of the mean velocity decay and jet spread are both higher in the case with the exit plate than without it. The existence of the plate is found to increase the downstream entrainment rate by about 10% on average over the axial range of 8-30de （exit diameter）. Also, the presence of the plate enables the formation of vortex rings to occur further downstream by 0.5-1 .Ode. A physical insight into the near-field jet is provided to explain the importance of the boundary conditions in the evolution of a turbulent jet. In addition, a method of using the decay of the centreline velocity and the half-width of the jet to calculate the entrainment rate is proposed.     

绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响

通过对OTFT绝缘层SiO_2表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式,制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大,但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后,器件的迁移率比修饰前分别增大了4倍和9倍,而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm~2/(V·s),开关比可达6.0×10~6。     

High transverse momentum correlations in STAR

Azimuthal correlations of charged hadrons with transverse momenta above 2 GeV/c are measured relative to ≥ GeV/c trigger particle in p+p and Au+Au at $\sqrt {s_{NN} } = 200$ GeV in STAR. The correlations exhibit small relative azimuthal angle correlations characteristic of jets. The p+p and peripheral Au+Au data exhibit a peak on the opposite side of the jet indicating the presence of hard scattering in the form of di-jets. The away-side jet disappears for the most central Au+Au collisions, suggesting jet quenching in a dense medium.     

First search for multijet resonances in sqrt(s) = 1.96 TeV pp collisions

We present the first model independent search for three-jet hadronic resonances within multijet events in sqrt(s) = 1.96 TeV pp collisions at the Fermilab Tevatron using the CDF II detector. Pair production of supersymmetric gluinos and squarks with hadronic R-parity violating decays is employed as an example of a new physics benchmark for this signature. Selection criteria based on the kinematic properties of an ensemble of jet combinations within each event help to extract signal from copious QCD background. No significant excess outside the top quark mass window is observed in data with an integrated luminosity of 3.2 fb(-1). We place 95% confidence level limits on the production cross section σ(pp → XX')×BR(gg → 3 jet + 3 jet) where X, X' = g, q, or q, with q, q → g + jet, as a function of gluino mass, in the range of 77 GeV/c2 to 240 GeV/c2.     

喷墨打印和旋涂法制备有机电致发光显示器件中空穴注入及发光层的比较研究

比较了喷墨印刷和旋涂PEDOT:PSS薄膜的表面性能,发现喷涂PEDOT:PSS薄膜上印有发射层油墨后,其表面性能有很大差异。在喷墨打印PEDOT:PSS膜的表面上只发现了大量的和类山状的聚合物颗粒。进一步的研究表明,形态的差异源于润湿性的不同。揭示了喷墨打印和旋涂对膜性能的不同影响,从而在喷墨打印PEDOT:PSS膜上构建了更精细的结构。     

Search for V+A current in top-quark decays in pp collisions at sqrts=1.96 TeV

We report an upper limit on the fraction of V+A current, fV+A, in top-quark decays, using approximately 700 pb-1 of pp[over ] collisions at sqrts=1.96 TeV acquired by the upgraded Collider Detector at Fermilab. For the decay t-->Wb-->lnub (where l=e or micro), the invariant mass of the charged lepton and the bottom quark jet is sensitive to the polarization of the W boson. We determine fV+A=-0.06+/-0.25 given a top-quark mass of 175 GeV/c2. We set an upper limit on fV+A of 0.29 at the 95% confidence level, an improvement by a factor of 2 on the previous best direct limit.     

Direct fabrication of copper patterns by reactive inkjet printing

Reactive inkjet printing (RIP) was applied to fabricate arbitrary copper (Cu) patterns. RIP prints reactive inks which can provide desired materials after the reaction on a substrate. Here, Cu precursors and reducing agents were dissolved together in one solution as a printable ink instead of conventional Cu nanoparticle inks. The prepared reactive ink was applied to the RIP method to provide dot arrays, lines, and films of Cu. The synthesis of Cu was confirmed to occur successfully by thorough analysis. The RIP method can reduce the process cost and resolve critical drawbacks of the conventional inkjet printing such as a nozzle clogging problem. Furthermore, utilizing reactive precursor inks broadens the choice of materials that can be processed by inkjet printing.     

Inkjet printed PEDOT:PSS/MWCNT nano‐composites with aligned carbon nanotubes and enhanced conductivity

Conductive patterns of poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/multi‐walled carbon nanotube (MWCNT) composites were deposited on glass substrates using a drop on demand (DOD) inkjet printer, with the concentration of CNT varied from 0.01 wt% to 0.05 wt%. We show that by increasing the concentration of the nanotubes in the ink, percolated networks of well distributed carbon nanotubes in the printed samples can be achieved. Moreover, the orientation of the nanotubes in the printed sample can be controlled using a novel simple approach. The impact of the nanotube alignment on the conduction properties of inkjet printed nano‐hybrid materials is studied and shown in this Letter. Samples with aligned nanotubes show a 53% enhanced conductivity in comparison with the randomly oriented nanotubes. The results show that the electrical performance of the nano‐composite can be improved further by controlling the dispersion and orientation of the nano‐filler in the printed samples.