Magnetoelectric effect in layered composites with arc shape

Magnetoelectric (ME) layered Ni/PZT/Ni composites with arc shape have been prepared by using electroless deposition. The ME effect is measured by applying both constant and alternating magnetic fields in longitudinal and transverse directions. The longitudinal ME voltage coefficient is much larger than the transverse one. With the increase of arc length or decrease of curvature, the resonance frequency of layered arc Ni/PZT/Ni composites gradually decreases, while the maximum of the ME voltage coefficient of the composites increases monotonously. The influence of the arc length and the curvature on ME coupling is discussed. The flat interface between the ferromagnetic and the piezoelectric phases in layered ME composites is believed to provide large ME voltage coefficient.     

Multiple broadband magnetoelectric response in Terfenol-D/PZT structure

In this paper, a novel magnetoelectric(ME) composite structure is proposed, and the ME response in the structure is measured at the bias magnetic field up to 2000 Oe(1 Oe = 79.5775 A·m~(-1)) and the excitation frequency of alternating magnetic field ranging from 1 kHz to 200 kHz. The ME voltage of each PZT layer is detected. According to the measurement results, the phase differences are observed among three channels and the multi-peak phenomenon appears in each channel. Meanwhile, the results show that the ME structure can stay a relatively high ME response within a wide bandwidth.Besides, the hysteretic loops of three PZT layers are observed. When the frequency of alternating current(AC) magnetic field changes, the maximum value of ME coefficient appears in different layers due to the multiple vibration modes of the structure. Moreover, a finite element analysis is performed to evaluate the resonant frequency of the structure, and the theoretical calculating results accord well with the experimental results. The experiment results suggest that the proposed structure may be a good candidate for designing broadband magnetic field sensors.     

Equivalent circuit model including magnetic and thermo sources for the thermo–magneto–electric coupling effect in magnetoelectric laminates

The nonlinear thermo–magneto–mechanical magnetostrictive constitutive and the linear thermo–mechanical-electric piezoelectric constitutive are adopted in this paper. The bias magnetic field and ambient temperature are equivalent to a magnetic source and a thermo source, respectively. An equivalent circuit, which contains a magnetic source and a thermo source at the input, for the thermo–magneto–electric coupling effect in magnetoelectric(ME) laminates, is established. The theoretical models of the output voltage and static ME coefficient for ME laminates can be derived from this equivalent circuit model. The predicted static ME coefficient versus temperature curves are in excellent agreement with the experimental data available both qualitatively and quantitatively. It confirms the validity of the proposed model. Then the models are adopted to predict variations in the output voltages and ME coefficients in the laminates under different ambient temperatures, bias magnetic fields, and the volume ratios of magnetostrictive phases. This shows that the output voltage increases with both increasing temperature and increasing volume ratio of magnetostrictive phases; the ME coefficient decreases with increasing temperature; the ME coefficient shows an initial sharp increase and then decreases slowly with the increase in the bias magnetic field, and there is an optimum volume ratio of magnetostrictive phases that maximize the ME coefficient.This paper can not only provide a new idea for the study of the thermo–magneto–electric coupling characteristics of ME laminates, but also provide a theoretical basis for the design and application of ME laminates, operating under different sensors.     

Edge Particle Flux with Temperature Fluctuation in the HL-2A Tokamak

Electron temperature, density, plasma potential and their fluctuation profiles at edge plasmas are measured simultaneously with a reciprocating probe system in HL-2A. The analysis results of four-tip data indicate that the temperature fluctuation has relative amplitude of 10-15%, gives more contribution to particle flux in lower （0- 25 kHz） and higher frequency （50-250 kHz） ranges. The coherence between temperature fluctuations and density or potential fluctuations implies that their coupling will impact anomalous transport. The measured diffusion coefficient is about three times of the Bohm diffusion coefficient when considering the temperature fluctuation. The particle flux with temperature fluctuation is discussed in HL-2A for the first time.     

A Strip-Loading Optical Waveguide Using Well Poled Stability Organic/Inorganic Hybrid Materials

An optical waveguide for a polymer modulator based on organic/inorganic hybrid electro-optic （EO） materials is designed and fabricated by utilizing a strip-loading structure. This hybrid material has a controllable refractive index, high EO coefficient and good poled stability, which are suitable for the EO modulators and switches. The embedded waveguide made of the above EO material can reduce the coupling loss. The light is coupled into the guided-core layer and then undergoes a transition from the buried waveguide into the EO material. Obvious modulation is observed by application of ac voltage to the EO material. The measured Vπ of co-planar waveguide （CPW） is 5 V for the Mach-Zehnder （MZ） modulator in length of 3.5cm.     

Comprehensive studies on dielectric properties of p-methoxy benzylidene p-decyl aniline with function of temperature and frequency in planar geometry: A potential nematic liquid crystal for display devices

The dielectric properties of the nematic mesophase, p-methoxy benzylidene p-decyl aniline(MBDA), measured in planar geometry with a function of frequency and temperature are investigated in detail. The complex dielectric permittivity(ε' and ε') is also studied at a bias voltage of 10 V for planar aligned sample cell of nematic mesophase. The dielectric permittivity with bias voltage attains a higher( 2 times) value than that without bias voltage at a temperature of 56℃,which is due to the fact that the linking group of nematic molecules is internally interacted with an applied bias voltage.This is supported by observing an enhanced dielectric permittivity of nematic liquid crystal(LC) in the presence of bias voltage, which can be fully explained as the increasing of the corresponding dipole moment. The dielectric relaxation behaviors of nematic LC are also demonstrated for planar aligned sample cell. The remarkable results are observed that the relaxation frequency shifts into low frequency region with the increase of the bias voltage applied to the planar aligned sample cells. The dielectric relaxation spectra are fitted by Cole–Cole nonlinear curve fitting for nematic mesophase in order to determine the dielectric strength.     

Tunable Ba0.5Sr0.5TiO3 film bulk acoustic resonators using SiO2/Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias（ 45 V） while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum（Mo） as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Numerical Studies of s-Polarized Surface Plasmon Polaritons at the Interface Associated with Metamaterial

The s-polarized surface plasmon polaritons （SPPs） at the interface between dielectric and metamaterial are studied, and the dispersion relations of SPPs are also presented. Using the prism coupling mechanism, we obtain the attenuated total reflection （ATR） spectra in the frequency regime based on the Otto configuration. It is found that the thickness of the dielectric in the configuration and the small damping of the metamaterial affect the coupling strength significantly without changing the coupling frequency. Furthermore, the optimized thickness of the dielectric decreases with a larger damping, and the coefficient F of the metamaterial also determines the coupling frequency and strength.     

On the low frequency characteristics of head-related transfer function

A method to correct the measured head-related transfer functions （HRTFs） at low frequency was proposed. By analyzing the HRTFs from the spherical head model at low frequency, it is proved that below the frequency of 400 Hz, magnitude of HRTF is nearly constant and the phase is a linear function of frequency both for the far and near field. Therefore, if the HRTFs above 400 Hz are accurately measured by experiment, it is able to correct the HRTFs at low frequency by the theoretical model. The results of calculation and subjective experiment show that the feasibility of the proposed method.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.