The influence of Cr-content on curie temperature,crystallization temperature and room temperature electrical resistivity of Fe85−xCrxB15 metallic glasses

Amorphous ribbons of nominal compositions Fe_85-xCr_xB₁₅,_x =5, 10, 15 and 20 at%, were produced by a continuous liquid quenching technique. The Curie temperatures were measured using several methods. A quite large decrease with increasing Cr-content is observed: 20 K/at% Cr around 300 K. The Curie temperatures are compared with those of similar metallic glass systems based on Fe and Cr reported in the literature. The crystallization temperatures determined from measurements of the electrical resistivity versus temperature at a heating rate of ≈10K/min are obtained as a function of Cr-content, showing an increase in stability between 10 and 15 at% Cr. Finally, the room temperature (≈295K) electrical resistivities of as quenched and crystallized samples are given. The resistivity of the as quenched ribbons in nearly independent of Cr-content (≈128 μΩ cm) while the resistivity of the crystallized ribbons show an increase of ≈2.7 μΩ cm/at% Cr.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Optoelectronic properties of Cu1−xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm²/V s and 1.56 × 10¹⁸ to 4.04 × 10¹⁹ cm⁻³, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu_1−xPt_xFeO₂ delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Structure and d.c. conductivity of amorphous Si1−xSnx alloys

Amorphous Si_1?xSn_x alloys have been prepared by vapor deposition at a pressure of about 10^?8 Torr on substrates maintained at 77 K. Density measurements and electron diffraction show that Sn atoms are substituted for Si in a random continuous network. The d.c. resistivity of samples of stabilized structure is correctly described by the variable range hopping formula. Structural changes are revealed by the variation of the resistivity at 77 K of samples annealed from 77 K to the crystallization temperature.     

A potential Co36Fe36Si4B20Nb4 nanocrystalline alloy for high temperature soft magnetic applications

The paper addresses the structural, crystallization, soft magnetic and Curie temperature behaviour of Co₃₆Fe₃₆Si₄B₂₀Nb₄ alloy. The material, prepared in the form of ribbons by melt-spinning technique, was amorphous in the as-cast state. Differential scanning calorimetry (DSC) showed two stages of crystallization whereas thermal variation of electrical resistivity (TER) carried out to a higher range of temperature indicated three stages of crystallization. The first crystallization stage, which occurred at 845?K and 825?K in DSC and TER, respectively, was due to the formation of nanophase (CoFe)₂Si as evidenced by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The formation of these nanoparticles reduced the magnetocrystalline anisotropy, thereby revealing good soft magnetic properties in the samples annealed between 825?K and 875?K with coercivity less than 49.9?A?m^?1 (627?mOe) and susceptibility?～?0.72?×?10³. In this optimum nanocrystalline state, the material also exhibited a high Curie temperature above 1100?K, opening the scope of the present nanocrystalline alloy for high temperature applications.     

Electron transport properties of Co71−xFexCr7Si8B14 (x=0, 2, 3.2, 4, 6,8 and 12 at%) amorphous alloys during devitrification

The investigation addresses the electron transport properties of Co_71−xFe_xCr₇Si₈B₁₄ (x=0, 2, 3.2, 4, 6, 8 and 12 at%) amorphous alloys. The variation in electrical resistivity of as-cast amorphous materials with thermal scanning from room temperature to 1000 K was measured. The CoFe-based alloys revealed an initial decrease in temperature coefficient of resistivity (TCR), a characteristic of spin-wave phenomena in glassy metallic systems. This behaviour in the present alloys was in a sharp contrast to the Co-based amorphous materials that indicate the drop in resistivity much below room temperature. In the studied alloys, the variation in initial TCR values and the full-width at half-maxima determined from X-ray diffraction of as-quenched materials exhibited a similar trend with increasing Fe content, indicating the compositional effect of near neighbouring atoms. After the initial decrease in resistivity, all the alloys indicated a subsequent increase at T_min. The Curie temperature (T_C), which was measured from thermal variation of ac susceptibility showed non-monotonic change with Fe content. In the temperature range between T_min and T_C the relative scattering by electron-magnon and electron-phonon resulted in the non-monotonic change in Curie temperature. At crystallization onset (T_X1) all the alloys except there with X=6, showed a sharp decrease in electrical resistivity which was attributed to ordering phenomena. In contrast to this resistivity decrease, X=6 alloy exhibited a drastic increase in resistivity around T_X1 observed during amorphous to nanocrystalline transformation. Such nanocrystalline state was observed by Transmission electron microscopy.     

Electrical resistivity of narrow-band ferromagnetic Fe1−xCoxS2

The electrical resistivity of metallic ferromagnet Fe_1−xCo_xS₂ shows an anomalous temperature dependence below Curie point. As the temperature lowers, the resistivity increases for x < 0.9, while it decreases for x > 0.9 with a hump.     

Thermal transport properties in the normal state of CaAlxSi2−x superconductors

Normal state electrical and thermal properties, including electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) of the CaAl_xSi_2−x (x=0.9-1.2) system were investigated. It is found that the electrical resistivity and Seebeck coefficient exhibit a typical metallic character throughout the temperature range investigated, and the metallicity of this series is enhanced with increase in Al/Si ratio. On the other hand, the thermal conductivity shows a weak temperature variation at low temperatures, whereas κ follows a T²-dependence for T>150 K. Analysis of the electronic thermal resistivity based on Klemen’s model reveals that the scattering of electrons from the defects and static imperfections becomes dominant as the temperature approaches T_c. These results are discussed in the light of simultaneous existence of various crystal structures and development of ultra-soft phonon mode recently observed in the CaAlSi system.     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Low temperature resistivities of FexNi80-xP14B6 metallic glasses

The resistivities of six Fe_xNi_80-xP₁₄B₆ alloys have been measured between 1.5 and 50 K. It is found that the resistivity variations both below and above the resistivity minima depend on the transition metal composition. The room temperature coefficients of the resistivity indicate the existence of the magnetic contribution to the resistivity.     

Magnetic and related properties of the solid solution CeCuxGa4−x

Physical properties of polycrystalline samples of CeCu_xGa_4−x (x = 0.2–1.4), crystallizing in the tetragonal BaAl₄-type structure (space group I 4/mmm), were studied by means of X-ray powder diffraction, magnetization, specific heat, electrical resistivity and magnetoresistivity measurements in wide temperature and magnetic fields ranges. The unit-cell volume of the system was found to decrease with increasing x (in total by about 4%) but the magnetic moments of Ce³⁺ ions remain localized in the whole x-range studied. The alloys exhibit ferromagnetic order at low temperatures, which manifests itself as distinct and relatively sharp anomalies in all the temperature characteristics measured. The ordering temperature decreases with increasing the Cu content from 5.5(1) K for x = 0.2 down to 1.35(5) K for x = 1.4, and the electrical transport properties of the system show some features characteristic of Kondo lattices.     

Electrical resistivity and thermal conductivity of UP1−xSx

UP, US, and their solid solutions of several compositions were prepared, and the electrical resistivities of these samples were measured from liquid nitrogen temperature to 1000 K and the thermal diffusivities from 300 to 1000 K. It was shown that the resistivity of UP_1?xS_x at the paramagnetic region arose mainly from the scattering of conduction electrons by disordered spins localized at uranium ion sites. The resistivity of UP_0.4S_0.6 showed another anomaly below the transition temperature. A gentle hump of the thermal diffusivity of UP was observed at about 650 K. This was concluded to be due to the anomalous negative temperature coefficient of electrical resistivity observed above the Néel temperature up to about 550 K. The composition dependence of thermal conductivity of UP_1?xS_x was compared with that of UC_1?xN_x by separating the total conductivity into electronic and phonon contributions.     

Structural, magnetic and magnetotransport behavior of La0.7SrxCa0.3−xMnO3 compounds

A systematic investigation of the structural, magnetic and electrical properties of a series of nanocrystalline La_0.7Sr_xCa_0.3−xMnO₃ materials, prepared by high energy ball milling method and then annealed at 900 °C has been undertaken. The analysis of the XRD data using the Win-metric software shows an increase in the unit cell volume with increasing Sr ion concentration. The La_0.7Sr_xCa_0.3−xMnO₃ compounds undergo a structural orthorhombic-to-monoclinic transition at x=0.15. Electric and magnetic measurements show that both the Curie temperature and the insulator-to-metal transition temperature increase from 259 K and 253 K correspondingly for La_0.7Ca_0.3MnO₃ (x=0) to 353 K and 282 K, respectively, for La_0.7Sr_0.3MnO₃ (x=0.3). It is argued that the larger radius of Sr²⁺ ion than that of Ca²⁺ is the reason to strengthen the double-exchange interaction and to give rise to the observed increase of transition temperatures. Using the phenomenological equation for conductivity under a percolation approach, which depends on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the resistivity versus temperature data measured in the range of 50-320 K and found that the activation barrier decreased with the raising Sr²⁺ ion concentration.     

Superconductivity in the neptunium Chevrel phase Np1+xMo6Se8

The neptunium based Chevrel phases Np_1.0Mo₆Se₈ have been synthesized and their magnetic susceptibility and electrical resistivity have been measured from 3 K to room temperature. These compounds are superconductors with a critical temperature T_c = 5.6 (0.1) K. The magnetic susceptibility shows large crystal field effects with probably an important non-cubic component.     

Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

Effect of spin fluctuations on the electrical resistivity in the pressure-induced metallic phase of 7 at.% Co-doped NiS2

The electrical resistivity measurements were made from 4.2 K to room temperature on 7 at.% Co-doped NiS₂ at pressures from 19 to 71 kbar. T²-dependence of electrical resistivity due to the spin fluctuations was found, and the pressure dependence of its coefficient was determined.     

High temperature magnetic ordering in La2RuO5

Magnetic susceptibility, heat capacity and electrical resistivity measurements have been carried out on a new ruthenate, La₂RuO₅ (monoclinic, space group P2₁/c) which reveal that this compound is a magnetic semiconductor with a high magnetic ordering temperature of 170 K. The entropy associated with the magnetic transition is 8.3 J/mol K close to that expected for the low spin (S=1) state of Ru⁴⁺ ions. The low temperatures specific heat coefficient γ is found to be nearly zero consistent with the semiconducting nature of the compound. The magnetic ordering temperature of La₂RuO₅ is comparable to the highest known Curie temperature of another ruthenate, namely, metallic SrRuO₃, and in both these compounds the nominal charge state of Ru is 4+.     

Electrical properties and spin fluctuations studies of Y(Co1−xNix)2 compounds

Synthesis by arc melting, the structural and the electric properties of Y(Co_1−xNi_x)₂ alloys were studied by X-ray diffraction (XRD) and four probe dc electrical measurements. XRD analysis (300 K) shows that all samples crystallize in a cubic MgCu₂-type structure. The lattice parameters linearly decrease with Ni content. Electrical resistivity for the Y(Co_1−xNi_x)₂ intermetallic series was measured in a temperature range of 15-1100 K. The parameters involved in the dependence of resistivity on temperature were determined. Residual, phonon and spin fluctuations resistivity were separated from electrical resistivity using both the Matthiesen formula and the Bloch-Gruneisen formula. The spin fluctuations resistivity of the Y(Co_1−xNi_x)₂ series are compared to the mean square amplitudes of spin fluctuations previously calculated by the Linear Muffin Tin Orbital-Tight Binding Approach method for these series in the literature. The contribution of spin fluctuations to total resistivity ρ_sf is proportional to T² at low temperatures. The proportionality parameter strongly reduces across the Y(Co_1−xNi_x)₂ series.