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 共查询到19条相似文献,搜索用时 125 毫秒
1.
赵凤岐  宫箭 《中国物理快报》2007,24(5):1327-1330
The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-spaee LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible.  相似文献   

2.
We study theoretically the ground state energy of a polaron near the interface of a polar-polar semiconductor by considering the Rashba spin-orbit (SO) coupling with the Lee-Low-Pines intermediate coupling method. Our numerical results show that the Rashba SO interaction originating from the inversion asymmetry in the heterostructure splits the ground state energy of the polaron. The electron arealdensity and vector dependence of the ratio of the SO interaction to the total ground state energy or other energy composition are obvious. One can see that even without any external magnetic field, the ground state energy can be split by the Rashba SO interaction, and this split is not a single but a complex one. Since the presents of the phonons, whose energy gives negative contribution to the polaron‘s,the spin-splitting states of the polaron are more stable than electron‘s.  相似文献   

3.
We study theoretically the ground state energy of a polaron near the interface of a polar-polar semiconductor by considering the Rashba spin-orbit (SO) coupling with the Lee-Low-Pines intermediate coupling method. Our numerical results show that the Rashba SO interaction originating from the inversion asymmetry in the heterostructure splits the ground state energy of the polaron. The electron area/density and vector dependence of the ratio of the SO interaction to the total ground state energy or other energy composition are obvious. One can see that even without any external magnetic field, the ground state energy can be split by the Rashba SO interaction, and this split is not a single but a complex one. Since the presents of the phonons, whose energy gives negative contribution to the polaron's, the spin-splitting states of the polaron are more stable than electron's.  相似文献   

4.
We investigate the influence of a perpendicular magnetic field on a bound polaron near the interface of a polar-polar semiconductor with Rashba effect. The external magnetic field strongly changes the ground state binding energy of the polaron and the Rashba spin-orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splits the ground state binding energy of the bound polaron. In this paper, we have shown how the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity, the wave vector of the electron and the electron areal density, taking into account the SO coupling. Due to the presence of the phonons, whose energy gives negative contribution to the polaron's, the spin-splitting states of the bound polaron are more stable, and we find that in the condition of week magnetic field, the Zeeaman effect can be neglected.  相似文献   

5.
丁朝华  肖景林 《中国物理 B》2011,20(9):97104-097104
The Hamiltonian of a quantum rod with a boundary is presented after a coordinate transformation that changes the original ellipsoidal boundary into a spherical one. We then study the effect of temperature on the vibrational frequency and the ground state binding energy of the strong-coupling polaron in the rod. The two quantities are expressed as functions of the aspect ratio of the ellipsoid, the transverse and the longitudinal effective confinement lengths, the temperature and the electron—phonon coupling strength by linear combination operator and unitary transformation methods. It is found that the vibrational frequency and the ground state binding energy will increase rapidly with decreasing transverse and longitudinal effective confinement lengths. They are increasing functions of the electron—phonon coupling strength but become decreasing ones of the temperature and the aspect ratio.  相似文献   

6.
We study the interaction between holes and molecular vibrations on dry DNA by using the extended Firsov's model. The ground state energy, calculated by using two Hilbert spaces, Fock state space and coherent state space, is confirmed. The polaron binding energy, defined with the ground state energy, is 0.014eV, much less than the thermal energy 0.026eV at room temperature 300K, which means that polarons are difficult to form self-trapping at room temperature and Anderson localization will prevent a metallic state on dry DNA. The results are consistent with the available experiments.  相似文献   

7.
We study the energy levels of an electron (or hole) polaron in a parabolic quantum well structure,including the spatial dependence of the effective mass.We also consider the two-mode behaviour of longitudinal optical phonon modes of the ternary mixed crystals in the structure,in the calculation of the effect of the electron phonon interaction.We calculate the ground state,the first excited state and the transition energy of an electron (or hole) in the GaAs/AlxGa1-xAs parabolic quantum well structure.The numerical results show that the electron-phonon interaction obviously affects the energy levels of the electron (or hole),which are in agreement with experimental results.  相似文献   

8.
This paper reports that the ground-state energy of polaron was obtained with strong electron-LO-phonon coupling by using a variational method of the Pekar type in a parabolic quantum dot. Quantum transition is occurred in the quantum system due to the electron-phonon interaction and the influence of temperature. That is the polaron transit from the ground-state to the first-excited state after absorbing a LO-phonon and it causes the change of the polaron lifetime. Numerical calculations are performed and the results illustrate that the ground-state lifetime of the polaron will increase with increasing the ground-state energy of polaron and decrease with increasing the electron-LO-phonon coupling strength, the confinement length of the quantum dot and the temperature.  相似文献   

9.
The migration of a polaron at polymer/polymer interface is believed to be of fundamental importance for the transport and light-emitting properties of conjugated polymer-based light emitting diodes. Based on the one- dimensional tight-binding Su-Schrieffer-Heeger (SSH) model, we have investigated polaron dynamics in a one- dimensional polymer/polymer system by using a nonadiabatic evolution method. In particular, we focus on how a polaron migrates through the conjugated polymer/polymer interface in the presence of external electric field. The results show that the migration of polaron at the interface depends sensitively on the hopping integrals, the potential barrier induced by the energy mismatch, and the strength of applied electric field which increases the polaron kinetic energy.  相似文献   

10.
A theory of an electron affinity for an ionic cluster is proposed both in a quasiclassical approach and with quantization of a polarization electric field in a nanopartiele. A critical size of the cluster regarding in formation of an electron's autolocalized state, dependencies of energy and radius of a polaron on a cluster's size are obtained by a variational method. It has been found that binding energy of the electron in the cluster depends on a eluster's radius but a radius of electron's auto-localization does not depend on the cluster's radius and it equals to the polaron radius in a corresponding infinity crystal. A bound state of the electron in a cluster is possible only if the duster's radius is more than the polaron radius.  相似文献   

11.
纤锌矿GaN/AlxGa1-xN量子阱中极化子能量   总被引:1,自引:1,他引:0  
采用LLP变分方法研究了纤锌矿GaN/AlxGa1-xN量子阱材料中极化子的能级,给出极化子基态能量、第一激发态能量和第一激发态到基态的跃迁能量与量子阱宽度和量子阱深度变化的函数关系。研究结果表明,极化子基态能量、第一激发态能量和跃迁能量随着阱宽L的增大而开始急剧减小,然后缓慢下降,最后接近于体材料GaN中的相应值。基态能量和第一激发态到基态的跃迁能量随着量子阱深度的增加而逐渐增加,窄阱时这一趋势更明显。纤锌矿氮化物量子阱中电子-声子相互作用对能量的贡献比较大,这一值(约40meV)远远大于闪锌矿(GaAs/AlxGa1-xAs)量子阱中相应的值(约3meV)。因此讨论GaN/AlxGa1-xN量子阱中电子态问题时应考虑电子-声子相互作用。  相似文献   

12.
赵凤岐  张敏  李志强  姬延明 《物理学报》2014,63(17):177101-177101
用改进的Lee-Low-Pines变分方法研究纤锌矿In0.19Ga0.81N/GaN量子阱结构中束缚极化子能量和结合能等问题,给出基态结合能、不同支长波光学声子对能量和结合能的贡献随阱宽和杂质中心位置变化的数值结果.在数值计算中包括了该体系中声子频率的各向异性和内建电场对能量和结合能的影响、以及电子和杂质中心与长波光学声子的相互作用.研究结果表明,In0.19Ga0.81N/GaN量子阱材料中光学声子和内建电场对束缚极化子能量和结合能的贡献很大,它们都引起能量和结合能降低.结合能随着阱宽的增大而单调减小,窄阱中减小的速度快,而宽阱中减小的速度慢.不同支声子对能量和结合能的贡献随着阱宽的变化规律不同.没有内建电场时,窄阱中,定域声子贡献小于界面和半空间声子贡献,而宽阱中,定域声子贡献大于界面和半空间声子贡献.有内建电场时,定域声子贡献变小,而界面和半空间声子贡献变大,声子总贡献也有明显变化.在In0.19Ga0.81N/GaN量子阱中,光学声子对束缚极化子能量和结合能的贡献比GaAs/Al0.19Ga0.81As量子阱中的相应贡献(约3.2—1.8和1.6—0.3 meV)约大一个数量级.阱宽(d=8 nm)不变时,在In0.19Ga0.81N/GaN量子阱中结合能随着杂质中心位置Z0的变大而减小,并减小的速度变快.随着Z0的增大,界面和半空间光学声子对结合能的贡献缓慢减小,而定域光学声子的贡献缓慢增大.  相似文献   

13.
L. Shi  Z.W. Yan   《Physics letters. A》2009,373(38):3490-3494
A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/AlxGa1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.  相似文献   

14.
萨茹拉  关玉琴 《发光学报》2007,28(5):667-672
利用改进的Lee-Low-Pines(LLP)方法和变分法研究了在外磁场作用下氮化物无限抛物量子阱中自由极化子的能级,得到了极化子基态能量随量子阱阱宽和外磁场变化的规律,对GaN/Al0.3Ga0.7N抛物量子阱进行了数值计算.结果表明:外磁场对极化子的能量有明显的影响,极化子基态能量随阱宽的增强而减小,随磁场的增强而增大,并且电子-声子相互作用对氮化物量子阱中极化子能量的贡献是很大的.  相似文献   

15.
抛物量子阱中束缚极化子的极化势和结合能   总被引:3,自引:1,他引:2  
元丽华  王旭  安张辉  马军 《发光学报》2005,26(6):709-713
利用改进的Lee-Low-Pines(LLP)方法,用变分法计算了无限深抛物量子阱中同时考虑与体纵光学声子和界面纵光学声子相互作用的束缚极化子的极化势和结合能.数值计算得出:阱宽较大时极化势很小,阱宽较小时极化势较大,所以对于较窄的抛物阱必须考虑极化势.对于给定阱宽的抛物阱,随着远离阱中心极化势迅速减小,当到达阱的界面附近极化势又开始增大.阱宽较小时,束缚极化子的结合能随着阱宽L的增大而急剧减小;阱宽较大时,结合能减小的非常缓慢,最后接近体材料中的三维值.  相似文献   

16.
We have investigated the polaron dynamics in n-doped InAs/GaAs self-assembled quantum dots by pump-probe midinfrared spectroscopy. A long T1 polaron decay time is measured at both low temperature and room temperature, with values around 70 and 37 ps, respectively. The decay time decreases for energies closer to the optical phonon energy. The relaxation is explained by the strong coupling for the electron-phonon interaction and by the finite lifetime of the optical phonons. We show that, even for a large detuning of 19 meV from the LO photon energy in GaAs, the carrier relaxation remains phonon assisted.  相似文献   

17.
In this paper, a new modified Hamiltonian of a polaron bound to a donor impurity in asymmetric step quantum wells (QWs) in the presence of an arbitrary magnetic field is given, in which the coupling of an electron with confined bulk-like LO phonons, half-space LO phonons and interface phonon modes is included. Especially, the interaction of the impurity with all possible optical-phonon modes is also considered. The ionization energy of a bound polaron in a magnetic field for asymmetric step QWs are studied by using a modified Lee-Low-Pines (LLP) variational method. The effects of the finite electronic confinement potential and the subband nonparabolicity are also considered. The relative importance of the donor impurity located at the well and the step is analyzed. Our results show the interaction between the impurity and the phonon field in screening the Coulomb interaction has a significant influence on the binding energy of bound polaron. The influence of subband non-parabolicity is appreciable on the bound polaron effects for the narrow well. The binding energy of bound polaron given in this paper are excellent agreement with the experimental measurement.  相似文献   

18.
量子阱中极化子的声子平均数   总被引:8,自引:2,他引:6  
刘伟华  肖景林 《发光学报》2005,26(5):575-580
采用有效质量近似下的变分法,考虑到电子同时与表面光学声子和体纵光学声子相互作用,研究了无限深量子阱中极化子的表面光学声子平均数,体纵光学声子平均数和光学声子平均数。讨论了电子与体纵光学声子耦合强度α,阱宽L和势垒材料AlxGa1-xAs中Al的含量x对上述光学声子平均数的影响。以GaAs/AlxGa1-xAs量子阱为例进行了数值计算。结果表明:量子阱中表面光学声子平均数随耦合强度α,阱宽L和Al含量x增大而增大。量子阱中体纵光学声子平均数随耦合强度α,阱宽L的增大而增大。光学声子平均数随耦合强度α,阱宽L和Al含量x的增大而增大。  相似文献   

19.
A variational approach is used to study the surface states of an electron in a semi-infinite wurtzite nitride semiconductor. The surface-state energy of the electron is calculated, by taking the effects of the electron-surface optical phonon interaction and structure anisotropy into account. The numerical computation has been performed for the energies of the electronic surface states as a function of the surface potential V0 for wurtzite GaN, AlN, and InN, respectively. The results show that the electron-phonon interaction lowers the surface state energy. It is also found that the energies of the electronic surface-state in wurtzite structures are lower than that in the zinc-blende structures by hundreds of meV for the materials calculated. The influence of e-p-interactions on the surface state of electron cannot be neglected.  相似文献   

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