Simultaneous dual-wavelength laser operation at 1342 and 946 nm in two laser crystals and their sum-frequency mixing

A sum-frequency yellow-green laser at 554.9 nm is reported by this paper, 946 nm wavelength is obtained from ⁴F_3/2-⁴I_9/2 transition in Nd:YAG and 1342 nm wavelength is obtained from ⁴F_3/2-⁴I_13/2 transition in Nd:YVO₄. Using a doubly folded-cavity type-II critical phase matching KTP crystal intra cavity to make 946 nm laser from Nd:YAG and 1342 nm laser from Nd:YVO₄ frequency summed, with incident pumped power of 30 W in Nd:YAG and 20 W in Nd:YVO₄, TEM₀₀ mode yellow-green laser at 554.9 nm at 1.15 W is obtained and its M² factor is less than 1.22. The experimental results show that the Nd:YAG and Nd:YVO₄ crystals intra-cavity sum-frequency mixing is an effective method for yellow-green laser and it can be applied to other two laser crystals to obtain more all-solid-state lasers with different wavelengths.     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

Growth and characterization of a new organic NLO material: Glycine nitrate

Single crystals of glycine nitrate [(C₂H₆NO₂)⁺ · (NO₃)⁻] were grown using submerged seed solution method. The crystals were characterized by using single crystal X-ray diffraction and density measurements. Spectroscopic, thermal and optical studies were carried out for analyzing the presence of the functional groups, thermal stability, decomposition and transparency of the sample. These studies showed that the crystals are thermally stable upto 145 °C and transparent for the fundamental and second harmonic generation of Nd:YAG (λ = 1064 nm) laser. Second harmonic generation (SHG) conversion efficiency was investigated to explore the NLO characteristics of this material. Microhardness and dielectric studies were also carried out.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

Different processes responsible for blue pumped, ultraviolet and violet luminescence in high-concentrated Er:YAG and low-concentrated Er:YAP crystals

Ultraviolet and violet upconverted luminescence in high-concentrated (8.4 at%) Er³⁺:YAG and low-concentrated (1 at%) Er³⁺:YAP crystals has been investigated under blue laser excitation of the ⁴F_7/2 multiplet. The upconversion mechanisms were studied in detail based on upconversion luminescence intensity dependence and decay curves. Upconversion luminescence was attributed to energy transfer processes in Er³⁺:YAG and excited state absorption processes in Er³⁺:YAP, respectively.     

Synthesis and laser patterning of Bi-doped Y3Fe5O12 crystals in germanosilicate glasses

New germanosilicate glasses giving the crystallization of yttrium iron garnet Y₃Fe₅O₁₂ (YIG) and Bi-doped YIG, 23Na₂O-xBi₂O₃-(12−x)Y₂O₃-25Fe₂O₃-20SiO₂-20GeO₂ (mol%), are developed, and the laser-induced crystallization technique is applied to the glasses to pattern YIG and Bi-doped YIG crystals on the glass surface. It is clarified from the Mössbauer effect measurements that iron ions in the glasses are present mainly as Fe³⁺. It is suggested from the X-ray diffraction analyses and magnetization measurements that Si⁴⁺ ions are incorporated into YIG crystals formed in the crystallization of glasses. The irradiations (laser power: 32-60 mW and laser scanning speed: 7 μm/s) of continuous wave Yb:YVO₄ fiber laser (wavelength: 1080 nm) are found to induce YIG and Bi-doped YIG crystals, indicating that Fe³⁺ ions in the glasses act as suitable transition metal ions for the laser-induced crystallization. It is suggested that YIG and Bi-doped YIG crystals in the laser irradiated part might orient. The present study will be a first step for the patterning of magnetic crystals containing iron ions in glasses.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level

We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level ⁴F_3/2 of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.     

Area-selectively sputtering the RuO2 nanorods array

The RuO₂ nanorods array is grown selectively on the SiO₂-patterned sapphire (SA) wafers using reactive sputtering. The area-selectivity is attributed to an early nucleation of RuO₂ and its fast surface coverage on SA (1 0 0) and (0 1 2), in contrast to the sluggish nucleation on glassy SiO₂ in the initial sputtering period. The growth domain is explored by investigating the temperature windows at sputtering power 40, 50, and 60 W. The low-temperature bound is limited by the mobility of precursors on SiO₂ surface, which enables the precursors to depart before aggregating into a large size to smear the non-growth region. The high-temperature bound is set by the horizontal growth which enlarges the rod width and deteriorates its one-dimensional feature. The temperature window shrinks with increasing sputtering power. The X-ray photoelectron spectra indicate the as-sputtered rod surface is ruthenium rich. The X-ray diffraction analysis shows that RuO₂ growth on SA (1 0 0) and (0 1 2) follows the epitaxial relations between RuO₂ and SA crystals.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Laser plasma shockwave cleaning of SiO2 particles on gold film

A Nd:YAG laser (1064 nm) induces optical breakdown of the airborne above the gold-coated K9 glass surface and the created shockwave removes the SiO₂ particles contaminated on the gold films. The laser cleaning efficiency has been characterized by optical microscopy, dark field imaging, ultraviolet-visible-near infrared spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and the Image-pro software. The relationships between removal ratio and particle position and laser gap distance have been studied in the case of single pulse laser cleaning. The results show that the 1064 nm laser induced plasma shockwave can effectively remove the SiO₂ particles. The removal ratio can reach above 90%. The effects of particle position and laser gap distance on the cleaning efficiency are simulated for the single pulse laser cleaning. The simulated results are consistent with the experimental ones.     

43 W picosecond laser and second-harmonic generation experiment

Combining the advantages of diode-end-pumped Nd: YVO₄ and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4 W and good beam quality of M² < 1.7. By focusing the high power picosecond laser in LBO crystal, 532 nm green laser with maximal power of 20.8 W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7 W green laser obtained from the fundamental frequency laser with power of 31.4 W and beam quality of M² < 1.25.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

4.44 W of CW 515 nm green light generated by intracavity frequency doubling Yb:YAG thin disk laser with LBO

We demonstrate the generation of 515 nm green laser with diode-pumped Yb:YAG thin disk by intracavity frequency doubling of type-I phase-matched LiB₃O₅(LBO) in a V-type cavity at room temperature. A continuous-wave (CW) output power of 4.44 W at 515 nm was obtained. Optical-optical efficiency of 515 nm green laser is 14.6%. The fluctuation of green laser was 1.6% at the maximum output power in 0.5 h. Thermal lensing effects in Yb:YAG thin disk are investigated too.     

Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments

Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of ²⁸Si⁺ and ²⁸Si⁻ ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) × 10³ K of the sputtered region bombarded with pulsed 22 kV Au₃⁺ primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of Si_nO_m fragments, and a slight shift to negative polarity for PECVD SiO₂ compared to thermally oxidized SiO₂ films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO₂ by those for thermally oxidized SiO₂ films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiO_m (m = 1, 2) and Si₂O_m (m = 1-4) fragments for PECVD SiO₂ films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO₂ films compared to the thermally oxidized SiO₂ films.     

Compact low threshold Cr:YAG passively Q-switched intracavity optical parametric oscillator

We report a compact KTP-based intracavity optical parametric oscillator (IOPO) driven by a diode-end-pumped passively Q-switched Nd:YVO₄/Cr:YAG laser. For the first time, we take the thermal lens effect of the Cr:YAG into consideration and discuss its impact on the signal output. Diode pump threshold as low as 0.52 W has been achieved, which is the lowest result reported to date. At the incident diode pump power of 4 W, we obtained the maximum signal average and peak power of 358 mW and 12.5 kW, respectively, corresponding to a diode-to-signal conversion efficiency of 9%. Moreover, cavity-dumping characteristic and pulse transforming process from 1064 to 1573 nm are qualitatively analyzed.     

Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates

A pulsed KrF excimer laser of irradiance of about 10⁸ W/cm² was utilized to synthesize Si nanocrystals on SiO₂/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1 0 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1 1 1) and (2 2 0), on SiO₂/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm.     

Second and third order nonlinear optical properties of nanostructured ZnO thin films deposited on α-BBO and LiNbO3

The nanocrystalline ZnO films were deposited on α-BaB₂O₄ (0 0 1 2) and LiNbO₃ (0 0 0 1) single crystals by RF-magnetron sputtering technique. Their structure was studied using X-ray diffractometry, scanning electron microscopy and atomic force microscopy. Besides, the optical absorption spectra were investigated. The second and third harmonic generation measurements were performed by means of the rotational Maker fringe technique using Nd:YAG laser at 1064 nm in picoseconds regime. Finally, the second and third order nonlinear susceptibilities were determined and their values have been found and compared.