Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Influence of overcoat on laser-induced damage threshold of 532 and 800 nm TiO2/SiO2 high reflectors

TiO₂/SiO₂ high reflectors with and without a SiO₂ overcoat are deposited by electron-beam evaporation. The film properties are characterized by visible spectrometry measures, structure analysis, roughness and laser-induced damage threshold (LIDT) tests, surface defects and damage morphology observation. The effects of overcoats on LIDT at 532 nm, 8 ns and 800 nm, 220 ps laser pulses are investigated. The relations between film structure, roughness, surface defects, electric field and LIDT are discussed. It is found that overcoats can increase the LIDT at these two laser wavelengths. The reduction of peak temperature, the low defects density and roughness, the low intrinsic absorption of SiO₂ and its amorphous structure are the main reasons for LIDT improvement by overcoats.     

A comparative study of continuous laser operation on the F3/2-I9/2 transitions of Nd:GdVO4 and Nd:YVO4 crystals

A comparative study of Nd:GdVO₄ and Nd:YVO₄ crystal lasers pumped by a fiber-coupled diode array has been conducted at the ⁴F_3/2-⁴I_9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO₄ crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO₄ were superior to those of Nd:YVO₄, indicating that Nd:GdVO₄ is a more efficient laser crystal than Nd:YVO₄ for laser operation on the ⁴F_3/2-⁴I_9/2 transitions.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.     

XPS analysis for degraded Y2SiO5:Ce phosphor thin films

X-ray photoelectron spectroscopy (XPS) results were obtained for standard Y₂SiO₅:Ce phosphor powders as well as undegraded and 144 h electron degraded Y₂SiO₅:Ce pulsed laser deposited (PLD) thin films. The two Ce 3d peaks positioned at 877.9 ± 0.3 and 882.0 ± 0.2 eV are correlated with the two different sites occupied by Ce in the Y₂SiO₅ matrix. Ce replaced the Y in the two different sites with coordination numbers of 9 and 7. The two Ce 3d XPS peaks obtained during the thin film analysis were also correlated with the luminescent mechanism of the broad band emission spectra of the Y₂SiO₅:Ce X₁ phase. These two different sites are responsible for the two main sets of cathodoluminescent (CL) and photoluminescence (PL) peaks situated at wavelengths of 418 and 496 nm. A 144 h electron degradation study on the Y₂SiO₅:Ce thin film yielded an increase in the CL intensity with a second broad emission peak emerging between 600 and 700 nm. XPS analysis showed the presence of SiO₂ on the surface that formed during prolonged electron bombardment. The electron stimulated surface chemical reaction (ESSCR) model is used to explain the formation of this luminescent SiO₂ layer.     

Photoluminescence properties and effects of dopant concentration in Bi2ZnB2O7:Tb phosphor

A novel green phosphor, Tb³⁺ doped Bi₂ZnB₂O₇ was synthesized by conventional solid state reaction method. The phase of synthesized materials was determined using the XRD, DTA/TG and FTIR. The photoluminescence characteristics were investigated using spectrofluorometer at room temperature. Bi₂ZnB₂O₇:Tb³⁺ phosphors excited by 270 nm and 485 nm wavelengths. The emission spectra were composed of three bands, in which the dominated emission of green luminescence Bi₂ZnB₂O₇:Tb³⁺ attributed to the transition ⁵D₄ → ⁷F₅ is centered at 546 nm. The dependence of the emission intensity on the Tb³⁺ concentration for the Bi_2−xTb_xZnB₂O₇ (0.01 ≤ x ≤ 0.15) was studied and observed that the optimum concentration of Tb³⁺ in phosphor was 13 mol% for the highest emission intensity at 546 nm.     

Fabrication of highly ordered CuInSe2 films with hollow nanocones for anti-reflection

Highly ordered CuInSe₂ films with hollow nanocones were fabricated by electron beam evaporation and nanospheres lithograph. From the AFM analyses, polystyrene nanospheres with diameter of 220 nm are assembled regularly on glass substrates. After reaction ion etching under different powers and residues removal, different and new surface morphologies of substrates have been obtained, such as smooth nanocones and hollow nanocones. The diffuse reflection spectra demonstrate that films on the substrates with periodic nanopatterned structure have less reflection over wavelengths ranged from 200 nm to 2500 nm due to light trapping. Especially, reflection for hollow nanocone arrays has the larger suppression value than nanocone-patterned films, which proves that surface pattern of hollow nanocones has better anti-reflection effect. Furthermore, while hollow depth increases from 6 nm to 9 nm, its optical antireflective effect becomes remarkable. These results could yield new options for solar-cell design with higher energy conversion efficiency.     

Influence of epitaxial growth on phase competition in Pr0.5Sr0.5MnO3 films

A series of Pr_0.5Sr_0.5MnO₃ (PSMO) films with various thickness were epitaxially grown on substrates of (0 0 1)-oriented (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT), LaAlO₃ (LAO) and SrTiO₃ (STO), and (0 1 1)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (0 0 1) and tensile cases deposited on STO (0 0 1) but absent in little strained films grown on LSAT (0 0 1), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400 nm films deposited on (0 1 1)-oriented STO as well as LAO substrates show FMM-AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM-AFI transition.     

Structures of Co and Pt nanoclusters on a thin film of Al2O3/NiAl(1 0 0) from reflection high-energy electron diffraction and scanning-tunnelling microscopy

With reflection high-energy electron diffraction (RHEED) and scanning-tunnelling microscopy (STM), we made measurements on Co and Pt nanoclusters grown by vapour deposition on a thin film of Al₂O₃/NiAl(1 0 0). The results show that the annealed Co nanoclusters (with mean diameters 2.5, 3.4, 5.8 nm and heights 0.7, 1.5, 1.5 nm, respectively) and Pt nanoclusters (with mean diameter 2.25 nm and height 0.4 nm) are highly crystalline and that their structures are significantly affected by the oxide substrate. Structural analysis based on the RHEED patterns indicates that both Co and Pt clusters have a fcc phase and grow with their (0 0 1) facets parallel to the θ-Al₂O₃(1 0 0) surfaces, and with their [1 1 0] and [−1 1 0] axes along the [0 1 0] and [0 0 1] directions of the oxide surface, respectively, so (Co(0 0 1)[1 1 0]∥Al₂O₃(1 0 0)[0 1 0] and Pt(0 0 1)[1 1 0]∥Al₂O₃(1 0 0)[0 1 0]). This growth is optimal as the Co and Pt fcc (0 0 1) facets match well with the oxygen mesh. To minimize the lattice mismatch, the lattice parameter of the Co clusters expands 4-5% relative to fcc Co bulk, whereas the lattice parameter of the Pt clusters remains near the bulk value, as the Pt fcc (0 0 1) plane has a close lattice match with the oxide surface.     

Kinetic aspect of CO2 reforming of CH4 on Ni(1 1 1): A density functional theory calculation

Reaction pathways of CO₂ reforming of CH₄ on Ni(1 1 1) were investigated by using density functional theory calculation. The computed kinetic parameters agree with the available experimental data, and a new and simplified mechanism was proposed on the basis of computed energy barriers. The first step is CO₂ dissociation into surface CO and O (CO₂ → CO + O) and CH₄ sequentially dissociation into surface CH and H (CH₄ → CH₃ → CH₂ → CH). The second step is CH oxygenation into CHO (CH + O → CHO), which is more favored than its dissociation into C and hydrogen (CH → C + H). The third step is the dissociation of CHO into surface CO and H (CHO → CO + H). Finally, H₂ and CO desorb from Ni(1 1 1) and form free H₂ and CO. The rate-determining step is the CH₄ dissociative adsorption, and the key intermediate is surface adsorbed CHO. Parameters, which might modify the proposed mechanism, have been analyzed. In addition, the formation, deposition and elimination of surface carbon have been discussed accordingly.     

Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr2O3(0 0 0 1) thin film

The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/α-Cr₂O₃ thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An α-Cr₂O₃(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the α-Cr₂O₃(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated α-Cr₂O₃(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr₂O₃. The valence state of the Cr₂O₃(0 0 0 1) layer is similar to that of bulk Cr₂O₃. The ultrathin Co film directly grown on the α-Cr₂O₃(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Néel temperature of Cr₂O₃ for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr³⁺ in Cr₂O₃(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism.     

Optical and electrical characterization of TiO2 nanotube arrays on titanium substrate

Novel oriented aligned TiO₂ nanotube (TN) arrays were fabricated by anodizing titanium foil in 0.5% HF electrolyte solution. It is indicated that the sizes of the TNs greatly depended on the applied voltages to some extent. The electrical properties of the TN arrays were characterized by current-voltage (I-V) measurements. It exhibits a nonlinear, asymmetric I-V characterization, which can be explained that there exists an n-type semiconductor/metal Schottky barrier diode between TN arrays and titanium substrate interface. The absorption edges shift towards shorter wavelengths with the decrease of the anodizing voltages, which is attributed to the quantum size effects. At room temperature, a novel wide PL band consisting of four overlapped peaks was observed in the photoluminescence (PL) measurements of the TN arrays. Such peaks were proposed to be resulted from the direct transition X₁ → X₂/X₁, indirect transition Γ₁ → X₂/X₁, self-trapped excitons and oxygen vacancies, respectively.     

Theoretical prediction on the wavelength-temperature shift in pulsed TE CO2 lasers

The wavelength-temperature shift observed in pulsed TE CO₂ lasers is discussed theoretically by means of Six-temperature model rate equations for tunable TE CO₂ lasers. Numerical calculations of the temperature-wavelength shift in a pulsed TE CO₂ laser with a simple plano-concave stable resonator, whether excited by conventional low-inductance fast-discharge scheme or by a long-pulse Pulser/sustainer discharge scheme, show that the laser output wavelengths are within the 10P branch as the ambient temperature varies from 228 to 338 K, but will change as the ambient temperature varies. The laser output wavelengths will move to the transition lines with longer wavelengths in the 10P branch as the ambient temperature increases and vice versa. The calculated results also illustrate that near the ambient temperature of 310 K, the laser is more likely to operate on multi-transition lines. Considering this wavelength-temperature shift, the chilling device adopted in high-power high repetition rate TE CO₂ lasers is important in maintaining a stable laser output spectra as well as a stable laser output power. The numerical results also suggest that a frequency agile resonator is highly recommended if stable laser output spectra are required in TE CO₂ lasers.     

Luminescence of ZnWO4 and CdWO4 thin films prepared by spray pyrolysis

Thin films of ZnWO₄ and CdWO₄ were prepared by spray pyrolysis and the structural, optical, and luminescence properties were investigated. Both ZnWO₄ and CdWO₄ thin films showed a broad blue-green emission band. The broad band of ZnWO₄ films was centered at 495 nm (2.51 eV) consisted of three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 540 nm (2.30 eV). The broad band of CdWO₄ films at 495 nm (2.51 eV) could be decomposed to three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 545 nm (2.28 eV). These results are consistent with emission from the WO₆⁶⁻ molecular complex. The luminance and efficiency for ZnWO₄ film at 5 kV and 57 μA/cm² were 48 cd/m² and 0.22 lm/w, respectively, and for CdWO₄ film the values were 420 cd/m² and 1.9 lm/w.     

Density functional theory study on activity of α-Fe2O3 in chemical-looping combustion system

The dominant growth planes (0 0 0 1) and (1 1 0 2) have been used to investigate the activity of the natural α-Fe₂O₃ in chemical-looping combustion system based on density functional theory (DFT) calculations. In the chemical-looping combustion system, CO is selected as the probe fuel gas to detect the activities of the different surfaces. CO interacts stronger to Fe₂O₃ (1 1 0 2) than Fe₂O₃ (0 0 0 1). CO can be oxidized into CO₂ species directly on Fe₂O₃ (1 1 0 2) rather than Fe₂O₃ (0 0 0 1). The formation of CO₂ accompanying with a transformation from hematite to magnetite acted as the key step for the reduction process of hematite.     

Regional variations in MR relaxation of hip joint cartilage in subjects with and without femoralacetabular impingement

The objective of this study was to analyze regional variations of magnetic resonance (MR) relaxation times (T_1ρ and T₂) in hip joint cartilage of healthy volunteers and subjects with femoral acetabular impingement (FAI). Morphological and quantitative images of the hip joints of 12 healthy volunteers and 9 FAI patients were obtained using a 3 T MR scanner. Both femoral and acetabular cartilage layers in each joint were semi-automatically segmented on sagittal 3D high-resolution spoiled gradient echo (SPGR) images. These segmented regions of interest (ROIs) were automatically divided radially into twelve equal sub-regions (30⁰ intervals) based on the fitted center of the femur head. The mean value of T_1ρ/T₂ was calculated in each sub-region after superimposing the divided cartilage contours on the MR relaxation (T_1ρ/T₂) maps to quantify the relaxation times. T_1ρ and T₂ relaxation times of the femoral cartilage were significantly higher in FAI subjects compared to healthy controls (39.9 ± 3.3 msec in FAI vs. 35.4 ± 2.3 msec in controls for T_1ρ (P = 0.0020); 33.9 ± 3.1 msec in FAI vs. 31.1 ± 1.7 msec in controls for T₂ (P = 0.0160)). Sub-regional analysis showed significantly different T_1ρ and T₂ relaxation times in the anterior-superior region (R9) of the hip joint cartilage between subjects with FAI and healthy subjects, suggesting possible regional differences in cartilage matrix composition between these two groups. Receiver operating characteristic (ROC) analysis showed that sub-regional analysis in femoral cartilage was more sensitive in discriminating FAI joint cartilage from that of healthy joints than global analysis of the whole region (T_1ρ: area under the curve (AUC) = 0.981, P = 0.0001 for R9 sub-region; AUC = 0.901, P = 0.002 for whole region; T₂: AUC = 0.976, P = 0.0005 for R9 sub-region; AUC = 0.808, P = 0.0124 for whole region). The results of this study demonstrated regional variations in hip cartilage composition using MR relaxation times (T_1ρ and T₂) and suggested that analysis based on local regions was more sensitive than global measures in subjects with and without FAI.     

Microstructure and magnetic properties studies of SmCo5 thin films grown on MgO and glass substrates

In this work, SmCo₅ thin films are deposited on single crystal MgO (1 0 0) and amorphous glass substrates with a Cr underlayer at 400 °C by sputtering. A comparison study shows that the microstructures and magnetic properties are different in the two SmCo₅ films on the MgO (1 0 0) and glass substrates, respectively. An epitaxial growth of Cr-(2 0 0)〈1 1 0〉/SmCo₅-(1 1 2¯ 0)〈0 0 0 1〉 is achieved on the MgO (1 0 0) single crystal substrate with an average grain size of 20 nm for SmCo₅. On the amorphous glass substrate, no significant crystallographic texture is found in the Cr underlayer. After the deposition of SmCo₅, a weak texture of (1 1 2¯ 0) is observed with an average grain size of 8 nm. High remanence ratio value in this film is probably due to strong exchange coupling. Both SmCo₅ films show high in-plane coercivity, high in-plane anisotropy and remanence enhancement.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films prepared by pulsed laser deposition

The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi₂O₃, BiNbO₄ and Bi₅Nb₃O₁₅ can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10⁻⁴ at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.     

The dehydrogenation of CH4 on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces: A density functional theory study

CH₄ dehydrogenation on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces has been investigated by using density functional theory (DFT) slab calculations. On the basis of energy analysis, the preferred adsorption sites of CH_x (x = 0-4) and H species on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces are located, respectively. Then, the stable co-adsorption configurations of CH_x (x = 0-3) and H are obtained. Further, the kinetic results of CH₄ dehydrogenation show that on Rh(1 1 1) and Rh(1 0 0) surfaces, CH is the most abundant species for CH₄ dissociation; on Rh(1 1 0) surface, CH₂ is the most abundant species, our results suggest that Rh catalyst can resist the carbon deposition in the CH₄ dehydrogenation. Finally, results of thermodynamic and kinetic show that CH₄ dehydrogenation on Rh(1 0 0) surface is the most preferable reaction pathway in comparison with that on Rh(1 1 1) and Rh(1 1 0) surfaces.