μ-子催化核聚变中强脉冲激光对介原子μ3He的电离

数值求解了一维含时的Schr?dinger方程，研究了μ子催化核聚变反应中激光强度和波长对介原子μ³He电离的影响.发现当激光强度为10¹⁹—10²³W/cm²量级时，介原子μ³He有2.7%左右的电离率；当激光强度达到6.0×10²⁴W/cm²时，对介原子μ³He 有显著的电离，并且电离率随着激光的强度、波长而递增，进而会有效提高μ子的催化效率. 关键词： μ子 核聚变 激光 电离     

激光产生等离子体中密度轮廓的变陡和凹陷现象的研究

用可见光探针的干涉诊断方法,研究了功率密度为10¹⁴W/cm²数量级的钕玻璃激光辐照固体靶产生的等离子体冕区的电子密度分布轮廓。得到了密度轮廓变陡、密度凹陷等激光与等离子体相互作用的信息。研究了激光辐照不同结构的靶形成密度凹陷的不同特点。 关键词：     

激光烧蚀Al靶产生的等离子体中辐射粒子的速度及激波

在低真空条件下(5Pa),通过测量脉冲激光烧蚀平面Al靶产生的等离子体辐射谱的时间分辨特征,得到辐射粒子速度的空间分布.在激光脉冲宽度为10ns,烧蚀斑直径为200μm,靶面上功率密度分别为1.91×10¹⁰,5.10×10¹⁰和7.64×10¹⁰W/cm²时,测得辐射粒子Al的速度均在10⁶cm/s量级,且随着靶面径向距离的增大而近似呈指数衰减.在距靶面的相同距离处,激光功率密度的增大反而使速度减小.利用激波模型(shockwave model)较好地解释了实验结果,并得出激波的波面基本为柱对称 关键词： 激光等离子体 平面Al靶 粒子速度分布 激波     

激光等离子体辐射温度时间特性测量研究

本文提出一种软X射线条纹相机与吸收膜相耦合测量激光等离子体辐射温度的实验方法,并且应用这个方法测量了平面金靶在1.053μm激光(LF-11^#激光装置)作用下,靶面功率密度约为10¹⁴W/cm²的辐射温度。对温度处理中存在的误差,以及把此方法推广到能谱的时间分辨和温度的空间分辨测量中的可能性进行了讨论。 关键词：     

激光等离子体中3/2ω0谐波的实验观测

测量了激光产生的等离子体中3/2ω₀谐波的发射。结果表明,在靶面功率密度为10¹⁴W/cm²量级的情况下,3/2ω₀谐波发生蓝移,蓝移量约为70?。谐波本身加宽量为26?,随靶面功率密度增加,加宽量亦略有增大。 关键词：     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps,波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法,实验测量了激发空气电离所需的阈值激光强度.结果表明,当激光脉冲宽度从50fs增加到22ps时,阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²;I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p 关键词： 飞秒激光 阈值 多光子电离 碰撞电离     

针孔透射光栅谱仪用于线聚焦激光等离子体研究

利用针孔透射光栅光谱仪(PTGS)研究了波长为1.06μm、平均功率密度为2×10¹²W/cm²的线聚焦激光照射Al平板靶所产生的线状等离子体的轴向和非轴向X射线发射(5—200?)的光谱和空间分布特性。文中也就该条件下的线状等离子体作为X射线激光增益介质的有关问题进行了讨论。 关键词：     

非线性一维光子晶体波导光双稳

利用非线性折射率系数较大且非线性时间响应较快的CdS_xSe_1-x玻璃为材料,设计并制备了非线性一维光子晶体波导光双稳器件,该器件的折射率空间分布呈正弦形式。实验测得双稳开关的阈值功率密度为1.60×10⁵W/cm²,开关时间为63ps。采用时域有限差分方法讨论了光子晶体带隙随入射光强变化而移动的情况,随着入射光功率密度的增加,光子晶体的带隙中心向短波方向移动。同时计算了该器件的双稳特性,理论计算得到双稳开关的阈值功率密度为1.40×10⁵W/cm²,开关时间约为50ps。获得了理论与实验基本一致的结果。     

激光加热碳、金平面靶等离子体膨胀过程

利用软X射线条纹相机与针孔成象装置相结合,测得了碳、金平面靶靶面X射线时、空分辨图象,从而推算出靶面等离子体膨胀平均速度分别为(碳):5.11×10⁷cm/s,(金):6.13×10⁷cm/s。实验用1.06μm的钕玻璃激光轰击靶面,X射线能谱范围为0.1—10keV。测量在激光功率密度≈10¹⁴W/cm²的情况下进行。 关键词：     

5—200?范围激光等离子体X射线辐射特性研究

利用带有针孔的透射式光栅光谱仪研究了激光等离子体X射线辐射的原子序数依赖性和激光功率密度对辐射的影响。得到了波长为1.06μm,平均功率密度为5×10¹⁴W/cm²的激光辐照条件下Z=6(C)到Z=79(Au)的不同原子序数激光等离子体X射线发射光谱。点聚焦和线聚焦激光照射方式下Al,Au等离子体X射线发射的对照实验结果表明,激光功率密度对低Z等离子体X射线发射的影响比对高Z的影响更明显。 关键词：     

488 nm连续激光晶化本征非晶硅薄膜的喇曼光谱研究

利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s, 激光功率密度在1.57×10⁵ W/cm²时,能实现非晶硅向多晶硅的转变,在功率密度达到2.7 56×10⁵ W/cm²时,有非晶开始向单晶转变,随着激光功率密度的继续增加,晶化结果仍为单晶;在功率密度为2.362×10⁵ W/cm²下,60 s照射时间晶化效果较好;在功率密度为2.756×10⁵ W/cm²和照射时间为60 s的条件下,用488 nm波长比514 nm波长的激光晶化本征非晶硅薄膜效果较好,并均为单晶态.     

Fiber laser cleaning of metal mirror surfaces for optical diagnostic systems of the ITER

The results of experimental studies into efficiency of removal of films with a complex composition from metal mirrors by pulsed fiber laser irradiation are presented. It is shown that the initial reflectivity of optical elements can be restored by the selection of modes of irradiation impacting the surface with the sputtered film. Effective cleaning is performed by radiation with a power density lower than 10⁷ W/cm². The removal of contaminations at such a relatively low power density occurs in a solid phase, owing to which the thermal effect on the mirror is insignificant.     

Effects of laser irradiation energy density on the properties of pulsed laser deposited ITO thin films

The properties of indium tin oxide (ITO) thin films, deposited at room temperature by simultaneous pulsed laser deposition (PLD), and laser irradiation of the substrate are reported. The films were fabricated from different Sn-doped In₂O₃ pellets at an oxygen pressure of 10 mTorr. During growth, a laser beam with an energy density of 0, 40 or 70 mJ/cm² was directed at the middle part of the substrate, covering an area of ∼1 cm². The non-irradiated (0 mJ/cm²) films were amorphous; films irradiated with 40 mJ/cm² exhibited microcrystalline phases; and polycrystalline ITO films with a strong 〈111〉> preferred orientation was obtained for a laser irradiation density of 70 mJ/cm². The resistivity, carrier density, and Hall mobility of the ITO films were strongly dependent on the Sn doping concentration and the laser irradiation energy density. The smallest resistivity of ∼1×10^-4 Ω cm was achieved for a 5 wt % Sn doped ITO films grown with a substrate irradiation energy density of 70 mJ/cm². The carrier mobility diminished with increasing Sn doping concentration. Theoretical models show that the decrease in mobility with increasing Sn concentration is due to the scattering of electrons in the films by ionized centers. PACS 81.15.Fg; 73.61.-r; 73.50.-h     

Radiation effects and pulsed laser deposition of titanium by Nd:Yag laser

A study of Ti laser irradiation and thin film deposition produced by an Nd:Yag pulsed laser is presented. The laser pulse, 9?ns width, has a power density of the order of 10¹⁰?W/cm². The titanium etching rate is of the order of 1?µg/pulse, it increases with the laser fluence and shows a threshold value at about 30?J/cm² laser fluence. The angular distribution of ejected atoms (neutrals and ions) is peaked along the normal of the target surface. At high fluence, the fractional ionization of the plasma produced by the laser is of the order of 10%. Time-of-flight measurements demonstrate that the titanium ions, at high laser fluence, may reach kinetic energies of about 1?keV. Obtained results can be employed to produce energetic titanium ions, to produce coverage of thin films of titanium and to realize high adherent titanium-substrate interfaces. The obtained results can be employed to produce energetic titanium ions, to produce a coverage of thin titanium films on polymers, and to realize highly adherent titanium–substrate interfaces.     

Picosecond laser ablation of thin copper films

The ablation process of thin copper films on fused silica by picosecond laser pulses is investigated. The ablation area is characterized using optical and scanning electron microscopy. The single-shot ablation threshold fluence for 40 ps laser pulses at 1053 nm has been determinated toF _thres = 172 mJ/cm². The ablation rate per pulse is measured as a function of intensity in the range of 5 × 10⁹ to 2 × 10¹¹ W/cm² and changes from 80 to 250 nm with increasing intensity. The experimental ablation rate per pulse is compared to heat-flow calculations based on the two-temperature model for ultrafast laser heating. Possible applications of picosecond laser radiation for microstructuring of different materials are discussed.     

Laser-induced photoprocesses in solutions and films of the CdSe/ZnS nanoparticles

The photophysical properties of solutions and films with relatively high concentrations of CdSe/ZnS nanoparticles are studied in the presence of the visible laser irradiation in a wide range of power densities. The short-wavelength wing detected in the photoluminescence spectra of the solutions of quantum dots is due to the selective laser excitation of small-size nanoparticles. A comprehensive analysis of the anti-Stokes photoluminescence of the nanoparticles in solutions and films indicates the thermal mechanism of this phenomenon. The dimensional quantization effect, narrow spectra, and a relatively high luminescence yield are retained in the films with a high nanoparticle concentration. The luminescence spectra of the films remain unchanged when the laser flux density increases to 1 × 10⁶ W/cm². The effect of the laser radiation on the nanoparticle films is studied at the flux densities exceeding the damage threshold (5 × 10⁶–1 × 10⁹ W/cm²).     

Transport of metals in Si by the thermal effect of continuous CO2 laser radiation

The influence of the local thermal effect of continuous CO₂ laser radiation with a power density as high as 10³ W/cm² on metal-Si films is investigated. It is discovered that the structural defects formed as a result of irradiation influence the transport of the metal in Si. Zh. Tekh. Fiz. 69, 135–137 (October 1999)     

Interaction of tea CO2 laser light with plasma

High power double discharge type TEA CO₂ laser was used to study laser plasma interaction on carbon target plasma. The maximum output power was 0.3 GW and full width at half maximum intensity was 100 ns. We measured the reflectivity of the laser light at 10.6 μm in wavelength from the carbon plasma. The reflectivity showed a maximum (≈56%) at the laser power intensity of about 1.1 x 10¹⁰ W/cm², and at above this value, the reflectivity decreased. The absorption was introduced effectively above this intensity. The electron density and temperature were also measured.     

Degradation of gallium arsenide under irradiation with an excimer laser

The results of a study of degradation of the surface of gallium arsenide resulting from irradiation with a power excimer laser at power densities ranging from the threshold power to the power level causing local melting of the surface are presented. Two degradation mechanisms have been identified, one of which causes the formation of a thin near-surface layer of modified nonstoichimetric gallium arsenide at a power level higher than 1×10⁷ W/cm² and the other of which causes the formation of a separate gallium phase. The formation of the separate gallium phase can be produced either by a single pulse of laser radiation with a power density exceeding 2.7×10¹¹ W/cm² or by a few less powerful pulses. An empirical relationship has been established between the power density and the number of pulses causing the formation of the separate gallium phase. It has also been established that as a result of laser irradiation at the boundary of “cold” and “hot” gallium arsenide, periodically ordered defects in the form of blocks aligned along the [100] directions emerge.     

Table-top 50-W laser system for ultra-fast laser ablation

We have built a mode-locked Nd:YVO₄ laser with a very long resonator which produces an average power of 50 W in 13-ps pulses at 1064 nm and was designed for applications in micro-machining, the deposition of optical thin films, and the growth of nano-clusters in the laser-ablated plumes. By operating the laser at very low mode-locking repetition rates (1.5 MHz, 2.6 MHz, and 4.1 MHz), high pulse power is available in a near diffraction limited beam, allowing focused intensities to exceed 10¹² W/cm² and permitting efficient evaporation of difficult materials such as Si. The high power also allows conversion into the second harmonic at 532 nm with an efficiency exceeding 80%. Measurements of the ablation mass in experiments with metals show a 30–100 times increase in the ablation rate compared to the conventional low-repetition-rate ns-range lasers. PACS 79.20.Ds; 81.15.Fg; 81.16.Mk; 42.62.Cf