Mesoscopic conductance fluctuations in graphene

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.     

ZnS型薄膜电致发光器件中能谷转移过程的蒙特卡罗模拟

计算了ZnS中电子谷间散射的速率.利用蒙特卡罗方法,研究了ZnS型薄膜电致发光器件中电子的能谷转移过程.得出了能谷转移的瞬态过程,电场对谷间分布的影响以及不同能谷中电子动能分布的特点.提出了高能谷的能量存储效应.这些结果可作为研究电致发光过程的基本数据.     

First-principles calculation of alloy scattering in Ge(x)Si(1-x)

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si(1-x)Ge(x) alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.     

Anisotropic Short-Wavelength Friedel Oscillation with Adjustable Envelope in Graphene

We investigate theoretically the intervalley charge density oscillation and the screened ionic potential in graphene caused by the intervalley scattering. We demonstrate that the contribution from the intervalley scattering is comparable with that from the intravalley scattering, and oscillation rather than decaying dominates at a large distance away from the external impurity. We show that the intervalley oscillation is strongly anisotropic because of the inequivalency between neighboring valleys. The anisotropic oscillation consists of an anisotropic short-wavelength oscillation with an anisotropic fixed wavelength and an isotropic long-wavelength envelop with an isotropic wavelength modulated by doping, making an adjustable-widthed wave-packet propagation. One weakens the screening and gets anisotropic short-wavelength oscillation by introducing short-range mechanism in graphene and graphene-like materials.     

Optical and intervalley scattering in quantized inversion layers in semiconductors

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E₀, E₁, E'₀) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.     

Weak localization in bilayer graphene

We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance--a signature of weak localization--is observed at different carrier densities, including the electroneutrality region. It is very different, however, from the weak localization in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide intervalley scattering.     

Hot electrons in Si inversion layer

The energy losses per electron to phonons (both acoustic and optical) are calculated for Si(100) inversion layer taking the subband structure of electron energy spectrum fully into account. The electron mobility variations with applied field are studied by energy balance method. We examine two extreme cases: (1) the intervalley transitions connect any pair of subbands in respective valleys with the same transition matrix; (2) the intervalley transitions connect only the lowest subbands in each valley. It turns out that we can choose the magnitude of intervalley transition amplitude such that experimental data lie in between the theoretical results in two cases mentioned above at both lattice temperatures T = 77 and 300 K.     

Two-phonon resonant Raman scattering at the indirect exciton in silver chloride

Resonant Raman scattering in AgCl is reported for the first time. With excitation in the indirect absorption edge at 1.8K the observed scattering processes involve pairs of momentum-conserving TA(L) and LA(L) phonons with energies of 8.2 meV and 12.9 meV, respectively. The dependence of the scattered intensity on excitation energy suggests that, in contrast to AgBr, intravalley scattering by long wavelength acoustic phonons and intervalley scattering are negligibly small, the main relaxation mechanism of the free exciton being self-trapping. Some enhancement in the 2LO scattering intensity observed is probably due to resonance with the lowest direct exciton.     

Exciton relaxation by intervalley scattering in AgBr

By resonant Raman measurements at low temperatures intervalley scattering is demonstrated to be an efficient relaxation mechanism of the free indirect exciton in AgBr. The observed strongly enhanced scattering lines are attributed to TA(X) and LA(X) phonons connecting different L-points in the Brillouin zone. Analyzing the energy dependence of the line intensities the relative contributions of different exciton relaxation processes to the total exciton lifetime are estimated.