Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors

Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm＇s law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interracial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.     

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

For ferromagnetic metal （FM）/semiconductor （SO） structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

Current and Shot Noise in a Quantum Dot Coupled to Ferromagnetic Leads in the Kondo Regime

Using the Keldysh nonequilibrium Green function technique, we study the current and shot noise spectroscopy of an interacting quantum dot coupled to two ferromagnetic leads with different polarizations in the Kondo regime. General formulas of current and shot noise are obtained, which can be applied in both the parallel （P） and antiparallel （AP） alignment cases. For large polarization values, it is revealed that the behaviour of differential conductance and shot noise are completely different for spin up and spin down configurations in the P alignment case. However, the differential conductance and shot noise have similar properties for different spin configurations in the P alignment case with the small polarization value and in the AP alignment case with any polarization value.     

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.     

Spin-dependent negative differential conductance in transport through single-molecule magnets

Transport properties are theoretically studied through an anisotropy single-molecule magnet symmetrically connected to two identical ferromagnetic leads. It is found that even though in parallel configuration of leads’ magnetizations, the total current still greatly depends on the spin polarization of leads at certain particular bias region, and thus for large polarization a prominent negative differential conductance (NDC) emerges. This originates from the joint effect of single-direction transitions and spin polarization, which removes the symmetry between spin-up and spin-down transitions. The present mechanism of NDC is remarkably different from the previously reported mechanisms. To clarify the physics of the NDC, we further monitored the shot noise spectroscopy and found that the appearance of the NDC is accompanied by the rapid decrease of Fano factor.     

Specific Heat of a Two-Layer Magnetic Superlattice

The specific heats of both a two-layer ferromagnetic superlattice and a two-layer ferrimagnetic one are studied. It is found that the spin quantum numbers, the interlayer and intralayer exchange couplings, the anisotropy, the applied magnetic field, and the temperature all affect the specific heat of these superlattices. For both the ferromagnetic and ferrimagnetic superlattices, the specific heat decreases with increasing the spin quantum number, the absolute value of interlayer exchange coupling, intralayer exchange coupling, and anisotropy, while it increases with increasing temperature at low temperatures. When an applied magnetic field is enhanced, the specific heat decreases in the twolayer ferromagnetic superlattice, while it is almost unchanged in the two-layer ferrimagnetic superlattice at low field range at low temperatures.     

Electron transport for a laser-irradiated quantum channel with Rashba spin-orbit coupling

We investigate theoretically the electron transport for a two-level quantum channel （wire） with Rashba spinorbit coupling under the irradiation of a longitudinally-polarized external laser field at low temperatures. Using the method of equation of motion for Keldysh nonequilibrium Green function, we examine the time-averaged spin polarized conductance for the system with photon polarization parallel to the wire direction. By analytical analysis and a few numerical examples, the interplay effects of the external laser field and the Rashba spin-orbit coupling on the spinpolarized conductance for the system are demonstrated and discussed. It is found that the longitudinally-polarized laser field can adjust the spin polarization rate and produce some photon sideband resonances of the conductance for the system.     

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration.The contributions of the ’hard gap’ energy,Coulomb interaction,correlation energy,and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model.By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model,the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.     

Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers

In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.     

Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.     

Study on gamma response function of E J301 organic liquid scintillator with GEANT4 and FLUKA

The gamma response function is required for energy calibration of EJ301 （5 cm in diameter and 20 cm in height） organic liquid scintillator detector by means of gamma sources. The GEANT4 and FLUKA Monte Carlo simulation packages were used to simulate the response function of the detector for standard 22Na, 60Co, 137Cs gamma sources. The simulated results showed a good agreement with experimental data by incorporating the energy resolution function to simulation codes. The energy resolution and the position of the maximum Compton electron energy were obtained by comparing measured light output distribution with simulated one. The energy resolution of the detector varied from 21.2% to 12.4% for electrons in the energy region from 0.341 MeV to 1.12 MeV. The accurate position of the maximum Compton electron energy was determined at the position 81% of maximum height of Compton edges distribution. In addition, the relation of the electron energy calibration and the effective neutron detection thresholds were described in detail. The present results indicated that both packages were suited for studying the gamma response function of EJ301 detector.     

Specific Heat and Charge Density of Quasi-One-Dimensional Interchain Coupling Organic Ferromagnets

On the basis of a generalized SSH model, an organic polymer ferromagnet theory is proposed at the finite temperature in the self-consistent mean field approximation, and the specific heat and charge density of the quasione-dimensional interehain coupling organic ferromagnets are presented. We find that an obvious feature is to present itself the round peak for the specific heat with the temperature. This indicates unambiguously the presence of the phase transition in the system. The transition temperature plays down with increasing of the interchain coupling t2 or decreasing of the electron repulsion u. The curves of charge density with the temperature debase monotonously. This result illustrates that the higher the temperature is, the more electrons are excited.     

Ferrimagnetism and metal–insulator transition in an organic polymer chain

The ferrimagnetism and quantum phase transition of a bipartite lozenge periodic Anderson-like organic polymer, in which the localized f electrons hybridize with the odd site conduction orbitals, are investigated by means of Green＇s function theory. The ground state turns out to be gapless ferrimagnetism. At a finite temperature, the ferrimagnetic-to- paramagnetic phase transition takes place. The Kondo screenings and Ruderman-Kittel-Kasuya-Yosida （RKKY） inter- action can reduce and increase the transition temperature, respectively. Two Kondo screenings compete with each other, giving rise to the localized f electron spin screened antiferromagnetically. Accordingly, in a magnetic field, all spins are aligned along the chain easily, which is associated with metal-insulator transition. Furthermore, in a temperature-field plane, we reveal the gapless and spin polarized phases, which are characterized by susceptibility and specific heat, and whose behaviours are determined by the competition between the up-spin and down-spin hole excitations.     

Effect of traps' adjacency on the electric field dependence of mobility in organic systems

In some organic materials, varying the finite distance between adjacent carrier traps modifies the Coulomb potential around each trap, resulting in a more complex field-dependence of mobility, differing from（but not incompatible with） the usually considered relationship of ln μ∝E^1/2, a relationship which has been successfully explained by the Poole–Frenkel effect. To investigate the influence of the adjacency of traps, a model system is proposed, which consists of two traps separated by distance α. Our numerical calculation shows that with increasing α, the dependence of mobility on the electric field changes from linear to exponential. Moreover, beyond a certain large α, i.e., as the distance to the nearest trap approaches infinity, the proposed model is essentially the same as the Poole–Frenkel effect. The proposed model accounts for the effect of the energy barrier shape, especially the effect of the location of the potential-energy maximum, a phenomenon which is not accommodated in the Poole–Frenkel model. Because the model assumes the Coulomb interaction between the adjacent traps, it applies to those charged traps which may exist in organic materials for various reasons.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.     

Properties of transistor based C60 thin film on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.