Optical properties of mechanically compressed K<Subscript>2</Subscript>SO<Subscript>4</Subscript> crystals

The effect of a uniaxial mechanical compression (σ_m ≤ 100 bar) on the spectral dependences (300–800 nm) of the birefringence Δn _i and refractive indices n _i of K₂SO₄ crystals is studied. The electronic polarizabilities, refractions, and parameters (λ_0i , B _1i ) of ultraviolet oscillators of mechanically compressed crystals are calculated. It is shown that the dispersions of Δn _i(λ) and n _i(λ) are normal and sharply increase near the absorption edge. It is found that the uniaxial compression changes the value of the dispersions dΔn _i/dλ and dn _i/dλ rather than their character. It is ascertained that the simultaneous action of the compressions σ_x and σ_z, as well as of σ_y and σ_z, leads to the appearance of new isotropic states in the K₂SO₄ crystal, which manifests itself in the equality of corresponding birefringences. It is shown that the baric dependences n _i(σ) are determined by the change in the density of oscillators (～30%), by the shift of the absorption edge and effective band maximum and by the change in the oscillator strength (～70%).     

Photoabsorption cross section of the Thomas-Fermi atom

The photoabsorption cross section σ(ω) and the distribution of oscillator strengths df/dω [these values are related as σ=(2π²e²/mc)(df/dω)] were determined for an atom with a large Z value using the semiclassical approach. These values were found for low frequencies with the use of the Vlasov kinetic equations, which were numerically solved by the method of particles. The asymptotic behavior of the distribution of oscillator strengths at high frequencies was determined by semiclassical equations for the photoabsorption cross section of electron shells in a Coulomb potential. The asymptotic equations were used to suggest an interpolation equation for the distribution of oscillator strengths over the whole Thomas-Fermi frequency range 27 eV ? ?ω ? 27Z² eV. This equation was used to calculate the logarithmic mean excitation energy, which appears in problems of ionization loss of charged particles. The distribution of oscillator strengths in a neutral atom allows the radiative properties of dense matter to be determined.     

Phase transitions of SC(NH<Subscript>2</Subscript>)<Subscript>2</Subscript> ferroelectrics in Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-based nanoporous matrices

Temperature dependences of the linear permittivity ε' and the third harmonic amplitude γ_3ω of composites prepared by introducing ferroelectrics SC(NH₂)₂ into matrices of porous aluminum oxide Al₂O₃ with pore sizes 60 and 100 nm are determined. It is found that temperature T _c of the ferroelectric phase transition and the temperature T _i of the phase transition from incommensurable phase to the paraphrase increase significantly. The transition shifts increase as pore diameters decrease.     

“Negative” gap in the spectrum of localized states of (In<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.9</Subscript>(SrO)<Subscript>0.1</Subscript>

The reflection R(?ω), transmission t(?ω), absorption α(?ω), and refraction n(?ω) spectra of polycrystalline In₂O₃–SrO samples with low optical transparency, which contain In₂O₃ and In₂SrO₄ crystallites with In₄SrO_{6 + δ} interlayers, are examined. In the region of small ?ω values, the reflection coefficient decreases as the resistance of samples saturated with oxygen increases. Spectral dependences n(?ω) and α(?ω) are calculated using the classical electrodynamics relations. The results are compared to the data based on the t(?ω) spectra. The calculated absorption spectra are interpreted within the model with an overlap of tails of the density of states in the valence band and in the conduction band. A “negative” gap E _gn in the density of states with a width from–0.12 to–0.47 eV is formed in highly disordered samples in this model. It is demonstrated that the high density of defects and the band of deep acceptor states of strontium in the major matrix In₂O₃ phase are crucial to tailing of the absorption edge and its shift toward lower energies. The direct gap E _gd = 1.3 eV corresponding to the In₂SrO₄ phase is determined. The energy band diagram and the contribution of tunneling, which reduces the threshold energy for interband optical transitions, are discussed.     

Dielectric Properties of Nanoporous Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Films Filled with Ferroelectric SC(NH<Subscript>2</Subscript>)<Subscript>2</Subscript>

Temperature dependences of permittivity ε′ and third harmonic amplitude γ_3ω of nanocomposites obtained by embedding ferroelectric SC(NH₂)₂ in porous alumina films with pore sizes of 60 and 100 nm are studied. A substantial increase in the temperatures of ferroelectric phase transition T_c1 and T_c2 and that of phase transition T_i from incommensurate phase to paraphase are also observed. The temperatures of all phase transitions are found to rise as pore diameters shrink.     

Energy spectrum of holes in Sb<Subscript>2</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution according to the data on the transfer phenomena

The temperature dependence of the Hall coefficient of a single crystal of the p-Sb₂Te_2.9Se_0.1 solid solution grown by the Czochralski technique is studied in the temperature range 77–450 K. The data on the Hall coefficient of the p-Sb₂Te_2.9Se_0.1 are analyzed in combination with the data on the Seebeck and Nernst–Ettingshausen effects and the electrical conductivity with allowance for interband scattering. From an analysis of the temperature dependences of the four kinetic coefficients, it follows that, at T < 200 K, the experimental data are qualitatively and quantitatively described in terms of the one-band model. At higher temperatures, a complex structure of the valence band and the participation of the second-kind additional carriers (heavy holes) in the kinetic phenomena should be taken into account. It is shown that the calculations of the temperature dependences of the Seebeck and Hall coefficients performed in the two-band model agree with the experimental data with inclusion of the interband scattering when using the following parameters: effective masses of the density of states of light holes m_d1^*≈ 0.5m₀ (m₀ is the free electron mass) and heavy holes m_d2^*≈ 1.4m₀, the energy gap between the main and the additional extremes of the valence band ΔE_v ≈ 0.14 eV that is weakly dependent on temperature.     

CeAlO<Subscript>3</Subscript> crystals: Preparation and study of their electrical and optical characteristics

Crystals of cerium aluminate with perovskite structure were obtained using the cold-crucible technique. The electrical and optical properties of cerium aluminate were studied in air in the range 300–1300 K. The main characteristics of CeAlO₃ at T=300 K are a follows: electrical conductivity σ=10^?7 S/cm, dielectric permittivity ?=3000–10000 (both measured at a frequency of 1000 Hz), thermal band-gap width ΔE=2.3±0.5 eV, and optical width δE=2.65±0.25 eV, which decreases at a rate of ?0.62×10^?3 eV/K with increasing temperature in the 300-to 1500-K interval.     

Anisotropy of the Complex Permittivity of the Kagome-Staircase Compounds Co<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript> and Ni<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript>: Experiment and Ab Initio Calculations

The anisotropy of the components of the complex permittivity of vanadate Co₃V₂O₈ and Co₃V₂O₈ single crystals in the paramagnetic phase are studied by optical ellipsometry in the spectral region 0.5–5.0 eV. Our experimental results support the weak anisotropy of the optical response detected earlier for axes a and c. The optical properties are also investigated along axis b. The properties of both compounds are compared. The optical spectra of both compounds along axis b are shifted toward low energies as compared to axes a and c. The maximum of the main interband absorption band of Co₃V₂O₈ is shifted toward low energies by 0.25–0.3 eV as compared to Co₃V₂O₈. The electronic structure parameters of both compounds are determined. Optical function spectra are analyzed using the results of ab initio band calculations.     

Electrical conductivity and permittivity of the one-dimensional superionic conductor LiCuVO<Subscript>4</Subscript>

The electrical conductivity σ^a and permittivities ?^a, ?^b, and ?^c of a LiCuVO₄ single crystal have been measured along the a, b, and c crystallographic axes, respectively, in the temperature range 300–390 K at a frequency of 10³ Hz. The temperature dependences σ(T) and ?(T) were found to be typical for superionics.     

Electronic and optical properties of Fe<Subscript>2</Subscript>SiO<Subscript>4</Subscript> under pressure effect: ab initio study

We report first-principles studies the structural, electronic, and optical properties of the Fe₂SiO₄ fayalite in orthorhombic structure, including pressure dependence of structural parameters, band structures, density of states, and optical constants up to 30 GPa. The calculated results indicate that the linear compressibility along b axis is significantly higher than a and c axes, which is in agreement with earlier work. Meanwhile, the pressure dependence of the electronic band structure, density of states and partial density of states of Fe₂SiO₄ fayalite up to 30 GPa were presented. Moreover, the evolution of the dielectric function, absorption coefficient (α(ω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.     

Long-time relaxation phenomena in Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) single crystals

Long-time polarization relaxation in the temperature range where PBSN-6 single crystals reside in the relaxor state was studied. An analysis of the time dependence of the permittivity ε′(t) performed at measuring frequencies from 1 Hz to 1 kHz in weak electric fields E₀ showed that the relaxation (or freezing) times derived by extrapolating relations of the type ε′(t) ～ log(t/t₀) and ε′(t) ～ exp{?[ln(t/t₀)]_β} range from 10⁸ to 10¹¹ min and depend substantially on the bias voltage applied to the sample. A study of the pattern of the dielectric response in moderate and strong infralow-frequency fields revealed that, after a sample was maintained under a bias lower than the coercive force, it no longer exhibited the additional anomalies in the amplitude dependences of the effective loss tangent tan_eff(E₀) than were observed in a thermally recuperated sample.     

Metal-insulator transition in whiskers of the NbS<Subscript>3</Subscript> quasi-one-dimensional conductor under pressure

The effect of pressure on the conduction of the NbS₃ quasi-one-dimensional conductor is studied. A pressure-induced insulator-metal transition is observed. The transition is accompanied by an increase in conductivity by six orders of magnitude at room temperature. Under pressures of 3–4 GPa, an additional phase transition appears in the temperature dependences of resistance. This transition manifests itself in an increase in the local conduction activation energy. The quantity dln(R)/d(1/T) reaches its maximum under pressures of 4–5 GPa, and the temperature position of the maximum of dln(R)/d(1/T) depends on the pressure as T* ≈ 7.5P + 202 K.     

Kramers–Kronig Relations in Representation of Modulation Polarimetry by an Example of the Transmission Spectra of GaAs Crystal

The increments of the real and imaginary components of the complex refractive index ΔN = Δn–iΔk of a lightly doped GaAs crystal with a donor concentration of ~10¹⁶ cm^–3 have been measured using modulation polarimetry. It is shown that, within this representation, the birefringence and dichroism spectra (Δn(ω) and Δk(ω), respectively) obtained in the transparency window of a sample subjected to probe strain are derivatives of the corresponding functions: Δn(ω) ≈ dn/dω and Δk(ω) ≈ dk/dω. The experimental characteristics and primary dependences n(ω) and k(ω) derived from them by graphical integration are in agreement with the results of other researchers and measurements carried out by independent methods. The results obtained are compared (taking into account the integral (Kramers–Kronig) relations) with the resonance parameters: amplitude and phase in the Drude–Lorenz model. Agreement between the experimental characteristics and theoretical model predictions can be obtained by choosing an appropriate value of resonance damping parameter.     

A first-principle study on the phase transition,electronic structure,and mechanical properties of three-phase ZrTi<Subscript>2</Subscript> alloy under high pressure*

We employed density-functional theory (DFT) within the generalized gradient approximation(GGA) to investigate the ZrTi₂ alloy, and obtained its structural phase transition,mechanical behavior, Gibbs free energy as a function of pressure, P-V equation of state,electronic and Mulliken population analysis results. The lattice parameters andP-V EOS for α, β and ω phases revealed by ourcalculations are consistent with other experimental and computational values. The elasticconstants obtained suggest that ω-ZrTi₂ and α-ZrTi₂ are mechanically stable, and that β-ZrTi₂ is mechanically unstableat 0 GPa, but becomes more stable with increasing pressure. Our calculated resultsindicate a phase transition sequence of α → ω → β forZrTi₂. Both thebulk modulus B and shear modulus G increase linearly withincreasing pressure for three phases. The G/B values illustrated goodductility of ZrTi₂alloy for three phases, with ω<α<β at0 GPa. The Mulliken population analysis showed that the increment of d electron occupancystabilized the β phase. A low value for B '₀ is the feature of EOS for ZrTi₂ and this softness in the EOS isrepresentative of pressure induced s-d electron transfer.     

Absorption spectra of some radiation-doped A<Subscript>3</Subscript>B<Subscript>5</Subscript> compounds

Temperature dependences of the absorption coefficient in A₃B₅ crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 10¹⁷ electron/cm² are studied. A low-lying E_v + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga_1–xIn_xAs, InP, and InP〈Fe〉).     

Divalent rare-earth ions in LaF<Subscript>3</Subscript> crystals

The optical spectra and electric conductivity of LaF₃ crystals doped with 0.01, 0.1, and 0.3 mol % YbF₃, where Yb was partly or completely recharged to the divalent state, are studied. The long-wavelength absorption band of 370 nm is caused by electrons transitioning from state 4f ¹⁴ to the level of anion vacancies. The remaining bands at 300–190 nm are caused by 4f ¹⁴–5d ¹4f ¹³ transitions in Yb²⁺. The bulk electric conductivity and peaks of the dielectric losses of LaF₃–Yb²⁺ crystals are caused by Yb²⁺–anion vacancy dipoles. The activation energy of the reorientation of Yb dipoles is 0.58 eV. The optical and dielectric properties of Yb²⁺ centers are compared to those of Sm²⁺ and Eu²⁺ centers studied earlier in LaF₃ crystals.     

Refractometry of mechanically compressed (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>SO<Subscript>4</Subscript> crystals

The effect of uniaxial mechanical pressure σ _m ≤ 150 bar on the spectral (300–800 nm) dependence of the birefringerence Δn _i and refractive indices n _i of (NH₄)₂SO₄ crystals has been investigated. It is shown that the dispersion of n _i (λ) and Δn _i (λ) is normal and sharply increases with approach to the absorption edge. It is established that uniaxial pressure does not change the character of the dispersions dn _i /dλ and dΔn _i /dλ and only affects their magnitudes. It is shown that the increase in the refractive indices under uniaxial stress is mainly due to the increase in the refraction caused by the increase in the band gap and long-wavelength shift of the UV absorption band maximum.     

Self-organization of atomic order and electronic structure in LaSrMnO films

A linear relationship between the critical temperatures T_max and T_min in the temperature dependences of the resistance of La_0.6Sr_0.2Mn_1.2O₃ single-crystal films that have a mesoscopic irregularity (metallic clusters in an insulating matrix) is found. A correlation between the atomic order and electronic structure of the films is studied by taking X-ray diffraction patterns and optical absorption spectra. It is shown that a rise in T_max and a simultaneous decrease in T_min cause correlated local changes in cluster areas of the structure. Namely, the volume occupied by a family of Mn-O planes with large interplanar spacings (d=2.04–2.08 Å) shrinks, while the volume occupied by a family of closer spaced (d=1.90–1.99 Å) planes grows. In the electronic subsystem, the density of states at ?ω=1.5 and 2.4 eV, which are due to Mn³⁺ and Mn⁴⁺ ions, increases, and the contribution from Mn²⁺ states at ?ω=0.9 eV decreases. As the charge states associated with Mn³⁺ and Mn⁴⁺ ions become dominant, the Mn-O binding energy grows. As a result, the contribution of the structural states with smaller d increases, thereby raising the density of states in the electronic subsystem at energies between 0.5 and 2.7 eV. The effect of self-organization in the multicomponent LaSrMnO system shows up in the transition from the heavily distorted rhombohedral to the less distorted orthorhombic structure.     

Linear and nonlinear optical spectroscopy of gadolinium iron borate GdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The optical spectra and the second-harmonic generation (SHG) are studied in a noncentrosymmetric GdFe₃(BO₃)₄ magnet. In the region of weak absorption (α～20–400 cm^?1) below ～3 eV, three absorption bands are distinguished, which can be unambiguously assigned to forbidden electronic transitions from the ground ⁶A₁ state of the Fe³⁺ ion to its excited states ⁴T₁(～1.4 eV), ⁴T₂(～2 eV), and ⁴A₁, ⁴E(～2.8 eV). Intense absorption begins in the region above 3 eV (α～2–4×10⁵ cm^?1), where two bands at ～4.0 and 4.8 eV are observed, which are caused by allowed electric dipole charge-transfer transitions. The spectral features of SHG in the 1.2–3.0-eV region are explained by a change in the SHG efficiency caused by a change in the phase mismatch. It is shown that in the weak absorption region, phase matching can be achieved for SHG.