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1.
人工裁剪制备石墨纳米结构   总被引:1,自引:0,他引:1       下载免费PDF全文
采用不同的方法裁剪高定向热解石墨(HOPG),制备纳米尺寸的石墨条.首先,发现用聚焦离子束(镓离子)刻蚀高定向热解石墨,可以得到边缘整齐程度在几十纳米的石墨条,另外,用 电子束曝光和反应离子刻蚀的工艺,可以得到最小尺寸为50 nm的纳米石墨图型 (nano-size d graphite pattern,纳米尺寸的多层石墨结构).采用了三种不同的方案制备反应等离子刻 蚀过程中需要的掩膜,分别是PECVD生长的SiO2掩膜,磁控溅射的方法生长的Si O2掩膜和PMMA光刻胶掩膜,并将三种方案的刻蚀结果做了对比. 关键词: 高定向热解石墨 聚焦离子束刻蚀 电子束曝光 反应离子刻蚀  相似文献   

2.
陆乃彦  翁雨燕 《物理学报》2014,63(22):228104-228104
纳米压印模板通常需要经过电子束光刻、电子束沉积、光刻胶剥离、反应离子刻蚀等一系列复杂工艺获得,这使得纳米压印模板的制作难度大,成本高. 寻找一种灵活简单的纳米压印模板制备方法以提升纳米压印模板的制作效率,是广泛应用纳米压印技术的研究重点和难点. 本文以写好光栅结构的电子束光刻胶层为母模板,获得聚二甲基硅氧烷软模板,并以此为模板对共轭高分子聚(9,9-二辛基)芴薄膜进行纳米压印,实现光栅结构转移,成功制备出纳米光栅结构的共轭高分子薄膜. 偏振吸收谱和透射电镜结果表明,纳米压印实现图案转移的同时,还可以将共轭高分子的主链控制在光栅条纹方向,这对有机发光器件性能的提升具有重要的意义. 研究结果还表明,应用该方法同样可以对聚(9,9-二辛基芴共苯并噻二唑)薄膜进行光栅图案化,同时实现其取向控制. 关键词: 纳米压印 软模板共轭高分子 分子链取向  相似文献   

3.
纳米压印多孔硅模板的研究   总被引:2,自引:0,他引:2       下载免费PDF全文
张铮  徐智谋  孙堂友  徐海峰  陈存华  彭静 《物理学报》2014,63(1):18102-018102
纳米压印模板通常采用极紫外光刻、聚焦离子束光刻和电子束光刻等传统光刻技术制备,成本较高.寻找一种简单、低成本的纳米压印模板制备方法以提升纳米压印光刻技术的应用成为研究的重点与难点.本文以多孔氧化铝为母模板,采用纳米压印光刻技术对纳米多孔硅模板的制备进行了研究.在硅基表面成功制备出纳米多孔阵列结构,孔间距为350—560 nm,孔径在170—480 nm,孔深为200 nm.在激发波长为514 nm时,拉曼光谱的测试结果表明,相对于单面抛光的硅片,纳米多孔结构的硅模板拉曼光强有了约12倍左右的提升,对提升硅基光电器件的应用具有重要的意义.最后,利用多孔硅模板作为纳米压印母模板,通过热压印技术,成功制备出了聚合物纳米柱软模板.  相似文献   

4.
李卫  徐岭  孙萍  赵伟明  黄信凡  徐骏  陈坤基 《物理学报》2007,56(7):4242-4246
以自组装单层胶体小球阵列为掩模,采用直接胶体晶体刻蚀技术在硅表面制备二维有序尺寸可控的纳米结构.在样品制备过程中,首先通过自组装法在硅表面制备了直径200nm的单层聚苯乙烯(PS)胶体小球的二维有序阵列;然后对样品直接进行反应离子刻蚀(RIE),以氧气为气源,利用氧等离子体对聚苯乙烯小球和对硅的选择性刻蚀作用,通过改变刻蚀时间,制备出不同尺寸的PS胶体小球的有序单层阵列;接着以此二维PS胶体单层膜为掩模,以四氟化碳为气源对样品进行刻蚀;最后去除胶体球后得到二维有序的硅柱阵列.SEM和AFM的测量结果表明:改变氧等离子体对胶体球的刻蚀时间和四氟化碳对硅的刻蚀时间,可以控制硅柱的尺寸以及形貌,而硅柱阵列的周期取决于原始胶体球的直径. 关键词: 胶体晶体刻蚀 纳米硅柱阵列  相似文献   

5.
孔明  魏仑  董云杉  李戈扬 《物理学报》2006,55(2):770-775
采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa. 进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低. 关键词: 2O3纳米多层膜')" href="#">TiN/Al2O3纳米多层膜 外延生长 非晶晶化 超硬效应  相似文献   

6.
 采用硅的局部氧化技术以及湿法刻蚀技术,利用2.6 μm的光刻掩模板在n型硅片上形成了栅极孔径为1 μm的场发射阴极的栅极空腔阵列,实现了用大阵点尺寸的栅极掩模板制备较小尺寸栅孔阵列。硅的湿法刻蚀溶液采用各向同性的硝酸和氢氟酸混合溶液,刻蚀后空腔的深度和宽度均随刻蚀时间线性增加。同时,由于刻蚀溶液具有较高的Si/SiO2 刻蚀选择比,栅极孔径随刻蚀时间增大的速度远低于深度和宽度增大的速度,栅极孔径主要取决于掩模的尺寸和氧化层的厚度。通过选择掩模板的尺寸以及氧化层的厚度,采用局部氧化技术和湿法刻蚀技术能够制备出微米或亚微米的场发射阴极的栅极空腔阵列。  相似文献   

7.
SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应   总被引:1,自引:0,他引:1       下载免费PDF全文
赵文济  孔明  黄碧龙  李戈扬 《物理学报》2007,56(3):1574-1580
采用反应磁控溅射法制备了一系列不同SiO2层厚度的AlN/SiO2纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明,由于受AlN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应. SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低. 关键词: 2纳米多层膜')" href="#">AlN/SiO2纳米多层膜 赝晶化 应力场 超硬效应  相似文献   

8.
研究了Si3N4层在ZrN/Si3N4纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响.一系列不同Si3N4层厚度的ZrN/Si3N4纳米多层膜通过反应磁控溅射法制备.利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.结果表明,由于受到ZrN调制层晶体结构的模板作用,溅射条件下以非晶态存在的Si3N4层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体,ZrN/Si3N4纳米多层膜形成共格外延生长的柱状晶,并相应地产生硬度升高的超硬效应.Si3N4随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.  相似文献   

9.
乌晓燕  孔明  李戈扬  赵文济 《物理学报》2009,58(4):2654-2659
采用反应磁控溅射法制备了一系列具有不同Si3N4层厚度的AlN/Si3N4纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si3N4层在AlN/Si3N4纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si3N4层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si3N4纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si3N4随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si3N4纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词: 3N4纳米多层膜')" href="#">AlN/Si3N4纳米多层膜 外延生长 赝晶体 超硬效应  相似文献   

10.
采用纳米球刻蚀(nanosphere lithography)技术,以自组装的聚苯乙烯纳米小球(polystyrene,PS小球)的单层膜为掩模,制备出二维有序的CdS纳米阵列.利用扫描电子显微镜(SEM)对样品结构进行了表征,用紫外—可见分光光度计对样品光学性质进行了分析.结果表明:制备的二维CdS纳米阵列是高度有序的,且与作为掩模的纳米小球的原始尺寸及排布结构一致;禁带宽度为2.60eV,相对于体材料的2.42eV,向短波长蓝移了0.18eV,表现出CdS材料在纳米结构点阵中的量子尺寸效应;CdS纳米 关键词: 纳米球刻蚀 二维CdS纳米有序阵列  相似文献   

11.
Nanomold is the most important part for the nanoimprint technique which determines the obtained feature size. We prepared relievo nanomolds by selectively etching of the a-Si/ SiNx multilayer thin-film deposited by a PECVD system. SEM results showed that the mold feature sizes were controllable on the nanometer scale and the structures depended on the conditions of the film preparation and the following etching process. Ultrasonic processing and short etching time are necessary to get the desired patterns of good quality by the chemically selective etching process, especially for strips thinner than 20 nm. The substrate surface morphology also affects the mold structures greatly.  相似文献   

12.
SiO2-TiO2 sol-gel films axe deposited on SiO2/Si by dip-coating technique.The SiO2-TiO2 strips are fabricated by laser direct writing using an ytterbium fiber laser and followed by chemical etching.Surface structures,morphologies and roughness of the films and strips are characterized.The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in structure and a shrinkage concave groove forms if the film is irradiated by laser beam.The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time.But the roughness of laser irradiated area increases more than thalt of non-irradiated area under the same etching time.After being etched for 28 s,the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.  相似文献   

13.
为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo_2C/B_4C,Mo/B_4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo_2C,B_4C,单层膜,周期厚度为3.5 nm,30对的Mo_2C/B_4C,Mo/B_4C周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo_2C/B_4C多层膜压应力要远小于Mo/B_4C多层膜,且成膜质量与Mo/B_4C相当。因此Mo_2C/B_4C是应用于6.7 nm反射镜较好的多层膜材料组合。  相似文献   

14.
The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.  相似文献   

15.
Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films were investigated by utilizing in situ resistance measurements. It was found that the crystallization temperature increased firstly with increasing Si layer thickness within the multilayer films, and then remained almost unchanged at 170°C. The multilayer films have the merits of both good thermal stability and fast phase-change speed. An increase in crystallization temperature by around 95°C was observed for the multilayer films when the Sb80Te20 layer thickness was reduced to 3 nm. Cross-sectional transmission electron microscopy (TEM) observations revealed that Si/Sb80Te20 nanocomposite multilayer films had layered structures with clear interfaces. The reversible phase change between set and reset states was verified in phase-change random access memory (PCRAM) cell based on [Si (1 nm)/Sb80Te20 (5 nm)]17 multilayer film.  相似文献   

16.
The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc. With a 2.45 GHz. 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have deposited DLC coatings on the substrates like stainless steel, Cu-Be, Cu and Si. The deposited coatings have been characterized by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ∼95% sp3 bonded carbon in the films. The films are unform with golden yellow color. The films are found to be excellent insulators. The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900 nm.  相似文献   

17.
利用单分散的SiO2微球自组装制备了含一种尺寸微球的SiO2胶体晶体和含多种尺寸微球的多层异质结构。对含一种尺寸微球的SiO2胶体晶体进行煅烧和刻蚀处理后,胶体晶体中空隙所占比例大于立方密堆结构的26%,形成了非密堆结构,而且刻蚀时间越长,空隙比例越大。在同样的热处理和刻蚀条件下,微球尺寸越小的胶体晶体被刻蚀的程度越高,结构中空气空隙所占的比例越大。对SiO2多层异质结构经过煅烧和刻蚀处理后,得到了空隙梯度变化的多层结构,以此为模板制备了密度梯度变化的聚苯乙烯多孔薄膜。薄膜各层之间形成了平滑的过渡,没有显示出明显的层间缺陷,且孔与孔之间没有出现3维有序多孔结构中常见的大的连通孔道。  相似文献   

18.
林捷  王如志  盖红  王波  严辉 《发光学报》2015,36(1):27-32
采用脉冲激光沉积(PLD)方法在湿法腐蚀后的Si(100)衬底上制备了Y2O3:Bi,Yb减反转光薄膜。所制备的薄膜在300~800 nm波长范围内的平均反射率最低至5.28%,同时在晶体硅太阳能电池最佳响应范围内的980 nm附近表现出了良好的下转光特性。与非减反下转光薄膜相比较,具有减反结构的Y2O3:Bi,Yb下转换薄膜的转光强度有了明显的提升。随着衬底腐蚀时间在一定范围内的延长,Bi3+和Yb3+的发射峰强度线性增大。该减反转光薄膜为太阳能电池效率提高提供了一种简单可行的方法。  相似文献   

19.
CoC composite films and Co/C multilayer films have been prepared by a method incorporating ion beam sputtering and plasma chemical vapor deposition. It has been found that the structure and magnetic properties of both the Co-C composite and the Co/C multilayer films depend strongly on the substrate temperature during deposition. The Co-C composite film deposited at room temperature is amorphous, with relatively low saturation magnetization and coercivity. On the other hand, the film deposited at 250 °C is composed of fine Co crystallites separated by amorphous C or Co-C phase. As a result, both the saturation magnetization and coercivity are increased compared with the film deposited at room temperature. When deposited at room temperature, the Co/C multilayer film exhibits good periodicity, with a period of 70 nm (Co: 40 nm, C: 30 nm) and sharp and flat Co-C interfaces. High magnetization (602 emu/cm3) and low coercivity (1.6 Oe) are obtained for such a film. However, increasing the substrate temperature to 250 °C was found to be detrimental to the magnetic properties due to the formation of cobalt carbide at the Co-C interface. Received: 11 July 2000 / Accepted: 13 July 2000 / Published online: 30 November 2000  相似文献   

20.
Ni_(0.7)Zn_(0.3)Fe_2O_4/Co_(0.8)Fe_(2.2)O_4(NZFO/CFO) multilayer films are fabricated on Si(100) substrates by the chemical solution deposition method.The microstructure and magnetic properties are systematically investigated.The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 300 nm.The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films,which is in favor of the design and fabrication of modern electronic devices.  相似文献   

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