Anomalous plasma phenomena of hollow cathode arc discharge

Magnetically confined argon plasma produced by hollow cathode arc discharge has been studied in different experimental conditions, with discharge current from 10–50 A, vessel argon pressure between 10^–3 and 10^–4 torr (1 torr=133·32 Pa) and axial magnetic field up to 0·12 T. The plasma density measured by a cylindrical Langmuir probe is found to be 10¹⁹ to 4 × 10¹⁹ m^–3 and the electron temperatureT _e varies between 2·5 and 4·8 eV. When an external axial magnetic field is applied the plasma temperature decreases with the increase in the magnetic field intensity until it reaches a minimum value at 0·075T and then increases with the same rate. This has been interpreted as high frequency waves excitation due to electron beam-plasma interaction, which explains the electron density jumps with the magnetic field intensity. Enhanced plasma transport across the magnetic field is studied and classified as anomalous diffusion.     

Determination of the strain potential constant by means of the p-InSb photoconductivity spectra under uniaxial compression

The influence of uniaxial pressure (0 < P < 2600 kg/cm2) on the intrinsic photoconductivity (PC) spectrum of p-InSb at 93 and 15°K is investigated. At 77°K the carrier concentration and mobility in the specimens were, respectively, (1.4–3.2)·10¹⁴ cm^–3 and 7000 cm²/V. sec. It is established that the maximum in the PC(E_m) spectra under compression is shifted towards higher energies. In the low-compression range E_m/P=5·10^–6eV·cm²/kg, while E_m/P=1·10^–6eV·cm²/kg for P > 1000 kg/cm². It is shown that the shift of the maximum of the intrinsic PC spectra with pressure is due to the growC;th in the forbidden bandwidth (E_g), and the change in parameters characterizing carrier diffusion in the specimen bulk (the diffusion coefficient, lifetime, surface recombination velocity) plays no part. The change in E_m/P with pressure is explained by the influence of valence band splitting. The deformation potential constants of the valence band |b|=(1.7±0.3) eV and |d|=(4.4±0.8)eV are calculated on the basis of a comparison between experimentally obtained data and theoretical results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 159–162, February, 1976.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.     

The magnitude of the transferred charge in the silent discharge in oxygen

A pulse amplitude analyser was used to measure the distribution functions of the transferred charge in the silent discharge in oxygen under the atmospheric pressure. The charges transferred by one microdischarge were established from these distribution functions. Their magnitude varies from 3×10^–11 C to 1·3×10^–9 C on changing the width of the discharge gap from 0·2 mm to 3·2 mm, respectively.     

EPR study of neutron irradiated Ge-S glasses

The results of EPR measurements on neutron irradiated Ge-S glasses doped by Mn are presented. It has been found that the integrated neutron flux from 1·1 × 10¹⁵ n. cm^–2 to 1·5× × 10¹⁷n. cm^–2 has no detectable effect on the nearest neighbour surroundings of Mn²⁺ probing ions but increases the intensity of all EPR lines. A new EPR line was detected in Mn-doped Ge-S glasses irradiated with the highest neutron dose of 1·5 × 10¹⁷ n. cm^–2.     

Production and Application of the Langmuir Aggregates of Eosine with Cetyl Trimethyl Ammonium Bromide

The procedure of microphase adsorption–spectral correction is applied to the interaction of eosine Y (EO) to the micelles of cetyl trimethyl ammonium bromide (CTAB). The Langmuir aggregation of EO on CTAB occurs owing to microelectrostatic attraction. The results have shown that at pH 3.8, monomeric and micellar aggregates have the structure EO₅·CTAB₂ and (EO₅·CTAB₂)₃₉. The adsorption constant of an aggregate is 7.01·10⁵, its molar absorption coefficient is = 8.8·10⁴ liters·mole^–1·cm^–1 at 550 nm. Application of the aggregation of EO on CTAB gives satisfactory results for quantitative determination of cation surfaceactive agents (surfactants).     

Nuclear orientation study of the decay of204BiFe

The decay of²⁰⁴Bi nuclei (I =6⁺, T_1/2=11·22 h) oriented in an iron host was investigated on the JINR low-temperature nuclear orientation facility SPIN. The orientation parameterB ₂=1·17 (6) was obtained from the analysis of six prominent E1 gamma-transitions. From the measured normalized intensities of the gamma-rays observed some 70 values of multipole mixing ratios for the gamma-transitions in²⁰⁴Pb nucleus were determined for the first time. The spins 6, 6, 5 and 4 could be uniquely assigned to the²⁰⁴Pb negative parity levels at 3891·5 keV, 3768·4 keV, 3301·5 keV and 2338·2 keV, respectively. The spin-parity assignments of the levels at 4183·8 keV, 4094·2 keV, 3782·0 keV, 2506·9 keV and 2065·1 keV were confirmed as 6^–, 6^–, 5^–, 5^– and 5⁺, respectively. For the level at 3105·1 keV spin-parity 5^– was suggested and spinparity 7^– of the level at 2696·4 keV was called in question. The possible placements of the gammatransitions 3 1351·7 keV and 1353·4 keV in the decay scheme is discussed. The reorientation parameters for the long-living levels at 2264·2 keV (T _1/2=0·45 s) and 1273·9 keV (T _1/2= =265 ns) were determined asG ₂=0·41 (14) andG ₂=0·60 (17), respectively. For the isomeric level at 2185·7 keV (T _1/2=67·2 min) the value ofG ₂=0·88 (49) was proposed.The authors would like to express their thanks to T. I. Kracíková and M. Trhlík for the valuable discussions in the course of the evaluation of the experimental data.     

Nuclear spin lattice relaxation of58CoFe and60CoFe measured by the thermal cycling method

Thermal cycling of thin foil samples is used to measure nuclear spin lattice relaxation of dilute⁵⁸Co and⁶⁰Co in iron at polarizing fields up to 1.3 T. The relaxation rates for the two isotopes differ by a factor of 7.1; the good agreement between the high field values for ² C ₂, (2.93±0.15)·10¹⁵ K·s^–1·T^–2 (⁵⁸Co) and (3.01±0.06)·10¹⁵K·s^–1·T^–2 (⁶⁰Co) verifies the reliability of the experimental method. An enhancement factor model is introduced and shown to give an excellent reproduction of the observed field dependence of the relaxation.     

Formation of high-energy electron beams in gases of different densities

An investigation was made of the formation of beams of fast electrons in different gases at pressures of from 0.01 to 100 kPa. Plots were made of the dependences of the electron beam currents I_e on the gas pressure p for different electric field strengths E. The dependences I_e=f(p) for air were found to intersect the similar dependences for other gases (helium, nitrogen, neon, and argon) at a pressure of p=10.6 kPa and for E=2.3·10⁵ V·cm^–1. This fact is explained by the influence of the oxygen ions and atoms on the electron beam formation process. Another experimental result, the appearance of a minimum in the dependences I_e=f(p) for all gases, is explained by defocusing of the electron beam, the appearance of a reverse current, and magnetic neutralization of the beam. Electron beams were obtained having a pulse duration of 15–20 nsec and a current of 10⁵-10⁶ A/m² per unit cathode area.Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 67–70, June, 1993.     

Practical separation of silicon isotopes by IRMPD of Si2F6

Large-scale silicon isotope separation based on the IRMPD of natural Si₂F₆ has been carried out using a commercially available high power CO₂ TEA laser and a flow reaction system. The decomposition product SiF₄ containing 19–33% of ³⁰Si was obtained at a production rate of 1.5×10^–2–2.6×10^–2 mol·h^–1, depending on experimental parameters such as laser wavelength, laser fluence, pressure, and flow rate. SiF₄ containing 12% of ²⁹Si was obtained under slightly different conditions, i.e., at a shorter wavelength than that for ³⁰Si. When 39% of Si₂F₆ was decomposed at a slow flow rate, residual Si₂F₆ was found to have 99.7% of ²⁸Si. The production rate was 4.2×10^–2 mol·h^–1.     

Work-hardening in Fe-13·6 wt. % Cr single crystals between 77 and 800 K

Single crystals of Fe-13·6 wt. % Cr oriented for single slip were deformed in tension at temperatures between 77 and 800 K, at a nominal strain rate of 5·5×10^–5s^–1. The stress-strain curves were measured, stress relaxations were performed and the slip line structure was studied. The experimental results are qualitatively similar to those of pure iron and iron-silicon alloys studied earlier. The quantitative differences are due to the different effect of solute atoms on dislocation behaviour in iron alloys.     

Effect of deep dislocation levels in silicon on the properties of p-n junctions

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10^–7 sec to 3 · 10^–8 sec when the dislocation density N_d varies from 10⁷ cm^–2 to 5 · 10³ cm^–2. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N_d. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 81–84, January, 1988.     

The effect of adsorbed impurities on the surface properties of GaAs and the characteristics of electroluminescent p-n junctions

The effect of adsorbed copper and gold on the band bending, the steady-state photoconductivity, and the field-effect mobility in n-type GaA s has been studied. The light and electrical characteristics of electroluminescent p-n junctions have also been studied. It is shown that doping the GaA s surface with Cu and Au leads to an increase of the depleting band bending and to a decrease in the field-effect mobility. Copper, adsorbed at the surface of slices before diffusion, leads to a reduction of the radiative intensity of the p-junctions prepared on GaA s with an electron concentration of 1–6·10¹⁷ cm^–3, to a decrease in the cutoff voltage, and to an increase in the differential resistance of the forward branch of the volt-ampere characteristics. It is proposed that in the region of the experimental current (5·10^–2-10^–2) mA the presence of Cu in the electroluminescent p-n junctions leads not to a change in the injection mechanism but to an increase in the series resistance of the p-n junction.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 72–77, December, 1973.     

Parametrization of the radial distribution function and thermodynamic properties of the restricted primitive model of electrolyte solutions

Monte Carlo simulations for the restricted primitive model of 1-1 aqueous electrolyte solutions were performed on a minicomputer. The calculations covered the concentration range from 0·1 to 3 mol/dm³ and the ionic diameter varied from 2·0× ×10^–10 to 4·75×10^–10 m. On the basis of the Monte Carlo results a new analytical radial distribution function and excess internal energy parametrization were proposed for the restricted primitive model.     

Electrical properties of some crystalline salts of adenine

In the present paper we report the first experimental results on ac and dc conductivity and permittivity of adenine hemisulphate hydrate and adenine sulphate measured at atmospheric and high hydrostatic pressures. For both materials ac conductivity is of ^s type, where:s 1·1· Room temperature dc conductivity of adenine hemisulphate hydrate equals approximately 5×10^{–15 –1} cm^–1 with an activation energy of 0·86 eV; dc conductivity of adenine sulphate is less than 10^–16 cm^–1. On the basis of these measurements and those carried out at high pressure, it is concluded that conductivity of adenine hemisulphate hydrate is of electronic type.The authors wish to thank Dr. J. Zachová for the preparation of adenine salts single crystals.     

Temperature dependence of anisotropy in monocrystalline lithium ferrite films

A study of crystallographic and uniaxial anisotropy in monocrystalline Li-ferrite films in the temperature range 4.2–550°K is presented. The experimental results K₁(T) agree well with calculations based on the one ion model with crystalline field coefficients of a_A=–2.77 ·10^–2 cm^–1, a_B=3.34 · 10^–2 cm^–1. An experimental function K_u(T) is obtained which does not contradict the assumption that anisotropic stresses are responsible for the development of uniaxial anisotropy in Li-ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 113–116, August, 1973.     

Investigations of the excitation energy transport mechanism in donor-acceptor systems

Measurements of fluorescence quantum yield _D/_oD of Na-fluorescein (donor; D) versus concentration of rhodamine B (acceptor; A) in viscous solutions have been carried out. The donor concentration in these solutions was as follows:C _D=2·10^–2 M (system I), 1.5·10^–2 M (II), 10^–2 M (III), 3·10^–3 M (IV), and 5·10^–5 M (V). The experimental results have been compared with current theories of nonradiative electronic energy transfer (NEET). In the case of very strong migration (systems I, II, and III), a significant influence of correlations (between configurations of D and A molecules in the surroundings of successively excited donors) on quantum yield _D/_oD has been determined. Experimental values have been found to be clearly higher in comparison with those predicted theoretically. The influence of possible factors on the decrease in the effectiveness of excitation energy transport to traps-acceptors in systems of very strong migration has been discussed.Dedicated to Professor A. Kawski on the occasion of his 65th birthday.     

Resistivity changes of evaporated Ti films caused by sorption of O2, CO2 and H2

Resistivity changes of Ti films evaporated in UHV were measured during sorption of O₂, CO₂ and H₂ at very low pressures (p 1·6×10^–6–1·6×10^–5Pa). During the sorption process the pressure was kept constant. For O₂ and CO₂ an increase of the resistivity with a tendency to saturation was observed. For H₂ anomalous curves with a resistivity maximum and a subsequent decrease of the resistivity were obtained. Possible mechanisms of the processes are discussed. For the Ti/O₂ interaction a simple model describing the time dependence of the resistivity changes is proposed.We are indebted to dr. L. Pátý for consultations in vacuum technology and his permanent help in the experimental work and to dr. Z. Knor for a valuable discussion and for kindly extending us many references.     

Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2

It is shown that in the forbidden band of the plasmochemical SiO₂ there are electron capture centers with capture cross section 2·10^–13cm², density 2·10¹⁹ cm^–3, and thermal activation energy 0.41 eV for the process of trap emptying. It is noted that the charge state of the insulator in an external electric field is unstable, this being due to the exchange of electrons between the insulator and the aluminum electrode. An energy band diagram of the structure is deduced from the results of the investigation. The potential barrier heights were found to be 2.78 eV at the Al-SiO₂ interface and 4.36 eV at the SiO₂-Si interface. The dynamical current-voltage characteristic of the structure is used to determine the density of mobile ions in the insulator, which is found to be S·10¹³ cm^–2 at T=230°C and rate of change 5 mV/sec of the voltage.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 61–66, January, 1981.     

Experimental investigation of radiation-gasdynamic processes that develop under the action of high-power λ=10.6 μm laser pulses on a solid in a gas

A cycle of experimental investigations was carried out on radiation-gasdynamic processes that evolve when high-power (1.5 GW) pulses from an electron-beamcontrolled CO2 laser act on a target in air or in inert gases at pressures 0.1–760 torr and flux densities 5·10⁶ to 5·10⁸ W/cm². It is shown that at pressures above several torr a laser-radiation absorption wave is produced in the gas surrounding the target and determines the evolution of the interaction. The laser-stimulated-detonation, subsonic, and supersonic radiative regimes of absorption-wave propagation in gases are investigated under conditions of planar one-dimensional geometry of the experiment and at large (up to 20 cm²) area of the irradiated spot.Translated from Trudy Ordena Lenina Fizicheskogo Instituta im. P. N. Lebedeva, Vol. 142, pp. 117–171, 1983.