Preparation and electrochemical properties of nano Al<Subscript>0.2</Subscript>V<Subscript>2</Subscript>O<Subscript>5.3−<Emphasis Type="BoldItalic">δ</Emphasis></Subscript> cathode materials for rechargeable lithium batteries

Nano-sized Al³⁺-doped V₂O₅ cathode materials, Al_0.2V₂O_5.3−δ , were prepared by an oxalic acid assisted sol–gel method at 350 °C (sample A) and 400 °C (sample B). X-ray diffraction confirmed that samples A and B were pure phase Al_0.2V₂O_5.3−δ with an orthorhombic structure close to that of V₂O₅. Scanning electron microscopy showed that sample A was in nanoscale with a mean particle size about 50 nm. Cyclic voltammetry showed the good electrochemical and structural reversibility of the Al_0.2V₂O_5.3−δ nanoparticles during the Li⁺ insertion/extraction process. The Al_0.2V₂O_5.3−δ nanoparticles exhibited excellent charge–discharge cycling performance and rate capability compared to that of bulky V₂O₅ electrodes. For instance, the materials delivered a reversible specific capacity about 180 mAh g⁻¹ (sample A) and 150 mAh g⁻¹ (sample B), in the potential window of 4.0–2.0 V at the current density of 150 mA g⁻¹. The Al_0.2V₂O_5.3−δ nanoparticles in particular showed almost no capacity fading for at least 50 cycles.     

Comparative analysis of emission and absorption spectra of zinc oxide powders

Photoluminescence and optical absorption spectra induced by proton and electron irradiation in zinc oxide powders have been investigated. It has been found that the emission band in a visible region with a maximum of about 2.3 eV is a superposition of three bands with 2.55, 2.34, 2.12 eV, respectively, caused by oxygen vacancies V _O⁺, interstitial oxygen O _i ⁻, and zinc vacancies V _Zn⁻ absorbing in the 3.03-, 2.83-, and 2.64-eV bands.     

EPR studies of Cu2+ and V4+ ions in phosphate glasses

Two lead-phosphate glass systems doped with both copper and vanadium ions in different ratios were studied by EPR (electron paramagnetic resonance) method. EPR spectra and parameters (g_‖ = 2.44, g_⊥ = 2.08 andA _‖ = 117.6 · 10⁻⁴ cm⁻¹) obtained for x(CuO · V₂O₅)(l−x)[2P₂O₅ · PbO] glasses withx ≤ 10 mol% suggest a tetrahedral (Td) coordination of Cu²⁺ ions and not a tetragonally elongated octahedron as has been assumed in previous works. The ground state of the paramagnetic electron is thed _xy copper orbital with a 4p_z contribution of 6%. For 20 ≤x ≤ 40 mol% a broad line (ΔB = 307 G) characteristic for clustered ions appears atg = 2.18. The V⁴⁺ ions are evidenced only in the spectra of x(CuO · 2V₂O₅)(1 −x)[2P₂O₅ · PbO] glasses and the resonance parameters suggest a pentacoordinated C_4v local symmetry for these ions. The hyperfine structures characteristic for Cu²⁺ and V⁴⁺ ions disappear for 10 ≤x ≤ 40 mol% due to the mixed exchange Cu²⁺−V⁴⁺ pair formation in these glasses.     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.     

Hf-sputtered indium oxide films doped with tin

Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In₂O₃/20 at-%SnO₂ target onto glass substrates. The sputter atmosphere contained mainly argon (10⁻²Torr) with addition of oxygen (0≦p _{O 2}≦2·10⁻²Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm²V⁻¹ s⁻¹) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ⁻¹cm⁻¹.     

High-temperature electrical transport in Al-doped calcium and strontium titanates

The electrical conductivity of perovskite-related oxides CaTi_1−xAl_xO_3−δ and SrTi_1−xAl_xO_3−δ (x=0−0.4) were investigated within the temperature range 900 to 1000 °C and the oxygen partial pressure range between 10⁻²⁰ and 0.21 atm using a dc four-point technique. The materials investigated show predominantly p-type electronic conductivity at high, n-type electronic conductivity at low, and ionic conductivity at intermediate oxygen partial pressures. The values of ionic conductivity in CaTi_1−xAl_xO_3−δ were found to be lower than those in CaTi_1−xFe_xO_3−δ. The effect of aluminium concentration on the high-temperature transport properties was examined. Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15 – 21, 2002.     

Determination of absorption cross sections for oxygen molecules in the Schumann-Runge band region at high temperatures

We have measured the absorption cross sections of oxygen molecules in oxygen and in an oxygen-argon mixture heated by a shock wave, in the wavelength range 190–250 nm at temperatures of 1500–7000 K, for thermal equilibrium conditions behind the shock wave front. Analysis of the absorption cross sections obtained allowed us to select a data set that adequately describes the absorption characteristics of the electronic transition X³Σ _g ⁻ → B³Σ _u ⁻ for the oxygen molecule. In order to approximate the temperature dependence of these cross sections at a temperature of 1500–4500 K, we chose the function σ(λ, T) = σ₀(λ)(1 − exp (−θ/T)) exp (− n*θ/T) where θ₀ = 1.4·10⁻¹⁷, 1.4·10⁻¹⁷, 1.2·10^{− 17}, and 1.3·10⁻¹⁷ cm², n* = 3.1, 4.1, 5.6, and 7.47 for wavelengths 190, 210, 230, and 250 nm, respectively; θ = 2240 K is the characteristic temperature of the O₂ molecules. The approximation error was 19–25% and did not exceed the experimental error. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 13–17, January–February, 2006.     

Interaction of high-power x rays with sapphire crystals and quartz based materials

The interaction of high-power (10¹¹ W/cm²) soft (1–3 keV) x-rays with inorganic oxides (Al₂O₃ and SiO₂) is studied. It is found that when the wavelength of the x rays is comparable to the lattice constant of the crystal, besides generation of a high concentration of hot electrons and holes, there is broadening of the 2 p O²⁻-subband in the upper valence band owing to the local action of the strong x-ray field on regular oxygen sites. As a consequence, depending on the intensity of the x-ray pulses, a broadening of the fast (<1 ns) core-valence x-ray luminescence spectra is observed. Fiz. Tverd. Tela (St. Petersburg) 39, 286–289 (February 1997)     

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge

(TiO₂) _x (Al₂O₃)_1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO₂)_0.8(Al₂O₃)_0.2 film annealed at 500°C is amorphous with sharp interface between (TiO₂)_0.8(Al₂O₃)_0.2 and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 ? for (TiO₂)_0.9(Al₂O₃)_0.1 gate dielectrics is achieved with a gate leakage current of 2.70×10⁻⁵ A/cm² at V _g=+1 V.     

μ− SR studies of oxide-superconductorsSR studies of oxide-superconductors

The negative muon spin rotation method (μ⁻ SR) has been applied to studies of electronic states at oxygen sites of oxide superconductors YBa₂Cu₃O₇, Nd_2−x Ce _x CuO_4−δ (x=0.15, oxygen reduced), LiTi₂O₄ and related oxide-insulators La₂CuO_4−δ, CuO, Cu₂O. The paramagnetic shifts of μ⁻ trapped at oxygen nuclei in these polycrystalline powder samples have been measured at 300 K. All the measured shifts are positive. In copper-oxides the paramagnetic shifts are of the order 10⁻³, while in LiTi₂O₄ is very small (8.4±3.34×10⁻⁵). In YBa₂Cu₃O₇, a fast μ⁻ spin relaxation timeT ₂ ^* (∼ 200 ns) has been observed; the reason for this is unknown and further studies are now in progress.