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1.
Dy^3+掺杂的氟锆酸盐玻璃的光谱性质   总被引:1,自引:0,他引:1  
张军杰  张龙 《发光学报》1999,20(3):224-229
测量了氟锆酸盐玻璃中Dy^3+离子的吸收光谱和荧光光谱。根据Dy^3+离子的吸收光谱,得到氟锆酸盐玻璃中Dy^3+离子的J-O参量Ω,Ω3.29×^20cm^2,Ω4=1.56×10^20cm^2,Ω6=2.48±10^20cm^2,经计算了氟锆酸盐玻璃中y^3+离子的发射特性,计算了Dy^3+离子1.3μm发射的^6F11/2(6H9/2)→6H15/2跃迁的发射截面σ=0.62×10^-20c  相似文献   

2.
本文通过对J/ψ辐射衰变到K+K-πO和终态中iota能区的振幅分析,发现iota峰下有一个0-+共振态(M=1467±3MeV,=89±6MeV)和两个1++共振态(M=1435±3MeV,=59±5MeV;M=1497±2MeV,=44±7MeV),分别对应于η(1440),f1(1420)和f1(1510).  相似文献   

3.
利用北京谱仪在北京正负电子对撞机上采集的350万(2S)事例,通过(2S)→γπ-和γK+K-反应道测量了Xc0的总宽度.由MonteCarlo模拟给出的质量分辨函数,利用拟合Xc2谱形得到的质量分辨作标定后,用于Xc0宽度的拟合,得到Xc0的宽度为(15.0)MeV.同时定出了XcJ(J=0,2)到π+π=和K+K-的衰变分支比.结果为B(Xc0→π+π-)=(4.27±0.23±O.60)×10-3;B(Xc0→K+K-)=(3.44±0.21±0.47×10-3;B(Xc2→π+π-)=(1.52±0.17±0.29)×10-3和B(Xc2→K+K-)=(5.2±1.1±1.8)×10-4,其中第一项误差为统计误差,第二项为系统误差。  相似文献   

4.
各向异性聚合物薄膜参数的测量与计算   总被引:3,自引:0,他引:3  
讨论了用单侧漏模法测量薄膜共振漏模的耦合角、计算漏模的有效折射率并由相应的模方程来确定各向异性聚合物薄膜折射率n0、ne及厚度d的方法。对PT-PEK-c(酞酸铅-聚醚醚酮)膜,测量与计算结果为:no=1.6525±0.0014,ne=1.6439±0.0019,d=2.33±0.32μm。  相似文献   

5.
在LiNbO3晶体中掺入ZnO,生长ZnO∶LiNbO3晶体,当ZnO的掺入浓度高于6mol%时,晶体的抗光损伤能力提高两个数量级,与高掺MgO(>4.6mol%)相似。Zn∶LiNbO3的倍频转换效率可达50%左右,高于Mg∶LiNbO3。本文对Zn∶LiNbO3晶体中Zn2+离子占位以及抗光损伤增强机理进行了初步探讨  相似文献   

6.
Zn:LiNbO3晶体倍频性能的研究   总被引:4,自引:0,他引:4  
李铭华  韩爱珍 《光学学报》1997,17(4):30-433
在LiNbO3晶体中掺入ZnO,生长ZnO:LiNbO3晶体,当ZnO的掺入浓度高于6mol%时,晶体的抗光损伤能力提高两个数量级,与高掺Mgo相似。Zn:LiNbO3的倍频转换效率可达50%左右,高于Mg;LiNbO3。本文对Zn:LiNbO3晶体中Zn^2+离子占痊以及抗光损伤增强机理进行了初步探讨。  相似文献   

7.
用飞秒泵浦-探测方法测量了ZnCdse量子阱/ZnSe/CdSe量子点复合结构样品的透射特性。样品中ZnSe垒层厚度为 15nm,泵浦一探测结果得到上升沿时间为 367±60fs,下降沿时间为1.3±0.2ps。获得ZnCdSe量子阱中激子寿命约为1ps。  相似文献   

8.
本文阐述了在中国原子能科学研究院“天光一号”KrF激光核聚变实验装置上,MOPA系统光学元件加工与镀膜研究工作的进展。实验测量结果表明,加工后的基片表面均方根粗糙度对于K9光学玻璃与熔融石英玻璃来说分别为σrms=1.8±0.5nm,σrms=2.0±0.4nm。镀HfO2/SiO2高反射膜的光学元件的反射率与破坏阈值分别为R>99.5%,Eth=1.30~1.33J/cm2。镀Al2O3/MgF2增透膜的光学元件的透射率与破坏阈值分别为T>99.5%,Eth=1.3~1.97J/cm2。  相似文献   

9.
用低能电子衍射研究了Sb和Bi吸附在InP{110}和GaAs{110}表面上表面结构。结果显示出:对Sb/InP{110},表面原子层间距:d1=0.27±0.23A(膨胀9.4%±0.02A);旋转角ω1为-10.77°±2.29°和ω2为15.26°±0.82°;吸附键长lc1-A=2.84±0.05A,lc2-B=2.75±0.02A,其键角α=101.21°±2.1°,β=107.86°  相似文献   

10.
利用北京谱仪(BES)在4.03GeV正负电子对撞能量下获取的数据,[研究了,τ+τ-产生过程.借助双标记方法分析了τ±→π+π-π±υτ衰变事例.测定分支比Br(τ±→a1±υτ→ρ0π±υτ,ρ0→π+π-=(7.3±0.5)%,Br(τ±→K*±υτ→Ks0π±υτ,Ks0→π+π-)=(0.6±1.5)×10-3.并由Daliz投影分布的分析,确认a1的主要衰变方式ρπ.同时,也观察到a1衰变中以S波贡献为主的现象.采用Kuhn模型拟合实验数据,得到:ma1=1.24±0.02GeV,Γa1T=0.57±0.07GeV.  相似文献   

11.
焦宝臣  张晓丹  魏长春  孙建  倪牮  赵颖 《中国物理 B》2011,20(3):37306-037306
Indium doped zinc oxide(ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate.1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated.The 1 at.% indium doped single-layers have triangle grains.The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10-3Ω·cm and particle grains.The doublelayers structure is designed to fabricate the ZnO:In thin film with low resistivity(2.58×10-3Ω·cm) and good surface morphology.It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substratelayer,and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film.Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region.Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.  相似文献   

12.
By using the radio frequency-magnetron sputtering (RF-MS) method, both pure ZnO and boron doped ZnO (ZnO:B) thin films were deposited on glass substrates at ambient temperature and then annealed at 450 °C for 2 h in air. It is found that both ZnO and ZnO:B thin films have wurtzite structure of ZnO with (0 0 2) preferred orientation and high average optical transmission (≥80%). Compared with the resistivity of 6.3 × 102 Ω cm for ZnO film, both as-deposited and annealed ZnO:B films exhibit much lower resistivity of 9.2 × 10−3 Ω cm and 7.5 × 10−3 Ω cm, respectively, due to increase in the carrier concentration. Furthermore, the optical band gaps of 3.38 eV and 3.42 eV for as-deposited and annealed ZnO:B films are broader than that of 3.35 eV for ZnO film. The first-principles calculations show that in ZnO:B thin films not only the band gap becomes narrower but also the Fermi level shifts up into the conduction band with respect to the pure ZnO film. These are consistent with their lower resistivities and suggest that in the process of annealing some substituted B in the lattice change into interstitial B because of its smaller ion radius and this transformation widens the optical band gap of ZnO:B thin film.  相似文献   

13.
ZnO薄膜的掺杂特性   总被引:8,自引:4,他引:4  
通过MOCVD方法生长的ZnO薄膜一般为富锌生长,呈n型电导,要想得到高阻或低阻p-ZnO薄膜需要对其进行掺杂施主或受主杂质.主要研究在生长过程中通过NH3对ZnO薄膜进行氮掺杂的情况,利用优化生长条件,即生长温度为610℃,Ar气(携带DEZn)流量为4sccm,O2流量为120sccm,N2流量为600sccm,得到在NH3流量为80sccm时生长样品的结晶质量最高,在掺杂薄膜中NH3流量高于或低于80sccm时,样品的表面形貌都将变差,只有在80sccm时表面粗糙度最低晶粒最小,表明该流量下获得的样品表面较光滑致密.所以80sccmNH3流量为在R面蓝宝石上生长<110>取向ZnO薄膜的最佳掺杂流量.Hall测量结果表明,NH3流量为50sccm的样品电导呈弱p型,电阻率为102Ω·cm,空穴载流子浓度为+1.69×1016cm-3,迁移率为3.6cm2·V-1·s-1;当NH3流量增加时样品的电导呈n型,电阻率最高达108Ω·cm,我们认为与进入ZnO薄膜的H的量有关,并对其变化机理进行了详细的分析.  相似文献   

14.
采用离子束增强沉积方法在Si和SiO2/Si衬底上制备In-N共掺杂ZnO薄膜(INZO),溅射靶是用ZnO和2 atm% In2O3粉体均匀混合并压制而成,在氩离子溅射ZnO靶的同时,氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向,并且为p型导电,电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火,对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词: 氧化锌薄膜 p型掺杂 离子束增强沉积  相似文献   

15.
Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties   总被引:1,自引:0,他引:1  
ZnO/Cu/ZnO multilayers on glass with different copper layer thickness were prepared by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Cu. Different optimization procedure were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four point probes were used to explore the causes of the changes in electrical and optical properties. The sheet resistance of the structure was severely influenced by the deposition condition of both top ZnO and intermediate Cu layer. Effect of substrate temperature and annealing treatment on ZnO and Cu layer was analyzed. A sheet resistance of 10 Ω/sq and transmittance over 85% at 580 nm wavelength was achieved and could be reproduced by controlling the preparation process parameter. The results of an optimization condition of both oxide layers and metallic Cu layers are illustrated.  相似文献   

16.
ZnO:Fe薄膜制备、光学与电学性质研究   总被引:2,自引:2,他引:0  
用双靶磁控溅射设备制备了ZnO:Fe薄膜。分析了铁靶溅射功率对薄膜的光学及电学性质的影响。X射线衍射(XRD)和原子力显微镜(AFM)图像表明:ZnO:Fe薄膜为六角纤锌矿结构,且具有非常好的沿垂直于衬底的c轴择优取向。当铁靶功率小于250W时,沉积速率随铁靶功率的增加而增加。随着铁靶功率的增加,透射光谱的吸收边有微弱蓝移,透过率在可见光区超过75%。掺铁后薄膜的电阻率只有10-2Ω.cm,远小于纯氧化锌的电阻率。通过实验得到ZnO:Fe薄膜的最佳制备条件。  相似文献   

17.
The reduced graphene oxide (rGO) incorporated ZnO thin films were fabricated by dip-coating method. The Raman and FT-IR spectra of 0.075 wt% incorporated composite film showed reduction of GO in composite film. The transmittanceProd. Type: FTP spectra have shown that rGO incorporation increase the visible light absorption of ZnO thin film while the calculated band gaps of samples were decreased from 3.28 to 3.25 eV by increasing the rGO content. The linear trend of IV curve suggests an ohmic contact between ZnO and rGO. Besides, it was found that by increasing the rGO content, the electrical resistivity was decreased from 4.32×102 Ω cm for pure ZnO film to 2.4×101 Ω cm for 0.225 wt% rGO incorporated composite film. The composite photodetectors not only possessed a desirable UV photosensitivity, but also the response time of optimum sample containing 0.075 wt% rGO was reduced to about one-half of pure ZnO thin film. Also, the calculated signal to noise (SNR) showed that highly conductive rGO in composite thin films facilitate the carrier transportation by removing the trapping centers. The mechanism of photoresponsivity improvement of composite thin films was proposed by carrier transportation process.  相似文献   

18.
《Current Applied Physics》2015,15(7):829-832
Inverted organic solar cells (OSCs) based on poly (3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ) were fabricated with optimized ZnO/Ag/ZnO multilayer and conventional indium–tin oxide (ITO) cathode electrodes and their performance was compared. The ZnO/Ag/ZnO multilayer films showed sheet resistances in the range 3.6–3.9 Ω/sq, while ITO exhibited 14.2 Ω/sq. On the one hand, the carrier concentration gradually decreased from 1.74 × 1022 to 4.33 × 1021 cm−3 as the ZnO thickness increased from 8 to 80 nm, respectively. The transmittance of the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) films was ∼95% at 550 nm, which is comparable to that of ITO (∼96%). The multilayer films were smooth with a root mean square (RMS) roughness of 0.81 nm. OSCs fabricated with the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) film showed a power conversion efficiency (2.63%) comparable to that of OSCs with a conventional ITO cathode (2.71%).  相似文献   

19.
衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响   总被引:2,自引:0,他引:2       下载免费PDF全文
研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明,衬底温度对ZnO薄膜的微观结构有显著影响,明显的形貌转变温度大约发生在175℃,低于175℃,薄膜呈镜面结构,晶粒为球状,高于177℃的较高温度范围,薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织;随着温度增加,薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm2/V·s的高迁移率和3.28×10-2 Ω·cm的低电阻率,对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极. 关键词: MOCVD ZnO薄膜 透明导电氧化物 太阳电池  相似文献   

20.
Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation of boron doping concentration in reducing solution on film properties was investigated. Low angle X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The films with resistivity 2.54×10−3 Ω-cm and optical transmittance >90% were obtained at optimized boron doping concentration. The optical band gap of ZnO:B films was found ∼3.27 eV from the optical transmittance spectra for the as-deposited films. Due to their excellent optical and electrical properties, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.  相似文献   

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