Nature of tunneling electron spin resonance of an isolated surface spin

A phenomenological model has been proposed for tunneling electron spin resonance (ESR) of an isolated surface spin situated in a scanning tunneling microscope (STM), which explains the dependence of features (local maxima) of the tunneling current on the radio-frequency (RF) electric field and on the position of the tip with respect to the spin. A crossover of the line shape of the resonance signals, whose nature in weak and strong pumping fields corresponds to Lorentzian and Fano resonances, respectively, has been interpreted. New ESR–STM effects that are linear and nonlinear in the RF field and are promising for developing the methods of controlling spin qubits have been predicted.     

Anomalous Hall effect in magnetic sandwiches with a dielectric spacer

Quantum-statistical calculations are presented for the anomalous Hall effect in a magnetic sandwich with a tunnel junction across a thin dielectric spacer. The tunneling current flows across the junction perpendicular to the plane of the layers while the Hall component of the current lies in this plane. The Kubo formalism and the Green’s functions are used to calculate the contribution of skew scattering to the Hall conductivity. The classical size effect in the Hall conductivity of this structure is studied and two new effects are observed. One is associated with the dependence of the effective electric field in the magnet on the transparency of the dielectric potential barrier for electrons when the current flows perpendicular to the layers of the structure and may be called “ geometric”. The other occurs as a result of the influence of the strong electric field in the dielectric on the electron motion in the adjacent magnetic layers.     

Theory of resonant tunneling through the insulator conduction band of a thin film metal-insulator-metal (MIM) heterojunction

An “atomic” model of an insulating barrier between two free-electron model metals is used to investigate resonant tunneling across the insulator in the presence of a medium to large, externally applied electric field (bias). The exact numerically calculated tunneling current exhibits a pronounced oscillatory bias dependence superposed on the dominant roughly exponential tunneling characteristic. The interpretation of these results in terms of an internal field emission or Fowler-Nordheim type tunneling subject to “periodic deviations” (or interferences) seems plausible and was suggested by Maserjian. To test this conjecture, a trapezoidal barrier model of our “atomic” model analyzed numerically. As expected, the trapezoidal barrier model could only qualitatively reproduce the oscillatory bias dependence of the barrier transmissivity and of the current. Furthermore this limited agreement depends on allowing the effective mass in the barrier to become a strictly adjustable parameter. This failure of the conventional model of the junction can be interpreted as follows: (i) For moderate external (bias) fields the trapezoidal barrier fails to account for the correct position dependence of the Blochwave vector in the insulator's conduction band, hence the correct interference conditions cannot be reproduced. (ii) For large external fields the band model itself begins to fail. An explanation of oscillatory bias dependence at the tunneling current in terms of splitting of the insulator's conduction band into a set of discrete Stark levels is suggested. It is demonstrated that a fit of the oscillatory tunneling characteristics in the “Fowler-Nordheim regime” is not a reliable technique to determine the effective mass in the thin insulating film of tunneling junctions over the energy interval containing the forbidden gap and the adjoining conduction-band.     

Photon-assisted transport through a quantum dot coupled to superconductors

Photon-assisted electron transport for resonant tunneling has been investigated by using a current formula developed based on the nonequilibrium Green’s function technique. We have studied the external frequency dependence as well as the energy level position dependence for the resonant ac tunneling through the quantum dot coupled to two superconducting reservoirs.     

Non-ohmic behaviour of iodine-doped polyacetylene

We report on the temperature and electric field strength dependence of the conductivity of iodine-doped polyacetylene in the metallic regime. The experimental results are discussed in terms of Sheng model of fluctuation induced tunneling and characteristic dimensions of the tunneling zones between fibres are deduced from a fit between this theory and our experiments.     

The effects of two-dimensional bifurcations and quantum beats in a system of combined atomic force and scanning tunneling microscopes with quantum dots

The field and temperature dependence of the probability of two-dimensional dissipative tunneling is studied in the framework of one-instanton approximation for a model double-well oscillator potential in an external electric field at finite temperature with account for the influence of two local phonon modes for quantum dots in a system of a combined atomic force and a scanning tunneling microscope. It is demonstrated that in the mode of synchronous parallel transfer of tunneling particles from the cantilever tip to the quantum dot the two local phonon modes result in the occurrence of two stable peaks in the curve of the 2D dissipative tunneling probability as a function of the field. Qualitative comparison of the theoretical curve in the limit of weak dissociation and the experimental current–voltage characteristic for quantum dots that grow from colloidal gold under a cantilever tip at the initial stage of quantum-dot formation when the quantum dot size does not exceed 10 nm is performed. It is established that one of the two stable peaks that correspond to interaction of tunneling particles with two local phonon modes in the temperature dependence of the 2D dissipative tunneling probability can be split in two, which corresponds to the tunneling channel interference mechanism. It is found that the theoretically predicted and experimentally observed mode of quantum beats occurs near the bifurcation point.     

An electret model based on the two-level system theory

On the basis of the concept of a two-line density matrix and considering the tunneling effect a set of simultaneous differential equations is derived relating all its components. An equation is obtained describing the polarization vector relaxation in an electret. The relaxation parameter corresponding to the polarization vector total relaxation time is calculated microscopically. A system of differential equations allowing for the effect on the atoms of a strongly oscillating classical electric field is proposed. An analytical formula for thermal current in an electret is obtained and the behavior of two-level systems in a high-frequency electric field is analyzed.     

Investigating the effects of the interface defects on the gate leakage current in MOSFETs

The effects of the interface defects on the gate leakage current have been numerically modeled. The results demonstrate that the shallow and deep traps have different effects on the dependence relation of the stress-induced leakage current on the oxide electric field in the regime of direct tunneling, whereas both traps keep the same dependence relation in the regime of Fowler-Nordheim tunneling. The results also shows that the stress-induced leakage current will be the largest at a moderate oxide voltage for the electron interface traps but it increases with the decreasing oxide voltage for the hole interface traps. The results illustrate that the stress-induced leakage current strongly depends on the location of the electron interface traps but it weakly depends on the location of the hole interface traps. The increase in the gate leakage current caused by the electron interface traps can predict the increase, then decrease in the stress-induced leakage current, with decreasing oxide thickness, which is observed experimentally. And the electron interface trap level will have a large effect on the peak height and position.     

Wannier-Stark states in finite superlattices

Individual Wannier-Stark states are resolved in a current experiment over a wide electric-field range for a 5 and 4 period finite superlattice utilizing a hot-electron transistor. The observed field dependence of the tunneling transmission through the various states directly resembles the progressive localization of the wave functions. The basic transport through Wannier-Stark states in short-period superlattices is identified to be coherent. By tuning the Wannier-Stark state splitting with electric field into the optical phonon energy, the opening of new LO-phonon mediated transport paths is observed.     

A microscopic model of sequential resonant tunneling transport through weakly coupled superlattices

A microscopic model is developed for resonant tunneling transport in weakly coupled semiconductor superlattices in a constant external electric field. The model takes into account multiple subbands and electric-field dependence of scattering by acoustic and optical phonons, charged impurities, and interface roughness. The model is used as a basis for computing the resonant-tunneling profiles for structures with small size-quantization energies. The computed results are in good agreement with experiment. In structures of this type, an important role is played by electric-field dependence of scattering processes and the threshold behavior of elastic processes is strongly manifested. A substantial asymmetry is predicted not only for the first tunneling resonance, but also for higher order resonant tunneling processes.     

Deep impurity-center ionization by far-infrared radiation

An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared and submillimeter-wavelength radiation, with photon energies tens of times lower than the impurity ionization energy. Within a broad range of intensities and wavelengths, terahertz electric fields of the exciting radiation act as a dc field. Under these conditions, deep-center ionization can be described as multiphonon-assisted tunneling, in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field. The field dependence of the ionization probability permits one to determine the defect tunneling times and the character of the defect adiabatic potentials. The ionization probability deviates from the field dependence e(E) ∝ exp(E ²/E _c ² ) (where E is the wave field, and E _c is a characteristic field) corresponding to multiphonon-assisted tunneling ionization in relatively low fields, where the defects are ionized through the Poole-Frenkel effect, and in very strong fields, where the ionization is produced by direct tunneling without thermal activation. The effects resulting from the high radiation frequency are considered and it is shown that, at low temperatures, they become dominant. Fiz. Tverd. Tela (St. Petersburg) 39, 1905–1932 (November 1997)     

Drastic reduction of shot noise in semiconductor superlattices

We have found experimentally that the shot noise of the tunneling current I through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value 2eI, and that the noise approaches 1/3 of that value in superlattices whose quantum wells are strongly coupled. On the other hand, when the coupling is weak or when a strong electric field is applied to the superlattice, the noise becomes Poissonian. Although our results are qualitatively consistent with existing theories for one-dimensional multibarrier structures, the theories cannot account for the dependence of the noise on superlattice parameters that we have observed.     

Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.     

Holographic Schwinger effect

We study tunneling pair creation of W bosons by an external electric field on the Coulomb branch of N=4 supersymmetric Yang-Mills theory. We use AdS/CFT holography to find a generalization of Schwinger's formula for the pair production rate to the strong coupling, planar limit which includes the exchange of virtual massless particles to all orders. We find that the pair creation formula has an upper critical electric field beyond which the process is no longer exponentially suppressed. The value of the critical field is identical to that which occurs in the Born-Infeld action of probe D3-branes in the AdS(5)×S(5) background, where AdS(5) and S(5) are 5-dimensional anti-de Sitter space and the 5-sphere, respectively.     

压缩应变载荷下氮化镓隧道结微观压电特性及其巨压电电阻效应

电子器件可控性研究在日益追求器件智能化和可控化的当今社会至关重要. 基于第一性原理和量子输运计算, 本文研究了压缩应变载荷对氮化镓(GaN)隧道结基态电学性质和电流输运的影响, 在原子尺度上窥视了氮化镓隧道结的微观压电性, 验证了其内在的巨压电电阻(GPR)效应. 计算结果表明, 压缩应变载荷可以调节隧道结内氮化镓势垒层的电势能降、内建电场、电荷密度和极化强度, 进而实现对隧道结电流输运和隧穿电阻的调控. 在-1.0 V的偏置电压下, -5%的压缩应变载荷将使氮化镓隧道结的隧穿电阻增至4倍. 本研究展现了氮化镓隧道结在可控电子器件中的应用潜力, 也展现了应变工程在调控电子器件性能方面的光明前景.     

In-plane electric current is induced by tunneling of spin-polarized carriers

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons and symmetry properties of the barrier; in particular, the current reverses its direction if the spin orientation changes the sign. Microscopic origin of such a "tunneling spin-galvanic" effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wave vector of electrons.     

超导-量子点耦合系统的相干输运

研究超导-量子点耦合系统的量子相干输运,主要考虑系统在微波场及Zeeman场作用下的输运电流特性.应用BCS平均场理论及非平衡格林函数技术,对超导体各极作Bogoliubov变换使其对角化,从而推导出用格林函数表示的电流公式.对几种特殊情况进行数值分析,计算出电流-电压、电流-磁场及直流Josephson电流的共振隧穿曲线.     

Radiation of a tunneling electron on a secondary recombination center

Radiation emitted upon photorecombination of electrons produced in tunneling ionization on a nearly located center is considered. An analytic solution to one-dimensional and three-dimensional problems is obtained in the active-electron model. The dependence of radiation on the distance between the ionization and recombination centers and on the electric field direction is studied. Optimal parameters for producing recombination radiation are determined.     

Bistability in a H-terminated Si(1 0 0)2 × 1 surface obtained by ab initio transport calculations

We have analyzed electron tunneling due to the electric field from a hydrogen-terminated Si(1 0 0)2 × 1 ultrathin film on a metal substrate by density functional transport calculations. We have obtained a hysteresis loop in the tunneling current, which comes from the existence of two electronic structures. Furthermore, we have clarified that, as a condition of bistable electron transport, a double-barrier potential structure is not necessarily required for zero field, because it can be induced by the electric field.     

Direct current hopping conductance in one-dimensional diagonal disordered systems

Based on a tight-binding disordered model describing a single electron band, we establish a direct current (dc) electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm's law conductivity.