α-Al2O3(0001)基片表面结构与能量研究

对α-Al2O3(0001)晶体表层三种不同终止原子结构的计算模型,在三维周期边界条件下的κ空间中,采用超软赝势平面波函数描述多电子体系.应用基于密度泛函理论的局域密度近似,计算了不同表层结构的体系能量,表明最表层终止原子为单层Al的表面结构最稳定.对由10个原子组成的菱形原胞进行了结构优化,得到晶胞参数值(a0＝0.48178nm)与实验报道值误差小于1.3%.进一步计算了超晶胞(2×2)表面弛豫,弛豫后原第2层O原子层成为最表层; 对不同表层O,Al原子最外层电子进行了布居分析,表面电子有更大的概率被定域在O原子的周围,表面明显地表现出O原子的电子表面态.     

温度对ZnO/Al2O3(0001)界面的吸附、扩散及生长初期模式的影响

构建了一个ZnO沉积在α-Al₂O₃(0001)表面生长初期的模型，采用基于密度泛函理论的平面波超软赝势法进行了动力学模拟.发现在400，600和800℃的条件下界面原子有不同的扩散能力，因此温度对ZnO/α-Al₂O₃(0001)表面界面结构以及ZnO薄膜生长初期模式有决定性的影响.在整个ZnO吸附生长过程中，O原子的扩散系数大于Zn原子的扩散系数，O原子的层间扩散对薄膜的均匀生长起着重要作用.进一步从理论计算上证实了ZnO在蓝宝石(0001)上两种生长模式的存在，400℃左右生长模式主要是Zn螺旋扭曲生长，具有Zn六角平面对称特征，且有利于Zn原子位于最外表面.600℃左右呈现为比较规则的层状生长，且有利于O原子位于最外表面.模拟观察到在ZnO薄膜临近Al₂O₃基片表面处，Zn的空位缺陷明显多于O的空位缺陷. 关键词： 扩散 薄膜生长 2O₃(0001)')" href="#">α-Al₂O₃(0001) ZnO     

a-Al2O3（0001）表面弛豫及其对表面电子态的影响

在周期边界条件下的，k空间中，采用基于密度泛函理论的局域密度近似平面波超软赝势法，对最外表面终止层为单层Al的a-Al2O3超晶胞(2×2)(0001)表面结构进行了弛豫与电子结构计算研究．结果表明，最外表面Al-O层有较大的弛豫，明显地影响了表面原子与电子结构，布居分析表明表面电子有更大的几率被定域在O原子的周围，表现出O的表面态．进一步分析了表面弛豫前后表面电子密度、态密度变化，表面能级分裂主要来自于O的2p轨道电子态变化．通过对比弛豫前后的表面电子局域函数(ELF)图，分析了表面成键特性．     

α-Al2O3(0001)表面弛豫及其对表面电子态的影响

在周期边界条件下的κ空间中 ,采用基于密度泛函理论的局域密度近似平面波超软赝势法 ,对最外表面终止层为单层Al的α Al2 O3 超晶胞 (2× 2 ) (0 0 0 1)表面结构进行了弛豫与电子结构计算研究 .结果表明 ,最外表面Al-O层有较大的弛豫 ,明显地影响了表面原子与电子结构 ,布居分析表明表面电子有更大的几率被定域在O原子的周围 ,表现出O的表面态 .进一步分析了表面弛豫前后表面电子密度、态密度变化 ,表面能级分裂主要来自于O的 2 p轨道电子态变化 .通过对比弛豫前后的表面电子局域函数 (ELF)图 ,分析了表面成键特性 .     

锐钛矿型TiO2(101)面原子几何及弛豫结构的第一性原理计算

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面的表面能和表面原子弛豫结构.首先对TiO₂(101)面的6种不同的表面原子终止结构的体系总能量进行了计算,结果表明终止原子为两配位的O原子、次层为五配位的Ti原子的表面结构最为稳定.针对该表面研究了表面能和原子弛豫与模型中原子层数和真空厚度的关系,当原子层数为12层,真空厚度为0.4nm时,表面能收敛度小于0.01J/m².研究发现:表面上两配位的O原子向里移动约0.0012nm,五配 关键词： 第一性原理 2')" href="#">TiO₂ 表面结构 弛豫     

第一性原理研究BaTiO3(001)表面的电子结构

在密度泛函理论的基础上,采用平面波赝势方法计算了立方相BaTiO₃(001)表面的电子结构.结构优化表明最表层原子都向体内弛豫,且金属原子弛豫幅度最大,同时各层层间距变化呈交错分布.对两种表面结构的总能计算发现TiO₂表面稳定性比BaO表面弱,一方面是由于TiO₂表面结构中存在O-2p表面态,使价带和导带中电子态向高能区域偏移.另一方面,TO₂表面附近Ti—O共价键存在强弱差异,有利于发生表面吸附.而在BaO表面结构中,最表层BaO的存在消除了这种差异,因而其表面稳定性较强. 关键词： 第一性原理 钛酸钡 电子结构 表面能     

Cl-在α-Al2O3表面吸附的驰豫方式和溶剂化模型选择

采用基于密度泛函理论的第一性原理方法,研究了模型弛豫方式和隐式溶剂化模型的使用对α-Al₂O₃(0001)表面初始结构和Cl~-在表面吸附行为的影响.结果表明,在VASPsol方法模拟的水溶液环境下,全弛豫的α-Al₂O₃(0001)模型最上侧两个原子层的层间距变化量分别为-66.0%和+7.7%,更接近于实验值的-51%、+16%. Cl~-在液相表面上有着更低的吸附能,更容易与表面发生相互作用.相对于全弛豫的方法,固定底层6层原子的方式对α-Al₂O₃(0001)的表面结构、Cl~-在表面的吸附能、吸附距离以及表面原子bader电荷的变化量均造成了一定的影响.此工作将为α-Al₂O₃(0001)表面的点蚀研究提供可参照的前期结果和部分参数设置依据.     

金红石型TiO2(110)表面性质及STM形貌模拟

采用密度泛函理论从头计算了金红石型TiO₂(110)表面的相关性质,切片模型含有9层原子,采用化学整比表面结构,晶胞真空层厚度为1.5nm,原子价电子采用超软赝势表达.差分电子密度分布图发现原子附近区域电子密度分布以球对称为主,电子定域形成离子键的趋势较强,但在Ti和O原子之间存在较弱的共价键.模拟了金红石型TiO₂(110)表面结构的扫描隧道显微镜(scanning tunneling microscope,简称STM)图像,利用Tersoff-Hamann的成像理论,在+2V的正向偏压下,采用一系列变化的数值作为STM探针离表面桥式氧的距离,分析了相关态密度的变化,发现(110)表面的STM形貌凸起部分来自于5—Ti原子,而不是2—O原子(桥式氧),在TiO₂(110)表面结构成像中,电子效应起主导作用,证实了STM实验观察到的亮行是Ti原子的结果. 关键词： 功能材料 密态泛函理论 表面结构 STM像     

Si掺杂β-Ga2O3的第一性原理计算与实验研究

采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势(USPP)法, 在广义梯度近似(GGA)下计算了本征β-Ga₂O₃和Si掺杂β-Ga₂O₃的能带结构、电子态密度、差分电荷密度和光学特性. 在蓝宝石衬底(0001)晶面上用脉冲激光沉积(PLD)法制备了本征β-Ga₂O₃和Si掺杂β-Ga₂O₃薄膜, 测量了其吸收光谱和反射光 关键词： 第一性原理 超软赝势 密度泛函理论 2O₃')" href="#">Si掺杂β-Ga₂O₃     

TiO2分子在GaN(0001)表面吸附的理论研究

采用基于密度泛函理论的平面波超软赝势法,计算了TiO₂分子在GaN(0001)表面的吸附成键过程、吸附能量和吸附位置. 计算结果表明不同初始位置的TiO₂分子吸附后,Ti在fcc或hcp位置,两个O原子分别与表面两个Ga原子成键,Ga-O化学键表现出共价键特征,化学结合能达到7.932-7.943eV,O-O连线与GaN[1120]方向平行,与实验观测(100)[001] TiO₂//(0001)[1120]GaN一致. 通过动力学过程计算分析,TiO₂分子吸附过程经历了物理吸附、化学吸附与稳定态形成的过程,稳定吸附结构和优化结果一致. 关键词： GaN(0001)表面 2分子')" href="#">TiO₂分子 密度泛函理论 吸附     

Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr2O3(0 0 0 1) thin film

The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/α-Cr₂O₃ thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An α-Cr₂O₃(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the α-Cr₂O₃(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated α-Cr₂O₃(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr₂O₃. The valence state of the Cr₂O₃(0 0 0 1) layer is similar to that of bulk Cr₂O₃. The ultrathin Co film directly grown on the α-Cr₂O₃(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Néel temperature of Cr₂O₃ for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr³⁺ in Cr₂O₃(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism.     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

First-principles calculations on Al/AlB2 interfaces

The AlB₂ (1 1 1) surfaces and Al (1 1 1)/AlB₂ (0 0 0 1) interface were studied by first-principles calculations to clarify the heterogeneous nucleation potential of α-Al grains on AlB₂ particles in purity aluminium and hypoeutectic Al-Si alloys. It is demonstrated that the AlB₂ (0 0 0 1) surface models with more than nine atomic layers exhibit bulk-like interior, wherein the interlayer relaxations localized within the top three layers are well converged. The outmost layer of AlB₂ free surface having a preference of metal atom termination is evidenced by surface energy calculations. With Al atoms continuing the natural stacking sequence of bulk AlB₂, Al-Al metallic bonds are formed across interface during the combination of Al atoms with Al-terminated AlB₂ surface. The calculated interfacial energy of the Al/AlB₂ interface is much larger than that between the α-Al and aluminium melts, elucidating the poor nucleation potency of α-Al grains on AlB₂ particles from thermodynamic considerations.     

The resistance to wear and corrosion of laser-cladding Al2O3 ceramic coating on Mg alloy

The paper presents a study on the preparation of Al₂O₃ ceramic coating on AZ91HP Mg alloy by laser remelting plasma-sprayed coating. It was found that after laser remelting, the coating exhibited obvious layer-like characteristics due to influence of temperature distribution, thermophysical parameters and layer thickness. According to the microstructural difference, the coating can be divided into the melted zone with the α-Al₂O₃ column-like crystal, the sintered zone with flock-like structure, the residual plasma-sprayed zone with loosened structure. Because of the dense column-like crystal, the hardness, wear and corrosion resistance of the laser remelted coating are much higher than those of the plasma-sprayed coating and as-received Mg alloy.     

The effect of P2O5 on the ultra broadband near-infrared luminescence from bismuth-doped SiO2-Al2O3-CaO glass

The effect of P₂O₅ on infrared luminescence properties of bismuth-doped SiO₂-Al₂O₃-CaO (SAC) glass was investigated. Under excitation of 690 and 808 nm LD, two infrared emissions from bismuth ions central at 1100 and 1300 nm were observed, respectively. The addition of P₂O₅ was not only found to lead to the increase of full width at half maximum (FWHM) of two infrared emissions, but also result in intensity variety of the infrared emissions. The intensity of the infrared emission located at 1300 nm is reduced by a factor of 2, while the luminescence at 1110 nm is increased by a factor of 5. We propose that the infrared emissions at 1100 and 1300 nm may originate from different valence Bi ion in glasses. Compared with emission at 1300 nm, the infrared emissions at 1100 nm is more possibly from the transition of lower valent Bi ion.     

Structural and phase transition of α-Al2O3 powders obtained by co-precipitation method

Aluminium oxide has been synthesized by co-precipitation technique at different annealing temperature. Powder XRD confirms the formation of α-Al₂O₃ with rhombohedral crystal structure having lattice constant a = 4.76 Å and b = 12.99 Å by the Scherer formula, the average crystallite size is estimated to be 66 nm. The scanning electron microscope results expose the fact that the α-Al₂O₃ nanomaterials are seemingly porous in nature and highly agglomerated. Chemical composition of aluminium oxide is confirmed by energy dispersive spectroscopy. The molecular functional group is confirmed by FTIR. Optical absorption of α-Al₂O₃ has been studied in the UV–vis region and its direct band gap is estimated to be 5.97 eV. This study involves the structural and phase transition of Al₂O₃ and also indicates that α-Al₂O₃ has considerable properties, deserving further investigation for the energetic materials with excellent properties for the possibility of using thin-layer α-Al₂O₃ as a thermo luminescence material.     

掺入Ni2+和V3+对α-Al2O3晶体光谱精细结构、晶体局域结构和零场分裂参量的影响

应用晶体场理论和不可约张量算符方法构造了3d2/3d8态离子在C3v对称晶场中包含自旋-轨道相互作用、自旋-自旋相互作用、自旋-其它轨道相互作用和其它轨道-其它轨道相互作用四种微观磁效应的45阶可完全对角化的能量哈密顿矩阵.利用该矩阵,计算了V³⁺∶α-Al₂O₃和Ni²⁺∶α-Al₂O₃晶体的光谱精细结构、晶体局域结构和零场分裂参量,研究了掺入两种互补态离子Ni²⁺和V³⁺对同种晶体的光谱精细结构、晶体局域结构和零场分裂参量的影响,理论计算值和实验值相符.研究发现：掺杂没有改变晶体的光谱精细结构和能级分裂条数,但改变了能级间距|掺杂也没有改变晶体的对称性,但使晶体局域结构发生了一定程度的畸变| Ni²⁺∶α-Al₂O₃晶体局域结构的伸长畸变量大于V³⁺∶α-Al₂O₃晶体,键角的变化量小于V³⁺∶α-Al₂O₃晶体.     

Thermoluminescence of α-Al 2O 3 by neutron irradiation at low temperature

Thermoluminescence (TL) mechanisms of neutron-irradiated α-Al₂O₃ at 20 K is reported. The TL glow curves of neutron-irradiated and γ-ray-irradiated α-Al₂O₃ were observed. The TL emission bands near 340, 430, 530 and 694 nm were observed in the neutron-irradiated α-Al₂O₃. The γ-ray-irradiated α-Al₂O₃ only showed the TL emission line nearly at 694 nm, corresponding to the R lines of α-Al₂O₃:Cr³⁺. Therefore, the first three emission bands are related to the atomic displacement defects as F-type centers caused by neutron irradiation.