Low-temperature resistance of DNA-templated nanowires

We present low-temperature measurements of the electrical conductivity of metallic nanowires assembled on single DNA molecules by chemical deposition of a thin continuous palladium film. The investigated nanowires exhibit ohmic transport behaviour at room temperature. At low temperature we observe an increase of resistance with decreasing temperature that follows a logarithmic dependence. This behaviour can be described with quantum effects in a disordered metallic film. Received: 4 October 2001 / Accepted: 12 December 2001 / Published online: 20 March 2002     

Gold nanostructures on chemically reinforced PDMS microwell arrays

This paper describes a facile strategy for fabricating arrays of two- and three-dimensional gold nanostructures using PDMS-infiltrated polystyrene (PS) colloidal crystals. PDMS molding of colloidal crystal, gold vapor deposition, and subsequent calcination of PS produced gold thin layers over hexagonal PDMS microwell arrays with hemispherical air-voids of approximately 140 nm on glass substrates. Vapor deposition of perfluoroalkylsilane thin layers improved the thermal stability of the colloidal template over 100 °C, providing a route to preparation of hollow architectures with gold thin layers supported by PDMS nanostructures. Surface modification of the PDMS using poly(allylamine hydrochloride) induced two-dimensional colloidal crystals of PS and PMMA spheres through electrostatic interactions. Particle aggregation of 13 nm gold nanoparticles in the PDMS microwells demonstrated a surface plasmon resonance band red-shifted to 810 nm, in comparison with that on the flat surface at 720 nm.     

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition （CVD） method on natural cleavage plane （110） of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite （w-InN）, zincblende structure （z-InN） is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich Schwoebel barrier.     

On the bending strength of ZnO nanowires

Compared to bulk samples, the bending strength of ZnO nanowires exhibits nearly two orders of magnitude increase and approaches their theoretical value. Statistical analysis on the scatter strength data of ZnO nanowires by using three versatile distributions has shown that, in contrast to Young's modulus, no obvious size effect was observed, and the bending strengths were insensitive to aspect ratios and flaws at the nanoscale. The reasons for this surprising tolerance behavior can be explained by the collective interaction of “flaws” in a nontraditional sense.     

Growth mechanism of scales of SiC nanowires with/without ZnS powders at varying temperatures

The growth mechanism of scales of crystalline SiC nanowires (SiC-NWs) obtained by directly evaporating solid carbon on silicon wafer with/without ZnS powders at varying temperatures is being discussed. More aligned SiC-NWs of small size and good crystalline structure were formed when ZnS was used. Random SiC-NWs of big size and poor crystalline structure were obtained at conditions free of ZnS. Furthermore, the improved crystalline structure and increased diameter of SiC-NWs were observed when the higher temperature was employed.     

Aligned growth of ZnO nanowires by NAPLD and their optical characterizations

Not only vertically aligned ZnO nanowires but also horizontally aligned ZnO nanowires have been successfully grown on the annealed (0 0 0 1) c-cut and (1 1 2 0) a-cut sapphire substrates, respectively using catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD). The as-synthesized ZnO nanowires exhibit an ultraviolet emission at around 390 nm and the absent green emission under room temperature. The single ZnO nanowire was collected in the electrode gap by dielectrophoresis (DEP). Under the optical pumping, the single ZnO nanowire exhibited UV emission at around 390 nm with several sharp peaks whose energy spacings are almost constant, which greatly differs from the broad UV emission of the film with many nanowires, suggesting ZnO nanowires as candidates for laser media. The single ZnO nanowire showed polarized photoluminescence (PL). The as-synthesized ZnO nanowires could find many interesting applications in short-wavelength light-emitting diode (LED), laser diode and gas sensor.     

The effect of back electrode on the formation of electrodeposited CoNiFe magnetic nanotubes and nanowires

The electrodeposition of cobalt + nickel + iron alloy nanostructures in aqueous sulfate solution has been studied using vitreous templates placed on highly ordered porous anodic alumina oxide (AAO). During the deposition process some electrochemical bath parameters such as ion content, deposition voltage, pH and temperature of solution were kept constant. The morphological properties of the nanostructures were studied by scanning electron microscopy (SEM) and the chemical composition was determined by examination of the energy dispersive X-ray (EDX) spectra. The magnetic behaviour of the arrays was determined with a vibrating sample magnetometer (VSM). Voltammetric and galvanostatic results indicate that the back electrodes placed on AAO plays the main role in obtaining nanowire or nanotube structured material.     

Electroless synthesis of large scale Co-Zn-P nanowire arrays and the magnetic behaviour

Co-Zn-P nanowire arrays have been synthesized by electroless deposition in an anodic alumina membrane (AAM). The images of Co-Zn-P nanowire arrays and single nanowires are obtained by both scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. Selected area electron diffraction (SAED), X-ray diffraction (XRD) and energy dispersive spectra (EDS) are employed to study the morphology and chemical composition of the nanowires. The results indicate that Co-Zn-P nanowire arrays are amorphous in structure. The hysteresis loops characterized by a vibrating sample magnetometer (VSM) show that the easily magnetized direction of Co-Zn-P nanowire arrays is parallel to the nanowire arrays and that there exhibits clearly a magnetic anisotropy as a result of the shape anisotropy.     

The effects of strain on STM lithography on HS-ssDNA/Au (1 1 1) surface

Scanning tunneling microscopy (STM) lithography was utilized to investigate a 12-mer HS-ssDNA self-assembled Au (1 1 1) surface. Under low sample bias and high tunneling current, the repeated scanning resulted in the growth of nanostripes. The stripe orientation, the stripe width, and the spacer width between adjacent nanostripes were found to be dependent on their relative locations from dislocation points where two adjacent gold terraces overlap. The stripe and the spacer width also vary with the distance from these points. The results indicate that such stripes may reflect the strain distributions and the release pathway along the Au surfaces. The results also suggest that the presence of HS-ssDNA molecules enhances the lithography processes on the gold surface by acting as force transmitters.     

Formation of CdS nanoparticles using starch as capping agent

CdS nanoparticles have been synthesized using starch as capping agent in aqueous solution. The morphology and crystalline structure of such samples were measured by high-resolution transmission electron microscopy and X-ray diffraction, respectively. The average grain size of the nanoparticles determined by these techniques was of the order of 5 nm. Photoluminescence of CdS nanoparticles shows a strong emission peak below to the band gap bulk semiconductor attributed to center trap states, also the broadening peak was interpreted in terms of electron-phonon interaction.     

Structural, optical and photoelectrochemical characterization of CdS nanowire synthesized by chemical bath deposition and wet chemical etching

Nanocrystalline thin films of CdS have been grown onto flexible plastic and titanium substrates by a simple and environmentally benign chemical bath deposition (CBD) method at room temperature. The films consist of clusters of CdS nanoparticles. The clusters of CdS nanoparticles in the films were successfully converted into nanowire (NW) networks using chemical etching process. The possible mechanism of the etching phenomenon is discussed. These films were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectrophotometry techniques, respectively. Photoelectrochemical (PEC) investigations were carried out using cell configuration as n-CdS/(1 M NaOH + 1 M Na₂S + 1 M S)/C. The film of nanowires was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. The nanowires have widths in the range of 50-150 nm and have lengths of the order of a few micrometers. Optical studies reveal that the CdS nanowires have value of band gap 2.48 eV, whereas it is 2.58 eV for nanoparticles of CdS. Finally, we report on the ideality of junction improvement of PEC cells when CdS nanoparticles photoelectrode converted into nanowires photoelectrode.     

Position-controlled synthesis of single-walled carbon nanotubes on a transparent substrate by laser-induced chemical vapor deposition

The synthesis of single-walled carbon nanotubes (SWCNTs) on a transparent substrate with multiple-catalyst layer (Fe/Al/Cr: 0.5/15/500 nm) using laser-induced chemical vapor deposition is reported. Ethylene (C₂H₄) mixed with hydrogen (H₂) and a continuous wave Nd:YVO₄ laser (532 nm) were used as the precursor gas and the irradiation source, respectively. It was found that the density and quality of the SWCNT dots varied sensitively to laser irradiance and chamber pressure. From subsequent micro-Raman analyses at different excitation sources (488, 514, 633, and 785 nm), the diameters of the SWCNTs were estimated to be within the range of 0.8-2 nm and that the SWCNT dots were composed of both semiconducting and metallic SWCNTs. It is demonstrated that an array of SWCNT dots can be fabricated at precisely controlled positions of a transparent substrate at room temperature with no need of catalysis patterning.     

Enhancement of electron field emission by carbon coating on vertically aligned Si nanowires

Electron field emission properties of vertically aligned Si nanowires, synthesized by chemically etching p-type Si wafers with different etching times were investigated in detail. Fabrication of Si nanowires was confirmed by field emission scanning electron microscopic investigation. It was observed that a thin layer of amorphous carbon coating over the grown Si nanowires enhanced the field emission properties significantly.     

Fabrication of silver-coated silicon nanowire arrays for surface-enhanced Raman scattering by galvanic displacement processes

Silver-coated silicon nanowire (SiNW) arrays were prepared utilizing galvanic displacement processes consisting of three steps: galvanic displacement deposition of silver particles using a HF-AgNO₃ or NH₄F-AgNO₃ aqueous solution; formation of SiNW arrays by a silver-assisted chemical etching process conducted in the HF-H₂O₂ aqueous solution; deposition of silver particles on the SiNW arrays from the NH₄F-AgNO₃ aqueous solution. The effects of the morphology of pre-deposited silver particles and deposition solution on the formation of silver-coated SiNW arrays were discussed. Surface-enhanced Raman scattering (SERS) performances have been studied using Rhodamine 6G (R6G) probe molecules on the silver-coated SiNW substrates.     

Formation of palladium nanoparticles in poly (o-methoxyaniline) macromolecule fibers: An in-situ chemical synthesis method

We report here a novel in-situ synthetic method for the preparation of poly (o-methoxyaniline) and palladium nanoparticle composite material. Ortho-Methoxyaniline and palladium acetate were used as the precursors; during the reaction o-methoxyaniline was oxidized and forms poly (o-methoxyaniline) and palladium acetate is reduced forming palladium nanoparticles. IR and Raman spectra provide information on the structure of the polymer. The TEM and SEM analysis are used to determine the size of the nanoparticles and the morphology of the polymer respectively.     

Hydrothermal growth of large-scale macroporous TiO<Subscript>2</Subscript> nanowires and its application in 3D dye-sensitized solar cells

Large-scale macroporous TiO₂ nanowires (MTN) were directly grown on spiral-shaped titanium wires as photoanodes of dye-sensitized solar cells (DSSCs) via a facile hydrothermal reaction without any seeds, templates, and TiO₂ powder. The MTN thin film was characterized by SEM, XRD and TEM. The studies revealed that the MTN thin film had better mechanical properties and provided an efficient pathway for the diffusion of liquid electrolyte. The efficiency of 0.86% for the 3D DSSC was obtained with a J _sc of 2.30 mA/cm², V _oc of 616 mV, and FF of 0.61. This MNT-based mini 3D DSSC is a promising photovoltaic device for applications in the fields of high-integrated micro-electronic equipment.     

Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures by local anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possible to use these films as nanolithographic masks for further nanotechnologies, e.g. fabrication of metallic nanostructures by ion-beam bombardment. The ability to control LAO and tip motion can be utilized in fabrication of complex nanostructures finding their applications in nanoelectronic devices, nanophotonics and other high-tech areas.     

Flow assisted synthesis of highly ordered silica nanowire arrays

Silica nanowires were synthesized through a self-supplied vapor–liquid–solid (VLS) mechanism. Unlike randomly entangled nanowires on the substrate, highly ordered nanowire arrays have been successfully fabricated using a sandwich-like configuration to define and enhance the local gas-flow. As-synthesized nanowires were characterized to be amorphous silicon dioxide with Au as catalysts. The role of the sandwich-like structure and the effect of gas-flow on the alignment of silica nanowires are demonstrated.     

Preparation and Size Characterization of Silver Nanoparticles Produced by Femtosecond Laser Ablation in Water

Femtosecond laser ablation of silver plate placed in water is used to produce nanoparticle suspension. The method is easy to operate and the suspension is relatively stable. The optical properties and the size distribution of the suspension are studied with UV-vis absorption spectroscopy and dynamic light scattering, respectively. The shape of the nanoparticles is investigated by an atomic force microscope, which is near spherical. There are two kinds of nanoparticles, small particles with diameter about 35 nm, and large particles with diameter about 120 nm.     

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)