一种与光纤高效耦合的新型大光腔大功率半导体激光器

提出并实现了一种新型多有源区隧道级联大光腔半导体激光器，提高了激光器激射窗口的宽度，得到低于20°的垂直发散角，从而提高了光纤输出的耦合效率.对多种形式和规格的透镜光纤的测试结果表明，耦合效率可以提高30%以上. 关键词： 半导体激光器 大光腔 光纤耦合 透镜光纤     

高功率905 nm InGaAs隧道结串联叠层半导体激光器

设计出了隧道结串联叠层半导体激光器结构,采用分子束外延进行激光器材料的外延生长,材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺,制作成条宽200 m、腔长800 m 的半导体激光器。两隧道结激光器在脉冲宽度100 ns,重复频率10 kHz,30 A工作电流下输出功率达到80 W,峰值发射波长为905.6 nm,器件的阈值电流为0.8 A,水平和垂直方向的发散角分别为7.8和25。     

新型多有源区隧道再生光耦合大功率半导体激光器

针对大功率半导体激光器面临的主要困难,提出并实现了一种隧道再生多有源区耦合大光腔 高效大功率半导体激光器机理.该机理能有效地解决光功率密度过高引起的端面灾变性毁坏 、热烧毁和光束质量差等大功率激光器存在的主要问题.采用低压金属有机化合物气相淀积 方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/InGaAs 应变量子阱有源区和新型多有 源区半导体激光器外延结构,并制备了高性能大功率980nm激光器件.三有源区激光器外微分 量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W. 关键词： 半导体激光器 大功率 金属有机化合物气相沉积     

外延叠层多有源区激光器的结构优化设计

基于分离的非对称大光腔结构,对激射波长为905nm的外延叠层三有源区大功率脉冲半导体激光器的外延结构进行优化设计。通过优化近场光场模式、自由载流子吸收损耗、相邻发光区之间距离以及掺杂浓度分布等关键参数,提高了器件的脉冲峰值功率,降低了内损耗和远场垂直发散角。研制的1mm腔长、100μm条宽的三有源区大功率半导体激光器,经由150ns脉宽和6.67kHz重复频率的脉冲测试,在34.5A脉冲电流强度驱动下实现了122W的脉冲峰值功率输出。器件的斜率效率为3.54 W/A,单个发光区实现了折合91.75%的内量子效率和2.05cm-1的内损耗,水平方向和垂直方向上的半峰全宽远场发散角分别为7.8°和27.6°。     

载流子输运和寄生参数对隧道再生双有源区垂直腔面发射激光器调制特性的影响

建立了一种适用于多量子阱和多有源区的多层速率方程模型. 通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因. 进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析. 关键词： 垂直腔面发射激光器 速率方程 调制特性 隧道再生     

2μm InGaAsSb/AlGaAsSb双波导半导体激光器的结构设计

为了提高2μm InGaAsSb/AlGaAsSb半导体激光器的最大输出功率,减小远场垂直发散角并实现单模稳定输出,在非对称波导结构的基础上设计了具有双波导结构的2μm InGaAsSb/AlGaAsSb半导体激光器.同时,利用相关的物理模型及SimLastip程序语言构建了InGaAsSb/AlGaAsSb Macro文件,利用SimLastip软件对具有不同结构的2μm InGaAsSb/AlGaAsSb半导体激光器进行了数值模拟分析.研究结果表明,双波导结构可以将半导体激光器的有源区限制因子由0.019 2减小至0.011 3,器件的最大输出功率提高了1.7倍,远场垂直发散角由57°减小到48°,器件性能得到了改善.     

GaAs-(AlGa)As大光腔激光器

用液相外延法研制了GaAs-(AlGa)As大光腔激光器,并给出它的一些主要参数如脉冲光功率、光束发散角、波长、外微分量子效率等的测试结果.     

2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计

为实现2 μm低发散角激光,提出在GaSb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小,随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大,光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2 μm GaSb基边发射半导体激光器,其垂直远场发散角可降低到10°以下。     

径向桥电极高功率垂直腔面发射激光器

为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。     

多纵模高光谱分辨率激光雷达马赫-曾德尔干涉仪的视场展宽技术

考虑到多纵模高光谱分辨率激光雷达（MLM-HSRL）接收的大气弹性散射回波具有与激光器发射光束一致的高斯传输特性,因此分析马赫-曾德尔干涉仪（MZI）光程差和透过率时必须要考虑发散角的影响。详细分析入射光束的发散角对大光程差MZI分光性能的影响,仿真计算得到基于空气腔的大光程差MZI所允许的光束发散角要≤0.4 mrad。为了降低发散角对大光程差MZI分光性能的影响,提出一种基于补偿玻璃的大光程差MZI的视场展宽技术。理论分析和仿真结果表明,视场展宽后系统可允许的发散角可达25.6 mrad,视场展宽技术极大地提升了大光程差MZI的分光能力。     

A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam

A novel coupled multi-active-region large optical cavity structure cascaded by a tunnel junction is proposed to solve the problems of facet catastrophic optical damage (COD) and the large vertical divergence caused by the thin emitting area in conventional laser diodes. For a laser with three active regions, a slope efficiency as high as 1.49 W/A, a vertical divergence angle of 17.4 , and a threshold current density of 271 A/cm 2 are achieved. By optimizing the structural parameters, the beam quality is greatly improved, and the level of the COD power increases by more than two times compared with that of the conventional laser.     

Tunnel regenerated coupled multi-active-region large optical cavity laser with high quality beam

A novel coupled multi-active-region large optical cavity structure cascaded by tunnel junction is proposed to solve the problems of catastrophic optical damage (COD) of facet and large vertical divergence caused by the thin emitting area in the conventional laser diode. For the laser with three active regions, a slope efficiency as high as 1.49 W/A, a vertical divergence angle of 17.4°, and a threshold current density of 271 A/cm² are achieved. By optimizing the structure parameters, the beam quality is greatly improved, and the level of COD power increases more than two times compared with that of the conventional laser.     

Nonlinear semiconductor lasers and amplifiers for all-optical information processing

The nonlinear properties of semiconductor lasers and laser amplifiers when subject to optical injection are reviewed and new results are presented for multisection lasers, vertical cavity semiconductor optical amplifiers, and surface-emitting lasers. The main underlying material parameters are outlined and the key design approaches are discussed for both edge-emitting and vertical cavity devices. An overview of theoretical modeling approaches is discussed and a summary of key experimental results is presented. The practical use of optically injected edge-emitting and vertical cavity semiconductor lasers and laser amplifiers is illustrated with examples of applications including, among others, optical logic and chaotic communication.     

Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure

GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized. With this design, the optical field in the transverse direction is extended, and a semiconductor laser with large spot is obtained. For a 300-μm cavity length and 100-μm aperture device under continuous wave (CW) operation, the measured vertical and horizontal far-field divergence angles are 12.2° and 3.0°, respectively. The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm.The equivalent transverse spot size is 3 μm for the fundamental transverse mode, which is a sufficiently large value for the purpose of coupling and manipulation of light.     

Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

980nm半导体激光器腔面膜钝化新技术

研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响.将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比.结果表明,蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11％,比不蒸镀钝化膜的半导体...     

Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction

Thermal characterization of semiconductor lasers is an important issue for optoelectronics. This paper presents our thermoreflectance measurements on two different types of laser diodes: classical ridge laser diodes and vertical cavity surface emitting lasers (VCSELs). We first studied the external temperature increase in ridge diodes in order to determine inhomogeneity. Then, we tried to determine the inner temperature of the VCSELs.     

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

The study of focused ion beam (FIB) milling for making etched facet and semiconductor/air distributed Bragg reflector (DBR) facets of AlGaInP-based red laser diodes (LD) is presented in this letter. For the Ga ion beam current of 100 pA at fixed accelerated voltage 30 kV, FIB milling rate of GaAs was found to be 0.46 μm³/nC. As a trade-off between high reflectivity and enough technical tolerance, the combination of third Bragg orders of semiconductor wall and air gap was chosen. The deeply etched mirror and distributed Bragg reflector facet consisting of pairs of semiconductor wall/air gap on laser diodes (LD) cavity facets with vertical sidewall on AlGaInP LDs were fabricated by focused Ga ion beam milling. Comparison of the AlGaInP LD with the mirrors between cleaved and FIB made facet was given and discussed.     

Absorptive and dispersive bistability in semiconductor injection lasers

Recent progress in the study of both absorptive and dispersive bistability in semiconductor injection lasers is reported. Inhomogeneously excited semiconductor lasers as an absorptive case, and laser diode optical amplifiers and optical injection locking systems of laser diodes as dispersive cases, are described. Applications of bistable semiconductor lasers, such as optical memories, optical regenerative amplifiers and all-optical switching, are also discussed.