Stark broadening parameters of Si I,Si II and Si III lines

Spectral lines emited by first three ionisation species of silicon were studyed in a wide range of plasma parameters. The silicon was present as an impurity in the argon plasma created in an electromagneticT tube. Four various condenser bank energies give the plasma in a range of temperatures 8700 to 16400°K and electron concentrations 2.95·10¹⁷ cm^?3to 5.6·10¹⁷ cm^?3. Measured line widths and shifts were compared with theories of Griem [1, 2] and Sahal Brechet [3, 10]. The agreement is reasonably good, the measured values are in general smaller than calculated ones.     

Thin-film formation of Si clathrates on Si wafers

In this study, we prepared Si clathrate films (Na₈Si₄₆ and Na_xSi₁₃₆) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10⁻² Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na₈Si₄₆ and Na_xSi₁₃₆ using the appropriate crystalline orientation of Si substrates.     

Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

A multilayered Si nanocrystal-doped SiO₂/Si (or Si-nc:SiO₂/Si) sample structure is studied to acquire strong photoluminescence (PL) emission of Si via modulating excess Si concentration. The Si-nc:SiO₂ results from SiO thin film after thermal annealing. The total thickness of SiO layer remains 150 nm, and is partitioned equally into a number of sublayers (N = 3, 5, 10, or 30) by Si interlayers. For each N-layered sample, a maximal PL intensity of Si can be obtained via optimizing the thickness of Si interlayer (or d_Si). This maximal PL intensity varies with N, but the ratio of Si to O is nearly a constant. The brightest sample is found to be that of N = 10 and d_Si = 1 nm, whose PL intensity is ∼5 times that of N = 1 without additional Si doping, and ∼2.5 times that of Si-nc:SiO₂ prepared by co-evaporating of SiO and Si at the same optimized ratio of Si to O. Discussions are made based on PL, TEM, EDX and reflectance measurements.     

Angular correlations in 28Si + 28Si resonances

Recent particle—particle—γ coincident measurements on a ²⁸Si+²⁸Si resonance have suggested “vanishing spin alignments”. New analyses of the spin alignments with a molecular model are presented. It is clarified that due to a triaxial deformation of the total system a wobbling mode (K-mixing) appears to give rise to spin disalignment.     

硅纳米结构中硅空位缺陷引发的双峰蓝光发射

报道了在硅纳米结构中417nm和436nm双峰结构的蓝光发射的实验和理论研究结果．制备了四种包含和没有包含β-SiC纳米晶粒的硅纳米结构，观察到了417nm和436nm的双峰蓝光发射．光致发光谱的分析和微结构的观察揭示了蓝光发射与硅纳米结构中过剩硅缺陷中心的存在有关．计算了由过剩硅原子形成的含有硅空位缺陷的纳米晶粒的电子能级，发现计算所得的态密度的特征与观察到的双峰发射吻合．这项工作提出了在许多硅纳米结构中存在417nm和436nm蓝光发射的一种可能的机制．     

Deformation effects in the 28Si+12C and 28Si+28Si reactions

The possible occurrence of highly deformed configurations is investigated in the ⁴⁰Ca and ⁵⁶Ni di-nuclear systems as formed in the ²⁸Si + ¹²C, ²⁸Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the ICARE charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large ⁸Be cluster emission of a binary nature.     

Optical emission from excess Si defect centers in Si nanostructures

Four groups of Si nanostructures with and without beta-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.     

Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure

A heterostructure of n-type hydrogenated nanocrystalline silicon (nc-Si:H) film with p-type crystalline silicon, i.e., (n)nc-Si:H/(p)C-Si, was fabricated to investigate carrier characteristics and transport. After electrical experiments, carrier information, such as hole and electron as well as 2-dimension electronic gas in the studied system, was identified respectively. The forward current conduction was analyzed while the reverse current transport was distinguished as different mechanisms within the different range of negative applied voltage. The performed study also leads us to ascribe the main origin of short transient times on the produced structure to a tunneling mechanism.     

Study and applications of plasma-modified Si and porous Si surfaces

In this work we have studied the electrical, chemical and physical properties of CH_x/silicon and CH_x/porous silicon (PS). The hydrocarbon (CH_x) layer has been deposited by plasma of methane under argon atmosphere. Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR) Spectroscopy and photoluminescence have been used to characterize the CH_x/p-Si, CH_x/PS interfaces and, electrolyte/(CH_x/p-Si) and CH_x/PS/p-Si structures. The results show that in the case of bare silicon, the CH_x layers act as a resistant film to HF electrolyte and can be used as a potential tool for ultra-low thickness for masking and patterning. The deposition of CH_x layer on PS shows that CH_x/PS/p-Si structure presents a rectifying behaviour and can be used for detecting low concentration of large variety of gases. In addition CH_x coated PS samples exhibit more intense luminescence than that observed from an uncoated PS surface where red luminescence is shown .In conclusion, the results clearly demonstrate the interest and applications of Si and PS electrodes coated with hydrocarbon groups.     

用硅离子注入方法制备的纳米硅的拉曼散射研究

在直角散射配置下测量了纳米硅样品的拉曼散射谱及其退火温度的关系。结果表明,在８００℃以下退火的样品只观察到单晶硅衬底的光学声子模,在９００℃以上退火,才观察到纳米硅的特征拉曼散射峰。在１２００℃下退火后,纳米硅的特征拉曼散射峰消失,观察到类似于非晶硅的光学声子特征峰,可能表示纳米硅不能承受这样的高温热退火。这些结果进一步证实了光致发光谱的结果。     

硅基超晶格Si1-xSnx/Si的能带结构

由于Si基发光材料能与现有的Si微电子工艺兼容,其应用前景被广泛看好. 设计具有直接带隙的Si基材料,备受实验和理论研究者的关注. 本文根据芯态效应、电负性差效应和对称性效应设计了Si基超晶格Si_1－xSn_x/Si. 其中Si_0.875Sn_0.125/Si为直接带隙材料. 在密度泛函框架内,采用平面波赝势法计算表明,Si_0.875Sn_{0.125相似文献}   

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT?=?0.2 and 1.4 at T?=?300?and 900?K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.     

Amorphous Si critical dimension structures with direct Si lattice calibration

Developing highly accurate critical dimension standards is a significant task for nanoscale metrology. In this paper, we put forward an alternative approach to fabricate amorphous Si critical dimension structures with direct Si lattice calibration in the same frame scanning transmission electron microscopy image. Based on the traceable measurement analysis, the optimized method can provide the same calibration accuracy and increase the fabrication throughput and lower the cost simultaneously, which benefits the application needs in atomic force microscopy(AFM) tip geometry characterization,benchmarking measurement tools, and conducting comparison measurements between different approaches.     

Biexcitons in Si

We observe a new peak in the photoluminescence spectrum of intrinsic Si which we attribute to the recombination of an electron-hole pair in a biexciton leaving behind a free exciton. A calculation of the emission line shape based on a simple model is found to be in good agreement with experiment. From this theoretical fit we deduce a binding energy of 1.2 meV and a ‘radius’ of 100 Å for the biexciton.     

Magnetic ordering in HoRu2Si2, HoRh2Si2, TbRh2Si2 and TbIr2Si2 by neutron diffraction

Neutron diffraction study of polycrystalline HoRu₂Si₂, HoRh₂Si₂, TbRh₂Si₂, and TbIr₂Si₂ was performed in the temperature range between 4.2 and 300 K. For HoRu₂Si₂ the magnetic spin alignment of a linear transverse wave mode below the Néel temperature 19 K is observed. This static moment wave is propagating along the b-axis with k=(0, 0.2, 0) and is polarized in the c-axis. The root-mean-square and maximum saturation moments per Ho atom are 9.26 and 13.09μ_B, respectively. HoRh₂Si₂, TbRh₂Si₂ an TbIr₂Si₂ are simple collinear antiferromagnets of +-+- type with Néel temperatures of (27±1), (98±2) and (72±3) K, respectively. For TbRh₂Si₂ and TbIr₂Si₂ magnetic moments are localized on RE ions only and are aligned along the tetragonal axis, while for HoRh₂Si₂ they form an angle ø = (28±3)°.     

Auger-rekombination in Si

The Auger-recombination coefficient is determined to be C_n = 1,7·10^?31 cm⁶ sec^?1 and C_p = 1,2·10^?31 cm⁶ sec^?1 in Si. The Auger-recombination is not momentum conserving.