N掺杂锐钛矿TiO2电子结构的第一性原理研究

为了研究N掺杂对锐钛矿型TiO2电子结构的影响,进而揭示N掺杂导致锐钛矿型TiO2的禁带宽度变小的机理,对N掺杂TiO2进行了基于密度泛函理论的第一性原理研究.通过对能带、态密度及电子分布密度图的分析,发现在N掺杂后,N原子与Ti原子在导带区,发生了强烈的相互关联作用,致使Ti原子3d轨道上的电子向N原子2p轨道发生移动,使得导带降低了,从而使得TiO2导带的禁带宽度变小.理论预测可以发生红移现象,与实验结果对比分析,理论与实验基本相符.     

第一性原理研究Eu/N共掺杂锐钛矿TiO2光催化剂的电子和光学性质

基于密度泛函理论的第一性原理平面波赝势方法, 运用Vasp方法计算了Eu, N掺杂及Eu/N共掺杂锐钛矿TiO₂的结构, 并分析了其电子及光学性质. 通过计算发现有一些Eu的4f态电子在Eu掺杂锐钛矿TiO₂的体系的费米能级附近出现杂质能级, 并且N掺杂会使得锐钛矿TiO₂的禁带宽度减小. 对于共掺杂体系而言, Eu/N共掺杂的协同效应能导致锐钛矿TiO₂的晶格畸变及禁带宽度减小. 与此同时, 计算得到的光吸收谱表明Eu/N混合掺杂锐钛矿TiO₂展现出了明显的光谱吸收边缘红移. 这些计算结果表明Eu/N共掺杂锐钛矿TiO₂具有优良的光催化活性. 关键词： 2')" href="#">TiO₂ 共掺杂 可见光催化剂 密度泛函理论     

N/Cu共掺杂锐钛矿型TiO2第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势法, 采用局域自旋密度近似加Hubbard U值方法研究了纯锐钛矿型TiO₂, N, Cu单掺杂TiO₂及N/Cu共掺杂TiO₂ 的晶体结构、电子结构和光学性质. 研究结果表明, 掺杂后晶格发生相应畸变, 晶格常数变大. N 和Cu的掺杂在TiO₂禁带中引入杂质能级, 禁带宽度发生相应改变. 对于N掺杂TiO₂禁带宽度减小较弱, 而Cu掺杂和N/Cu共掺TiO₂禁带宽度显著降低, 导致吸收光谱明显红移, 光学催化性增强, 有利于实际应用.     

Magnli相亚氧化钛Ti8O15的电子结构和光学性能的第一性原理研究

采用基于密度泛函理论的平面波超软赝势法研究了Magneli相亚氧化钛Ti8O15的电子结构和光学性能.计算出的能带结构显示Ti₈O₁₅相比锐钛型TiO₂禁带宽度大幅度降低.态密度分析表明,其原因在于Ti₈O₁₅的O原子的2p轨道以及Ti原子的3p,3d轨道相对于TiO₂的相应轨道向左产生了偏移,同时由于O原子的缺失使得Ti原子的3d,3p轨道多余电子在Fermi能级附近聚集形成新的电子能级.态密度分析结果还显示,相对于TiO₂,Ti₈O₁₅Fermi能级附近电子格局发生了如下变化:O原子的2p轨道电子贡献减少,Ti原子的3d轨道的电子对Fermi能级贡献增大.光吸收计算图谱表明,TiO₂仅在紫外光区有较高的光吸收能力,而Ti₈O₁₅由于禁带宽度变窄引起光吸收范围红移到可见光区,从而在紫外光区和可见光区都有较高的光吸收能力,计算结果与实验得到的紫外-可见漫反射吸收光谱结果一致.     

N,Fe, La三掺杂锐钛矿型TiO2能带调节的理论与实验研究

采用基于密度泛函理论(DFT)的平面波超软赝势方法(PWPP), 利用Material studio 计算N, Fe, La三种元素掺杂引起的锐钛矿TiO₂晶体结构、能带结构和态密度变化. 并通过溶胶-凝胶法制得锐钛矿型本征TiO₂, N, Fe共掺杂TiO₂和N, Fe, La共掺杂TiO₂; 用X射线衍射和扫描电镜表征结构; 紫外-可见分光光度计检测TiO₂对甲基橙的降解效率变化. 计算结果表明, 由于N, Fe, La三掺杂TiO₂的晶格体积、键长等发生变化, 导致晶体对称性下降, 光生电子-空穴对有效分离, 同时在导带底和价带顶形成杂质能级, TiO₂禁带宽度由1.78 eV变为1.35 eV, 减小25%, 光吸收带边红移, 态密度数增加, 电子跃迁概率提升, 光催化能力增加. 实验结果表明: 离子掺杂使颗粒变小, 粒径大小: 本征TiO₂>N/Fe_TiO₂>N/Fe/La_TiO₂, 并测得N/Fe/La_TiO₂发光峰425 nm, 能隙减小, 光催化能力比N/Fe_TiO₂强, 增强原因是杂质能级和电子态数量增加引起.     

P掺杂锐钛矿相TiO2的第一性原理计算

利用基于密度泛函理论的第一性原理对不同P掺杂形式(P替位Ti, P替位O, 间隙P)的锐钛矿相TiO₂的晶格常数、电荷布居、能带结构、分态密度和吸收光谱进行了计算. 结果表明, P替位Ti时, TiO₂体积减小, P替位O和间隙P的存在使TiO₂的体积膨胀; 替位Ti的P和间隙P均有不同程度的氧化, 而替位O的P带有负电荷. 三种P掺杂形式均导致锐钛矿相TiO₂禁带宽度的增大, 并在TiO₂禁带之内引入了掺杂局域能级. P掺杂导致TiO₂禁带宽度增大的程度依次为: 间隙P>P替位Ti>P替位O. 吸收光谱的计算结果表明, P替位Ti并不能增强TiO₂的可见光吸收能力, 但间隙P的存在大幅提高了TiO₂的可见光光吸收能力, 间隙P有可能是造成实验上P掺杂增强锐钛矿相TiO₂光催化活性的重要原因. 关键词： P掺杂 2')" href="#">锐钛矿相TiO₂ 第一性原理     

Magnéli相亚氧化钛Ti8O15的电子结构和光学性能的第一性原理研究

采用基于密度泛函理论的平面波超软赝势法研究了Magnéli相亚氧化钛Ti₈O₁₅的电子结构和光学性能. 计算出的能带结构显示Ti₈O₁₅相比锐钛型TiO₂禁带宽度大幅度降低. 态密度分析表明, 其原因在于Ti₈O₁₅的O原子的2p轨道以及Ti原子的3p, 3d轨道相对于TiO₂的相应轨道向左产生了偏移, 同时由于O原子的缺失使得Ti原子的3d, 3p轨道多余电子在Fermi能级附近聚集形成新的电子能级. 态密度分析结果还显示, 相对于TiO₂, Ti₈O₁₅ Fermi能级附近电子格局发生了如下变化: O原子的2p轨道电子贡献减少, Ti原子的3d轨道的电子对Fermi能级贡献增大. 光吸收计算图谱表明, TiO₂仅在紫外光区有较高的光吸收能力, 而Ti₈O₁₅由于禁带宽度变窄引起光吸收范围红移到可见光区, 从而在紫外光区和可见光区都有较高的光吸收能力, 计算结果与实验得到的紫外-可见漫反射吸收光谱结果一致. 关键词： 第一性原理 8O₁₅')" href="#">Magnéli相亚氧化钛Ti₈O₁₅ 电子结构 光学性能     

S掺杂对锐钛矿相TiO2电子结构与光催化性能的影响

采用基于第一性原理的平面波超软赝势方法研究了掺杂不同价态S的锐钛矿相TiO₂的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明硫在掺杂体系中的存在形态与实验中的制备条件有关；掺杂后晶格发生畸变、原子间的键长及原子的电荷量也发生了变化，导致晶体中的八面体偶极矩增大； S 3p态与O 2p态、Ti 3d态杂化而使导带位置下移、价带位置上移及价带宽化，从而导致TiO₂的禁带宽度变窄、光吸收曲线红移到可见光区.这些结果很好地解释了S掺杂锐钛矿相TiO₂在可见光下具有优良的光催化性能的内在原因.根据计算结果分析比较了硫以不同离子价态掺杂对锐钛矿相TiO₂电子结构和光催化性能影响的差别. 关键词： 2')" href="#">锐钛矿相TiO₂ S掺杂 第一性原理 光催化性能     

C掺杂锐钛矿相TiO2吸收光谱的第一性原理研究

运用第一性原理,对C掺杂锐钛矿相TiO₂的电子结构进行了研究,从能带结构理论解释了C掺杂TiO₂吸收光谱的一些实验现象.发现在C掺杂后的锐钛矿相TiO₂的禁带宽度增大,并且在带隙中出现了杂质能级,这些杂质能级主要是由C 2p轨道上的电子构成的,它们之间是独立的,正是这些独立的杂质能级使TiO₂掺杂后可以发生可见光响应.价带上的电子可以吸收一定能量的光子跃迁到杂质能级,而杂质能级上的电子也可以吸收一定能量的光子跃迁到导带,所以从理论上可以计算出掺杂后的TiO₂在可见光范围内存在两个吸收边,与实验中所得到的现象相一致. 关键词： C掺杂 2')" href="#">锐钛矿TiO₂ 能带结构 吸收光谱     

(Nb,N)共掺杂锐钛矿电子结构和光学性质的第一性原理研究

二氧化钛（TiO₂）作为一种性能优良的光催化剂已经受到越来越多的关注.本研究采用密度泛函理论的第一性原理和广义梯度近似+U方法,对锐钛矿结构TiO₂晶体三种可能的（Nb,N）共掺杂TiO₂的几何结构、形成能、能带结构、电子密度和光吸收系数进行了研究,并与单掺杂（Nb/N）体系进行了对比.对掺杂后体系的几何结构进行的计算表明杂质原子掺入后晶格发生了不同程度的畸变.此外,（Nb,N）共掺杂体系与纯TiO₂相比,其禁带宽度和吸收边较小.同时,与N掺杂TiO₂相比,N的2p态在共掺杂情形下变为完全占据,从而减少了电子空穴对的复合.而且共掺杂体系的形成能比N单掺杂体系低,因而更加稳定.因此,（Nb,N）共掺杂可以很好地提升锐钛矿型TiO₂在可见光波段的光催化性能.     

N掺杂锐钛矿TiO2光学性能的第一性原理研究

用平面波赝势方法(PWP)计算了N掺杂锐钛矿型TiO₂前后的光学特性,即介电函数虚部ε₂(ω)，光学吸收系数I(ω)和反射率R(ω). 并从能带结构上解释了为什么掺N后锐钛矿型TiO₂的光学谱在2.93，3.56和3.97eV处相对掺杂前会出现3个峰值的原因. 从光谱图上分析得出，掺杂后TiO₂要发生红移现象，实验现象证实了这一结果. 关键词： N掺杂 2')" href="#">锐钛矿型TiO₂ 光学性能 第一性原理     

Electronic and optical properties of pure and Mo doped anatase TiO2 using GGA and GGA+U calculations

Comparative GGA and GGA+U calculations for pure and Mo doped anatase TiO₂ are performed based on first principle theory, whose results show that GGA+U calculation provide more reliable results as compared to the experimental findings. The direct band gap nature of the anatase TiO₂ is confirmed, both by using GGA and GGA+U calculations. Mo doping in anatase TiO₂ narrows the band gap of TiO₂ by introducing Mo 4d states below the conduction band minimum. Significant reduction of the band gap of anatase TiO₂ is found with increasing Mo doping concentration due to the introduction of widely distributed Mo 4d states below the conduction band minimum. The increase in the width of the conduction band with increasing doping concentration shows enhancement in the conductivity which may be helpful in increasing electron–hole pairs separation and consequently decreases the carrier recombination. The Mo doped anatase TiO₂ exhibits the n-type characteristic due to the shifting of Fermi level from the top of the valence band to the bottom of the conduction band. Furthermore, a shift in the absorption edge towards visible light region is apparent from the absorption spectrum which will enhance its photocatalytic activity. All the doped models have depicted visible light absorption and the absorption peaks shift towards higher energies in the visible region with increasing doping concentration. Our results describe the way to tailor the band gap of anatase TiO₂ by changing Mo doping concentration. The Mo doped anatase TiO₂ will be a very useful photocatalyst with enhanced visible light photocatalytic activity.     

锐钛矿型TiO2(101)面原子几何及弛豫结构的第一性原理计算

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面的表面能和表面原子弛豫结构.首先对TiO₂(101)面的6种不同的表面原子终止结构的体系总能量进行了计算,结果表明终止原子为两配位的O原子、次层为五配位的Ti原子的表面结构最为稳定.针对该表面研究了表面能和原子弛豫与模型中原子层数和真空厚度的关系,当原子层数为12层,真空厚度为0.4nm时,表面能收敛度小于0.01J/m².研究发现:表面上两配位的O原子向里移动约0.0012nm,五配 关键词： 第一性原理 2')" href="#">TiO₂ 表面结构 弛豫     

Electronic structure and hot carrier relaxation in ⟨001⟩ anatase TiO2 nanowire

We present an electronic structure and non-adiabatic excited state dynamics study of ?001? anatase TiO₂ nanowire (NW) by combining density matrix formalism and ab initio electronic structure calculations. Our results show that quantum confinement increases the energy gap as the dimension of TiO₂ is reduced from the bulk to a NW with a diameter of several nanometres and that the probability of electronic transitions induced by lattice vibrations for the NW follows band gap law. The electron non-radiative relaxation to the bottom of the conduction band is involving Ti 3d orbitals, while the hole non-radiative relaxation of holes to the top of the valence band occurs by subsequent occupation of O 2p orbitals.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

Electronic properties of anatase TiO2 doped by lanthanides: A DFT+U study

The effects of mono-doping of 4f lanthanides with and without oxygen vacancy defect on the electronic structures of anatase TiO₂ have been studied by first-principles calculations with DFT+U (DFT with Hubbard U correction) to treat the strong correlation of Ti 3d electrons and lanthanides 4f electrons. Our results revealed that dopant Ce is easy to incorporate into the TiO₂ host by substituting Ti due to its lower substitutional energy (∼−2.0 eV), but the band gap of the system almost keeps intact after doping. The Ce 4f states are located at the bottom of conduction band, which mainly originates from Ti 3d states. The magnetic moment of doped Ce disappears due to electron transfer from Ce to the nearest O atoms. For Pr and Gd doping, their substitutional energies are similar and close to zero, indicating that both of them may also incorporate into the TiO₂ host. For Pr doping, some 4f spin-down states are located next to the bottom of the conduction band and narrow the band gap of the doping system. However, for Gd doping, the 4f states are located in deep valence band and there is no intermediate band in the band gap. The magnetic moment of dopant Gd is close to the value of isolated Gd atom (∼7 μB), indicating no overlapping between Gd 4f with other orbitals. For Eu, it is hard to incorporate into the TiO₂ host due to its very higher substitutional energy. The results also indicated that oxygen vacancy defect may enhance the adsorption of the visible light in Ln-doped TiO₂ system.     

First-principle calculations on optical properties of C-N-doped and C-N-codoped anatase TiO2

The electronic structures, dipole moment and optical properties of C-N-doped and C-N-codoped anatase titanium dioxide (TiO₂) are studied using the plane-wave ultrasoft pseudopotential method of density functional theory (DFT). The results revealed that the absorption coefficients of pure TiO₂ and N-doped TiO₂ are consistent with experimental values in the visible-light region. The bands originating from C/N-2p states lie in the band gap of doped TiO₂. A visible-light absorption edge red-shift can be observed. The atomic charges have changed, resulting in devation of the center of gravity of the negative electric charge from the positive electric charge in the super-cell, and their dipole moment would not be zero. The dipole moment has large influence on the optical responses in the visible region of TiO₂. Because of the small distance (0.531 nm) between C and N atoms, the covalent bond component was easily enhanced between C atom and adjacent O atom, the covalent bonds making it more difficult for the carrier transfer. Moreover, its optical absorption coefficient is going to reduce in the visible-light region. Under the condition of the larger distance (0.691 nm) between C and N atoms, their interaction can be reduced, which is beneficial to electrons transition; as a result, a significant improvement of the photocatalytic activity of TiO₂ has been found under the visible-light irradiation.