Absorption coefficients of O3 at CO2 laser wavelengths

The O₃ absorption coefficients for the rotational lines P(12)–P(28) of the 9.4 μm emission band of the CO₂ laser are presented. Measurements were made in O₃–air dilute mixtures (20–600 ppm) at 25°C and a total pressure of 1013.25 h Pa using a frequency stabilized cw CO₂ laser and values have been determined with greater precision than in previously reported studies.     

Thermodynamic modeling of the ZrO2–YO1.5 system

In the present work, an optimized set of Gibbs energy functions is proposed for the Y–Zr–O ternary system. We focus on the ZrO₂–YO_1.5 quasi-binary system, but reoptimizations of the Zr–O and Y–O binary systems are included as well. The parameters for the Y–Zr binary system were taken from a previous assessment.

The ZrO₂–YO_1.5 system was treated as a quasi-binary section of the Y–Zr–O ternary system. The existing experimental data on the ZrO₂–YO_1.5 system were carefully reviewed. The related parameters were optimized using both thermodynamic data and phase diagram data. A calculated phase diagram of the ZrO₂–YO_1.5 system is presented. Our optimization agrees well with most experimental data. Two calculated isothermal sections of the Y–Zr–O system at 1500 and 2000 K are also included.     

Effects of precursors on nucleation in atomic layer deposition of HfO2

Atomic layer deposition of hafnium dioxide (HfO₂) on silicon substrates was studied. It was revealed that due to low adsorption probability of HfCl₄ on silicon substrates at higher temperatures (450–600 °C) the growth was non-uniform and markedly hindered in the initial stage of the HfCl₄–H₂O process. In the HfI₄–H₂O and HfI₄–O₂ processes, uniform growth with acceptable rate was obtained from the beginning of deposition. As a result, the HfI₄–H₂O and HfI₄–O₂ processes allowed deposition of smoother, more homogeneous and denser films than the HfCl₄–H₂O process did. The crystal structure developed, however, faster at the beginning of the HfCl₄–H₂O process.     

Photo-operated two-photon absorption effects in the GeSe2–Ga2S3–PbI2 glasses

The possibility to operate the two-photon absorption (TPA) of newly synthesized GeSe₂–Ga₂S₃–PbI₂ glasses using the CO laser beam (λ=5.5 μm) as a photoinducing one has been demonstrated. As the fundamental laser beam we have used the illumination of 10.6 μm passively modulated 0.5 ns CO₂ laser with a rate repetition of about 10 Hz. We have established that the maximal photoinduced TPA is observed for the 8% doped samples (up to 14 cm/GW), which is achieved at a pump CO laser pump power density equal to about 0.6 GW/cm². The undoped PbI₂ samples show the TPA maximum at a pump power density of about 0.2 cm/GW. The minimal TPA values were observed for the samples with 5% of PbI₂. The obtained results show that these materials can be used as effective optically operated optical limiters.     

Effect of WO3 on the spectroscopic properties in Er/Yb co-doped bismuth–borate glasses

The spectroscopic properties of Er³⁺/Yb³⁺ co-doped Bi₂O₃–B₂O₃–WO₃ (BBW) glasses were analyzed and discussed. The effect of WO₃ content on the absorption spectra, the Judd–Ofelt parameters Ω_t (t=2, 4, 6), emission spectra and the lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition were also investigated. With the substitution of WO₃ for B₂O₃, the measured lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition increase from 0.98 to 1.31 ms and from 38.2% to 49.2%, respectively. The effective width of emission band and the emission cross-section both decrease slightly. And the emission spectra is analyzed via the different curve (σ_e−σ_a) of BBW glasses, the influence of OH⁻is also discussed.     

Investigation of 1.3 μm emission in Nd-doped bismuth-based oxide glasses

Nd₂O₃-doped 43Bi₂O₃–xB₂O₃–(57−x)SiO₂–1.0Nd₂O₃ (x=57, 47, 39, 28.5, 19.5, 10, 0 mol%) bismuth glasses were prepared by the conventional melt-quenching method, and the Nd³⁺: ⁴F_3/2→⁴I_13/2 fluorescence properties had been studied in an oxide system Bi₂O₃–B₂O₃–SiO₂. The Judd–Ofelt analysis for Nd³⁺ ions in bismuth boron silicate glasses was also performed on the basis of absorption spectrum, and the transition probabilities, excited-state lifetimes, the fluorescence branching ratios, quantum efficiency and the stimulated emission cross-sections of ⁴F_3/2→⁴I_13/2 transition were calculated and discussed. The stimulated emission cross-sections of 1.3 μm were quite large due to a large refractive index of the host. Although the effective bandwidths decreased with increasing SiO₂ content, quantum efficiencies and stimulated emission cross-sections enhanced largely with increasing SiO₂ content.     

Nature of intrinsic luminescence in the glasses of CaO–Ga2O3–GeO2 system

The intrinsic luminescence of glasses of the CaO–Ga₂O₃–GeO₂ system has been investigated. High chemical purity and optical quality glasses, both undoped and doped with transition and rare-earth ions with different compositions, were obtained by high-temperature synthesis. The influences of the basic glass composition, impurities (Cr³⁺, Mn²⁺, Eu²⁺, Nd³⁺, Ho³⁺, Er³⁺, and Ce³⁺) and different kinds of excitation, on the intrinsic luminescence of the CaO–Ga₂O₃–GeO₂ glasses were investigated. The nature and possible mechanisms of the intrinsic luminescence in glasses of this system are discussed. The proposed models of intrinsic luminescence are supported by electron spin resonance spectroscopy.     

Study on the structure dependent ultrafast third-order optical nonlinearity of GeS2–In2S3 chalcogenide glasses

The results of the femtosecond time-resolved optical Kerr at 820 nm in GeS₂–In₂S₃ chalcogenide glasses indicate that the response time in GeS₂–In₂S₃ glasses is subpicosecond, which is predominantly due to the distortion of the electron cloud. The value of χ⁽³⁾ in 0.95GeS₂–0.05In₂S₃ glass is also as large as 2.7 × 10⁻¹³ esu, and it reduces with the addition of In₂S₃, which may be ascribed to the microstructure evolution of GeS₂–In₂S₃ glasses. It is deduced that the intrinsic [Ge(In)S₄] tetrahedral structure units that possess the high hyperpolarizability may do great contribution to the enhancement of third-order optical nonlinearity while [S₃Ge–GeS₃] ethane-like molecular units make no considerable contribution to that in femtosecond time scale. These GeS₂–In₂S₃ and GeS₂–In₂S₃-based chalcogenide glasses would be expected to be the promising materials for all-optical switching devices.     

The influence of different fabrication processes on characteristics of excess Bi2O3-doped 0.95 (Na0.5Bi0.5)TiO3–0.05 BaTiO3 ceramics

In this study, we will develop the influences of the excess x wt% (x=0, 1, 2, and 3) Bi₂O₃-doped and the different fabricating process on the sintering and dielectric characteristics of 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃ ferroelectric ceramics with the aid of SEM and X-ray diffraction patterns, and dielectric–temperature curves. The 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ ceramics are fabricated by two different processes. The first process is that (Na_0.5Bi_0.5)TiO₃ composition is calcined at 850 °C and BaTiO₃ composition is calcined at 1100 °C, then the calcined (Na_0.5Bi_0.5)TiO₃ and BaTiO₃ powders are mixed in according to 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions. The second process is that the raw materials are mixed in accordance to the 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions and then calcining at 900 °C. The sintering process is carried out in air for 2 h from 1120 to 1240 °C. After sintering, the effects of process parameters on the dielectric characteristics will be developed by the dielectric–temperature curves. Dielectric–temperature properties are also investigated at the temperatures of 30–350 °C and at the frequencies of 10 kHz–1 MHz.     

From crystalline to glassy gallium fluoride materials: an NMR study of Ga and Ga quadrupolar nuclei

Owing to the implementation of acquisition techniques specific for nuclei with very large quadrupolar interaction (full shifted echo and variable offset cumulative spectra (VOCS)), NMR spectra of ⁶⁹Ga and ⁷¹Ga are obtained in crystallised (PbGaF₅, Pb₃Ga₂F₁₂, Pb₉Ga₂F₂₄ and CsZnGaF₆) and glassy (PbF₂–ZnF₂–GaF₃) gallium fluorides. Simulations of both static (full echo or VOCS) and 15 kHz MAS spectra allow to obtain consistent determinations of isotropic chemical shifts and very large quadrupolar parameters (ν_Q up to 14 MHz). In the crystalline compounds whose structures are unknown, the number and the local symmetry of the different gallium sites are tentatively worked out. For the glassy systems, a continuous Czjzek's distribution of the NMR quadrupolar parameters accounts for the particular shape of the NMR spectrum.     

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface

Zirconium oxide (ZrO₂) is one of the leading candidates to replace silicon oxide (SiO₂) as the gate dielectric for future generation metal-oxide-semiconductor (MOS) based nanoelectronic devices. Experimental studies have shown that a 1–3 monolayer SiO₂ film between the high permittivity metal oxide and the substrate silicon is needed to minimize electrical degradation. This study uses density functional theory (DFT) to investigate the initial growth reactions of ZrO₂ on hydroxylated SiO₂ by atomic layer deposition (ALD). The reactants investigated in this study are zirconium tetrachloride (ZrCl₄) and water (H₂O). Exchange reaction mechanisms for the two reaction half-cycles were investigated. For the first half-reaction, reaction of gaseous ZrCl₄ with the hydroxylated SiO₂ surface was studied. Upon adsorption, ZrCl₄ forms a stable intermediate complex with the surface SiO₂–OH^* site, followed by formation of SiO₂–O–Zr–Cl^* surface sites and HCl. For the second half-reaction, reaction of H₂O on SiO₂–O–Zr–Cl^* surface sites was investigated. The reaction pathway is analogous to that of the first half-reaction; water first forms a stable intermediate complex followed by evolution of HCl through combination of a Cl atom from the surface site and an H atom from H₂O. The results reveal that the stable intermediate complexes formed in both half-reactions can lead to a slow film growth rate unless process parameters are adjusted to lower the stability of the complex. The energetics of the two half-reactions are similar to those of ZrO₂ ALD on ZrO₂ and as well as the energetics of ZrO₂ ALD on hydroxylated silicon. The energetics of the growth reactions with two surface hydroxyl sites are also described.     

Electric conductivity and relaxation in ZnF2–AlF3–PbF2–LiF glasses

The electric conductivity of ZnF₂–AlF₃–PbF₂–LiF glasses has been studied in the frequency range 10 Hz–2 MHz and in the temperature range from 300 K to just below the glass transition temperature. The conductivity decreases with the increase in the LiF content in the composition, which results from the trapping of F⁻ ions by Li⁺ ions. Small values of the stretching exponent β are observed for the present glasses. The value of the decoupling index decreases with an increase in LiF content, consistent with the composition dependence of the conductivity.     

Pinning enhancement in MgB2-magnetic particles composites

The temperature dependence of microwave absorption hysteresis is measured in superconducting composites, prepared from MgB₂ and powders of magnetic Ni, Co, and non-magnetic Ti. In MgB₂–Ni and MgB₂–Ti composites the increase of microwave absorption hysteresis, by 150% and 25%, respectively, is found. In both cases this is connected with pinning enhancement. In MgB₂–Co composites a decrease of the superconducting transition temperature and worsening of pinning properties are observed.     

Competing thermal relaxation processes in response to intrinsic defects produced by exposing SiO2 to synchrotron radiation

Irradiation of SiO₂ with soft X-ray photons (hν>100 eV) produces a variety of defects, of which E₁′ centers and neutral Si–Si bonds are mainly responsible for the dielectric response change. The thermal processes that modify the structures around the defect sites have been investigated by in situ spectroscopic ellipsometry. Annealing the irradiated SiO₂ film diminishes the number of defects which are assigned to E₁′ centers by about half. The competing channels for annihilation of E₁′ centers are the recovery of the Si–O–Si bonding configuration and, in the opposite direction, the decomposition of the material into volatile products until the network is completely restructured. The other half of the defects are converted to Si–Si bond units and precipitates as nanocrystalline particles of Si.     

Laser irradiation of AISI 316L stainless steel coated with Si3N4 and Ti

AISI 316L stainless steel was laser surface treated with different compositions of Si₃N₄ and Ti under various laser-processing parameters to improve its surface hardness through reinforcement of Ti-based silicides. The laser-treated regions exhibited improved surface hardness (250–1000 HV), variations in the surface morphology (smooth and bowl like) and presence of cracks and pores depending upon the Si₃N₄–Ti composition and laser-processing parameters. The study shows that when the Si₃N₄–Ti composition is 75–25 wt% and laser parameters are 1.5 kW laser power and 1.0 m min⁻¹ scan speed, a laser-treated region with high hardness of about 800 HV and smooth surface morphology as well as free from pores and cracks is observed. The X-ray diffractometer (XRD) and Energy-Dispersive Spectroscopy (EDS) analyses show that the laser surface-treated region has reinforced phase of Ti₅Si₃ and retained austenitic structure. The reinforced phase gives rise to very high hardness (or wear resistance) and also a corrosion resistance.     

X-ray photoelectron spectroscopy characterization of composite TiO2–poly(vinylidenefluoride) films synthesised for applications in pesticide photocatalytic degradation

X-ray photoelectron spectroscopy (XPS) was adopted for the analytical characterization of composite titanium dioxide–poly(vinylidenefluoride) (TiO₂–PVDF) films developed for applications in the photocatalytic degradation of pollutants.

The composites were deposited on glass substrates by casting or spin coating from TiO₂–PVDF suspensions in dimethylformamide (DMF). XPS data on the TiO₂–PVDF surface composition were used to optimize preparation conditions (composition of the TiO₂/PVDF suspension, deposition technique) in terms of titanium dioxide surface amount and film stability.

The use of spin-coating deposition and the increase of TiO₂ amount in the DMF suspensions were found to improve the titanium surface content, although high TiO₂/PVDF ratios led to film instability. PVDF–TiO₂ films were also used in preliminary photocatalytic degradation tests on isoproturon, a phenylurea herbicide, under solar UV irradiation; the results were compared to direct photolysis to evaluate the catalytic efficiency of immobilized TiO₂ and the role played by the PVDF film during the degradation process.     

Cluster and periodic DFT calculations of adsorption and activation of CO2 on the Cu(hkl) surfaces

The adsorption behavior and thermal activation of carbon dioxide on the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces have been investigated by means of density functional theory calculations and cluster models and periodic slabs. According to the cluster models, the optimized results indicate that the basis set of C and O atoms has a distinct effect on the adsorption energy, but an indistinct one on the equilibrium geometry. For the CO₂/Cu(hkl) adsorption systems studied here, the final structure of adsorbed CO₂ is near linear and the preferred modes for the adsorption of CO₂ onto the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces are the side-on adsorption at the cross bridge site with an adsorption energy of 13.06 kJ/mol, the side-on adsorption at the short bridge site (13.54 kJ/mol), and the end-on adsorption on the on-top site with C–O bonds located along the short bridge site (26.01 kJ/mol), respectively. However, the calculated adsorption energies from periodic slabs are lower as compared to the experimental data as well as the cluster model data, indicating that the periodic slab approach of generalized gradient approximation in the density function theory may be not suitable to obtain quantitative information on the interaction of CO₂ with Cu(hkl) surfaces.     

Sonochemical and visible light induced photochemical and sonophotochemical degradation of dyes catalyzed by recoverable vanadium-containing polyphosphomolybdate immobilized on TiO2 nanoparticles

Na₅PV₂Mo₁₀O₄₀ supported on nanoporous anatase TiO₂ particles, TiO₂–PVMo, was used as an efficient photocatalyst for photocatalytic degradation of different dyes by visible light using oxygen as oxidant. This catalyst showed a good catalytic activity in the sonocatalytic and sonophotocatalytic decomposition of different dyes in aqueous solutions. The TiO₂–PVMo composite showed higher photocatalytic and sonocatalytic activity than pure polyoxometalate or pure TiO₂.     

Interdiffusion in vacuum-deposited dielectric thin films

The observation of interdiffusion imperfection in vacuum-deposited optical thin films is reported. We measured the diffusion lengths of interdiffusion in dielectric thin films of typical combinations of coating materials (TiO₂–SiO₂ and TiO₂–MgF₂) by analyzing the atomic concentration data along the depth obtained with X-ray photoelectron spectroscopy technique. The resultant diffusion lengths in the deposited layers of dielectric coating materials are not small, hence the effects of interdiffusion should be taken into account in the design of optical filters.     

New evidence for a subshell gap at N=32

An 879.9(2) keV γ-ray transition has been identified following the β decay of ⁵⁸V and assigned as the 2⁺₁→0⁺₁ transition in ⁵⁸Cr₃₄. A peak in the energies of the first excited 2⁺ states for the even–even chromium isotopes is now evident at ⁵⁶Cr₃₂, providing empirical evidence for a significant subshell gap at N=32. The appearance of this neutron subshell closure for neutron-rich nuclides may be attributed to the diminished π1f_7/2–ν1f_5/2 monopole proton–neutron interaction as protons are removed from the 1f_7/2 single-particle orbital.