Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces

We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D₂ and D₂O molecules were found to desorb from the surface. The desorption kinetics of D₂ and D₂O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D₂ desorption spectra as a function of T_s appeared to be very similar to the H-induced D₂ desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed.     

A molecular beam study of the adsorption dynamics of CO on Ru(0001), Cu(111) and a pseudomorphic Cu monolayer on Ru(0001)

We have investigated the sticking coefficient of CO on Ru(0001), a pseudomorphic Cu monolayer on Ru(0001), and a fully relaxed Cu(111) multilayer as function of kinetic energy, surface coverage, and surface temperature. At a low kinetic energy of 0.09 eV, the initial sticking coefficients, S₀, on these surfaces are determined to be 0.92, 0.96 and 0.87, respectively. In all cases, a decrease of S₀ with increasing beam energy was observed, yielding values of 0.58, 0.14 and 0.07, respectively, at a kinetic energy of 2.0 eV. For all three surfaces the coverage dependent sticking coefficients, S(Θ), display very characteristic behavior at low kinetic energies: S(Θ) remains more or less constant up to coverages close to saturation, indicative of precursor adsorption kinetics. However, characteristic minima at intermediate coverages are observed, which are correlated to the formation of well ordered adsorbate phases. For high kinetic energies we observe a transition towards a linear decrease of S(Θ) for Ru(0001). In contrast, for the pseudomorphic Cu monolayer and for Cu(111) we find an increase in the sticking coefficients at low coverages, followed by a decrease close to saturation. This behavior is attributed to adsorbate assisted sticking, that is, to a higher sticking coefficient on adsorbate covered regions than on the bare surface. The comparison between the pseudomorphic monolayer and Cu(111) reveals that the CO bond strength to the former is larger by 40%. The initial sticking coefficients for both surfaces are very similar at low kinetic energies; at high kinetic energies, S₀ for the pseudomorphic Cu monolayer is, however, larger by a factor of two.     

SiO production from Si(100) and (111) surfaces by reaction with O2 beams

Desorption kinetics of SiO in the reaction of O₂ with Si(100) and (111) surfaces were investigated at surface temperatures between 1000 and 1300 K by using a pulsed molecular beam technique. The gaseous SiO product was detected by a mass spectrometer above 1000 K. At temperatures lower than 1050 K, the SiO signal appeared with an induction time after the O₂ beam irradiation onto the surface, which means that the desorption occurs via sequential steps. The rate constants for two steps were obtained by a computer simulation of the relaxation waveforms of the SiO signal. The values obtained are in the same range as those of D'Evelyn et al. However, they are one order of magnitude larger than those of Yu and Eldridge. The activation energies for the two steps are 2.8 and 2.4 eV for both Si(100) and (111) surfaces. No significant difference between the two kinds of surfaces was found from these values. However, many etch pits were observed on the Si(100) surface after the reaction, while no such etch pits were formed on the Si(111) surface. The planes of the etch pits formed on the (100) surfaces consisted mostly of the {111} facets.     

Dynamic Scaling of Ramified Clusters Formed on Liquid Surfaces

A comprehensive simulation model -- deposition, diffusion, rotation, reaction and aggregation model is presented to simulate the formation processes of ramified clusters on liquid surfaces, where clusters can disuse and rotate easily. The mobility （including diffusion and rotation） of clusters is related to its mass, which is given by Dm = Dos^-γD and θm = θos^-γθ, respectively. The influence of the reaction probability on the kinetics and structure formation is included in the simulation model. We concentrate on revealing dynamic scaling during ramified cluster formation. For this purpose, the time evolution of the cluster density and the weight-average cluster size as well as the cluster-size distribution scaling function at different time are determined for various conditions. The dependence of the cluster density on the deposition flux and time-dependence of fractal dimension are also investigated. The obtained results are helpful in understanding the formation of clusters or thin film growth on liquid surfaces.     

阻变存储器复合材料界面及电极性质研究

采用基于密度泛函理论的第一性原理对比研究了Cu（111）/HfO₂（001）,Cu（111）/HfO₂（010）,Cu（111）/HfO₂（100）三种复合材料界面模型的失配率、界面束缚能、电荷密度、电子局域函数以及差分电荷密度. 计算结果表明：Cu（111）/HfO₂（010）失配率最小,界面束缚能最大,界面体系相对最稳定;对比电荷密度及电子局域函数图显示,只有HfO₂（010）方向形成的复合材料体系出现了垂直Cu电极方向完整连通的电子通道,表明电子在此方向上具有局域性、连通性,与阻变存储器（RRAM）器件导通方向一致;差分电荷密度图显示,Cu（111）/HfO₂（010）复合材料体系界面处存在电荷密度分布重叠的现象,界面处有电子的相互转移、成键的存在;进一步计算了Cu（111）/HfO₂（010）体系距离界面不同位置的间隙Cu原子形成能,表明越靠近界面Cu原子越容易进入HfO₂ 体内,在外加电压下易发生电化学反应,从而导致Cu导电细丝的形成与断裂. 研究结果可为RRAM存储器的制备及性能的提高提供理论指导和设计工具. 关键词： 阻变存储器 复合材料 界面 电子通道     

A THEORETICAL MODEL FOR H2 DISSOCIATIVE ADSORPTION ON Cu SURFACES

A theoretical model for describing H₂ dissociative chemisorption on Cu surfaces is proposed. The sticking probability S is calculated as a function of vibrational state, average kinetic energy and incident angle of hydrogen molecular beam. Within the theoretical frame of this model, the different contributions to S from H₂(v = 0) and H₂(v = 1) can be clearly distinguished. The calculated results indicate that vibrational energy significantly promotes the chemisorption of H₂ on Cu surfaces in the region of low translational energy. The equations derived can be used to analyze the experimental data for both pure and seeded molecular beams.     

Physisorption energies: influence of surface structure

The crystal-face dependence of the physisorption energies for H₂ and D₂ interacting with low-index faces of Al and Cu has been measured. The effect is pronounced for Al. The data show that the (111) and (110) faces of Al display similar potential well depths, larger by 40% than the well depth for the intermediate (100) face. We discuss this surprising result in the light of conventional theoretical models and show, in particular, that these fail to take account of important non-asymptotic effects in the face-dependent electron density profiles.     

Hyperfine Constants for Low-Lying States in ^137Ba^＋

Relativistic many-body perturbation calculation is applied to calculate the hyperfine constants for the lowlying states 6S1/2, 6P1/2, 6P3/2, 5D3/2, and 5D5/2 in the alkaline earth ion ^137Ba^＋. The zeroth-order hyperfine constants are calculated with Dirac-Fock wave functions, and the finite basis sets of the Dirac-Fock equation are constructed by B splines. With the finite basis sets, the core polarization and the correlation effect are calculated. The final results for magnetic dipole hyperfine a constants are obtained.     

The role of excitons and substrate temperature in low-energy (5–50 eV) electron-stimulated dissociation of amorphous D2O ice

We have studied the interaction of low-energy (5–50 eV) electrons with nanoscale (10 ML) ice films by probing the yields and quantum-state distributions of the neutral dissociation products using laser resonance-enhanced multiphoton ionization spectroscopy. In particular, we have observed the electron-stimulated desorption (ESD) of D (²S), O (³P₂) and O (¹D₂) from amorphous D₂O films. These products are observed at threshold energies (relative to the vacuum level) between 6.5–7 eV and desorb with low kinetic energies (60–85 meV) which are independent of the incident electron energy. We associate the ESD of atomic fragments from ice with dissociation of Frenkel-type excitons of 4a₁ character which are near the bottom of the ice conduction band. These excitons are created either directly or via electron-ion recombination. Changing the surface temperature from 88 to 145 K results in an increase in the thermal component of the time-of-flight (kinetic energy) distributions and an overall increase in the neutral fragment yield. We suggest that the change in neutral yield with substrate temperature results from a combination of: (1) increased electron-ion recombination; (2) exciton transport to the near-surface region; and (3) dissociation followed by inelastic scattering and desorption.     

The effect of a nitrogen-rich surface layer on the sub-surface deuterium (hydrogen) concentration distribution in titanium

Deuterium and nitrogen depth profiles in Ti with modified surfaces have been measured with Auger electron spectroscopy, secondary ion mass spectroscopy, and D(³He,p)⁴He nuclear reaction analysis. Nitrogen-rich surfaces layers of varying thicknesses were created on Ti by exposure to N₂ gas at 650°C. Deuterium loading was performed by exposure to 1 Torr of D₂ gas at 500°C. The deuterium distribution was influenced by nitrogen in the near-surface regions of all samples. Specifically, deuterium solubility was suppressed in surface regions of high (greater than 1%) nitrogen concentration. The deuterium solubility also remained low within the first few microns, well beyond the region of high nitrogen concentration. This effect is attributed to internal elastic stresses imposed by the non-deuterium absorbing nitrogen-rich layer on the Ti. These stresses prohibit the volume expansion associated with deuterium absorption. We estimate stresses on the order of 3–4 GPa are required to suppress the deuterium solubility to the values observed. The deuterium absorption kinetics were observed to depend systematically on the thickness of the nitrogen-rich layer. This is consistent with limited solubility near the surface or a surface poisoning effect influencing the overall deuterium diffusion from the gas phase into the Ti bulk.     

Chlorine/silicon surface reactions under heating

Reactions on Cl-adsorbed Si(111) and Si(100) surfaces—(Cl/Si(111) and Cl/Si(100))—under heating in ultrahigh vacuum (UHV) and in a Cl₂ atmosphere were studied. Auger electron spectroscopy (AES) and low-energy electron energy loss spectroscopy (LEELS) were used for examination of surface changes. Heating in UHV at 820°C for 30 s successfully removed almost all Cl atoms, both on Cl/Si(111) and Cl/Si(100). Variance in LEELS spectra shows that decomposition of SiCl_x (x > 1), a small amount of which was present on Cl/Si(111), occurs under heating on Si(111) both in UHV and in Cl₂ and desorbs reaction products, leaving the Si---Cl bonds on the surfaces. Such Si---Cl bonds specific to those on Cl/Si(111) are formed also on Cl/Si(100) heated in C1₂ at 820°C. On Cl/Si(100) heated in C1₂, there are various surface changes: relaxation of the 2 × 1 structure remaining on the Cl/Si(100), desorption of reaction products, and formation of Si---Cl bonds specific to those on Cl/Si(111). The Si---Cl bonds, both on Cl/Si(111) and Cl/Si(100), decomposed under longer heating and under heating at higher temperatures in UHV.     

The interaction of D2O with Zr(0001) at 80 K

The adsorption of D₂O on Zr(0001) at 80 K and its subsequent reactions at higher temperatures have been studied by thermal desorption spectroscopy (TDS), work-function measurements (Δф), nuclear reaction analysis (NRA), LEED, infrared reflection spectroscopy (FTIR-RAS), Auger electron spectroscopy (AES), and static secondary ion mass spectroscopy (SSIMS). D₂O adsorption on Zr(0001) at 80 K is accompanied by a Δф of −1.33 eV. The adsorbed D₂O can be characterized into three layers by TDS: a chemisorbed layer (up to 0.23 ML), a second adsorbed layer, and an ice layer. The chemisorbed D₂O dissociates into OD_ad and D_ad at 80 K (possibly also into O_ad) and no desorption products could be detected, implying that the reaction products dissolved into the zirconium at temperatures appropriate for each component. The ice layer and most of the second adsorbed layer desorb as molecular water during heating. The water adsorbed at 80 K did not form any long-range ordered structure, but a (2 × 2) LEED pattern that was formed by heating the sample to temperatures above 430 K is believed due to be an ordered oxygen superstructure.     

Adsorption and reaction of oxygen and deuterium on a Pd(110) surface, studied by Δφ and TDS

The co-adsorption of oxygen and deuterium at 100 K on a Pd(110) surface has been studied by measurements of the change in work function (Δφ) and by thermal desorption spectroscopy (TDS). When the surface with co-adsorbed species is heated, the adsorbates O and D react to form D₂O which desorbs from the surface at T > 200 K. The D₂O desorption peaks shift continuously to lower temperatures as the surface D coverage (θ_D) increases. The maximum production of D₂O is estimated to be 0.26 ML (1 ML = 9.5 × 10¹⁴ atoms cm⁻²), resulting from reaction in a layer containing 0.65 ML D and 0.3 ML O. The maximum work function increase caused by adsorption of D to saturation onto oxygen precovered Pd(110) decreases almost linearly with Δφ_O of the oxygen precovered surface. On a surface with pre-adsorbed D however, the maximum Δφ increase contributed by oxygen adsorption decreases abruptly at Δφ_D > 200 mV. This sharp change occurs at θ_D > 1 ML and is believed to be associated with the development of the reconstructed (1 × 2) phase of D/Pd(110).     

The interaction of Cu and S2 with aluminum and alumina surfaces: a comparative study

The bonding interactions between Cu and Al are much stronger than those between Cu and Al₂O₃. Cu atoms supported on alumina show a narrow 3d band with a centroid shifted 0.35 eV with respect to that of the 3d band in bulk metallic Cu. In contrast, Cu atoms deposited on aluminum exhibit shifts of 1.3–1.6 eV in the centroid of the 3d band. Similar differences are observed when comparing the behavior of Ag and Pt overlayers on alumina and aluminum. The d band shifts on the oxide substrate are in the order of 0.3–0.4 eV, whereas on the metal substrate they vary from 0.8 to 2.0 eV. These trends are explained in terms of a simple model that takes into account changes in the energy of the Al(3s, 3p) bands when going from metallic aluminum to alumina. The sticking coefficient of S₂ on alumina surfaces is at least one order of magnitude smaller than on aluminum, a difference that also reflects variations in the position of the Al(3s,3p) bands. Submonolayer coverages of Cu do not produce significant changes in the electronic properties of Al₂O₃. In contrast, the deposition of small amounts of sulfur (0.1 ML) induces a substantial reduction (0.4–0.5 eV) in the binding energies of the O KVV, O 1s and Al 2p features of alumina. This is consistent with a transfer of electrons from alumina into the S atoms that produces a transformation similar to a change from n-type to p-type semiconductors. The reactivity of Cu/Al₂O₃ surfaces toward sulfur is much larger than that of pure Al₂O₃ surfaces. Cu clusters supported on alumina react with S₂ to form CuS_x compounds that decompose at temperatures between 850 and 1100 K.     

在丙酮溶液中18-冠-6与CoCl2配位化合物的NMR研究

本文研究了丙酮溶液中配合物的平衡和结构。建立了一套计算机程序。通过化学位移数值的分析说明在溶液中主要存在两种平衡,并确定了平衡常数k₁₁=2.95×10²l/mol,k₁6.1l/mol以及冠醚络合物的极限化学位移D₁₁^(H)=350Hz,D₁₁^(C)=-290Hz,D₂^(H)=1300Hz,D^(C)=-1600Hz。确认位移机制是电子磁矩和共振核的核磁矩通过空间直接偶极-偶极相互作用。     

D abstraction by H at a D-saturated Ru(0 0 1) surface

D abstraction (ABS) by H at Ru(0 0 1) surfaces initially saturated with D adatoms has been investigated using in situ mass spectrometry. HD and D₂ desorption rates are measured at various surface temperatures T as a function of H exposure time. Yield of D₂ desorption increases with T, while that of HD is little affected. Analyzing the measured rate curves, HD and D₂ desorption orders are evaluated to be 1.7 ± 0.1 and 2.5 ± 0.1, respectively, with respect to D coverage θ_D. To pursue the origin of the derived non-integral reaction orders the rate curves are further analyzed with the rate equations constructed to involve several ABS channels. Consequently, we find that the HD desorption is mainly governed by a second-order rate law in θ_D rather than the conventional hot atom-mediated ABS reaction even when it is corrected to include an isotope effect on ABS. We argue that such second-order ABS kinetics becomes important when the H atoms in excited state of chemisorption have energetically relaxed to some extent, and thereby tend to reside at, e.g. hexagonal closed packed hollow sites, interacting with nearby adatoms. On the other hand, the D₂ rate curves can be fit with third-order kinetics, consistent with the Langmuir-Hinshelwood mechanism in a super-saturation state. The isotope effect plays an essential role in the ABS reaction of D abstraction by H which competes with H abstraction by H as D adatoms are replaced by H atoms.     

Direct reaction of adsorbed molecular oxygen with hydrazine on a clean Pt(111) surface

The oxidation of hydrazine on the clean Pt(111) surface has been investigated by temperature-programmed reaction spectroscopy (TPRS) in the temperature range 130–800 K. Direct reaction of molecular oxygen is observed on the Pt(111) surface for the first time, as indicated by the desorption of nitrogen beginning at 130 K with a maximum rate at 145 K, below the molecular oxygen dissociation temperature. Direct reaction of hydrazine with adsorbed molecular oxygen results in the formation of water and nitrogen. With excess hydrazine, all surface oxygen is reacted, forming water. When only adsorbed atomic oxygen is present, the low-temperature nitrogen yield decreases by a factor of 3 and the peak nitrogen desorption temperature increases to 170 K. No high-temperature (450–650 K) nitrogen desorption characteristic of nitrogen atom recombination is seen, indicating that during oxidation the nitrogen-nitrogen bond in hydrazine remains intact, as observed previously for hydrazine decomposition on the Pt(111) surface and hydrazine oxidation on rhodium. Two water desorption peaks are observed, characteristic of desorption-limited (175 K) and reaction-limited (200 K) water evolution from the Pt(111) surface. For low coverages of hydrazine, only the reaction-limited water desorption is observed, previously attributed to water formed from adsorbed hydroxyl groups. When excess hydrazine is adsorbed, the usual hydrazine decomposition products, H₂, N₂ and NH₃, are also observed. No nitrogen oxide species (NO, NO₂ and N₂O) were observed in these experiments, even when excess oxygen was available on the surface.     

The synthesis of methanol and the reverse water-gas shift reaction over Zn-deposited Cu(100) and Cu(110) surfaces: comparison with Zn/Cu(111)

The catalytic activity of Zn vapor-deposited Cu(100) and Cu(110) surfaces for methanol synthesis by the hydrogenation of CO₂ and the reverse water-gas shift reaction were studied using an XPS apparatus combined with a high-pressure flow reactor (18 atm). At a reaction temperature of 523 K, no promotional effect of Zn was observed for the methanol synthesis on both Zn/Cu(100) and Zn/Cu(110). The results were quite different from those for Zn/Cu(111), on which a significant promotion of methanol synthesis activity appeared to be due to the deposition of Zn, indicating that the promotional effect of Zn was sensitive to the surface structure of Cu. However, hysteresis was observed in the catalytic activity for methanol synthesis over the Zn/Cu(110) surface upon heating above 543 K in the reaction mixture. The activity became twice that measured before heating, which was close to the methanol synthesis activity of Zn/Cu(111) at the same Zn coverage. On the other hand, no such hysteresis was observed for the reverse water-gas shift reaction on Zn/Cu(110), indicating that the active site for methanol synthesis was not identical to that for the reverse water-gas shift reaction. In the post-reaction surface analysis, formate species was detected on both Zn/Cu(100) and Zn/Cu(110), whose coverage increased with increasing Zn coverage at 0<Θ_Zn<0.2. No correlation between the formate coverage and the methanol synthesis activity was obtained, which was in contrast to the results for Zn/Cu(111). Thus, the structure sensitivity observed in the catalytic activity of methanol synthesis over Zn-deposited Cu surfaces is ascribed to the significant difference in the reactivity of the formate intermediate.     

Time-of-flight distributions of HD molecules abstracted at a Si(1 0 0) surface

We study the dynamics of D abstraction by 0.05 eV H atoms on a Si(1 0 0) surface. Time-of-flight (TOF) distributions of the abstracted HD molecules are measured using a quasi-random chopper/cross-correlation method. The measured TOF distribution is found to be broad and fast. The distribution is decomposed into two components being related to direct abstraction (ABS) and adsorption-induced-desorption (AID), which were revealed in the kinetics studies. The best curve fits yield mean kinetic energies of 1.15 ± 0.20 eV and 0.33 ± 0.05 eV for the ABS and AID components, respectively. Dynamics and kinetics of hydrogen abstraction at Si(1 0 0) surfaces are consistently understood.     

C36团簇生长动力学及自由能

在2300 K的气相条件下,采用经典分子动力学方法对C₃₆团簇的生长过程进行模拟,并计算生长过程中出现的势能最低的20个异构体的相对概率.计算结果表明:团簇系统在100 ns左右达到动态平衡,出现概率最大的异构体是_2d而不是势能最低的D_6h.对于某些势能和自由能均较高的碗状异构体,在生长过程中以一定概率出现,其出现概率甚至高于某些经典构型.