Pb(Zr,Sn,Ti)O3反铁电陶瓷的低温相变扩散与极化弛豫

用弱场介电温谱、热释电流谱、强场电滞回线和变温X射线衍射谱研究了微量La掺杂Pb(Zr ,Sn ,Ti)O3(PZST)反铁电 (AFEt)陶瓷在 - 10 0— 180℃温区内的结构与电学特性 .弱场介电温谱显示 ,AFEt陶瓷在低温段(- 10 0— 5 0℃ )呈现介电频率弥散 (0 1— 10 0kHz)和扩散型相变的特征 ,而变温X射线衍射谱却表明材料在这一温区内保持四方相结构 ;低温下经强场作用后 ,AFEt被诱导为亚稳三方铁电态 ,介电频率弥散消失 .基于多元复杂化合物的组分起伏理论 ,讨论了PZSTAFEt陶瓷的相变扩散与极化弛豫新现象 .     

Pb(Zr,Sn,Ti)O_3反铁电陶瓷场诱相变性能的改进

为了获得场诱反铁电 (AFEt)—铁电 (FER)相变临界电场Ef 小、电滞ΔE小、场致应变x适当的反铁电陶瓷 ,对Pb(Zr ,Sn ,Ti)O3 采用Ba2 置换Pb2 ,同时在四方反铁电相AFEt—三方铁电FER 相界附近调节Ti/Sn比 ,来控制FER AFEt,AFEt 顺电相 (FEC)之间的相变温度TFA,TC,最终实现了对场诱相变参量 (Ef,ΔE)和反铁电工作温区 (ΔT =TC-TFA)的优化与调节 .获得了ΔE =0 85kV/mm ,Ef=1 6kV/mm ,x =0 1% - 0 2 %可用作开关致动器的新型反铁电陶瓷 .借助于X射线衍射、介电温谱、去极化电流谱、电滞回线等手段得到了这一系统AFEt/FER相界附近的温度 Ti含量相图 .     

Pb(Zr,Sn,Ti)O3反铁电陶瓷场诱相变性能的改进

为了获得场诱反铁电(AFE_t)—铁电(FE_Ｒ)相变临界电场E_{f小、电滞ΔE小、场致应变x适当的反铁电陶瓷,对Pb(Zr, Sn, Ti)O3采用Ba ^2＋置换Pb^2＋,同时在四方反铁电相AFEt—三方铁电F EＲ相界附近调节Ti/Sn比,来控制FEＲ-AFEt,AFEt关键词： Pb(Zr Sn 3基反铁电陶瓷')" href="#">Ti)O3基反铁电陶瓷 场诱相变 场致应变 掺杂改性}     

La诱导(Pb(1-3x/2)Lax)(Zr0.5Sn0.3Ti0.2)O3反铁电介电弛豫研究

采用标准电子陶瓷工艺制备了(Pb_(1-3x/2)La_x)(Zr_0.5Sn_0.3Ti_0.2)O₃(PLZST,0.00≤x≤0.18)反铁电陶瓷,利用X射线衍射、不同频率下弱场介电温谱、强场下的极化强度-电场(P-E)测试研究了材料相结构和电学性能.实验结果发现,随La含量x增大,室温下材料由铁电三方相(关键词： 反铁电陶瓷 介电频率色散 相变弥散 介电弛豫     

等静压和温度诱导的PbLa(Zr,Sn,Ti)O3反铁电陶瓷相变和介电性能研究

研究了等静压和温度诱导掺镧La的Pb(Zr,Sn,Ti)O₃(PLZST)陶瓷材料的铁电反铁电相变、介电压力谱和介电温度谱,研究了温度对压致相变和介电压力谱的影响,结果发现温度使铁电反铁电相变压力降低,介电压力谱具有明显的扩散相变和频率弥散的特点;研究了等静压对介电温度谱的影响,结果表明等静压使铁电反铁电相变温度降低,反铁电顺电相变温度升高.这些现象有利于丰富和拓宽人们对温度和压力诱导的多组元弛豫型铁电体和弛豫型反铁电体扩散相变和弛豫行为的认识和理解. 关键词： 等静压和压致相变 铁电反铁电相变 介电压力谱 介电温度谱     

(Pb0.97La0.02)(Zr0.65Sn0.35-xTi x)O3反铁电陶瓷的热膨胀性质

在-100—200℃温度范围内，测量了(Pb_0.97La_0.02)(Zr_{0.65< /sub>Sn0.35-xTix)O3(PZST，0.1≤x≤0.14)反铁电陶 瓷的热膨胀性质.实验结果表明，组分在0.1 ≤x≤0.12的试样室温下为反铁电(AFEt)四方相，热膨胀系数(α)在低温段发生 “弯曲” ，而变温x射线衍射谱(XRD)显示材料保持四方相结构；当Ti含量在0.125≤x≤0.14时，室温 下是铁电三方相(FER)，温度升高时FER→AFEt相变体 积收缩，AFEt→立方顺电(PE c)相变体积增大；变温XRD谱证明了材料相结构随温度的转变过程.用多元复杂 化合物存在 纳米线度组分非均匀的观点解释了热膨胀性质随Ti含量演化的物理机理，并得到了该系统的 温度-Ti(x)含量相图. 关键词： 热膨胀性质 铁电/反铁电相界 反铁电陶瓷 PZST}     

La调节Pb(Zr,Sn,Ti)O_3反铁电陶瓷的相变与电学性质

利用X射线衍射、弱场介电温度谱、强场极化强度研究了不同La含量(Pb1-xLa2x3)(Zr06Sn03Ti01)O3(000≤x≤012)(PLZSnT)陶瓷的相变与电学特性.实验发现,随La含量增大,室温下材料由铁电三方相(x=000)转变为反铁电四方相(003≤x≤009)和立方相(x=012).介电测试表明,La含量增大,反铁电→顺电相变温度降低,峰值介电常量减小.在x=006的PLZSnT三元相图中,反铁电四方相区扩大到Ti含量约为18at%,该系统反铁电陶瓷具有“窄、斜”型双电滞回线和“三电滞回线”;在高Zr、高Sn区,反铁电→顺电相变呈现弥散相变和介电频率色散特征,即反铁电极化弛豫现象.从ABO3钙钛矿结构的容忍因子(t)和反铁电相的结构特征出发,讨论了La对Pb(Zr,Sn,Ti)O3相变与电学性质的影响机理 关键词： 场诱相变 弛豫型反铁电体 介电性能 La调节Pb(Zr Sn Ti)O3     

脉冲电容器用细电滞回线铁电陶瓷材料的研究

采用低锆区的Pb(Zr_0.42Sn_0.40Ti_0.18)O₃(PZST42/40/18)铁电陶瓷为基, 通过少量La和Ba取代Pb同时Nb取代(Zr, Sn, Ti)复合取代的方法得到掺杂PZST42/40/18细电滞回线铁电陶瓷, 其最大极化强度P_max≈20.66μC/cm², 剩余极化强度P_r≈0.55μC/cm^{关键词： 细电滞回线 铁电陶瓷 PZST 脉冲电容器}     

PLZST反铁电陶瓷电场诱导相变与相稳定性的研究

在三方铁电(FE)-四方反铁(AFE)的准同型相界附近制备了一系列组份为(Pb_0.97La_0.02)(Zr_1-x-ySn_yTi_x)O₃(x=0.09或0.1;0.16≤y≤0.38)的反铁电陶瓷.研究了Sn含量y对电场诱导AFE→FE相变电场E_c、反铁电双电滞回线损耗ΔE、以及温度诱导FE→AFE相变温度T_FE，AFE→顺电(PE)相变温度T_c的影响.沿AFE-FE相界Ti含量一定的条件下，E_c随着Sn含量y的增加而增大，ΔE减小，T_FE与T_c均降低.场诱相变的回线参量E_c，ΔE与相变温度T_FE和T_c相关联.在直流偏压下用原位X-射线衍射表征了相变时晶格结构的变化，结果表明，当电场达到AFE→FE相变临界场时，伴随相变的发生，晶格结构由四方相转变为三方相，晶胞体积增大. 关键词：     

(Pb0.97La0.02)(Zr0.65Sn0.35-xTix)O3反铁电陶瓷的热膨胀性质

在-100～200℃温度范围内，测量了(Pb0．97La0．02)(Zr0．65Sn0．35-xTix)O3(PZST，0．1≤x≤0．14)反铁电陶瓷的热膨胀性质．实验结果表明，组分在0．1≤x≤0．12的试样室温下为反铁电(AFE1)四方相，热膨胀系数(α)在低温段发生“弯曲”，而变温x射线衍射谱(XRD)显示材料保持四方相结构；当Ti含量在0．125≤x≤0．14时，室温下是铁电三方相(FER)，温度升高时FER→AEE1相变体积收缩，AEE1→立方顺电(PEc)相变体积增大；变温XRD谱证明了材料相结构随温度的转变过程．用多元复杂化合物存在纳米线度组分非均匀的观点解释了热膨胀性质随Ti含量演化的物理机理，并得到了该系统的温度-Ti(x)含量相图．     

Electromechanical-induced antiferroelectricben ferroelectric phase transition in PbLa(Zr,Sn,Ti)O3 ceramic

Antiferroelectric—ferroelectric (AFE—FE) phase transition in ceramic Pb_0.97La_0.02(Zr_0.75Sn_0.136Ti_0.114)O₃ (PLZST) was studied by dielectric spectroscopy as functions of frequency (10²—10⁵ Hz) and pressure (0—500 MPa) under a DC electric field. The hydrostatic pressure-dependent remnant polarization and dielectric constant were measured. The results show that remnant polarization of the metastable rhombohedral ferroelectric PLZST poled ceramic decreases sharply and depoles completely at phase transition under hydrostatic pressure. The dielectric constant undergoes an abrupt jump twice during a load and unload cycle under an electric field. The two abrupt jumps correspond to two phase transitions, FE—AFE and AFE—FE.     

Release of charges under external fields of PbLa（Zr,Sn,Ti）O3 ceramic

This paper investigates the pyroelectric of poled antiferroelectric (AFE) ceramic Pb 0.97 La 0.02 (Zr 0.69 Sn 0.196 Ti 0.114)O 3 and its remnant polarization dependence of hydrostatic pressure.The results show that the bound charges of poled sample can be released in short time by temperature field or pressure field.The released charge abruptly forms a large pulse current.The phenomena of released charge under external fields result in the ferroelectric-AFE phase transition induced by temperature or hydrostatic pressure.     

等静压诱导的PbLa(Zr,Sn,Ti)O3陶瓷铁电-反铁电相变性能研究

 研究了等静压诱导掺镧La的Pb(Zr,Sn ,Ti)O₃（PLZST）陶瓷材料的铁电-反铁电相变和介电压谱,结果发现介电压谱具有明显的扩散相变和频率弥散的特点,这一现象有利于拓宽人们对压力诱导的多组元弛豫型铁电体的扩散相变行为的认识和理解。     

直流偏压对压力诱导反铁电陶瓷去极化性能的影响

采用掺铌的锆钛锡酸铅（PNZST）反铁电陶瓷作为研究对象,研究了不同的直流电场作用下,等静压力诱导极化态反铁电陶瓷发生去极化过程（同时发生铁电/反铁电相变）的规律.当极化态样品两端电场强度为6 kV/cm时,去极化压力为128.8 MPa;当极化态样品两端电场强度为-6 kV/cm时,去极化压力为74.2 MPa.在与极化电场方向相反的外加电场作用下极化态样品具有较小的去极化压力.讨论了外加直流电场影响极化态反铁电陶瓷去极化压力的内在机理.得到了不同外置电场下的去极化压力,并绘制了该材料的外加直流电场（< 关键词： 去极化 反铁电体 相变     

Dielectric properties and phase transitions of (Pb0.87La0.02Ba0.1)(Zr0.6Sn0.4−xTix)O3 ceramics with compositions near AFE/RFE phase boundary

The electrical properties and phase transition behavior of (Pb_0.87La_0.02Ba_0.1)(Zr_0.6Sn_0.4−xTi_x)O₃ solid solutions (PLBZST, 0.04≤x0.2) were investigated by the X-ray diffraction, permittivity, pyroelectric current, and P-E electric hysterisis loops. As the composition x increased from 0.04 to 0.2, the antiferroelectric ceramics (x≤0.07, AFE) with tetragonal phase changed to the ferroelectric relaxors (RFE, 0.09≤x). AFE ceramics showed a peculiar diffuse phase transition and dielectric relaxation at the low temperature (down to −100 °C) due to a frustration between AFE and FE state. With an increase in composition x, electrically field-induced AFE-FE switching field (E_AFE-FE) and AFE-paraelectric (PE) phase transition temperature (T_c) are depressed in the temperature (T)-Ti composition (x) phase diagram, a FE-AFE-PE triple phase point (T_tr) with the lowest transition temperature occurred at x=0.09. The pyroelectric currents under an application of various external electric field (E) were measured to identify a T-E phase diagram of the PLBZST compound.     

Dielectric properties of LC mixture with induced antiferroelectric phase

Mixture of two liquid crystalline components exhibits the antiferroelectric phase in a broad temperature range at room temperatures, though the two components separately do not show an antiferroelectric phase in a temperature range applied. The dielectric spectroscopy technique combined with measurements of the selective light reflection was used for identification and characterization of the phases and subphases existing in the mixture. In the SmC*_A phase, the low frequency mode characteristic of antiferroelectric phase has been detected. In the broad temperature range between SmC*_A and SmA* phases, no relaxation mode has been detected. The soft mode registered near the phase transition to SmA* phase follows the Curie-Weiss law.     

Large pyroelectric response in (Pb0.87La0.02Ba0.1)(Zr0.7Sn0.3−x Ti x )O3 antiferroelectric ceramics under DC bias field

(Pb_0.87La_0.02Ba_0.1)(Zr_0.7Sn_0.3−x Ti _x )O₃ (PLBZST, 0.06≤x≤0.09) antiferroelectric ceramics were fabricated by conventional solid state reaction process, and their ferroelectric, dielectric, and pyroelectric properties were systemically investigated. PLBZST with different Ti content were all confirmed to be in an antiferroelectric phase at T=50°C, which is close to the lowest phase transition temperature. Compared with conventional FE ceramics, PLBZST antiferroelectric ceramics exhibited higher electric field induced pyroelectric coefficient (p). As the content of Ti increased from 0.06 to 0.09, the pyroelectric coefficient increased from 1000 to 6500 μC/m²K under a 500 V/mm DC bias field. The maximum pyroelectric coefficient of 8400 μC/m²K was obtained at x=0.09 when an 850 V/mm DC bias field was applied, which is far larger than that of conventional phase transition pyroelectric materials. Large pyroelectric response is beneficial for the development of infrared detectors and thermal imaging sensors.