GaN基多量子阱蓝光LED的γ辐照效应

本文用4×104Ci(1Ci=3.7×1010Bq)的60Co源(剂量率2×105rad(Si)/h)对GaN基InGaN/GaN多量子阱蓝光LED进行5种剂量的γ射线的辐照实验.通过辐照前后蓝光LED的波长、色纯度、最大半峰宽(FWHM)和电流-电压(I-V)、电流-光通量(I-F)等电光学特性分析,得到γ射线对GaN基LED器件的辐照效应.结果发现,辐照后LED器件的发光一致性和均匀性变差,在20mA工作电流下,最大剂量下器件发光强度衰减近90%,光通量衰减约40%,并得到器件的抗辐照能力的参数τ0Kγ为4.039×10-7rad.s-1,发现较低的正向偏压下(小于2.6V)器件的饱和电流随辐照总剂量增大而增大.     

氢化作用对低能电子束辐照下GaN发光演变的影响

结合氢在GaN中的扩散特性，运用阴极荧光（CL）谱，对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现，氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势，而氢化后带边发射强度先上升后衰减，而且氢化后的衰减比氢化前弱.1 h辐照过程中，氢化后GaN带边发光强度的变化比氢化前要小很多.另外，实验中发现经过氢化处理的GaN在辐照后20 h内没有观察到带边发射强度的恢复.研究表明氢原子在GaN中可以钝化缺陷来增强发光，但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现，而低能电子束可以 关键词： 阴极荧光 低能电子束 氢化 演变     

SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响

为了提高氮化镓(GaN)基发光二极管(LEDs)的发光性能,采用等离子体增强化学气相沉积(PECVD)在蓝宝石衬底上沉积SiO_2薄膜,经过光刻和干法刻蚀技术制备了SiO_2图形化蓝宝石衬底(SiO_2 patterned sapphire substrate, SPSS),利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能,重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明,与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate, CPSS)相比,SPSS上生长的GaN外延层位错密度较低,晶体质量较高,SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。     

3 MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响

研究了AlGaN/GaN 高电子迁移率晶体管(HEMT)的质子辐照效应. 在3 MeV质子辐照下, 当辐照剂量达到1× 10¹⁵ protons/cm²时, 漏极饱和电流下降了20%, 最大跨导降低了5%. 随着剂量增加, 阈值电压向正向漂移, 栅泄露电流增加. 在相同辐照剂量下, 1.8 MeV质子辐照要比3 MeV质子辐照退化严重. 从SRIM软件仿真中得到不同能量质子在AlGaN/GaN异质结中的辐射损伤区, 以及在一定深度形成的空位密度. 结合变频C-V测试结果进行分析, 表明了质子辐照引入空位缺陷可能是AlGaN/GaN HEMT器件电学特性退化的主要原因.     

电子束辐照剂量对PAN/PEO交联度的影响

对PAN/PEO凝胶(5%PAN,5%PEO)在1.0 MeV电子束下进行了不同剂量的辐照。红外光谱测量表明,PAN/PEO凝胶辐照后发生了化学交联。分析结果指出,PAN/PEO的凝胶分数随着辐照剂量的增加而不断增加;其凝胶分数增长率的变化可以分为3个阶段,即快速增加阶段(0~39kGy)、下降阶段(39~130 kGy)和稳定阶段(130 kGy)。拟合发现,引入材料刚性参数β的半经验修正方程与未考虑材料刚性的Char1esby-Pinner方程相比,更符合实际测量值(对于该配比PAN/PEO,β为0.166)。交联度-辐照剂量曲线显示,交联度随辐照剂量的增加而增加,为设计新型能功能材料中所需的固定交联度的PAN/PEO凝胶提供了辐照剂量参考值。     

大功率全方位反射镜发光二极管性能研究

在现有工艺条件下通过简单工艺实现大功率GaN基多量子阱全方位反射镜(ODR)发光二极管(LED)的研制,并对试制LED样品进行了光学、电学和色参数三个方面性能测试.测试结果发现,ODR芯片比普通芯片的光强提高了244 mcd,极大提高了发光强度;ODR LED光通量、光效、色纯度比普通LED分别提高了6.04%,5.74%,78.64%.ODR LED具有绝对优势是其色温要比普通LED的色温低1804 K,明显改善大功率LED的色温缺陷. 关键词： 发光二极管 ODR 色温     

GaN厚膜中的质子辐照诱生缺陷研究

本文采用正电子湮没谱研究质子辐照诱生缺陷, 实验发现: 能量为5 MeV的质子辐照在GaN厚膜中主要产生的是Ga单空位, 没有双空位或者空位团形成; 在10 K测试的低温光致发光谱中, 带边峰出现了"蓝移", 辐照后黄光带的发光强度减弱, 说明黄光带的起源与Ga空位(V_Ga)之间不存在必然的联系, 各激子发光峰位置没有改变, 仅强度随质子注量发生变化; 样品(0002)面双晶XRD扫描曲线的半峰宽在辐照后明显增大, 说明质子辐照对晶格的周期性产生了影响, 薄膜晶体质量下降. 关键词： GaN 缺陷 质子 辐照     

增强型Cascode结构氮化镓功率器件的高能质子辐射效应研究

针对增强型共栅共源(Cascode)级联结构和耗尽型AlGaN/GaN功率器件,利用60 MeV能量质子开展辐射效应研究.获得了经质子辐照后器件电学性能的退化规律,并与常规耗尽型HEMTs器件辐照后的电学性能进行了比较,发现增强型Cascode结构器件对质子辐照更加敏感,分析认为级联硅基MOS管的存在是其对质子辐照敏感的主要原因.质子辐照使硅基MOS管栅氧化层产生大量净的正电荷,诱导发生电离损伤效应,使其出现阈值电压负向漂移及栅泄漏电流增大等现象.利用等效(60 MeV能量质子,累积注量1×10¹² p/cm²)剂量的⁶⁰Co γ射线辐射器件得到电离损伤效应结果,发现器件的电学性能退化规律与60 MeV能量质子辐照后的退化规律一致.通过蒙特卡罗模拟得到质子入射在Cascode型器件内诱导产生的电离能损和非电离能损,模拟结果表明电离能损是导致器件性能退化的主要原因.     

In_(0.22)Ga_(0.78)As/GaAs量子阱光致发光谱电子辐照效应研究

对未掺杂的In_(0.22)Ga_(0.78)As/GaAs量子阱材料开展了能量为1 MeV、电子注量达1×1016/cm~2的电子束辐照实验。实验结果显示,电子束轰击量子阱材料,通过能量传递在材料中引入缺陷,导致光致发光减弱;电子束辐照后的量子阱中同时存在应力释放和原子互混现象,导致量子阱的发光峰先红移后蓝移;辐照后的量子阱发光波长取决于应变弛豫和扩散的共同作用。     

电子束辐照烟气脱硫脱氮反应器中的剂量分布的模拟计算

采用Monte-Carlo程序EGSnrcMP对能量为0.8MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,将计算的结果运用MATLAB数学分析软件进行了数据处理,对能量为0.5MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,并与文献中实验测量值进行了比较。结果表明:采用EGSnrcMP程序计算所得到的剂量与实验结果吻合。     

Increased porous morphology and thermal degradation of electron beam-irradiated PVDF-HFP/LiCLO4 polymer electrolyte

The effect of 8?MeV energy electron beam radiation at 40, 80 and 120?kGy dosage on surface morphology and thermal properties of lithium perchlorate-doped poly (vinylidene fluoride-co-hexafluoropropylene) polymer electrolyte films have been studied. The field emission scanning electron microscopic image shows small-porous structured morphology for unirradiated film, but it changed drastically into large and deep porous structure as well as the size of spherulites is reduced for 120?kGy confirming the influence of irradiation on morphology. The atomic force microscope reveals the significantly changed surface roughness of unirradiated film from 116.8 to 123.4?nm with a hill-like pattern morphology for 120?kGy confirming the increased amorphousity after irradiation. The thermal study confirmed that the decrease in the melting point of unirradiated film 160.86–155.24°C for 120?kGy doses is attributed to the formation of defects by the chain scissioning process resulting in the degradation of polymer electrolytes at high dose.     

Effect of electron beam on structural,linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.     

Electron-beam irradiation effects on poly(ethylene-co-vinyl acetate) polymer

Poly(ethylene-co-vinyl acetate) (EVA) films were irradiated with a 1.2 MeV electron beam at varied doses over the range 0–270 kGy in order to investigate the modifications induced in its optical, electrical and thermal properties. It was observed that optical band gap and activation energy of EVA films decreased upon electron irradiation, whereas the transition dipole moment, oscillator strength and number of carbon atoms per cluster were found to increase upon irradiation. Further, the dielectric constant, the dielectric loss, and the ac conductivity of EVA films were found to increase with an increase in the dose of electron radiation. The result further showed that the thermal stability of EVA film samples increased upon electron irradiation.     

Temperature and 8 MeV electron irradiation effects on GaAs solar cells

GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper, the results of the studies carried out on the effect of 8 MeV electron irradiation on the electrical properties of GaAs solar cells are presented. The I–V (current-voltage) characteristics of the cells under dark and AM1.5 illumination condition are studied and 8 MeV electron irradiation was carried out on the cells where they were exposed to graded doses of electrons from 1 to 100 kGy. The devices were also characterized using capacitance measurements at various frequencies before and after irradiation. The effect of electron irradiation on the solar cell parameters was studied. It is found that only small changes were observed in the GaAs solar cell parameters up to an electron dose of 100 kGy, exhibiting good tolerance for electrons of 8 MeV energy.     

Influence of electron irradiation on properties of semi-insulating GaAs detectors

The effects of electron beam irradiation on electrical and spectrometric properties of semi-insulating (SI) GaAs detectors were studied. The electric properties were monitored by reverse and forward current–voltage characteristics. In general, a breakdown voltage decrease with the dose was observed. However, some samples showed a local increase in the breakdown voltage at doses between 5 and 10?kGy. The detector spectrometric properties (the charge collection efficiency (CCE), the energy resolution and the detection efficiency) were evaluated from measured spectra of the ²⁴¹Am radionuclide gamma source before and after electron irradiation. The CCE and energy resolution showed minor changes after irradiation. The detection efficiency noticed an initial increase (up to a dose of 5?kGy) followed by a permanent decrease. At 30?kGy, the overall degradation of detector functionality was observed with all samples.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

Effect of electron beam irradiation on the structural,thermal and optical properties of poly(vinyl alcohol) thin film

Poly(vinyl alcohol) (PVA) polymer was prepared using the casting technique. The obtained PVA thin films have been irradiated with electron beam doses ranging from 20 to 300 kGy. The resultant effect of electron beam irradiation on the structural properties of PVA has been investigated using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR), while the thermal properties have been investigated using thermo-gravimetric analysis and differential thermal analysis (DTA). The onset temperature of decomposition T ₀ and activation energy of thermal decomposition E _a were calculated, results indicate that the PVA thin film decomposes in one main weight loss stage. Also, the electron beam irradiation in dose range 95–210 kGy led to a more compact structure of the PVA polymer, which resulted in an improvement in its thermal stability with an increase in the activation energy of thermal decomposition. The variation of transition temperatures with electron beam dose has been determined using DTA. The PVA thermograms were characterized by the appearance of an endothermic peak due to melting. In addition, the transmission of the PVA samples and any color changes were studied. The color intensity Δ E was greatly increased with increasing electron beam dose, and was accompanied by a significant increase in the blue color component.     

Study of the effect of irradiation with the SEM electron beam on cathodoluminescence and the induced current in InGaN/GaN structures with multiple quantum wells

The effect of irradiation with low-energy electrons on the optical and electric properties of InGaN/GaN-based LED structures with multiple quantum wells is studied using the methods of cathodoluminescence (CL) and electron-beam induced current (EBIC). It is shown that such irradiation leads to a change in both the electric and optical properties of these structures. The fitting of the dependences of the induced-current signal on the beam energy makes it possible to show that irradiation leads to the suppression of the recombination in the upper p-GaN layer, to a decrease in the probability of transition of charge carriers through the active region of the structure with quantum wells, and to a increase in the effective concentration of donors in the active region. These changes make it possible to explain the increase in the integral CL intensity, but it does not explain the change in its spectrum     

Characterization of structural modifications in poly-tetra-fluoroethylene induced by electron beam irradiation

The effects of electron beam irradiation doses on the poly-tetra-fluoroethylene (PTFE) have been studied. Several techniques, such as X-ray diffraction (XRD), differential scanning calorimetry (DSC), mechanical properties and Fourier transform infrared spectroscopy (FTIR) were applied to characterize the PTFE samples and to study the radiation effects on the crystal structure of the polymer.The irradiation dose up to 150 kGy showed an increase in the crystallinity degree of PTFE, which has been observed and confirmed during the DSC and XRD measurements. The increase in crystallinity was attributed to the scissions of the chain in the amorphous region. Moreover, the number-average molecular weights were estimated from the heat of crystallization measured by DSC technique. The results indicated that the molecular weights were decreased by increasing the heat of crystallization due to irradiation with doses up to 150 kGy. Radiation resistance of the irradiated and non-irradiated PTFE was investigated during its mechanical properties at room temperature. The dose at half value of the elongation at break is about 3.10 kGy while the dose at half value of the tensile strength is about 1.70 kGy.     

CMOS图像传感器在质子辐照下热像素的产生和变化规律

应用于空间的图像传感器在辐射影响下产生的热像素严重影响空间光电探测性能，本文通过质子辐照试验研究了热像素的产生和变化规律。首先，使用3 MeV和10 MeV两种能量的质子对图像传感器进行辐照，分析不同能量、不同注量的质子辐照产生热像素的性质；其次，再对辐照后的器件进行退火试验，分析热像素的退火规律。对于相同注量辐照，3 MeV质子辐照下热像素产生率大约是10 MeV质子辐照下的2.3倍，但是10 MeV质子辐照产生热像素的灰度值高于3 MeV质子；辐照过程中热像素的数量都是随着注量的增加线性增加。退火过程中，热像素数量都不断减少，而3 MeV质子辐照产生的热像素相比于10 MeV质子，退火更为显著。结果表明，质子辐照下每个质子与器件之间的作用过程及产生缺陷的机制是相对独立的，不同质子的作用过程之间没有相关性。不同能量的质子辐照产生缺陷的类型不同，导致热像素具有不同特性。