Photoelectric studies of gallium monosulfide single crystals

Photoconductivity (PC) studies were carried out on GaS single crystals prepared from melt by directional solidification. We studied the effect of light intensity, applied voltage on both the PC and the lifetime of carriers. The V-I characteristics and the absorption spectra were checked for different sample thickness. The present investigation was extended to study the spectral distribution of the photocurrent for GaS. It was found that the photocurrent curves are practically independent of the bias voltage. The energy gap for GaS was found to be 2.5 eV.     

One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

Distinguishing Structure Change of Cells Based on Analysis of Light Scattering Patterns

We develop a new method to distinguish structural change of cells based on light scattering and Fourier spectra analysis. The light scattering detection system is composed of a laser source, an optical microscope, a CCD with high resolution and low distortion. After the scattering patterns of cells are recorded by the CCD, the Fourier spectra are obtained by the intensity distribution of scattered light. In the experiment, the change of cell structure is designed by sonication treatment. It is found that different typical peaks can be shown in the Fourier spectra of MCF7 cells with and without sonication treatment, which indicates that this method can be used to distinguish the structural change of cells.     

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well (QDQW) nanoparticles synthesized by the colloidal method are investigated in this study. Strong exciton bands were observed in absorption and photoluminescence (PL) spectra taken for the CdTe/HgTe/CdTe QDQW nanoparticles. The energy difference between the exciton absorption and PL bands is larger than those obtained with CdTe and HgTe nanoparticles. Photocurrent-voltage curves and time-dependent photocurrent curves were obtained for the CdTe/HgTe/CdTe QDQW nanoparticles. With regard to the photocurrent mechanism of these QDQW nanoparticles, those charge carriers participating in the formation of excitons may not contribute to the photocurrent, because of the large binding energy of the excitons. Moreover, it is suggested in this paper that free holes in the HgTe quantum-well in the valance band, rather than free electrons, are the main contributors to the photocurrent.     

Influence of elastic-scattering processes on an X-ray photoelectron spectroscopy signal: Effect of the underlying surface

The boundary-value problem for the transfer equation with internal sources and without them is solved using the invariant embedding method. The influence of processes of photoelectron elastic scattering on the energy spectra of photoelectron emission is analyzed. The focus of attention is on the analysis of variations in the intensity and the spectral composition of the ascending flow of the photoelectron emission of a layer when underlying layers with different compositions appear. The physical fundamentals of the influence of elastic scattering on the formation of X-ray photoelectron spectra are demonstrated. The peak intensities for homogeneous Au 4s _1/2 and Si 2s _1/2 targets are calculated with and without the inclusion of reflection processes. The error appearing as a result of neglecting elastic scattering processes, which transform the descending motion into ascending type, is determined.     

Interband transitions and electronic Raman continuum in systems with strong inelastic scattering: Applications to YBa2Cu3O7-δ

We consider a model for the electronic Raman continuum which takes into account strong inelastic scattering and interband transitions. Calculations are based on four-vertex Raman scattering diagrams (Kawabata formalism) within the RPA for Coulomb interaction and the ladder diagram Bethe-Salpeter equation for the vertex. We apply this method to an analysis of the nature of the electronic Raman continuum in the normal state of the high-T _c superconductor YBa₂Cu₃O₇. In numerical calculations we take into account all the self-energy effects and make simulations for vertex corrections assuming that inelastic scattering is due to electron-phonon interaction. Theab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and inelastic scattering strength. The in-plane anisotropy is determined by interband transitions rather than by anisotropy of the Fermi surface. The ZZ continuum contains only weak contribution from interband transitions. It can be crudely described within a single band model with inelastic scattering and is strongly dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.     

Theory of resonant inelastic X-ray scattering spectrum for Ni impurities in cuprates

We perform the numerically exact diagonalization calculation for small Cu-O clusters with a Ni impurity site, representing the Ni-substituted cuprate, to examine the single-particle excitation spectra as well as the resonant inelastic X-ray scattering (RIXS) spectra. We clarify relations between low-energy electronic structures near the Ni site and excitations seen in the RIXS spectra.     

Bremsstrahlung in the nuclear medium: Search for coherence phenomena

Photon angular distributions and energy spectra up to the kinematical limit have been measured in proton reactions with light and heavy targets. For the first time the dependence of photon spectra on scattered protons has been measured to investigate the influence of multiple-scattering processes on the photon production. A strong suppression of bremsstrahlung relative to a quasi-free production model using the free pn bremsstrahlung cross section is observed in the low-energy regime of the photon spectrum in p+nucleus reactions. We attribute this effect to modifications of the bremsstrahlung amplitude in the nuclear medium and to interference of photon amplitudes due to multiple scattering of nucleons.     

Finite correction to Aharonov-Bohm scattering by a contact potential

We study the influence of a contact (or delta) potential on the Aharonov-Bohm scattering of nonrelativistic particles. In general the contact potential has no effect on the scattering as expected. However, when the magnetic flux and the strength of the contact potential take some special values, the Aharonov-Bohm scattering cross-section is manifestly changed. It is shown that these special values correspond to the simultaneous existence of two half-bound states in two adjacent angular momentum channels. Two limiting processes are presented to deal with the singularity of the contact potential and results of the same nature are obtained.     

微晶硅薄膜带隙态及微结构的研究

研究了氢化微晶硅薄膜费米能级以上的带隙态密度分布与薄膜微结构关系.采用拉曼谱和红外谱表征不同H稀释比制备的微晶硅薄膜的微结构.薄膜带隙态密度分布由调制光电流的相移分析技术测得.采用三相模型（非晶相、晶相和界面相）分析了薄膜带隙态密度与薄膜微结构的关系.结果表明,材料的带隙态密度随着界面相的增加而增加,当界面体积分数达到最大时,薄膜的带隙态密度也最大,即材料的带隙态密度与界面体积分数正相关. 关键词： 带隙态 界面相 微晶硅 调制光电流     

Influence of Light Scattering on Transmission Spectra of Photonic Crystals of Anodized Alumina

The light scattering is found to have a great influence on the transmission spectra of photonic crystal of anodic alumina. The incident light is diffracted by a regular array of branched channels or pores obeying the Bragg law. The intensity of transmission light decreases with the increasing etching time because of the increasing porosity or enlarging scatterers. The variation of intensity and widths of dips in transmission spectra of the porous alumina membrane versus the incidence angle shows the quite different characteristics from the other photonic crystal such as colloidal photonic crystal.     

Multiple scattering theory for slow neutrons (from thermal to ultracold)

The general theory of neutron scattering is presented, valid for the whole domain of slow neutrons from thermal to ultracold. Particular attention is given to multiple scattering which is the dominant process for ultracold neutrons (UCN). For thermal and cold neutrons, when the multiple scattering in the target can be neglected, the cross-section is reduced to the known value. A new expression for inelastic scattering cross-section for UCN is proposed. Dynamical processes in the target are taken into account and their influence on inelastic scattering of UCN is analyzed. Received 21 July 1999     

Terahertz radiation driven chiral edge currents in graphene

We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.     

Photocurrent spectra for above and below bandgap energies from photovoltaic PbS infrared detectors with graphene transparent electrodes

We discussed photocurrent spectra of photovoltaic PbS infrared detectors using multi-layer graphene as transparent electrode, where p-PbS films were deposited on TiO₂/FTO substrates by chemical bath deposition. In the photocurrent spectra, we observed both above-bandgap and sub-bandgap photocurrent without any external bias. We discussed impurity band model and grain boundary model in order to explain the sub-bandgap photocurrent near 15 μm. Since FTO is transparent in the visible range, we were able to illuminate green laser beam from the FTO back-side, and photo-response up to 50 μm was found to be enhanced. This long wavelength photo-response was attributed to the excitation of the photo-electrons accumulated at the TiO₂/PbS interface. Our photovoltaic PbS devices can detect not only short-infrared but also terahertz radiation at room temperature, which is highly applicable to various fields.     

Spectral Characterization of Couplings in a Mixed Optomechanical Model *

Abstract:We study the spectrum of single-photon emission and scattering in a mixed optomechanical model which consists of both linear and quadratic optomechanical interactions. The spectra are calculated based on the exact long-time solutions of the single-photon emission and scattering processes in this system. We find that there exist some phonon sideband peaks in the spectra and there are some sub peaks around the phonon sideband peaks under proper parameter conditions. The correspondence between the spectral features and the optomechanical interactions is confirmed, and the optomechanical coupling strengths can be inferred by analyzing the resonance peaks and dips in the spectra.     

Height and density correlations at liquid surfaces; application to X-ray scattering

We calculate height-height correlation functions, near-surface density-density correlation functions and the corresponding frequency integrated spectra for a heat conducting viscous fluid. We calculate scattering cross-sections for the static and dynamic X-ray scattering experiments recently developed to investigate the nanometer-scale structure and fluctuations of liquid interfaces. We show that the density-density correlations make an important contribution to the scattering, even using evanescent waves, and that they are strongly affected by the surface. We also discuss the implications for X-ray photon correlation spectroscopy and X-ray inelastic scattering. Received 12 October 2001 Published online 6 June 2002     

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a Ga As/Al0.35Ga0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.     

The application of CARS for temperature measurements in high pressure combustion systems

The determination of accurate temperatures from CARS N₂ Q-branch spectra in premixed flames is discussed for pressures up to 40 bar. The influence of collisional line narrowing in the CARS spectra is modelled by a MEG fitting law. It takes into account collisions of N₂ with CO₂ and H₂O. The analysis of the CARS data showed that the non-resonant background has an increasing influence on temperature with increasing pressure. Little influence on the quality of the fit between theory and experiment was found. Since there is a danger of residual systematic temperature deviations, which cannot be identified from the quality of the fit, spontaneous rotational Raman scattering is employed as an independent measuring technique.