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在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO2薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO2薄膜。X射线衍射结果表明:制备出的TiO2薄膜为锐钛矿型。X射线光电子能谱研究结果表明:注入的N离子与TiO2晶粒相互作用,形成了含氮的TiOxN2-x化合物,从而改变了TiO2薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO2薄膜在紫外和可见光区的吸收也明显增强。 相似文献
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采用直流反应磁控溅射法,以高纯Ti为靶材,高纯O2为反应气体,制备了TiO2薄膜.研究了氧气流量对薄膜结晶取向、表面形貌和光学性能的影响.研究发现,TiO2薄膜主要呈锐钛矿TiO2(101)择优取向,当氧气流量较小时,薄膜中还含有金属Ti(100),氧气流量较大时,薄膜含TiO2(101)和TiO2(004),成多晶态;薄膜的粗糙度和颗粒大小都随氧气流量的增大而增大;薄膜在400~1100nm可见-近红外波段有较高的透射率并且其吸收峰随着氧气流量的增大而红移,当氧气流量为5sccm时,平均透射率最高. 相似文献
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染料敏化太阳电池(DSC)中的纳米薄膜电极 是决定太阳电池光电转换性能的重要组成部分. 为改善薄膜电极特性, 采用了不同浓度的TiO2溶胶对DSC光阳极导电玻 璃和纳米TiO2多孔薄膜进行不同方式的界面处理. 利用X射线衍射方法对制备得到的多孔薄膜以及溶胶经高温处理 后致密层中纳米TiO2颗粒的尺寸及晶型进行了测试. 采用高分辨透射电子显微镜和场发射扫描电子 显微镜观察了纳米颗粒及薄膜微结构形貌. 采用强度调制光电流谱/光电压谱分析了TiO2溶 胶的不同处理方式对电子传输和复合的影响. 在100 mW· cm-2光强以及暗环境下分别测试了DSC的伏安输出性能以及暗电流. 结果表明, 不同浓度和处理方式均能较好地抑制暗电流. 溶胶处理后光生电子寿命τn延长, 电子传输平均时间τd相应缩短. 采用浓度为0.10 mol·L-1的 溶胶对导电玻璃和多孔膜同时处理, DSC的宏观输出特性最佳, 短路电流密度Jsc提高了10.9%, 光电转换效率η提高了11.9%. 相似文献
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运用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上旋涂制备了2-2型CoFe2O4/Pb(Zr0.53Ti0.47)O3磁电复合薄膜.制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小.SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构.制备的复合薄膜具有较好的铁电与铁磁性能.实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势. 相似文献
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本文检测SQ02在氯苯溶液、Al2O3薄膜和TiO2薄膜中的弛豫过程,从而探究SQ02在单分散态和聚集态下的光物理性质以及相应过程中界面电荷转移过程.实验数据表明,单分散态下SQ02 的寿命约为2 ns,但是,在Al2O3薄膜中显著减小到21 ps.电子从激发态SQ02转移到TiO2薄膜的时间约为2.6 ps,摄入电子量约为89.1%,与基于SQ02的染料敏化太阳能电池光电效应的效率相匹配.此外,一些染料和其他染料一起嵌入纳米晶薄膜中的弛豫时间可达到60 ps.由于其远离TiO2界面,因此不参与界面电荷转移. 相似文献
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分别以ZrOCl2·8H2O 和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和SiO2溶胶。用旋转镀膜法分别在K9玻璃和单晶硅片上制备了ZrO2/ SiO2多层膜。采用溶剂替换和紫外光处理等手段,有效地解决了ZrO2/SiO2多层膜中膜层开裂和膜间渗透等问题。应用扫描电子显微镜观测了薄膜的表面和剖面微观形貌,并用椭偏仪测得薄膜的厚度和折射率,研究了薄膜厚度、折射率与热处理温度、紫外光处理时间的关系,对所获得薄膜的紫外-可见、红外光谱进行了分析。用输出波长1064nm ,脉宽15ns 的电光调Q光系统产生的强激光进行了单层膜的辐照实验,结果发现溶剂替换后激光损伤阈值有所提高。 相似文献
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In this work, ZnO thin films covered by TiO2 nanoparticles (labeled as TiO2-ZnO thin films) were prepared by electron beam evaporation. The influence of annealing temperature on the photoluminescence property of the samples was studied. The structures and surface morphologies of the samples were analyzed by X-ray diffraction (XRD) and atomic force microscope, respectively. The photoluminescence was used to investigate the fluorescent properties of the samples. The measurement results show that the ultraviolet emission of ZnO thin films is largely enhanced after they are covered by TiO2 nanoparticles, while the green emission is suppressed. However, when the annealing temperature is relatively high (≥500 °C), the intensity of ultraviolet emission drops off and a violet emission peak along with a blue emission peak appears. This is probably connected with the atomic interdiffusion between TiO2 nanoparticles and ZnO thin film. Therefore, selecting a suitable annealing temperature is a key factor for obtaining the most efficient ultraviolet emission from TiO2-ZnO thin films. 相似文献
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《Current Applied Physics》2018,18(7):803-809
The energy demand of the world is rapidly increasing and to cater this, there is a need to explore new renewable energy resources. CdSe thin film solar cells may be promising alternative to the CdTe solar cells which are extensively studied and used in solar cell technology. The pre/post deposition chlorine based treatments (viz. CdCl2, MgCl2, NH4Cl) are the important steps to enhance the performance of Cd-based thin film solar cells. Therefore, a study on MgCl2 activation treatment to CdSe thin films for solar cell applications as absorber layer is undertaken. Different physical properties of e-beam evaporated CdSe films (thickness 550 nm) grown on glass and ITO substrates are investigated and found to be strongly dependent on the post-chlorine treatment. The films have cubic zinc-blende structure and phase transformation from cubic (111) to hexagonal (002) is achieved with the MgCl2 treatment while the optical band gap is reduced. I-V characteristics reveal the linear relation between voltage and current as well as the surface roughness is varied with treatment and improved homogeneity. The deposition of CdSe thin films is confirmed by elemental analysis where Cd and Se were found to be rich with treatment. The investigated results suggest that CdSe thin films treated by MgCl2 and annealed at 320 °C may be a viable alternative absorber layer to the Cd-based solar cells. 相似文献
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Peng Sun Haibin Yang Wuyou Fu Minghui Li Yanyan Zhang 《Applied Surface Science》2010,256(10):3170-9643
Nanostructured titanium dioxide (TiO2) thin films have been prepared on metal substrates using a facile layer-by-layer dip-coating method. The phase structure and morphologies of preparing samples were characterized by means of X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results confirm that films are highly crystalline anatase TiO2 and free from other phases of titanium dioxide. Scanning electron microscopy (SEM) shows that the nanoparticles are sintered together to form a compact structure. The electrical properties of samples were investigated by cutternt-voltage analysis, the result indicates that a rectifying junction between the nanocrystalline TiO2 film and metal substrate was formed. The photoelectrochemical characteristics recorded under 1.5 AM illumination indicates that the as-fabricated thin film electrode possesses the highest photocurrent density at 450 °C, which is 1.75 mA/cm2 at 0 V vs. Ag/AgCl. 相似文献
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The interface roughness and interface roughness cross-correlation properties affect the scattering losses of high-quality optical thin films. In this paper, the theoretical models of light scattering induced by surface and interface roughness of optical thin films are concisely presented. Furthermore, influence of interface roughness cross-correlation properties to light scattering is analyzed by total scattering losses. Moreover, single-layer TiO2 thin film thickness, substrate roughness of K9 glass and ion beam assisted deposition (IBAD) technique effect on interface roughness cross-correlation properties are studied by experiments, respectively. A 17-layer dielectric quarter-wave high reflection multilayer is analyzed by total scattering losses. The results show that the interface roughness cross-correlation properties depend on TiO2 thin film thickness, substrate roughness and deposition technique. The interface roughness cross-correlation properties decrease with the increase of film thickness or the decrease of substrates roughness. Furthermore, ion beam assisted deposition technique can increase the interface roughness cross-correlation properties of optical thin films. The measured total scattering losses of 17-layer dielectric quarter-wave high reflection multilayer deposited with IBAD indicate that completely correlated interface model can be observed, when substrate roughness is about 2.84 nm. 相似文献
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In this study, SnO2/TiO2 thin films are fabricated on SiO2/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO2/Si substrates. Therefore, the results suggest that SiO2/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO2/TiO2 films. 相似文献
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Yanming Shen Hua Yu Jianke Yao Shuying Shao Zhengxiu Fan Hongbo He Jianda Shao 《Optics & Laser Technology》2008,40(3):550-554
TiO2 thin films were prepared by electron beam evaporation at different oxygen partial pressures. The influences of oxygen partial pressure on optical, mechanical and structural properties of TiO2 thin films were studied. The results showed that with the increase of oxygen partial pressure, the optical transmittance gradually increased, the transmittance edge gradually shifted to short wavelength, and the corresponding refractive index decreased. The residual stresses of all samples were tensile, and the value increased as oxygen partial pressure increasing, which corresponded to the evolutions of the packing densities. The structures of TiO2 thin films all were amorphous because deposition particles did not possess enough energy to crystallize. 相似文献
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Sung Woo Jung Min-A Park Jae-Hong Kim Hyunsoo Kim Chel-Jong Choi Soon Hyung Kang Kwang-Soon Ahn 《Current Applied Physics》2013,13(7):1532-1536
CdS/CdSe co-sensitizers on TiO2 films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO2/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO2/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO2 films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO2/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO2/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO2/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO2/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO2/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO2/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate. 相似文献
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Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate 下载免费PDF全文
选用三水醋酸铅、乙酰基丙酮酸锆、四异丙氧基钛、乙酰丙酮作初始材料,用同样的方法分别制备了锆钛酸铅(PZT)和钛酸铅(PT)两种固体前驱物. 采用改良型的溶胶-凝胶工艺技术,分别在不同的Pt-Ti-Si3N4-SiO2-Si基底上,按照不同的组合方式,制备了三种多层薄膜:PZT、PT/PZT-PZT/PT、PT/PZT/-/PZT/PT. 较详细地讨论了薄膜制备的工艺技术,发现当凝胶通过烧结和干燥后变成固态物质时,薄膜内部存在着较大的残余应力,当薄膜在600 ºC下退火时其内部残余应力可以被减小. 通过拉曼 相似文献
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用溶胶-凝胶方法在Pt/Ti/SiO2/Si衬底上制备了Na+的不同浓度均匀掺杂和成分梯度掺杂(上梯度)钛酸锶钡(Ba0.25Sr0.75TiO3)薄膜.电性能测试表明随着均匀掺杂浓度的增加,薄膜介电常数和损耗都减小,而漏电流先减小(掺杂浓度小于2.5mol%时)后又逐渐增加.场发射扫描电镜分析表明,均匀掺杂浓度增加到2.5mol%后薄膜表面呈疏松多孔状结构,这可能是导致漏电流又逐渐增大的原因.Na+的上梯度掺杂避免了掺杂浓度增加到2.5mol%后薄膜生长过程中出现的孔洞现象,于是薄膜的综合电性能得到了进一步提高.深入、系统地分析了杂质不同分布方式对薄膜结构和性能有不同影响的原因. 相似文献
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In this work TiO2 thin films were modified with gold/palladium (Au/Pd) bimetallic paticles by sputtering method. TiO2 films were deposited on ITO (SnO2:In) by Doctor Blade method and post-anneling. The properties of the films were studied through measurements of XRD (X-ray diffraction) and AFM (atomic force microscopy). The degradation of methylene blue was studied by UV-irradiated pure TiO2 and Au/Pd-modified TiO2 in aqueous solution. Langmuir-Hinshelwood model was used to obtain kinetic information. Photocatalytic study indicated that Au/Pd-modified TiO2 photocatalytic activity was better than TiO2 pure; the best half-life time for Au/Pd-modified TiO2 in photodegradation was 2.8 times smaller than TiO2 pure; finally the efficiency in methylene blue photodegradation was improved from 23% to 43% when Au/Pd-modified TiO2 films were used. 相似文献