溶剂热再结晶合成由纳米颗粒自组装成的一维CdS纳米棒

采用两种不同的溶剂热路径合成出了不同形貌和尺寸的CdS纳米晶, 一种是以无水乙二胺(en) 为溶剂, CdCl₂·2.5H₂O和硫脲(H₂NCSH₂N) 为镉源和硫源, 在不同反应温度(160 ℃-220 ℃ 下制备出了CdS纳米晶, 讨论温度对CdS纳米晶生长的影响; 另一种是以en为溶剂, 将在160 ℃下合成的产物在200 ℃下原位再结晶生长2-8 h, 分析原位生长时间对CdS纳米晶生长的影响. 通过X射线衍射(XRD)、 扫描电子电镜(SEM) 和透射电子电镜(TEM) 等表征产物的物相、 形貌和微结构, 分析可知: 两种路线合成的产物均为六方相CdS; 当温度为160 ℃时, 产物形貌为纳米颗粒状, 当温度高于160 ℃时, 产物为CdS纳米棒状; 同时, 在200 ℃下原位再结晶生长不同时间后发现产物形貌由纳米颗粒转变为纳米棒, 通过场发射扫描电镜(HRTEM) 分析可知: 纳米棒是由零维纳米颗粒自组装而成. 最后, 讨论了影响产物CdS纳米晶形貌转变的因素和纳米棒的生长机理.     

联合体驱使生长法制备ZnO纳米棒及其表征

在常压环境下采用联合体驱使生长(Aggregation-driven growth)法在镀有ZnO纳米薄膜的医用盖玻片衬底和锌箔上制备了不同直径、高取向、密集生长的ZnO纳米棒阵列结构,发现平均直径与生长时间呈线性关系。X射线衍射(XRD)谱图中出现了较强的(002)峰,表明制备的纳米棒阵列具有高度c轴择优生长取向;高分辨透射电子显微镜(HRTEM)和选区电子花样衍射图谱(SAED)结果表明我们得到的单根纳米棒为沿(002)生长的单晶结构。分析确定盖玻片上的纳米棒阵列是以ZnO纳米薄膜缓冲层上的ZnO种子颗粒为成核点生长形成的。     

钼酸根离子钝化层对氧化铁薄膜光电催化氧化水的性能影响研究

本文研究了氧化铁(α-Fe₂O₃)薄膜光阳极的合成及其光电催化分解水产氧的性能. 在合成氧化铁过程中，采用原位和非原位方式引入钼酸根离子，调控氧化铁薄膜的生长模式和表面特性. 实验发现原位引入钼酸根离子会显著影响氧化铁薄膜的形貌以及厚度. 而非原位表面修饰钼酸根离子则会保持氧化铁的纳米棒形貌，并有效提高其光电催化分解水的性能. 文章通过紫外-可见吸收光谱，透射电子显微镜(TEM)，扫描电子显微镜(SEM)，莫特-肖特基测试(M-S)，电化学阻抗(EIS)以及光电催化性能测试等手段对材料的结构和性能进行了研究.     

刚性衬底上铜铟硒纳米棒阵列的合成与表征

在覆盖有钨电极的硅衬底上利用多孔阳极氧化铝模板为生长掩膜电沉积合成垂直排列的铜铟硒纳米棒阵列. 多孔阳极氧化铝模板由阳极氧化磁控溅射制备的铝膜制成. 扫描电子显微镜结果表明,该纳米棒阵列结构致密,直径约100 nm长度约1μm,纵横比为10. X射线衍射、微区拉曼光谱和高分辨透射电子显微镜结果表明,真空条件下450 oC退火处理的铜铟硒纳米棒是多晶纯相的黄铜矿结构的铜铟硒,在纳米棒轴向方向上有比较大的晶粒尺寸. 能量色散X射线光谱表明,铜铟硒纳米棒的化学组成接近InSe₂的化学计量比,由吸收光谱分析推算铜铟硒纳米棒带隙为0.96 eV.     

蒸发条件对碘化铅多晶薄膜结构的影响

采用真空蒸发法在普通玻璃上制备了PbI₂多晶薄膜.研究了蒸发速率、蒸发源与衬底距离、薄膜厚度以及衬底温度等实验条件对所制备PbI₂多晶薄膜结构的影响.利用X射线衍射仪和扫描电子显微镜对样品进行了测试.结果表明，在衬底温度为室温时得到(001)择优取向的多晶PbI₂薄膜，即沿c轴垂直衬底方向取向生长的薄膜.当衬底温度升高时，薄膜的择优取向逐渐由(001)转向(003)，且晶体颗粒变大.薄膜中的内应力随衬底温度的升高而降低.     

SiO2/Si衬底上石墨烯的制备与结构表征

在分子束外延(MBE)设备中,利用直接沉积C原子的方法在覆盖有SiO₂的Si衬底(SiO₂/Si)上生长石墨烯,并通过Raman光谱和近边X射线吸收精细结构谱等实验技术对不同衬底温度(500℃,600℃,700℃,900℃,1100℃,1200℃)生长的薄膜进行结构表征.实验结果表明,在衬底温度较低时生长的薄膜是无定形碳,在衬底温度高于700℃时薄膜具有石墨烯的特征,而且石墨烯的结晶质量随着衬底温度的升高而改善,但过高的衬底温度会使石墨烯质量降低.衬底温度为1100℃时结晶质量最好.衬底温度较低时C原子活性较低,难以形成有序的C-sp²六方环.而衬底温度过高时(1200℃),衬底表面部分SiO₂分解,C原子与表面的Si原子或者O原子结合而阻止石墨烯的形成,并产生表面缺陷导致石墨烯结晶变差.     

Gd2O3:Eu3+纳米晶的燃烧合成及光致发光性质

采用柠檬酸作燃烧剂用燃烧合成法制备了Gd₂O₃:Eu³⁺纳米晶.用X射线衍射仪(XRD)、高分辨透射电子显微镜(HRTEM)和荧光分光光度计等对Gd₂O₃:Eu³⁺纳米晶的结构、形貌和发光性能进行了分析.结果表明：不同柠檬酸与稀土离子配比(C/M)制备的样品经800℃ 退火1 h后，均得到了纯立方相的Gd₂O₃:Eu³⁺纳米晶，晶粒尺寸约为30 nm，尺寸分布较窄，其中以C/M=1.0时制备的纳米晶结晶性最好，发光强度最大.Gd₂O₃:Eu³⁺纳米晶主发射峰位置均在612 nm处 (⁵D₀→⁷F₂跃迁)，激发光谱中电荷迁移态发生红移，观察到Gd³⁺向Eu³⁺的有效能量传递.对柠檬酸与稀土离子配比(C/M)对结晶度、发光性质等的影响也进行了分析和讨论.     

18 MeV质子辐照对TiNi形状记忆合金R相变的影响

 研究了用HZ-B串列加速器的18MeV质子辐照对TiNi形状记忆合金R相变的影响，辐照在奥氏体母相状态下进行。示差扫描量热法（DSC）表明，辐照后R相变开始温度T^s_R和逆马氏体相变结束温度T^f_A随辐照注量的增加而降低。当注量为1.53×10¹⁴/cm²时，T^sR和T^f_A分别下降6K和13K，辐照未引起R相变结束温度T^s_R和逆马氏体相变开始温度T^f_A的变化。表明辐照后母相(奥氏体相)稳定。透射电镜（TEM）分析表明辐照后没有引起合金可观察的微观组织变化。辐照对R相变开始温度T^s_{R和逆马氏体相变结束温度Af的影响可能是由于质子辐照后产生了孤立的缺陷团，形成了局部应力场，引起晶格有序度的下降所造成的。}     

MgB2超导薄膜的微波测量

报道了利用蓝宝石介质谐振器技术测量MgB₂超导薄膜的微波表面电阻R_{s、0K时的穿透深度λ(0)和超导能隙Δ(0).λ(0)和Δ(0)的值是通过先测量样品穿透深度λ(T)的变化量Δλ(T)，然后由BCS理论模型拟合Δλ(T)的实验数据得到的.测试样 品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜， 薄膜的超导转变温度和转变宽度分别为38K和01K.微波测试结果表明在10K，18GHz下M gB2薄膜的Rs约为100μΩ，可以和高质量的YBCO薄膜的Rs值相比拟；BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm，Δ(0)=113k Tc.}     

STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD

The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin² ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (T_s). The effective stress in the films calculated by the effective stress model increased with the increase of T_s. Furthermore, the dependence of effective stress in the films on T_s was also investigated.     

Thioglycolic acid (TGA) assisted hydrothermal synthesis of SnS nanorods and nanosheets

Nanorods and nanosheets of tin sulfide (SnS) were synthesized by a novel thioglycolic acid (TGA) assisted hydrothermal process. The as prepared nanostructures were characterized by X-ray diffraction (XRD) study, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD study reveals the formation of well-crystallized orthorhombic structure of SnS. Diameter of the SnS nanorods varied within 30-100 nm. High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) patterns identify the single crystalline nature for the SnS nanocrystals. The mechanism for the TGA assisted growth for the nanosheets and nanorods have been discussed.     

Growth and morphologies of one- and three-dimensional MgO nanostructures

A variety of MgO nanostructures have been fabricated by a direct gas reaction route using Mg as starting material. The evaporation of Mg combined with a mixed oxygen/argon gas provided the constituents for the MgO nanostructure growth. They were characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). SEM observations revealed several MgO morphologies including one-dimensional nanowires, three-dimensional cube-shaped entities and rope-like nanowires. HRTEM and SAED results indicate that they were single-crystalline face-centered cubic MgO. PACS 81.10.Bk; 79.60.Jv     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders.The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy(FESEM),transmission electron microscopy(TEM),selected area electronic diffraction(SAED),high-resolution transmission electron microscopy(HRTEM),x-ray diffraction(XRD),Raman and photoluminescence(PL) spectra analysis.The new peaks at 356,450,and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed,implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects.The growth mechanism of these nanostructures belongs to the vapour-liquid-solid(VLS) mechanism.     

Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

Straight and well-aligned GaN nanorods have been successfully synthesized by molecular beam epitaxy (MBE) method. The GaN nanorods have been characterized by field-emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). SEM images show that GaN nanorods are constituted with two parts of which shapes are different from each other. The upper part of the nanorod is very thin and its lower part is relatively thick. The XRD and EDS analysis have identified that the nanorods are pure hexagonal GaN with single crystalline wurtzite structure. The TEM images indicate that the nanorods are well crystallized and nearly free from defects. The XRD, HRTEM, and SAED pattern reveal that the growth direction of GaN nanorods is 〈0001〉. The photoluminescence (PL) spectra indicate the good emission property for the nanorods. Finally, we have demonstrated about the two-step growth of the nanorods. PACS 81.07.Bc; 81.05.Ea; 81.15.Hi     

Synthesis of single-crystalline hollow β-FeOOH nanorods <Emphasis Type="Italic">via</Emphasis> a controlled incomplete-reaction course

The single-crystalline β-FeOOH hollow nanorods with a diameter ranging from 20∼30 nm and length in the range of 70–110 nm have been successfully synthesized through a two-step route in the solution. The phase transformation and the morphologies of the hollow β-FeOOH nanorods were investigated with X-ray powdered diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electric diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), infrared spectrum (IR) and thermo-gravimetric analysis (TGA). These studies indicate that the first step is an incomplete-reaction course. Furthermore, The formation mechanism of the hollow nanorods has been discussed. It is found that the mixed system including chitosan and n-propanol is essential for the final formation of the hollow β-FeOOH nanorods.     

Synthesis of ZnS nanorods by annealing precursor ZnS nanoparticles in NaCl flux

ZnS nanorods were fabricated by annealing precursor ZnS nanoparticles, which were prepared by one-step, solid-state reaction of ZnCl₂ and Na₂S through grinding by hand at ambient temperature, in NaCl flux. The as-prepared ZnS nanorods have diameters of 40-80 nm, and lengths up to several micrometers. The structural features and chemical composition of the nanorods were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), and Raman spectra.     

Formation of hexagonal shaped wurtzite zinc sulphide nano rods

Zinc sulfide nanorods with good photoluminescence have been successfully fabricated using a simple sol-gel process via ultrasonication, with mercaptoethanol as capping agent. The formation of ZnS nucleation, followed by subsequent growth, is significant in obtaining highly oriented ZnS nanorods. Temperature, time, and capping agent also proved to be significant factors in the growth of ZnS nanorods and greatly affect their photo luminescent properties. X-ray diffraction (XRD) analysis, low and high-resolution transmission electron microscopy (TEM & HRTEM), selected-area electron diffraction (SAED) pattern, and scanning electron microscopy (SEM) indicated that the ZnS nanorods were single crystal in nature and that they had grown up preferentially along the [0001] direction. This simple method of nucleation, followed by their successive growth, resulted in the development of an effective and low-cost fabrication process for high-quality ZnS nanorods with good photo luminescent properties that can be applied to luminescent sensors and optoelectronic devices.     

Formation mechanisms of GaN nanorods grown on Si(1 1 1) substrates

Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of , {0 0 0 1}, and { } facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.