点缺陷对单层MoS2电子结构及光学性质的影响研究

采用基于第一性原理的贋势平面波方法,对不同类型点缺陷单层MoS2电子结构、能带结构、态密度和光学性质进行计算。计算结果表明：单层MoS2属于直接带隙半导体,禁带宽度为1.749ev,V-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.671eV的p型半导体,V-S缺陷MoS2的带隙变窄为Eg=0.974eV,S-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.482eV; Mo-S缺陷形成Eg=0.969eV直接带隙半导体,费米能级上移靠近价带。 费米能级附近的电子态密度主要由Mo的4d态和s的3p态电子贡献。光学性质计算表明：空位缺陷对MoS2的光学性质影响最为显著,可以增大MoS2的静态介电常数、折射率n0和反射率,降低吸收系数和能量损失。     

Pb2+: CaWO4晶体电子结构研究

运用局域密度泛函理论的离散变分方法（DV-Xa）模拟计算了掺Pb2+后CaWO4晶体的电子结构。计算结果表明，掺Pb2+后晶体的带隙明显变窄；晶体中可能存在Pb的6 s态到W的5 d态的电子跃迁过程，用过渡态的方法计算得到其光学跃迁能为3.86 eV（对应322 nm吸收带）。并解释了晶体内440 nm发光带起源于W的5 d态到Pb的6 s的金属离子间电子转移过程。     

BaZrO3和CaZrO3能带和光学性质的第一性原理研究

采用基于密度泛函理论基础上的CASTEP软件包,计算了BaZrO3和CaZrO3的能带以及光学性质.计算得到BaZrO3直接带隙和间接带隙分别为3.49 eV和3.23eV,CaZrO3直接带隙和间接带隙分别为3.73 eV和3.38 eV.对这两种材料的介电函数、吸收系数、反射系数、折射系数、湮灭系数和能量损失系数等光学系数进行了计算,并基于电子能带对光学性质进行了解释.得出,光学特性的异同是由于其内部微观结构上的异同所引起的.     

MgS和MgSe带隙的GW近似修正

应用基于密度泛函理论下的局域密度近似（DFT-LDA）方法研究了岩石矿结构的 MgS和MgSe的晶体结构和能带结构。本文得到稳定结构的晶格常数与已知实验数据相吻合，MgS和MgSe都是间接带隙半导体且带隙值分别为2.74 eV和1.70 eV。尽管本文利用LDA计算的带隙值与之前的理论值很接近，但是局域密度近似常常低估带隙值。因此应用准粒子GW（G是格林函数，W是库伦屏蔽相互作用）近似 对MgS和MgSe的带隙值进行了修正，其结果分别为4.15eV和2.74 eV。GW近似的结果应该是合适的值。     

MgS和MgSe带隙的GW近似修正

应用基于密度泛函理论下的局域密度近似（DFT-LDA）方法研究了岩石矿结构的 MgS和MgSe的晶体结构和能带结构。本文得到稳定结构的晶格常数与已知实验数据相吻合，MgS和MgSe都是间接带隙半导体且带隙值分别为2.74 eV和1.70 eV。尽管本文利用LDA计算的带隙值与之前的理论值很接近，但是局域密度近似常常低估带隙值。因此应用准粒子GW（G是格林函数，W是库伦屏蔽相互作用）近似 对MgS和MgSe的带隙值进行了修正，其结果分别为4.15eV和2.74 eV。GW近似的结果应该是合适的值。     

畸形钙钛矿DyMnO3电子结构与光学性质的第一性原理研究

基于密度泛函理论的广义梯度近似对畸形钙钛矿DyMnO₃的基态电子结构及光学性质进行计算和分析.结果表明优化的晶体结构参数与实验结果相符合，DyMnO₃具有非间接带隙大小为0.91 eV的能带结构，结合态密度分析了各元素价电子态的分布.计算分析包括介电常数，吸收系数，反射率等光学性质.     

Effect of Pressure on Electronic Structures and Optical Properties of Rocksalt InN

用基于密度泛函理论的第一性原理结合广义梯度近似研究了高压下盐岩相InN的电子结构和光学性质. 计算得到的晶格常数与实验值非常吻合,并发现Γ和X的带隙随压力增加而增大,而带隙在L点却并不明显. 计算出Γ点的带隙的压力系数是44 meV/GPa. 讨论计算得到的InN的光学性质,结合能带结构和电子态密度.     

Mn掺杂6H-SiC的第一性原理研究

本文通过密度泛函理论第一性原理平面波超软赝势计算方法计算了Mn掺杂6H-SiC的电子结构与光学性质。计算结果显示掺杂Mn后的6H-SiC为间接带隙p型半导体,且带隙较本征体有所降低,带隙由2.022 eV降为0.602 eV,电子从价带跃迁所需能量减少。掺杂后的Mn的3d能级在能带结构中以杂质能级出现,提高了载流子浓度,导电性增强。光学性质研究中,掺杂Mn后的介电函数虚部在低能处增加,电子激发态数量增多,跃迁概率增大。掺杂后的光吸收谱能量初值也较未掺杂的3.1 eV扩展到0 eV,反射谱发生红移。由于禁带宽度的降低使得光电导率起始范围得到扩展。     

稀土元素Lu，Sc掺杂GaN光电特性的第一性原理研究

基于密度泛函理论，采用广义梯度近似（GGA+U）平面波超软赝势方法，计算了本征GaN和稀土元素Lu、Sc掺杂GaN体系的电子结构和光学性质.结果表明：计算得到本征GaN的禁带宽度为3.37 eV，与实验值（3.39 eV）接近. Lu掺杂后GaN体系带隙变窄，而Sc掺杂后诱导了深能级杂质，带隙变宽，但仍为直接带隙半导体.掺杂后体系均发生畸变，晶格常数和体积增大，且在费米能级附近产生杂质带. Lu、Sc掺杂GaN体系的静态介电常数较本征GaN（4.50）均有所增大.Lu、Sc掺杂后体系介电常数虚部整体左移，光吸收边往低能方向移动，发生了红移现象.计算结果对稀土元素Lu、Sc掺杂GaN高压光电材料的开发和研究提供了理论依据.     

Rb吸附石墨烯纳米带电子性质和光学性质的研究

本文基于密度泛函理论的第一性原理方法了计算了Rb、O和H吸附石墨烯纳米带的差分电荷密度、能带结构、分波态密度和介电函数，调制了石墨烯纳米带的电子性质和光学性质，给出了不同杂质影响材料光学特性的规律.结果表明本征石墨烯纳米带为n型直接带隙半导体且带隙值为0.639 eV；Rb原子吸附石墨烯纳米带之后变为n型简并直接带隙半导体，带隙值为0.494eV；Rb和O吸附石墨烯纳米带变为p型简并直接带隙半导体，带隙值增加为0.996eV；增加H吸附石墨烯纳米带后，半导体类型变为n型直接带隙半导体，且带隙变为0.299eV，带隙值相对减小，更有利于半导体发光器件制备.吸附Rb、O和H原子后，石墨烯纳米带中电荷密度发生转移，导致C、Rb、O和H之间成键作用显著.吸附Rb之后，在费米能级附近由C-2p、Rb-5s贡献；增加O原子吸附之后，O-2p在费米能级附近贡献非常活跃，杂化效应使费米能级分裂出一条能带；再增加H原子吸附之后，Rb-4p贡献发生蓝移，O-2p在费米能级附近贡献非常强，费米能级分裂出两条能带.Rb、O和H的吸附后，明显调制了石墨烯纳米带的光学性质.     

锰掺杂二硅化铬电子结构和光学性质的第一性原理计算

采用基于第一性原理的密度泛函理论(DFT)赝势平面波方法计算了锰掺杂二硅化铬(CrSi2)体系的能带结构、态密度和光学性件质.计算结果表明末掺杂CrSi2属于间接带隙半导体间接带隙宽度△ER=0.35 eV;Mn掺杂后费米能级进入导带,带隙变窄,且间接带隙宽度△Eg=0.24 eV,CrSi2转变为n型半导体.光学参数发生改变,静态介电常数由掺杂前的ε1(O)=32变为掺杂后的ε1(O)=58;进一步分析了掺杂对CrSi2的能带结构、态密度和光学性质的影响,为CrSi2材料掺杂改件的研究提供r理论依据.     

Electronic and optical properties of BAs under pressure

The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy-pressure data, the structural phase transition from ZB to RS is observed at 141 GPa. Our calculated electronic properties show that ZB-BAs is a semiconductor, whereas RS-BAs is a semi-metal. Calculations of the dielectric function and absorption coefficient have been performed for the energy range 0-30 eV. The dependence of pressure on band structure and optical spectra is also investigated. The results are compared with available theoretical and experimental data.     

A DFT study on the interaction between europium,uranium and SWCNT

We investigate the electronic and band structure for the (8; 0) single-wall carbon nanotube (SWCNT) with a europium (Eu) and a uranium (U) atom outside by using the first-principles method with the density functional theory (DFT). The calculated band structure (BS), total density of state (TDOS), and projected density of state (PDOS) can elucidate the differences between the pure (8; 0) SWCNT and the nuclei outside the SWCNT. The indirect band gaps are obtained when Eu and U atom are put outside the (8; 0) CNT; they are 0.037 eV and 0.036 eV, respectively, which is much smaller than 0.851 eV for pure CNT. Compared with pure (8; 0) SWCNT, the bottom of the conduction band moves down by 0.383 eV and 0.451 eV with the Eu and U outside, and the top of valence band moves up by 0.127 eV and 0.162 eV, respectively. More significantly, the top of the valence band has exceeded the fermi-level. So, a single nucleus changes the semiconductor character of pure nanotube to semi-metal.     

Electronic structure,optical dielectric constant and born effective charge of EuAlO3

EuAlO₃ (EAO) is synthesized by the sol–gel process. The Rietveld refinement of the X-ray diffraction data shows that the material has orthorhombic structure with Pbnm space group. The density functional theory calculations are initiated with the experimental lattice parameters. The full potential linearized augmented plane wave method and projector augmented wave method are used to investigate the ground state properties of EAO. An indirect band gap of 1.8 eV is observed with the valence band maximum at the Γ point and the conduction band minimum at the R point. The X-ray photoemission spectroscopy (XPS) spectra of EAO are obtained in the energy window of 0–1000 eV. Using the electronic density of states, the valence band (VB) spectrum of EAO is generated and compared with the observed VB-XPS spectrum. The optical dielectric constant and the refractive index of the material are calculated for the photon energy radiation. The optical properties show a considerable anisotropy in the material. The Born effective charge of various elements and the dielectric tensor of EAO have been calculated.     

First principles study of the electronic and optical properties of SbTaO4

The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO₄ are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO₄. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO₄. The real and imaginary parts of the dielectric function of SbTaO₄ are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data.     

黑索金电子结构和光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理方法对黑索金晶体的电子结构和光学性质进行了计算. 结果表明: 黑索金是能隙值为3.43 eV的绝缘体, 价带主要由C, N和O的2s与2p态构成, 而导带主要由N-2p和O-2p态构成; 静态介电函数ε₁(0)=1.38, 介电常数的虚部有5个峰值, 其中最大峰值在光子能量4.59 eV处, 并对造成这些峰值的可能的电子跃迁做了详细分析. 利用能带结构和态密度分析了黑索金的光反射系数、吸收系数及能量损失函数等光学性质, 发现黑索金是对光吸收、反射及能量损失不敏感的材料. 关键词： 黑索金 第一性原理 电子结构 光学性质     

First-principles calculations of structural, electronic, optical and elastic properties of magnesite MgCO3 and calcite CaCO3

Detailed ab initio calculations of the structural, electronic, optical and elastic properties of two crystals - magnesite (MgCO₃) and calcite (CaCO₃) - are reported in the present paper. Both compounds are important natural minerals, playing an important role in the carbon dioxide cycling. The optimized crystal structures, band gaps, density of states diagrams, elastic constants, optical absorption spectra and refractive indexes dependence on the wavelength all have been calculated and compared, when available, with literature data. Both crystals are indirect band compounds, with calculated band gaps of 5.08 eV for MgCO₃ and 5.023 eV for CaCO₃. Both values are underestimated by approximately 1.0 eV with respect to the experimental data. Although both crystals have the same structure, substitution of Mg by Ca ions leads to certain differences, which manifest themselves in noticeable change in the electronic bands profiles and widths, shape of the calculated absorption spectra, and values of the elastic constants. Response of both crystals to the applied hydrostatic pressure was analyzed in the pressure range of phase stability, variations of the lattice parameters and characteristic interionic distances were considered. The obtained dependencies of lattice constants and calculated band gap on pressure can be used for prediction of properties of these two hosts at elevated pressures that occur in the Earth's mantle.     

FeVO_4电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了三斜结构FeVO_4的结构,基态的能带结构、总态密度和分波态密度.将FeVO_4非共线的螺旋磁结构简化为六种不同的反铁磁结构,通过比较不同自旋构型的总能确定了基态磁结构.能带计算和总态密度结果均显示FeVO_4是能隙为2.19 e V的半导体,与实验结果相符.考虑Fe原子的在位库仑能,FeVO_4的能带结构和态密度都发生变化,说明FeVO_4晶体是一个典型的强关联电子体系.     

GdN,GdP和GdAs的电子结构：第一性原理研究

用从头计算第一性原理对Gd-V化合物进行了电子结构与磁性的理论研究.计算的理论基础是密度泛函理论和局域(自旋)密度近似,并应用了相对论性LMTO-ASA计算方法.结果表明Gd-V的非自旋极化能带均为半金属特征.在进行宽能带的自能修正后GdN的非自旋极化能带是半导体行为(E_{g≈019eV).自旋极化的LSDA计算结果表明Gd-V均为半金属性的能带结构,即空带与价带有微弱的交叠.在布里渊区的X点和Γ点,分别有n型和p型色散的能带穿过费米面.对于GdN而言,它的上自旋子带为半金属能带,而下自旋子带却 关键词：}