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1.
We report on a new preparation method for magnesium diboride (MgB2) films by chemical vapour deposition (CVD) from diborane (B2H6).It is two-step ex situ approach,with the precursor boron films grown by CVD from B2H6 at 460℃,followed by a post-annealing process in magnesium (Mg) vapour at 830℃.The prepared MgB2 thin films on Al2O3 polycrystalline substrates have an onset transition temperature of 35K and a zeroresistance temperature of about 24K.Well-crystallized MgB2 grains have clearly been observed in the SEM images and confirmed by x-ray diffraction analysis.The advantages of the proposed method are the feasibility to prepare large-area superconducting films and the compatibility with semiconductor technology.  相似文献   

2.
Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK (λe0 = 463nm) and surface resistance (R8 = 1.52 mΩ at 11 K and 8. 73 GHz) by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.  相似文献   

3.
Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.  相似文献   

4.
MgxZn1xO (x ≤ 0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg x Zn 1 x O films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x=0 to 3.90 eV at x=0.30.  相似文献   

5.
TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N (396 eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3 eV, which is verified by the optical-absorption spectra.  相似文献   

6.
The optical properties of hexagonal boron nitride(h-BN) thin films were studied in this paper.The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra.h-BN thin films with a wide optical band gap Eg(5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency(RF) bias magnetron sputtering and post-deposition annealing at 970 K.The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model.The annealed film shows satisfactory structure stability.However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films.The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures.In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions.Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.  相似文献   

7.
邓金祥  秦扬  孔乐  杨学良  李廷  赵卫平  杨萍 《中国物理 B》2012,21(4):47202-047202
Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.  相似文献   

8.
TiO2 thin films are obtained by dc reactive magnetron sputtering. A target of titanium (99.995%) and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers (100). The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry (VASE) and supported by x-ray diffractometry. The optical properties of the films are examined by VASE. Measurements of ellipsometry are performed in the spectral range O. 72-3.55 e V at incident angle 75^o. Several SE models, categorized by physical and optical models, are proposed based on the 'simpler better' rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300℃.  相似文献   

9.
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa (001). Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,  相似文献   

10.
The magnetic property in a material is induced by the unpaired electrons. This can occur due to defect states which can enhance the magnetic moment and the spin polarization. In this report, CdS and CdTe thin films are grown on FTO glass substrates by chemical bath deposition and close-spaced sublimation, respectively. The magnetic properties, which are introduced from oxygen states, are found in CdS and CdTe thin films. From the hysteresis loop of magnetic moment it is revealed that CdS and CdTe thin films have different kinds of magnetic moments at different temperatures. The M–H curves indicate that from 100 K to 350 K, CdS and CdTe thin films show paramagnetism and diamagnetism, respectively.A superparamagnetic or a weakly ferromagnetic response is found at 5 K. It is also observed from ZFC/FC curves that magnetic moments decrease with temperature increasing. Spin polarized density functional calculation for spin magnetic moment is also carried out.  相似文献   

11.
Thin films of the novel superconductor MgB2 were deposited from an Mg-enriched MgB2 target or by alternating ablation from Mg and B targets, depositing multilayers. The superconducting films were achieved in situ by a two-step process: deposition at low temperatures ranging from room temperature to 200 °C and subsequently heating to 600 °C. The color of the plasma originating from Mg or Mg-enriched MgB2 targets during the deposition is an indicator of the constituents of the plasma and can be used to adjust the plasma parameters like pressure and energy density. The films showed a reduced critical temperature (Tc) compared to the bulk value (39 K), which is attributed to the small grain sizes and the relatively high base pressure of the system (10-7 mbar) causing impurities (oxygen, carbon...). To investigate B oxidation and to determine the suitable deposition conditions for B, films made by pulsed-laser deposition (PLD) from B target were analyzed by XPS. The films are very sensitive to the ambient gas purity and the base pressure. We anticipate an improvement of Tc and the crystallinity of MgB2 thin films by using PLD in high vacuum and with a high purity Ar and H2 gas mixture. PACS 74.70.Ad  相似文献   

12.
MgB2 coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB2 CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (Tc) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB2 are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB2 and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB2 grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB2 CCs. The critical current density (Jc) of Jc(5 K, 0 T) ~107 A/cm2 and Jc(5 K, 2.5 T) ~105 A/cm2 has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced Jc (H) behavior can be understood on the basis of the variation in the microstructure of MgB2 CCs with growth temperature.  相似文献   

13.
《Current Applied Physics》2018,18(6):762-766
We report a facile method to enhance the critical current density (Jc) of superconducting MgB2 thin films. MgB2 thin films were deposited on zinc acetate dehydrate (Zn(CH3COO)22H2O) spin-coated Al2O3 (000l) substrates by using a hybrid physical-chemical vapor deposition system at low temperatures. Synthesis of MgB2 at low temperatures can reduce the substitution of Zn into the Mg site, hence avoiding the reduction of superconducting critical temperature. MgB2 thin films grown on ZnO-buffered layers showed a significant enhancement of Jc in the magnetic field due to the creation of additional pinning sources, namely point defects and grain boundaries. Broad peaks were observed in the magnetic field dependence of the flux pinning force density, indicating competition of different pinning sources.  相似文献   

14.
多层膜外退火方法制备MgB2超导薄膜   总被引:1,自引:0,他引:1       下载免费PDF全文
报道了利用电子束蒸发的Mg/B多层膜作为前驱体,然后退火制备MgB2薄膜的工作. 实验中发现,采用翻转膜面的退火处理方式可以有效地避免降温过程中Mg蒸气在薄膜表面形成的颗粒凝结,由此稳定地实现了面积为10 mm×10 mm,均匀、平整的超导薄膜的制备,Tc达35 K,转变宽度为0.8 K,在5 μm×5 μm的区域内薄膜的平均粗糙度小于10 nm. 为了便于后续器件制作过程中的微加工工艺,研究了膜厚小于1000 ?时薄膜的成相规律,发现当样品厚度减薄后,Tc会有明显降低. 通过调整前驱薄膜中的不同分层厚度,仍可实现转变温度达30 K以上、厚度约600 ?的MgB2薄膜,在20 K时的临界电流密度为2.4×106 A/cm2.  相似文献   

15.
Magnesium diboride (MgB2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB2 heterostructures using rather simple physical vapor deposition method such as sputtering.  相似文献   

16.
We investigated the influence of surface damage on the critical current density (Jc) of MgB2 thin films via 140-keV Co-ion irradiation. The Jc(H) of the surface-damaged MgB2 films was remarkably improved in comparison with that of pristine films. The strong enhancement of Jc(H) caused by a surface damage in MgB2 films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (Hirr) at 5 K for surface-damaged MgB2 films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve Jc(H) in a MgB2 superconductor.  相似文献   

17.
Superconducting MgB2 films were obtained by in-situ annealing of precursor multilayers deposited at low substrate temperature by sputtering from a MgB2 stoichiometric target and by thermal evaporation of pure Mg. After an in-situ annealing at 500–600 °C, the films showed a zero resistance critical temperature up to 31 K. The as-obtained MgB2 films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray auger electron spectroscopy (XAES). The electronic structure was studied by monitoring the B 1s, Mg 2p, O 1s core-levels and the Mg KL2L3 Auger line. For comparison, the electronic structure of an MgB2 commercial superconducting sputtering target, of a not-annealed precursor film and of a sample obtained by direct sputtering from the MgB2 target have also been investigated. Electron spectroscopy showed that in the superconducting systems the Mg KL2L3 Auger line kinetic energy position is always higher by about 0.9 eV with respect to the energy position of the same Auger line measured in the non-superconducting samples. PACS 74.25Jb; 74.78.Bz; 74.70.Ad  相似文献   

18.
《Current Applied Physics》2014,14(3):245-250
Superconducting MgB2 thin films with different thicknesses were fabricated by excess Mg using sequential electron beam evaporation technique. The flux rate of Mg and B were chosen as 3 nm/sn and 0.5 nm/sn respectively. The thickness of Mg/B layer was determined as 3/1 which causes an excess Mg for MgB2 formation. After two-step preparation process, the superconducting transition temperatures were found in the range of 32–37 K with a sharp transition to zero resistance state. The irreversibility fields, upper critical fields and activation energies were derived from magneto resistivity curves. The transport critical current densities of films were determined from IV characteristics under different applied fields and the data was extrapolated for determination of value of the 0 K.  相似文献   

19.
The MgB2 coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB2/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (Tc) ranging between 36 and 38 K with superconducting transition width (ΔTc) of about 0.3-0.6 K. The highest critical current density (Jc) of 1.34 × 105 A/cm2 at 5 K under 3 T is obtained for the MgB2/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB2 tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB2/Cu tapes, the MgB2 on SiC-coated Cu tapes exhibited opposite trend in the dependence of Jc with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB2 grain boundaries lead to strong improvement in Jc for the MgB2/SiC/Cu tapes. The MgB2/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher Jc values over the wide field range for MgB2/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The Jc values of Jc(20 K, 0 T) ∼5.8 × 106 A/cm2 and Jc(20 K, 1.5 T) ∼2.4 × 105 A/cm2 is obtained for the 2-μm-thick MgB2/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB2 conductors with high Tc and Jc values which are useful for large scale applications.  相似文献   

20.
We have investigated the flux pinning effect of columnar grain boundary in columnar-structured and single crystalline MgB2 films. The MgB2 films with columnar structure showed much higher Jc than that of single crystalline thin film, and sample having smaller grain size had a higher Jc in high magnetic fields. At 5 K, the MgB2 film with grain size of 460 nm showed an abnormal double-peak behavior in pining force density, Fp(B), caused by competition of different types of pinning sites, such as planar defects and point defects. Field dependences of Fp in columnar-structured films suggest that the columnar grain boundary is a strong pinning source in the MgB2 film and it plays a crucial role in enhancing Jc over a wide range of magnetic fields and temperatures.  相似文献   

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