Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1 − xN quantum dots

The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron–phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/Al_xGa_1 − xN onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron–phonon interactions in GaN/Al_xGa_1 − xN onion-like quantum dots. The frequencies of interface optical phonons and electron–phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range.     

Dual color emitting Eu doped strontium orthosilicate phosphors synthesized by bio-template assisted ultrasound for solid state lightning and display applications

A novel Sr₂SiO₄:Eu (1–5 mol %) superstructures (SS) were synthesized using bio-sacrificial A.V. gel assisted ultrasound method. Powder X-ray diffraction patterns confirmed the presence of both α and β phase formation. It was evident that the morphological growth was highly reliant on A.V. gel concentration, sonication time, pH and sonication power. The formation mechanisms for different hierarchical SS were proposed. From diffuse reflectance spectra, the energy band gap was estimated and found to be ∼4.70–5.11 eV. The photoluminescence emission spectra for the excitation at 392 nm, shows characteristic emission peaks at 593, 613, 654 and 702 nm which were attributed to ⁵D₀ → ⁷F₀, ⁷F_1, ⁷F₂ and ⁷F₃ transitions of Eu³⁺ ions respectively. Conversely, when the samples were subjected to the heat treatment at 850 °C for 3 h under argon atmosphere, display an intense broad emission peak with two de-convoluted peaks at 490 and 550 nm due to 4f⁶5d¹→4f¹ (⁸S_7/2) transitions of Eu²⁺ ions. The concentration quenching phenomenon was discussed which attributes to energy transfer, electron–phonon coupling and ion–ion interaction. The Judd–Ofelt intensity parameters and other radiative properties were estimated by using emission spectra. The CIE chromaticity coordinate values of Sr₂SiO₄:Eu²⁺ and Eu³⁺ nanophosphors were located in green and red regions respectively. The calculated CCT and CRI values specify that the present phosphor can be fairly useful for both green and red components of white LED’s. Luminescence decay and quantum yield suggest the suitability of this phosphor as an efficient luminescent medium for light emitting diodes. Overall, the results elucidated a rapid, environmentally benign, cost-effective and convenient method for Sr₂SiO₄:Eu³⁺ synthesis and for the possible applications such as solid state lighting and display devices.     

Synthesis and photoluminescence of core–shell structured spherical SiO2@YPO4:Tb3+ phosphors via sol–gel process

Monodispersed SiO₂@YPO₄:Tb³⁺ core–shell submicrospheres were prepared through a simply homogeneous sol–gel method. The resulted SiO₂@YPO₄:Tb³⁺ core–shell particles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence spectra (PL) and kinetic decays. The XRD results demonstrate that the YPO₄:Tb³⁺ layers begin to crystallize on the SiO₂ spheres after annealing at 500 °C and the crystallinity increases with raising the annealing temperature. The FTIR spectra show that the YPO₄:Tb³⁺ shell has linked to the silica surface through forming a Si–O–Y bond. SEM and TEM analysis indicate that SiO₂@YPO₄:Tb³⁺ core–shell submicrospheres have the regular microstructures and uniform size distributions. The emission spectra of the obtained submicrospheres are dominated by ⁵D₄–⁷F₅ transition of Tb³⁺ (545 nm, green), and the emission intensities of Tb³⁺ increase with increasing the annealing temperatures and the number of coating cycles. The optimum concentration for Tb³⁺ was determined to be 5 mol % of Y³⁺ in YPO₄ host.     

White-light emission from annealed ZnO:Si nanocomposite thin films

As grown ZnO:Si nanocomposites of different compositional ratios were fabricated by thermal evaporation techniques. These films were subjected to post-deposition annealing under high vacuum at a temperature of 250 °C for 90 min. The photoluminescence (PL) spectra of annealed samples have shown marked improvements both in terms of intensity and broadening. Structural and Raman analyses show formation of a Zn–Si–O shell around ZnO nanoclusters wherein on heating Zn₂SiO₄ compound forms resulting in huge UV, orange and red peaks at 310, 570 and 640 nm in PL. The new emissions due to Zn₂SiO₄ completes white light spectrum. The study not only suggests that 1:2 ratio is the best suited for material manipulation but also shows process at the interface of ZnO nanoclusters and silicon matrix leads to new PL emissions.     

Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide

Nd-doped Si-rich silicon oxide thin films were produced by radio frequency magnetron co-sputtering of three confocal cathodes: Si, SiO₂, and Nd₂O₃, in pure argon plasma at 500 °C. The microstructure and optical properties of the films were investigated versus silicon excess and post-deposition annealing treatment by means of ellipsometry and Fourier transform infrared spectrometry as well as by the photoluminescence method. A notable emission from Nd³⁺ ions was obtained for the as-deposited sample, while the films annealed at 900 °C showed the highest peak intensity. The maximum emission was observed for the films with 4.7 at% of Si excess.     

Novel EGCG assisted ultrasound synthesis of self-assembled Ca2SiO4:Eu3+ hierarchical superstructures: Photometric characteristics and LED applications

This paper reports for the first time ultrasound, EGCG assisted synthesis of pure and Eu³⁺ (1–5 mol%) activated Ca₂SiO₄ nanophosphors having self-assembled superstructures with high purity. The shape, size and morphology of the product were tuned by controlling influential parameters. It was found that morphology was highly dependent on EGCG concentration, sonication time, pH and sonication power. The probable formation mechanism for various hierarchical superstructures was proposed. The PL studies of Ca₂SiO₄:Eu³⁺ phosphors can be effectively excited by the near ultraviolet (UV) (396 nm) light and exhibited strong red emission around 613 nm, which was attributed to the Eu³⁺ (⁵D₀ → ⁷F₂) transition. The concentration quenching phenomenon was explained based on energy transfer between defect and Eu³⁺ ions, electron–phonon coupling and Eu³⁺–Eu³⁺ interaction. The Judd–Ofelt intensity parameters and radiative properties were estimated by using PL emission spectra. The photometric studies indicate that the obtained phosphors could be a promising red component for possible applications in the field of white light emitting diodes.     

Bi-assisted chemical etching of silicon in HF/Co(NO3)2 solution

The morphology and the photoluminescence (PL) of Bi-assisted electroless etched p-type silicon in HF–Co(NO₃)₂–H₂O solution as a function of etching time were studied. The scanning electron microscopy (SEM) observations have shown that the morphology of etched layers strongly depends on the etching time and it was observed that macropores filled with silicon crystallites are formed for etching time higher than 50 min. Moreover, it was found that the PL spectra show a red emission with a peak centred at 640 nm. The PL peak intensity reaches a maximum for etching time of 50 min, and then it decreases with increasing etching time. The Fourier transform infrared (FTIR) measurements have shown a strong increase in intensities of the relevant Si–H and in the amount of oxide (absorption band at 1070 cm^?1) for long etching time which was ascribed to an increase in the number of Si crystallites formed in the macropores.     

Optical properties of amorphous Si/SiO2superlattice

Amorphous Si/SiO₂(a-Si/SiO₂) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ⁽³⁾of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO₂superlattice using the Z -scan technique. The real and imaginary parts of χ⁽³⁾have been found to be 1.316  ×  10 ^− 7eus and  − 5.596  ×  10 ^− 7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.     

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X_C of ～82% and are surrounded by a thin layer of SiO_x. The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X_C to ～65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ～1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text.     

Tailoring electron–phonon interaction in nanostructures

Efficient design of optoelectronic devices based on electron intersubband transitions depends critically on the knowledge of the intersubband relaxation times which in turn, depends on electron scattering with LO and acoustic phonons. In this article the intersubband scattering time associated with electron–acoustic-phonon interaction has been discussed in terms of phonon mode quantization and phonon confinement with describing the acoustic phonon dispersion relation in detail by introducing the cut-off frequency for each mode. It has been shown that the quantization of acoustic phonon modes lead to an enhancement in electron–phonon scattering time in AlGaAs quantum well structures. Based on the presented model, a new tailoring method has presented to adjust the electron–phonon scattering time in intersubband-transition-based structures while keeping the electronic properties unaltered. Also, we illustrated that for a quantum well with subband energy separation of ∼30 meV, the intersubband scattering time with acoustic-phonon-assisted transitions could be tailored from ∼120 ps to increased value of ∼400 ps or reduced value of ∼45 ps by inserting a 1 nm-thickacoustically soft or hard layers, respectively, while keeping the same the initial energy separation.     

Near-infrared broadband luminescence and energy transfer in Bi–Tm–Er co-doped lanthanum aluminosilicate glasses

The Bi–Tm–Er co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission, were investigated by the optical absorption and photoluminescence spectra. A super broadband NIR emission extending from 0.95 to 1.6 μm with a full-width at half-maximum (FWHM) of 430 nm which covered the whole O, E, S, C and L bands, was observed in Bi–Tm–Er co-doped samples under 808 nm excitation, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1450 nm) as well as Er^{3+ 4}I_13/2→⁴I_15/2 transition (1545 nm). In addition, a super broadband emission with amplitude relatively flat from 0.95 to 2.1 μm has been observed. The possible energy transfer between Bi-related centers, Tm³⁺ ions and Er³⁺ ions was proposed.     

Search for an effect of superconductivity on the phonons in Ba(Fe1−xCox)2As2

Inelastic neutron scattering was used to search for an influence of superconductivity on the phonons in optimally doped and in slightly overdoped Ba(Fe_1?xCo_x)₂As₂, x = 0.06 and x = 0.10. The study focused on phonons with energies close to the superconducting gap energy 2Δ because it is well known that such phonons will respond most strongly to the opening of the gap. We were able to obtain high quality data but nevertheless, we could not detect any influence of superconductivity on the phonons, neither on the linewidths nor on the frequencies. Our results imply that any coupling of low energy phonons to the electrons has to be very small, much smaller than observed in conventional superconductors with a high T_c. Our results are in line with the low coupling strength predicted by density functional theory for the investigated phonon branches.     

Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

We report in detail on the dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/SiO₂ superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. This unique approach allows preparation of well-defined Si nanocrystals. Experimental techniques of time-resolved absorption and photoluminescence were used to monitor the carrier dynamics on a wide time scale from picoseconds to milliseconds for a set of samples with different parameters (nanocrystal size, hydrogen annealing). The initial fast decay (tens of picoseconds) dependent on pump intensity for excitation levels exceeding one electron–hole pair per nanocrystal can be interpreted in terms of the bimolecular recombination with constant B=(2–3)×10⁻¹⁰ cm³ s⁻¹. The slow pump intensity independent decay (microseconds) can be reproduced well by a stretched-exponential function. The dependence of stretched-exponential parameters on photoluminescence photon energy and sample properties agrees well with the picture of trapped carriers.     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

Structure dependent luminescence characterization of green–yellow emitting Sr2SiO4:Eu2+ phosphors for near UV LEDs

This paper reports on the luminescence properties of mixtures of α- and β-(Sr_0.97Eu_0.03)₂SiO₄ phosphors. These phosphors were prepared by 3 different synthesis techniques: a modified sol–gel/Pechini method, a co-precipitation method and a combustion method. The structural and optical properties of these phosphors were compared to those of solid state synthesized powders. The emission spectra consist of a weak broad blue band centered near 460 nm and a strong broad green–yellow band centered between 543 and 573 nm depending on the crystal structure. The green–yellow emission peak blue-shifts as the amount of β phase increases and the photoluminescence emission intensity and quantum efficiency of the mixed phase powders is greater than those of predominant α-phase powders when excited between 370 and 410 nm. Thus, (Sr_1?xEu_x)₂SiO₄ with larger proportion of the β phase are more promising candidates than single α-phase powders for use as a green–yellow emitting phosphor for near UV LED applications. Finally the phosphors prepared by the sol–gel/Pechini method, which have larger amount of β phase, have a higher emission intensity and quantum efficiency than those prepared by co-precipitation or combustion synthesis.     

Structural evolution,growth mechanism and photoluminescence properties of CuWO4 nanocrystals

Copper tungstate (CuWO₄) crystals were synthesized by the sonochemistry (SC) method, and then, heat treated in a conventional furnace at different temperatures for 1 h. The structural evolution, growth mechanism and photoluminescence (PL) properties of these crystals were thoroughly investigated. X-ray diffraction patterns, micro-Raman spectra and Fourier transformed infrared spectra indicated that crystals heat treated and 100 °C and 200 °C have water molecules in their lattice (copper tungstate dihydrate (CuWO₄·2H₂O) with monoclinic structure), when the crystals are calcinated at 300 °C have the presence of two phase (CuWO₄·2H₂O and CuWO₄), while the others heat treated at 400 °C and 500 °C have a single CuWO₄ triclinic structure. Field emission scanning electron microscopy revealed a change in the morphological features of these crystals with the increase of the heat treatment temperature. Transmission electron microscopy (TEM), high resolution-TEM images and selected area electron diffraction were employed to examine the shape, size and structure of these crystals. Ultraviolet–Visible spectra evidenced a decrease of band gap values with the increase of the temperature, which were correlated with the reduction of intermediary energy levels within the band gap. The intense photoluminescence (PL) emission was detected for the sample heat treat at 300 °C for 1 h, which have a mixture of CuWO₄·2H₂O and CuWO₄ phases. Therefore, there is a synergic effect between the intermediary energy levels arising from these two phases during the electronic transitions responsible for PL emissions.     

Infrared broadband emission of bismuth–thulium co-doped lanthanum–aluminum–silica glasses

The Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission was investigated by the optical absorption and photoluminescence spectra. The super broadband near-infrared emission from 1000 to 2100 nm, which covered the whole O, E, S, C and L bands, was observed in the Bi–Tm co-doped samples, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1440 nm) as well as Tm^{3+ 3}F₄→³H₆ transition (1800 nm). Relative luminescence intensity at 1270, 1440 and 1800 nm wavelength varied depending on the mixing ratio of Bi and Tm and the full-width at half-maximum (FWHM) extending from 1000 to 1600 nm could be 400 nm. These results indicated that Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ glasses could provide potential applications in tunable lasers as well as the broadband optical amplifiers in WDM system.     

Characterization of luminescent chromophore obtained from silica spheres

Blue light emitting chromophores have been separated from silica spheres by soaking them into acetone for 120 days. The luminescent chromophores were not obtained from other solvents, including ether, methanol, ethanol, 2-propanol, chloroform and tetrahydrofuran. According to the Fourier transform infrared spectrum, the luminescent material is composed of C–OH, –CH₂, –CH₃, C=O, and Si–O–Si. UV–visible absorption peak of the chromophore is at 5.17 eV (240 nm). Field emission scanning electron microscope images show small cracks on the surface of aged spheres. The luminescence peak was at 2.81 eV (441 nm) for excitation energy between 3.88 and 3.35 eV and slightly shifted toward lower energy for excitation energy lower than 3.35 eV. The deconvoluted luminescent spectrum shows two emission bands at 3.08 and 2.74 eV, which are well-matched the oxygen deficient center model. Compared to the absorption peak (5.17 eV) and the emission peak (2.81 eV), large Stokes shift (2.36 eV) is observed.     

Optical and Raman spectroscopy studies on Fe-based superconductors

A brief review of optical and Raman studies on the Fe-based superconductors is given, with special emphasis on the competing phenomenon in this system. Optical investigations on ReFeAsO (Re = rare-earth element) and AFe₂As₂ (A = alkaline-earth metal) families provide clear evidence for the gap formation in the broken symmetry states, including the partial gaps in the spin-density wave states of parent compounds, and the pairing gaps in the superconducting states for doped compounds. Especially, the superconducting gap has an s-wave pairing lineshape in hole-doped BaFe₂As₂. Optical phonons at zone center detected by Raman and infrared techniques are classified for several Fe-based compounds. Related issues, such as the electron–phonon coupling and the effect of spin-density wave and superconducting transitions on phonons, are also discussed. Meanwhile, open questions including the T-dependent mid-infrared peak at 0.6–0.7 eV, electronic correlation, and the similarities/differences between high-T_c cuprates and Fe-based superconductors are also briefly discussed. Important results from other experimental probes are compared with optical data to better understand the spin-density wave properties, the superconductivity, and the multi-band character in Fe-based compounds.     

Sol–gel synthesis and luminescent properties of SiO2/Zn2SiO4 and SiO2/Zn2SiO4:V composite materials

Undoped and vanadium-doped Zn₂SiO₄ particles embedded in silica host matrix were prepared by a simple solid-phase reaction after the incorporation of ZnO and ZnO:V nanoparticles, respectively, in silica monolith using the sol–gel method with supercritical drying of ethyl alcohol in two steps. After supercritical drying and annealing in the temperature range between 1423 and 1473 K in an air atmosphere, the photoluminescence (PL) measurements show a band centered at about 760 nm in the case of non-doped Zn₂SiO₄ which is attributed to energy transfer from Zn₂SiO₄ particles to NBOHs interface defects. In the case of vanadium doped Zn₂SiO₄, the PL reveals a band centered at about 540 nm attributed to the vanadium in the interfaces between Zn₂SiO₄ particles and SiO₂ host matrix. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. The PLE band (～240–350 nm) may be understood as an energy transfer process from O^2? to V⁵⁺ which occurs intrinsically in the vanadyl group.