小角X射线散射法测定溶胶平均界面厚度

溶胶界面层厚度通常是用Porod法对高角区负偏离的Porod曲线进行拟合求算,但本文研究表明还可通过分别测定Porod负偏离校正前后体系粒子的平均半径之差而获得平均界面厚度.应用上述方法测定了在不同制备条件下制备的二氧化硅溶胶的平均界面厚度 关键词： 小角X射线散射 溶胶 平均界面厚度     

小角x射线散射法研究氧化硅溶胶的制备环境依赖性

根据氧化硅溶胶的不同制备环境(如老化时间、酸碱性和溶剂种类等)，利用小角x射线散射( SAXS)技术，辅以动态光散射等方法，对氧化硅溶胶的界面性质和微结构进行比较性分析.发 现在碱或酸催化下氧化硅溶胶的SAXS结果表现出极大差异，用低分子有机酸作催化剂不仅可 以得到聚硅氧烷大分子，而且有机酸和正硅酸乙酯的酸解反应使溶胶形成内部结构很复杂的 颗粒悬浮体系.溶剂极性越大，则颗粒形貌越不规则.甲酸酸解得到的溶胶颗粒的硅氧四面体 形成程度是所有体系中最差的.发现了在水为溶剂时溶胶SAXS结果中不同寻常的正、负偏离 共存情况，并给出了相应的解释. 关键词： 小角x射线散射 氧化硅 溶胶_凝胶     

利用小角X射线散射技术研究组分对聚酰亚胺/Al2O3杂化薄膜界面特性与分形特征的影响

采用溶胶-凝胶方法制备无机纳米杂化聚酰亚胺(PI),应用同步辐射小角X射线散射(SAXS)方法研究不同组分杂化PI薄膜的界面特性与分形特征.研究结果表明:散射曲线不遵守Porod定理,形成负偏离,说明薄膜中有机相与Al₂O₃纳米颗粒间存在界面层,界面层厚度在0.54 nm到1.48 nm范围内;随无机纳米组分增加,界面层厚度增加,有机相与无机相作用变强;无机纳米颗粒同时具有质量分形和表面分形特征,其分布、集结是一种非线性动力学过程;随组分增加,其质量分形维数降低 关键词： 小角X射线散射 纳米杂化 聚酰亚胺 界面     

激光熔覆中球形粒子对激光散射强度的研究

为了研究同轴激光熔覆过程中球形粉末粒子和激光的相互作用,为激光熔覆中激光器和粒子的选择提供一定的理论依据,在进行了一定假设的前提下,应用米氏(Mie)散射理论建立了激光被球形粉末粒子散射的物理模型,应用Mathematica数学软件绘制出了在不同粒子半径和不同激光波长情况下,激光被球形粉末粒子散射后的强度分布图,并对模拟结果进行了分析.研究结果显示:金属粉末粒子的半径和激光的波长是影响激光散射强度分布的重要因素.结果表明:当光学常数q≤30的时候,散射光强在偏离传播方向20.以外还有一个次极大值,且次极大值占总散射光强比例较大,不利于熔池的形成;当光学常数q≥30的时候,散射后的光强主要集中在偏离传播方向5.～6.的小范围内,且在此范围内的散射强度很高,有利于提高激光熔覆效率.     

溶胶-凝胶TiO2和SiO2光学膜的结构

本文研究了TiO₂和SiO₂溶胶-凝胶光学膜在低温热处理下的组分、形貌特征、光散射特性.AES分析结果表明,在TiO₂膜和SiO₂膜的交界面处,Ti和Si相互扩散,从而证实了在多层膜中,膜层之间、膜层和基底之间有Ti-O-Si(或Si-O-Ti,或Si-O-Si)化学键形成.AES和ESCA分析结果显示溶胶-凝胶膜经过低温处理后C的含量较高,这归结为溶胶—凝胶膜的工艺特点.AFM测试结果显示,溶胶—凝胶TiO₂光学膜的表面形貌具有显著的柱状结构,薄膜表面起伏大约是7.5nm.TiO₂,SiO₂单层膜的表面散射率随着热处理温度的提高而变大,对于不同陈化时间的溶液镀制的膜有不同的表面散率.     

银溶胶的合成、表征及其表面增强拉曼散射特性研究

报道了一种简单的合成均匀、稳定的银溶胶的方法,通过透射电子显微镜(TEM)观察其形貌,并利用UV-Vis谱、XPS等手段对其进行表征,以罗丹明6G(R6G)作为探针分子研究在银溶胶纳米粒子上的表面增强拉曼效果,结果表明所合成的银溶胶具有较强的表面增强拉曼散射效果。     

纳米银/丝素复合材料的制备及其光谱性质研究

开发可靠、生态友好的纳米材料合成方法是当今纳米技术发展的一个重要方面,基于天然生物材料如丝素蛋白原位合成来制备纳米贵金属溶胶是一种具有极大发展潜力的方法之一.文章在室温下以丝素原位还原硝酸银制得了纳米银/丝素复合溶胶,通过紫外一可见光谱、原子力显微镜、荧光光谱和共振光散射对其制备过程和光谱性质进行了表征.实验表明丝素链中的酪氨酸残基对AgNO3还原生成纳米银颗粒起了主要作用,制得的纳米银粒子均匀地包埋在丝素胶体中,具有很好的分散性和稳定性,可长期保存.丝素蛋白与纳米银复合后,荧光强度明显增加,证明了丝素蛋白与纳米银表面之间形成了较强的化学吸附,在银表面形成了一个相对稳定的络合物致密层.同时利用共振散射光谱分析实验进一步证实了纳米银粒子的形成.     

银纳米粒子对组装阵列中耦联分子拉曼散射的影响

分别用硼氢化钠和氢气还原法制备了两种不同的银溶胶(I和II),并采用自组装技术将银纳米粒子组装到对巯基苯胺(PATP)修饰的光滑银基底表面,形成银纳米粒子亚单层二维阵列。比较两种阵列中PATP的表面增强拉曼光谱发现,溶胶II所得阵列中的PATP的b2振动得到了较大的增强,即存在较大程度的电荷转移,说明银纳米粒子的性质直接影响了耦联分子的光谱特征。对溶胶Ⅰ进行离心处理,组装,得到的拉曼特征与阵列II类似。就溶胶II的银纳米粒子而言,组装结构中可能形成Ag-N化学键,从而导致更强的氨基与银粒子的相互作用。     

分层均匀粒子散射特性的异常衍射近似方法

自然环境中存在大量各种各样的悬浮颗粒,有关粒子散射特性的研究具有广泛的应用价值。现有的理论计算较为复杂,且研究对象多为均匀球体模型,忽略了粒子内部组成结构的差异。通过分析双层均匀球体模型消光效率和吸收效率的计算过程,将异常衍射近似方法扩展到多层均匀粒子,并给出相应的误差比较,说明该方法的实用性。以海洋浮游微生物为例,着重讨论了双层均匀粒子具有不同内外球体参数以及内球和外球中心偏离情况的散射特性。仿真结果表明除了尺寸、折射率等参数,粒子的不均匀结构对前向散射也有作用,当内外球体参数相差较大时,有必要考虑结构因素对散射特性的影响。     

Al-Li合金时效-回归-再时效析出δ′相的行为

应用小角X射线散射技术研究二元Al-Li(Li的质量分数为2.70%)合金时效-回归-再时效析出δ′相的行为.发现再时效8h析出的δ′相与基体之间存在明显的过渡界面层,再时效16h以后过渡界面层消失.表明δ′相粒子的长大首先是吞噬过渡界面层长大,然后是互相吞并长大. 关键词： Al-Li合金 时效－回归－再时效 过渡界面层     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.